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IGW100N60H3FKSA1
IGBT, 140 A, 1.85 V, 714 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:140A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:714W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pi
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 714W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 140A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.26 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
# IGW100N60H3
IGW100N60H3
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Features:<br>TRENCHSTOP [TM]<br>¢ very low turn-off<br>low V CEsat<br>**----- End of picture text -----**<br>
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compliant<br>* complete product spectrum<br>http://www.infineon.com/igbt/<br>**----- End of picture text -----**<br>
## **Applications:**
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C<br>G<br>E<br>_*<br>, =<br>7<br>1<br>2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGW100N60H3|600V|100A|1.85V|175°C|G100H603|PG-TO247-pin123|
2
IGW100N60H3
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## High�speed�switching�series�third�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.�1.2,��2013-02-07
IGW100N60H3
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## High�speed�switching�series�third�generation
## **Maximum�ratings**
|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emitter voltage|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax1)<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||140.0<br>120.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax2)|_I_Cpuls||300.0|A|
|Turnoffsafeoperatingarea_V_CE≤600V,_T_vj≤175°C3)|-||300.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C|_P_tot||714.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,4)<br>junction - case|_R_th(j-c)|||0.21|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=100.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.85<br>2.10<br>2.25|2.30<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.60mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>6700.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=100.0A|-|50.0|-|S|
- 1) For maximal distance of 5mm between soldering point and mould
- 2) Additionally tp<10ms due to bondwire
- 3) Additionally tp<10ms due to bondwire
- 4) Thermal resistance of grease Rth(c-s) (case to heat sink) more than 0.1 K/W not included.
Rev.�1.2,��2013-02-07
4
IGW100N60H3
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## High�speed�switching�series�third�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|6100|-|pF|
|Output capacitance|_C_oes||-|210|-||
|Reverse transfer capacitance|_C_res||-|180|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=100.0A,<br>_V_GE=15V|-|625.0|-|nC|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|890|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=100.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=3.5Ω,_L_σ=25nH,<br>_C_σ=50pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IDW50E60) reverse<br>recovery.|-|30|-|ns|
|Rise time|_t_r||-|47|-|ns|
|Turn-off delaytime|_t_d(off)||-|265|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|3.70|-|mJ|
|Turn-off energy|_E_off||-|1.90|-|mJ|
|Total switchingenergy|_E_ts||-|5.60|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=100.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=3.5Ω,_L_σ=25nH,<br>_C_σ=50pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IDW50E60) reverse<br>recovery.|-|28|-|ns|
|Rise time|_t_r||-|44|-|ns|
|Turn-off delaytime|_t_d(off)||-|310|-|ns|
|Fall time|_t_f||-|23|-|ns|
|Turn-on energy|_E_on||-|4.70|-|mJ|
|Turn-off energy|_E_off||-|2.30|-|mJ|
|Total switchingenergy|_E_ts||-|7.00|-|mJ|
Rev.�1.2,��2013-02-07
5
IGW100N60H3
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160 r | | fl ee<br>140<br>100<br>~s ‘<br><x__ 120 ‘, ‘. <x_ poa SS)ESON<br>a 100 _ a ‘ _ _2 toprNIAROA<br>g Zee<br>‘y<br>=)0 SA s B=) 10 L A E VA| YA<br>w 80 a ‘y x 0w poeeYSAny Anan any oyJ AnyYY AoST<br>FEOO oa & . . i \. OE aPHa (Any tp=1µs PSHAy ee<br>60 10µs<br>4 4 4a ~ : 1 9Sf PTLT AALVMYOFTI<br>TC=80°<br>g° - 8° 1 LLPt, 50µs “WAAZ7<br>40 TC=110°<br>100µs<br>2)<br>200µs<br>20 Hg.pT TY SAATYi [Vili] 2 | tee<br>500µs<br>DC<br>0 0.1<br>10 100 1 10 100<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V,<br>( T vj ≤ 175°C, D =0.5, V CE =400V, V GE=15/0V,=15/0V, Rth(j-c)=0.21K/W)<br>I C I C<br>**----- End of picture text -----**<br>
Figure 1. Collector current as a function **frequency** ( _T_ vj ≤ 175°C, _D_ =0.5, _V_ CE =400V, _V_ GE=15/0V,=15/0V, _r_ G=3.5 Ω ,R th(j-c)=0.21K/W)
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715<br>e— 572 LENTPNcpoeet\<br>fo)<br>ee<= RNE\ RRR:<br>429<br>2 .<br>2 TT iLINTt ty<br>e<br>= POOPOPN<br>286<br>Ee<br>LETT\<br>TT ENTE<br>SERRE EERNEE\<br>143<br>SERRE EREENE<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br>
Figure 3.
**temperature** ( _T_ vj ≤ 175°C, R th(j-c)=0.21K/W)
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160<br>140<br>120<br>g L EU<br>i LEE\<br>100 N UTE<br>oc \<br>BN 80<br>gs<br>e<br>60 LE ENE<br>4<br>~<br>40 Fite.<br>20<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>I C<br>**----- End of picture text -----**<br>
Figure 4. Collector current as a function of **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C, R th(j-c)=0.21K/W)
6
## High speed switching series third generation IGW100N60H3
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300 300.0<br>VGE=20V VGE=20V<br>pow 17V WA) pol 17V Pe<br>250 GRe\Geeeee 15V ee 250.0 15V Voi|<br>13V 13V<br>~ tI NL NG<br>e 200 11V 200.0 11V 7<br>LINN Z| Wi YZ<br>9V 9V<br>STA eae<br>7V 7V<br>© 150 150.0 Ze<br>BL | AQ Le LE AN Ze<br>ANA PANY<br>- 100 100.0 YZ<br>= |\NW tg | ANYZ<br>LAY SE LANNY<br>50 50.0<br>fSRREED) COREEA ee|gee)|<br>PAL<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>250 3.5<br>Tj=25°C IC=30A<br>Tj=175°C IC=60A<br>IC=120A<br>3.0 IC=240A<br>Sh, Se<br>200<br>2.5<br>150<br>2.0<br>1.5<br>COOP Beer<br>100<br>: S p<br>1.0<br>50<br>Ae T t<br>0.5<br>0 0.0<br>0 2 4 6 8 10 12 0 25 50 75 100 125 150 175<br>V GE , oATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C I C<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
7
~~High speed switching series third generation~~ IGW100N60H3
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1000 ee ee 1E+4 —————————<br>td(off)<br>a se ee ee ee ee eee | tf a a ee<br>a ee I td(on) eeee ee<br>tr<br>ee ee ee ee<br>1000<br>ptf eetf} tfeePreee |t t P | |[| |[| [|det[| [| ff<br>7c 100 LU,+— c aSSSSS====5i ee se ee ee<br>= aeeeeee ee ee ee eeeee > a<br>ee<br>O PN | aeeteeQ 100 ee ee ee ee ee<br>f i -SeeE<br>QO )| ? SSS=<br>= /7 QO= eea a e ee<br>10<br>= 2 es es es =<br>2 ee<br>Se———ee ee ee td(off) e e 10 Pt} Tt tT Tt |<br>pp tf [_—_—<br>td(on)<br>pPf| | ft ft tr a aa A<br>Pee<br>1 PPT TT [PPT] [)] 1<br>0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=3.5 Ω , Dynamic test circuit in V GE =15/0V, I C =100A,Dynamic test circuit in<br>Figure E) Figure E)<br>1000 6.0<br>f td(off)d(off) ee ee ee eee eee tee typ.<br>tff min.<br>| td(on)d(on) ee “- max.<br>trr<br>[a=a= f g =<br>fs 5.0 a<br>><br>Fit}<br>z 100 iy tt yy SO<br>co)uwuw [[_—}JOJOO ~<br>= ;aa [| [| [ {[ [| {[ [| [ | [| JT 4 no wa .<br>S beses e eb NK<br>4.0<br>e = y e - x ‘<br>et EE + S<br>(op) 10 SS = ~<br>= a Lu x<br>a ee ee ee ee 1 ‘S<br>a OO 8 .<br>a ee ee ee ee ee ee b 3.0 y<br>CEEEEEEEeery] * :<br>1 2.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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1000<br>f td(off)d(off) ee ee ee eee eee<br>tff<br>| td(on)d(on) ee<br>trr<br>[a=a= f g<br>fs<br>><br>Fit}<br>z 100 iy tt yy<br>co)uwuw [[_—}JOJOO<br>= ;aa [| [| [ {[ [| {[ [| [ | [| JT 4 no<br>S beses e eb<br>e = y e -<br>et EE<br>(op) 10 SS =<br>= a Lu<br>a ee ee ee ee 1<br>a OO 8<br>a ee ee ee ee ee ee b<br>CEEEEEEEeery]<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =100A, r G=3.5 Ω ,Dynamic test circuit<br>Figure E)<br>**----- End of picture text -----**<br>
( _I_ C=1.6mA)
8
IGW100N60H3
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20 30<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>25<br>15<br>Ww uw ’<br>7) 7) 20 a<br>@) O ao<br>aa 77 aa “<br>O , o) a<br>orWw 10 “ Wwo 15 aaa<br>= “ z Y wee<br>Ww v im a“ aa<br>10<br>= 5 : LL 7 |<br>. a = - ra 7 u- -<br>5<br>aaeeae aa : < -<br>eee -<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V,=400V, (inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, r G=3.5=3.5 Ω ,Dynamic test circuit in V GE =15/0V, I C =100A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=400V,=400V, (inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, r G=3.5=3.5 Ω ,Dynamic test circuit in V GE =15/0V, I C =100A, Dynamic test circuit in<br>Figure E) Figure E)<br>8 9<br>Eoff Eoff<br>Eon Eon<br>7 Ets 8 Ets<br>7<br>6<br>Ww uw a<br>7)n 7)o 6 = we<br>5<br>—! a a 7?<br>O 19) 5 7<br>WW8 4 P| | | eee WW8 “ :<br>Zz Zz ue<br>Ww Ww 4 .<br>Zz 3 Zz aa<br>PLO me:O 3 = —<br>2<br> EeSe 2 7 —<br>Tt 1 eee TT<br>1<br>0 0<br>25 50 75 100 125 150 175 200 250 300 350 400 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =175°C, V GE=15/0V,<br>I C =100A, r G=3.5 Ω ,Dynamic test circuit in I C =100A, r G=3.5 Ω ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
9
IGW100N60H3
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**----- Start of picture text -----**<br>
15 1E+4<br>120V fo, a<br>ra a a a<br>480V<br>/ re ee ee ee<br>/ , a Ciss<br>y ’ ee ee ee ee Coss I<br>Crss<br>S / a a ee I<br>Lu /<br>10 1000<br>:F /\, - EL| .7<br>ro)i | fF ‘ —a poe T<br>> , Ww a<br>oe ---' O EN ee ee<br>ul ~ Z 9 a<br>= Spele a ee ee ee<br>i ie<br>uw O<br>im5 5 . 100 ee a ss<br>-<br>ee<br>a eeee<br>0 10<br>0 100 200 300 400 500 600 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 17. Typical ( _I_ C=100A)
Figure 18.
( _V_ GE
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1600 13<br>12<br><x 1400 | | | ts ef ft<br>td Ww 11<br>1200<br>a / = \<br>Kk<br>10<br>S 1000 Zzz \<br>a 9<br>800<br>OkK<br>8<br>3 600 g<br>oc Y O 7 Pt | KE<br>O<br>400<br>EL ef oN\<br>6<br>7p) ~<br>200<br>5<br>0 4<br>10 12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19. Typical short circuit function of gate-emitter ( _V_ CE 400V, _T_ vj 150°C)
Figure 20. Short circuit withstand time gate-emitter voltage ( _V_ CE 400V, start at _T_ vj ≤ 150°C)
10
IGW100N60H3 High speed switching series third generation
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IGW100N60H3
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## PG-TO247-3
12
Rev.�1.2,��2013-02-07
IGW100N60H3
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IGW100N60H3
## IGW100N60H3
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-07-05|Preliminarydata sheet|
|1.2|2013-02-07|Preliminarydata sheet|
## **Information**
## **Warnings**
endangered.
14
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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