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IGW25N120H3FKSA1
IGBT, 50 A, 2.05 V, 326 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.05V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 326W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.05V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.69 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## IGBT
IGW25N120H3
IGW25N120H3
**Features:** TRENCHSTOP[TM] * best in class switching losses * very low V CEsat
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C<br>G<br>E<br>**----- End of picture text -----**<br>
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http://www.infineon.com/igbt/<br>Applications:<br>* solar inverters<br>* uninterruptible power supplies<br>* welding converters<br>* converters with high switching frequency<br>1<br>2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGW25N120H3|1200V|25A|2.05V|175°C|G25H1203|PG-TO247-3|
2
IGW25N120H3
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## High�speed�switching�series�third�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev.�2.1,��2014-02-27
IGW25N120H3
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## High�speed�switching�series�third�generation
## **Maximum�ratings**
|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emitter voltage|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||50.0<br>25.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||100.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||100.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||326.0<br>156.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.46|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=25.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|2.05<br>2.50<br>2.70|2.40<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.85mA,_V_CE=_V_GE|5.0|5.8|6.5|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|250.0<br>2500.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|600|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=25.0A|-|13.0|-|S|
Rev.�2.1,��2014-02-27
4
IGW25N120H3
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## High�speed�switching�series�third�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1430|-|pF|
|Output capacitance|_C_oes||-|95|-||
|Reverse transfer capacitance|_C_res||-|75|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=25.0A,<br>_V_GE=15V|-|115.0|-|nC|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤600V,<br>_t_SC≤10µs<br>_T_vj=175°C|-|87|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=23.0Ω,_L_σ=80nH,<br>_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKW25N120H3) reverse<br>recovery.|-|27|-|ns|
|Rise time|_t_r||-|41|-|ns|
|Turn-off delaytime|_t_d(off)||-|277|-|ns|
|Fall time|_t_f||-|17|-|ns|
|Turn-on energy|_E_on||-|1.80|-|mJ|
|Turn-off energy|_E_off||-|0.85|-|mJ|
|Total switchingenergy|_E_ts||-|2.65|-|mJ|
||||||||
|Turn-on energy|_E_on|_T_vj=25°C,<br>_V_CC=800V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=3.0Ω,_L_σ=80nH,<br>_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IDH15S120) reverse<br>recovery.|-|0.08|-|mJ|
|Turn-off energy|_E_off||-|0.27|-|mJ|
|Total switching energy|_E_ts||-|0.35|-|mJ|
Rev.�2.1,��2014-02-27
5
IGW25N120H3
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## High�speed�switching�series�third�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=23.0Ω,_L_σ=80nH,<br>_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKW25N120H3) reverse<br>recovery.|-|26|-|ns|
|Rise time|_t_r||-|35|-|ns|
|Turn-off delaytime|_t_d(off)||-|347|-|ns|
|Fall time|_t_f||-|50|-|ns|
|Turn-on energy|_E_on||-|2.60|-|mJ|
|Turn-off energy|_E_off||-|1.70|-|mJ|
|Total switchingenergy|_E_ts||-|4.30|-|mJ|
||||||||
|Turn-on energy|_E_on|_T_vj=175°C,<br>_V_CC=800V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=3.0Ω,_L_σ=80nH,<br>_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IDH15S120) reverse<br>recovery.|-|0.10|-|mJ|
|Turn-off energy|_E_off||-|0.62|-|mJ|
|Total switching energy|_E_ts||-|0.72|-|mJ|
6
Rev.�2.1,��2014-02-27
IGW25N120H3
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110<br>100 AI \ Le CA 100 LI ee See ees ee r<br>Nt IT ETT<br>90<br>CUNTi ll SERBS SSSR<br>2 80 N UN tp=1µs<br>| A ieoolll 2 iRet<br>Zz 70 CNG WITT eee 10µs cre<br>10<br>x \ | ee 50µs<br>phd2O 60 >NUN \ \ 2x2 ——PEeT. aies<br>100µs<br>x \ \ Y yA O Pere A WE<br>O 50 x ‘ NaN x = 200µs eS<br>e 40 COUINNCANT\ Nr Soiy O_ LT 500µs<br>_ TT) 6 oo ee<br>1 DC<br>:© 30 TC=80° TUSTINSN iN \TTT aLeMs<br>TC=110°<br>20 T tHAN| TI | ES<br>TC=80°<br>10 | COEAN. \ \N |||] erPt TT TEa<br>TC=110° IENa A<br>SSS<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =600V, V GE=15/0V,<br>r G=23 Ω )<br>350 50<br>300<br>40<br>250<br>= oe<br>30<br>x 200 \ a<br>2) oc<br>Oo fe)<br>150<br>i ‘ : 20<br>= am<br>Pio<br>100<br>N |<br>10<br>SooeeNee<br>50<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ j ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C)
7
~~High speed switching series third generation~~ IGW25N120H3
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10090 P V ET GE=20V TT TTT CCP TTT TELE ALE 100 P| VGE=20V | BP | 7 iva<br>80 PeePTET 17V AAA 80 17V TET| J/f/yyy | |<br>15V 15V<br>—ee 70 LbOe eetreee8 L/S— Lf | 4<br>13V 13V<br>B~e 60 LTIIA 11V TAA TbeT) og 60 11V Sya4nemI LY<br>S LONE 9V TP) Ss 9V NP Ae<br>6 50 6LLEL<br>Oo NING 7V 7V NL 7S<br>@ 40 Pe NO EEE EEL Oo 40 INN<br>| FUUSNGPACET 5V | 5V SU<br>30<br>S LNs RES<br>FS | NOE<br>20 20<br>RNY/| | KLI| | tt N | PRA<br>10<br>PEN T |ZENE<br>0 PRACT 0 | FS<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 2 4 6 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
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Figure 5. Typical<br>( T j=25°C)<br>**----- End of picture text -----**<br>
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Figure 6. Typical<br>( T j=175°C)<br>**----- End of picture text -----**<br>
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75 5.0<br>Tj=25°C IC=12.5A<br>Tj=175°C IC=25A<br>ET},ee ee ee 4.5 J & IC=50A )<br>60<br>4.0<br>ze || ify |<br>Se ee 7 3.5 e e<br>a 45 ee<br>BP BB] ee<br>3.0<br>ie 30 ee ee<br>Sf 2.5<br>= 2.0<br>15<br>ee) eee 1.5 pt ——7—7 [|<br>0 p oe | | 1.0<br>w ee] OL<br>5 10 15 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical ( _V_ CE=20V)
Figure 8.
( _V_ GE=15V)
8
IGW25N120H3
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1000 SS 1000 A<br>jp P| | td(off) i eee eee eee | td(off) ee ee<br>tf tf<br>| td(on) 2 ee ee ee | td(on) ee ee<br>A || tr Pf}i | I tr p f}f of| | | er<br>Pe eee [ a]<br>| | | eet | Pf p ep}| eetT tt| dT | |<br>op)Wwei] ittti tyeWwop) feet eee<br>FF<br>g 100 a a g 100 A A<br>= a a A<br>rs) a aee aee<br>Ee a es ee ee aeeeeee eee e e ee<br>= a a ee eee pi | | | | | | ee ee<br>Of | |e| | tleeee| BeeP| | epee TTT|<br>pereyrereyV4 LaerEE<br>7 /<br>/<br>10 10<br>5 15 25 35 45 5 15 25 35 45 55 65<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =175°C, V CE =600V, V GE=15/0V, (ind. load, T j =175°C, V CE =600V, V GE=15/0V,<br>r G=23 , test circuit in Fig. E) I C =25A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
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1000 a 7<br>| | td(off) aesee eee typ.<br>tf<br>e | ttd(on)r PPt (gl ee ||<br>6<br>_ aE p — oQ PS<br>e f aN<br>5<br>=F Ww7) ys “TS,<br>100<br>g OE TSK<br>= po ~S<br>rs) a x 4<br>E a es<br>= po | | PE<br>et}<br>3<br>10 2<br>0 25 50 75 100 125 150 175 0 25 50 75<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION<br>Figure 11. Typical switching times as a function of Figure 12. Gate-emitter threshold<br>junction temperature of junction temperature<br>(ind. load, V CE =600V, V GE =15/0V, I C=25A, ( I C=0.85mA)=0.85mA)<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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typ.<br>min.<br>ee max.<br>||<br>6 PS<br>5<br>ys “TS, TSK NN— se_<br>~S<br>4 IN<br>= ~<br>—_<br>S<br>3<br>2<br>0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>**----- End of picture text -----**<br>
( _I_ C=0.85mA)=0.85mA)
_r_ G=23
9
IGW25N120H3
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12 7<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>6<br>10<br>oy{ t orr oy<br>Ww r aye/ Ww 5 | pf[ope<br>7)ee:oo 8 / 7)<br>i<br>aa) uc<br>aa)ya ee ; 7 > 4 Eence<br>oreee’ , or ead -<br>Ww 6 é Ww -<br>Zz / Zz ue<br>Gof |a 3 a<br>Zz a Zz ude<br>oO 4 ra 7 oO To<br>Per ye 2 pep<br>Se* Paer | Bo e<br>2 lL eT] *<br>Leger] 1<br>0 0<br>eT | tT |tt| | ||<br>5 15 25 35 45 5 15 25 35 45 55 65<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =175°C, V CE =600V, V GE=15/0V, (ind. load, T j =175°C, V CE =600V, V GE=15/0V,<br>r G=23 , test circuit in Fig. E) I C =25A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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6<br>Eoff Eoff<br>Eon Eon<br>4 Ets Ets<br>5<br>7)ep) 3 7)ep) 4 aw<br>—! —! aa<br>> {1 > wee<br>O = O aa<br>Ww Ww 3 > ><br>z z - o<br>Ww 2 i ue<br>s | s 2 aa —<br>oe3 1 ae 3 —-<br>1<br>ee<br>0 0<br>0 25 50 75 100 125 150 175 400 500 600 700 800<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =600V, V GE =15/0V, I C=25A, (ind. load, T j =175°C, V GE =15/0V, I C=25A,<br>r G=23 , test circuit in Fig. E) r G=23 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
10
IGW25N120H3
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2.0 1.2<br>Eoff Eoff<br>1.8 Eon Eon<br>Ets Ets<br>Ft ttt ty fF F t<br>1.0<br>1.6<br>E ST, ae<br>WWef 1.4 e e,” Ww7)oe 0.8 are<br>Enea: 1.2<br>g ALA ys toler] ptt |<br>: OA le rt<br>elie 1.0 0.6 E e<br>Zz Wz Z<br>0.8<br>= ; = -<br>0.4<br>2 A = |i tit | | ted |<br>0.6<br>: | : cet<br>° 0.4 / co<br>E {ide | -<br>0.2<br>0.2<br>JA TLee ee<br>0.0 0.0<br>0 5 10 15 20 25 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 1. Typical switching energy losses as a function Figure 2. Typical switching energy losses as a<br>of collector current of gate resistor<br>(ind. load, T j =125°C, V CE =800V, V GE=15/0V, (ind. load, T j =125°C, V CE =800V, V GE=15/0V,<br>rG =3 Ω , Diode IDH15$120) I C =10A, Diode IDH15S120)<br>E E<br>**----- End of picture text -----**<br>
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0.8 0.8<br>Eoff Eoff<br>Eon Eon<br>Ets 0.7 Ets<br>0.6 a 0.6 L<br>e<br>B e es<br>0.5<br>g<br>ce 0.4 a: zeg 0.4 | aa-<br>WW WW<br>oO oO<br>Zz oa Zz 0.3<br>OO<br>EE<br>== 0.2 0.2<br>0.1<br>0.0 0.0<br>25 50 75 100 125 400 500 600 700 800<br>T j ,JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical switching energy losses as a function Figure 4. Typical switching energy losses as a function<br>of junction temperature of collector emitter voltage<br>(ind load, V CE =800V, V GE =15/0V, I C=10A, (ind. load, T j =125°C, V GE =15/0V, I C=10A,<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
r G=3 Ω<br>**----- End of picture text -----**<br>
r G=3 Ω
10a
~~High speed switching series third generation~~ IGW25N120H3
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11
IGW25N120H3
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IGW25N120H3
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High�speed�switching�series�third�generation
## PG-TO247-3
13
Rev.�2.1,��2014-02-27
IGW25N120H3
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## High�speed�switching�series�third�generation
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14
Rev.�2.1,��2014-02-27
IGW25N120H3
## IGW25N120H3
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2011-12-12|Preliminarydata sheet|
|2.1|2014-02-27|Final data sheet|
## **Information**
## **Warnings**
endangered.
15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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