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IGP30N65F5XKSA1
IGBT, 55 A, 1.6 V, 188 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5 Series
- Power Dissipation: 188W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 55A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.688 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
High speed 5 FAST IGBT in TRENCHSTOP _ TM 5 technology
IGP30N65F5
IGP30N65F5
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High speed 5 FAST IGBT in TRENCHSTOP TM _ 5 technology<br>Features and Benefits: C<br>High speed F5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>* Low gate charge Q G G<br>* Ideal fit with SIC Schottky Diode in boost converters E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications C<br>¢ Pb-free lead plating; ROHS compliant :<br>*« Complete product spectrum and PSpice Models: 4<br>http://www.infineon.com/igbt/<br>Target Applications: <gf<br>* Solar converters ff if<br>¢ Uninterruptible power supplies ‘aes<br>* Welding converters Ls<br>* Mid to high range switching frequency converters G C “a<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGP30N65F5|650V|30A|1.6V|175°C|G30EF5|PG-TO220-3|
2
IGP30N65F5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.�2.2,��2014-12-04
IGP30N65F5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||55.0<br>35.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||90.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||188.0<br>93.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.80|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|38.0|-|S|
Rev.�2.2,��2014-12-04
4
IGP30N65F5
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|45|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|65.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|170|-|ns|
|Fall time|_t_f||-|10|-|ns|
|Turn-on energy|_E_on||-|0.28|-|mJ|
|Turn-off energy|_E_off||-|0.07|-|mJ|
|Total switchingenergy|_E_ts||-|0.35|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|174|-|ns|
|Fall time|_t_f||-|15|-|ns|
|Turn-on energy|_E_on||-|0.09|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.11|-|mJ|
Rev.�2.2,��2014-12-04
5
IGP30N65F5
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## High�speed�switching�series�fifth�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|203|-|ns|
|Fall time|_t_f||-|3|-|ns|
|Turn-on energy|_E_on||-|0.38|-|mJ|
|Turn-off energy|_E_off||-|0.12|-|mJ|
|Total switchingenergy|_E_ts||-|0.50|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|230|-|ns|
|Fall time|_t_f||-|9|-|ns|
|Turn-on energy|_E_on||-|0.15|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.19|-|mJ|
6
Rev.�2.2,��2014-12-04
~~High speed switching series fifth generation~~ IGP30N65F5
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100 200<br>PLALa TTT ETT eeETTee 180 \Nee<br>160<br>PAL LLM TE Ea 140 KTP<br>ee 10<br>5 2 2 ee Zz \<br>120<br>Do |P J— not for linear use i ial<x<br>100<br>or a ee eh ee .<br>if eh uw 80 FP } Ff KO] fF<br>=<br>1<br>S N<br>oO Pt tt Ft - 60 i<br>eeePTaTTT eesti eatIUieee ea 4020 awePf ff dL UK<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
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60 90<br>LE<br>80<br>50 eS Ay<br>70 VGE=18V A ae<br>15V<br>=| ELL OD<br>40 60<br>WWb \ bWW 12V LEa UY] JO<br>50 10V<br>PP ON JEL eg<br>30 8V<br>5 Soo \ 5 40 PLR| If /<br>O O 7V /<br>Mt EL 6V MW<br>20 30<br>5V<br>20 Wr<br>4V<br>\ | LLNS SECT<br>10<br>OR<br>10<br>DANS<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
7
~~High speed switching series fifth generation~~ IGP30N65F5
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90 90<br>Tj=25°C<br>80 ee 80 Tj=150°C ee<br>Ay} a<br>70 VGE=18V 70<br>eeeSoapif LL<br>15V<br>: 60 e e 60 e<br>12V f WW<br>WW = thd or &<br>el 50 10V bem cy) 50 Litt<br>e a il L e 4<br>8V<br>s 40 || oops 40 EE A<br>7V<br>Ep RO ae<br>6V Hd | PT<br>= 30 | HA TT = 30 LYca<br>5V<br>STL 20 RANa 20 Ear:<br>Be) 4V ONee eee eee<br>10 10<br>PAN Le<br>0 0<br>0 1 2 3 4 5 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br>
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2.00<br>IC=7,5A<br>IC=15A<br>IC=30A<br>ie ee<br>1.75 td(off)<br>3a eeeee a tf n |<br>100<br>td(on)<br>tr<br>: pepe Fe Lad<br>S y J<br>Ee 1.50 s p o<br>pf dg P a<br>x > | | | | 7leq]ff<br>1.25<br>ey eee eee ec<br>WW r Le<br>ow —— ee a Oo 7 cee<br>PR eee<br>O E 10 a ee ee es<br>1.00<br>4 A a ee<br>2]e) | | | | oy”) 6 aARSEa e e e ee ee ee<br>DQ eee<br>0.75<br>0.50 1<br>0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=23 Ω , Dynamic test Figure E)
8
IGP30N65F5
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**----- Start of picture text -----**<br>
1000 a SS ES ES eS<br>td(off)<br>tf<br>| a ee ee ee rr<br>I td(on) a eeee<br>| tr eee<br>pee 100 td(off)d(off)<br>tff<br>ras 1 td(on)d(on) a a a<br>trr<br>a fe pe<br>e 100 l t. | aeeee ee ee ee eee<br>| i] fs E eeee<br>a<br>= aa aa aa a | |<br>F a ee<br>O aee ee<br>a ee<br>10<br>10<br>ee ee ee ee<br>T_T po} tf fp pees<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =15A,Dynamictest circuit in I C =15A, r G=23 ,Dynamictest circuit in<br>Figure E) Figure E)<br>6 5.0<br>typ. Eoff<br>min. 4.5 Eon<br>max. Ets<br>geWw ee<br>5<br>Si p +e 4.0 ee<br>3.5<br>: e |) it ||e<br>Q 4 = =< 7p) a“<br>Se ae ee 3.0 ee<br>ee ee ee<br>3 2.5<br>; wt PN BE<br>2.0<br>i ae<br>: 2 ~~ = “ ’<br>sf 6 fe ed<br>1.5<br>1.0<br>pp ee<br>1<br>0.5<br>Se<br>0 Pp of | ct | | 0.0 ete]| |<br>0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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100 td(off)d(off)<br>tff<br>1 td(on)d(on) a a a<br>trr<br>fe pe<br>fs | E aeeee ee ee eee<br>|<br>ee<br>10<br>ee ee ee<br>po} tf fp pees<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.3mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=23 Ω ,Dynamic test Figure E)
9
IGP30N65F5
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**----- Start of picture text -----**<br>
1.0 0.8<br>Eoff Eoff<br>0.9 Eon Eon<br>Ets 0.7 Ets<br>0.8<br>-~ {r ll irl |,<br>0.6<br>e [oedg<br>Ww 0.7 2 i<br>7) ” 77 7)<br>o “ oc o a4<br>0.5<br>gfe 0.6 rae —!<br>—! eT | 8 2<br>a vO a a —_<br>Ww 0.5 2 < Ww 0.4<br>Ww ae a Ww<br>oO 0.4 a a oO<br>Zzlet _iy | | | Z 0.3<br>7 Dae 7<br>ge 0.3 te :<br>0.2<br>6 |<br>0.2<br>0.1<br>0.1 P|e|p rTe| e__——_<br>0.0 0.0<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses asa Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =15A, Dynamic test circuit in I C =15A, r G=23 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
0.6 16<br>Eoff 130V<br>Eon 520V<br>Ets 14<br>0.5 ee 7,<br>2 ee ee Ji<br>12<br>(op) 0.4 < <x ’<br>pe oe) Pe<br>10<br>> ; 7 > ><br>0.3 8<br>ef ey P e<br>6<br>=O 0.2 27 ca E<x<br>= o - 4<br>rn es<br>0.1<br>2<br>0.0 0<br>200 250 300 350 400 450 500 0 10 20 30 40 50 60 70 80<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=30A)<br>(inductive load, T vj =150°C, V GE=15/0V,<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
_I_ C =15A, _r_ G=23 Figure E)
10
IGP30N65F5
**==> picture [469 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
1E+4 1<br>EE Cies ———————_—_— ee ee ee eee<br>iH Coes a es ie o-ooa<br>Cres<br>I a ee ee YZ<br>\a epee ft Lp<br>D=0.5<br>1000 a a es 2ec eAeeZA<br>0.2<br>L |e e Oe 0.1 LAL MI 0.1<br>0.05<br>OZe 100 aa a a a z ereeo/c 0.020.01<br>Qo Fe ee ee Hr et ee single pulse le Ha<br>a oo lll<br>8. aRe eeLT]ae im<br>Se ee ee ee ee uu 0.01 LA NE<br>Pm~ PT 92 FRA|SS SE all<br>10 ———————a a ai<br>|_—__}—________|________j_-er FAA |<br>a PTC | (LMC CTCTT<br>i: 1 2 3 4<br>ri[K/W]: 0.07749916 0.2797936 0.2828165 0.1598907<br>τ i[s]: 3.7E-5 3.6E-4 4.9E-3 0.04086392<br>1 PFee| | ee| ffee| 0.001 | | | TT TT<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 17. ( _V_ GE
> Figure 18. IGBT ( _D_ = _t_ p/T)
11
IGP30N65F5
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High�speed�switching�series�fifth�generation
## PG-TO220-3
12
Rev.�2.2,��2014-12-04
IGP30N65F5
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High�speed�switching�series�fifth�generation
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**----- Start of picture text -----**<br>
v GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
v GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>v CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt a b<br>a b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>t<br>**----- End of picture text -----**<br>
Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Ls, relief capacitor C ,r (only for ZVT switching)
13
Rev.�2.2,��2014-12-04
IGP30N65F5
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## High speed switching series fifth generation
## Revision History
## IGP30N65F5
Revision: 2014-12-04, Rev. 2.2
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2014-06-11|Final data sheet|
|2.2|2014-12-04|Minor changes Fig.1 and Fig.14|
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Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
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## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.2, 2014-12-04
14
Updated at June 9, 2026
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