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IGP30N65H5XKSA1
IGBT, 55 A, 1.65 V, 188 W, 650 V, TO-220, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 188W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 55A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.739 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT High speed 5 IGBT in TRENCHSTOP TM _ 5 technology IGP30N65H5 IGP30N65H5 **==> picture [468 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> High speed 5 IGBT in TRENCHSTOP TM _ 5 technology<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>¢ 650V breakdown voltage G<br>* Low gate charge Q G E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications C<br>¢ Pb-free lead plating; ROHS compliant :<br>*« Complete product spectrum and PSpice Models: “4<br>http://www.infineon.com/igbt/<br>Applications:<br>* Solar converters f ff i<br>¢ Uninterruptible power supplies iff<br>* Welding converters Ls<br>* Mid to high range switching frequency converters G C “a4<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IGP30N65H5|650V|30A|1.65V|175°C|G30EH5|PG-TO220-3| 2 IGP30N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.�2.2,��2014-12-04 IGP30N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||55.0<br>35.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||90.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||188.0<br>93.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.80|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|39.5|-|S| Rev.�2.2,��2014-12-04 4 IGP30N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF| |Output capacitance|_C_oes||-|45|-|| |Reverse transfer capacitance|_C_res||-|7|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|70.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns| |Rise time|_t_r||-|9|-|ns| |Turn-off delaytime|_t_d(off)||-|177|-|ns| |Fall time|_t_f||-|14|-|ns| |Turn-on energy|_E_on||-|0.28|-|mJ| |Turn-off energy|_E_off||-|0.10|-|mJ| |Total switchingenergy|_E_ts||-|0.38|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns| |Rise time|_t_r||-|4|-|ns| |Turn-off delaytime|_t_d(off)||-|180|-|ns| |Fall time|_t_f||-|22|-|ns| |Turn-on energy|_E_on||-|0.09|-|mJ| |Turn-off energy|_E_off||-|0.03|-|mJ| |Total switchingenergy|_E_ts||-|0.12|-|mJ| Rev.�2.2,��2014-12-04 5 IGP30N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns| |Rise time|_t_r||-|10|-|ns| |Turn-off delaytime|_t_d(off)||-|208|-|ns| |Fall time|_t_f||-|16|-|ns| |Turn-on energy|_E_on||-|0.41|-|mJ| |Turn-off energy|_E_off||-|0.14|-|mJ| |Total switchingenergy|_E_ts||-|0.55|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns| |Rise time|_t_r||-|5|-|ns| |Turn-off delaytime|_t_d(off)||-|228|-|ns| |Fall time|_t_f||-|27|-|ns| |Turn-on energy|_E_on||-|0.15|-|mJ| |Turn-off energy|_E_off||-|0.05|-|mJ| |Total switchingenergy|_E_ts||-|0.20|-|mJ| 6 Rev.�2.2,��2014-12-04 ~~High speed switching series fifth generation~~ IGP30N65H5 **==> picture [474 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 100 200<br>aPALa ETTeeeeeeTTTee ee 180 \Nee<br>160<br>a ee || 140 KTP<br>ee 10<br>5 2 2 ee Zz \<br>120<br>o | not for linear use |<br>ro) 7)<br>100<br>or PT TTT ST ETTTEI .<br>im eh Ww 80 FP } Ff KO] fF<br>=<br>1<br>S N<br>oO Pt tt Ft - 60 i<br>eeePTaTTT eesti eatIUieee ea 4020 awePf ff dL UK<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br> **==> picture [469 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 60 90<br>LE<br>80<br>50 eS Ay<br>70 VGE=18V A ae<br>15V<br>=| ELL OD<br>40 60<br>biW \ biW 12V LEa UY] JO<br>50 10V<br>PP ON JEL eg<br>30 8V<br>5 Soo \ 5 40 PLR| If /<br>O O 7V /<br>Mt EL 6V MW<br>20 30<br>5V<br>20 Wr<br>4V<br>\ | LLNS SECT<br>10<br>OR<br>10<br>DANS<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) Figure 4. Typical ( _T_ vj=25°C) 7 High speed switching series fifth generation IGP30N65H5 **==> picture [472 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> 90 90<br>Tj=25°C<br>80 PLA 80 a Tj=150°C |<br>Ay} | | Ee<br>70 VGE=18V 70<br><<br>15V<br>< 60 | ce 60 Pt dp<br>WW 12V f WW<br>: e/a ett itty<br>50 10V 50<br>P | | bemilcy) L Litt tg<br>8V<br>s 40 || oem ide 40 EE<br>° 7V 7<br>2<br>6V<br>A 30 tL Cpe EL 30 de<br>~ 5V its A<br>20 TL RA 20 Eas<br>4V NEE eevee<br>10 10<br>ARN Le<br>0 0<br>0 1 2 3 4 5 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 2.50<br>IC=7.5A<br>IC=15A<br>2.25 IC=30A<br>5 ETD] Gee<br>td(off)<br>3 E tf L<br>ee 2.00 e 100 H ttd(on)r a eeEan<br>Pa0880 2a0)5 ee —-— eee----——<br>Ee s a e e<br>Ss 1.75 n ee ee ee ee ee e e e<br>2 GeGR008) ecenese===<br>E 1.50 Ee en a el eee<br>rs 1.25 a 10 Es<br>42 CE * aBeea ee<br>1.00<br>e) ee ee ee<br>6ERREEEFEE<br>CCE) a ee ee ee ee eee<br>0.75<br>0.50 1<br>0 CePPPEA) 25 50 75 100 125 150 175 § Geepeeree 0 10 20 30 40 50 60 70 80 90<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V) Figure 8. inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ n GE =15/0V. _r_ G=23 Ω , Dynamic test circuit in Figure E) 8 IGP30N65H5 **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>= 1 td(off) a == +CLitsttstl | os<br>| tf a ee ee ee eee a<br>td(on)<br>I = ee<br>tr<br>| Pe<br>100 td(off)<br>e e ee tf J}<br>td(on)<br>tr<br>D — | a ee ee ee eee<br>= 100 EE oy (a Reee<br>a<br>uw a a a a | |<br>Fa<br>= po = P|<br>Oa eee ee<br>a eee ce<br>E — 7 mest ~- lero -— E 10 ee<br>10<br>. rr - a<br>9aeei seee aee ee ee ee<br>Pot | | | hE TT pj | | | | |<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br> Figure 9. Typical switching times as a **resistor** (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _I_ C =15A,Dynamic test Figure E) Figure 10. (inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=23 ,Dynamic test circuit in Figure E) **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0 5.0<br>typ. Eoff<br>5.5 min. 4.5 Eon<br>max. Ets<br>-Ww FI LLLL) FOO<br>5.0 4.0<br>ge= Ps SGE Fe<br>| —<br>gS 4.5 fw Le 3.5 E e<br>5 fe)<br>eee ee<br>So) 4.0 hb = —! 3.0<br>BP SR ee Ee<br>x 3.5 ——~ : = x 2.5 4<br>kKe 3.0 foe)S POR_ Zzfe 2.0 bere<br>ef1 2.5 ~ ~ ON FE 1.5 Lems o<br>Bf a ee<br>2.0 1.0<br>ie te<br>es ec<br>1.5 0.5<br>1.0 0.0<br>ee ee ee<br>0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Gate-emitter threshold ( of _I_ C=0.3mA) junction temperature Figure 12. (inductinductive “load, collector _T_ vj = Sanrent, _V_ CE=400V, _V_ GE =15/0V, _r_ G=23 Ω ,Dynamic test Figure E) 9 IGP30N65H5 **==> picture [249 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>Eoff<br>Eon<br>Ets<br>1.0<br>£& £&<br>Ww “ Ww<br>pee7) 0.8 a“ 7)<br>i<br>aa) ee“ _ aa)<br>ee eeee<br>nm 0.6 5 Ww<br>uw a wee Ww<br>Gof let ey |<br>Oeit 0.4 27 ki) | oy | | O<br>é — _|<br>e [ey | | | |[el §<br>a 0.2 IT | | tt °<br>0.0 Pt te tT |<br>5 15 25 35 45 55 65 75 85<br>r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses asa<br>function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =15A, Dynamic test circuit in<br>Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [233 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8<br>Eoff<br>Eon<br>0.7 Ets<br>£& 0.6<br>Ww<br>7)<br>0.5<br>aa)<br>a<br>Ww 0.4 =<br>Ww<br>|<br>0.3<br>O<br>0.2<br>§<br>° —<br>0.1<br>osnie<br>0.0 pt | |<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>E<br>**----- End of picture text -----**<br> Figure 14. (inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=23 ,Dynamic test circuit in Figure E) **==> picture [471 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7 16<br>Eoff 130V<br>Eon 520V<br>Ets 14<br>0.6<br>2 Li<br>12<br>0.5<br>oD ale. ate cer72,FEx 10 VA ;<br>7) £F<br>0.4<br>Q o* w / 7<br>8<br>ra of rm<br>: v F 7<br>0.3 . : pf<br>. . 6<br>EFO 0.2 = ue | Za :O)< ><br>4<br>0.1<br>2<br>0.0 0<br>200 250 300 350 400 450 500 0 10 20 30 40 50 60 70 80<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> Figure 15. Figure 16. Typical ( _I_ C=30A) **==> picture [91 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br> _I_ C =15A, _r_ G=23 Figure E) 10 IGP30N65H5 **==> picture [469 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1E+4 1<br>EE Cies ———————_—_— ee ee ee eee<br>iH Coes a es ie o-ooa<br>Cres<br>I a ee ee YZ<br>\a epee ft Lp<br>D=0.5<br>1000 a a es 2ec eAeeZA<br>0.2<br>L |e e Oe 0.1 LAL MI 0.1<br>0.05<br>OZe 100 aa a a a z ereeo/c 0.020.01<br>Qo Fe ee ee Hr et ee single pulse le Ha<br>a oo lll<br>8. aRe eeLT]ae im<br>Se ee ee ee ee uu 0.01 LA NE<br>Pm~ PT 92 FRA|SS SE all<br>10 ———————a a ai<br>|_—__}—________|________j_-er FAA |<br>a PTC | (LMC CTCTT<br>i: 1 2 3 4<br>ri[K/W]: 0.07749916 0.2797936 0.2828165 0.1598907<br>τ i[s]: 3.7E-5 3.6E-4 4.9E-3 0.04086392<br>1 PFee| | ee| ffee| 0.001 | | | TT TT<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 17. ( _V_ GE > Figure 18. IGBT ( _D_ = _t_ p/T) 11 IGP30N65H5 **==> picture [146 x 65] intentionally omitted <==** High�speed�switching�series�fifth�generation ## PG-TO220-3 12 Rev.�2.2,��2014-12-04 IGP30N65H5 **==> picture [146 x 65] intentionally omitted <==** High�speed�switching�series�fifth�generation **==> picture [249 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> v GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>**----- End of picture text -----**<br> **==> picture [253 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> v GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>v CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt a b<br>a b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>t<br>**----- End of picture text -----**<br> Figure D. **==> picture [122 x 111] intentionally omitted <==** **==> picture [10 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Ls, relief capacitor C ,r (only for ZVT switching) 13 Rev.�2.2,��2014-12-04 IGP30N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High speed switching series fifth generation ## Revision History ## IGP30N65H5 Revision: 2014-12-04, Rev. 2.2 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2014-06-11|Final data sheet| |2.2|2014-12-04|Minor changes Fig.1 and Fig.14| ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2, 2014-12-04 14
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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