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IGD15N65T6ARMA1
IGBT, 30 A, 1.5 V, 100 W, 650 V, TO-252 (DPAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT6
- Power Dissipation: 100W
- Transistor Mounting: Surface Mount
- DC Collector Current: 30A
- Power Dissipation Pd: 100W
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 650V
- Automotive Qualification Standard: -
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.5V
- Collector Emitter Saturation Voltage Vce(on): 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 1.06 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
IGD15N65T6 CE(sat) junction withstand field-stop tight parameter ruggedness, CEsat and charge Q G www.infineon.com/igbt > Drives * GPD (general purpose drives) **==> picture [95 x 239] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>C<br>“252.5<br>A a!<br>G f<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IGD15N65T6|650V|15A|1.5V|175°C|G15ET6|PG-TO252-3| Datasheet www.infineon.com 2020-04-20 IGD15N65T6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2 V�2.3 2020-04-20 Datasheet IGD15N65T6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||30.0<br>18.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||57.5|A| |Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||57.5|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤360V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||100.0<br>50.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.50|K/W| |Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W| |Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=11.5A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=150°C|-<br>-<br>-|1.50<br>1.65<br>1.75|1.90<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.20mA,_V_CE=_V_GE|4.8|5.6|6.4|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C|-<br>-|-<br>360|30<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=11.5A|-|11.3|-|S| 3 V�2.3 2020-04-20 Datasheet IGD15N65T6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|1020|-|pF| |Output capacitance|_C_oes||-|50|-|| |Reverse transfer capacitance|_C_res||-|20|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=11.5A,<br>_V_GE=15V|-|37.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=11.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns| |Rise time|_t_r||-|22|-|ns| |Turn-off delaytime|_t_d(off)||-|117|-|ns| |Fall time|_t_f||-|42|-|ns| |Turn-on energy|_E_on||-|0.23|-|mJ| |Turn-off energy|_E_off||-|0.11|-|mJ| |Total switchingenergy|_E_ts||-|0.34|-|mJ| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=11.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns| |Rise time|_t_r||-|23|-|ns| |Turn-off delaytime|_t_d(off)||-|135|-|ns| |Fall time|_t_f||-|67|-|ns| |Turn-on energy|_E_on||-|0.32|-|mJ| |Turn-off energy|_E_off||-|0.18|-|mJ| |Total switchingenergy|_E_ts||-|0.50|-|mJ| V�2.3 2020-04-20 Datasheet 4 IGD15N65T6 **==> picture [475 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>_ | 0Pt TATeee TTT | _ 100 \.<br>~€ |fill tp = 1µs i i 80 \<br>WweA 10 Lil Y8 \<br>na3 PtePE tiHH ie BNC\<br>a 0aee|) 60 \ .<br>O Pt TT ETT o \<br>i<br>40<br>ee°. 1 e aa e eeee U| o. \ \\<br>Pt [TT] eeeETT 20 LINE\<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>( T vj ≤ 175°C)<br>36 60<br>VGE=20V<br>18V<br>30 50 15V<br>12V<br><x <x 10V<br>24 40<br>ow ow 8V<br>7V<br>O 18 ‘ EnV) 30<br>\ O 6V \\\\f/ vam<br>uw Ww |<br>12 20<br>KT OW<br>i)<br>6 10<br>\ ) Sanne<br>\ F N<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) Figure 4. Typical ( _T_ vj=25°C) Datasheet 5 2020-04-20 IGD15N65T6 **==> picture [471 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 60 60<br>VGE=20V Tvj = 25°C<br>= Tvj = 150°C /<br>18V<br>50 15V \ [f__/ 50<br>12V<br>< <<br>10V<br>40 40<br>5 8V<br>: Gn /A7 ne: [,<br>7V<br>z 30 AW/ : 30 [/<br>6V<br>(e) \ Ay WA a x<br>PL / (e)<br>NATE Lf<br>20 20<br>O VW O<br>10 10<br>KK<br>AVGEEEE<br>ee<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>2.6 Lt<br>IC = 23A td(off)<br>IC = 11.5A tf<br>IC = 5.75A td(on)<br>EJ tr<br>4 EFe<br>100<br>7.<br>Fe 2.2 7 e eee<br>P A oD ee<br>$= i a e e<br>PRT a iee e<br>1.8<br>Ww =_— I<br>10<br>FEPL eps= = fea a<br>9 _a47- ” a<br>4 . a es<br>oe) 1.4 a es<br>a ee<br>1.0 1<br>0 25 50 75 100 125 150 175 5 10 15 20 25<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>( a function V GE=15V) of junction temperature collector"" uctive purrentload, purrentload,load, T vj = 150°C , V CE=400V,=400V,<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> **==> picture [189 x 48] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 8. Typical switching times as a<br>collector"" uctive purrentload, purrentload,load, T vj = 150°C , V CE=400V,=400V,<br>V GE =0/15V, r G=47 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> 6 Datasheet 2020-04-20 IGD15N65T6 **==> picture [491 x 697] intentionally omitted <==** **----- Start of picture text -----**<br> _—— —<br>| td(off) a ee ee td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>100 S O<br>eam pee R E<br>|tery) S e<br>100 || ESS ==eeSS==<br>c ee | rT =<br>= Ee ae ee ee ee eee eee =<br>oOS2 afeeseeDrag ae 2oO L LESS ono<br>5a 5<br>10<br>= 10 casa —————————<br>0 aee aeee<br>aSea aeeee ee ee<br>eee<br>1 1<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =11.5A,Dynamic test circuit in I C =11.5A, r G=47 Ω ,Dynamic test circuit in<br>Figure E) Figure E)<br>6 1.2<br>typ. Eoff<br>= EEonts /<br>= /<br>Ww 1.0 :<br>Q5<br>F<br>5 \ D /<br>fe) \ € /<br>0.8<br>9 (op) ¢<br>ro) @)n /7 7<br>= 4 3 7<br>wo > / 7<br>uw O 7 7<br>ag w Y ZC<br>4 0.6<br>a Ww 7 Yo<br>= oO 0.4 a<br>ul \ FE “<br>3<br>0.2<br>zi \ S| Ue<br>2 0.0<br>25 50 75 100 125 150 175 4 8 12 16 20 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.20mA) (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, r G=47 Ω ,Dynamic test circuit in<br>Figure E)<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Datasheet 7 2020-04-20 IGD15N65T6 **==> picture [474 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 0.6<br>Eoff Eoff<br>Eon Eon<br>0.7 Ets Ets<br>0.5<br>Fz ae —_ set<br>= 0.6 o rae Fz= Pea ood”<br>nee a -*<br>ep) ae 0.4 7<br>(op) o ep) 2<br>fo) 0.5 Poe (op) “7<br>—! o> fo)—! -* --<br>> “7 - > -<br>-* © -<br>2 0.4 2 0.3<br>ai Zc - Ww _ -<br>oO - oO _<br>Zz 0.3 - Zz<br>:: - ° Bn: 0.2 ==<br>0.2 L F oe<br>0.1<br>0.1<br>0.0 0.0<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Figure 14.<br>E E<br>**----- End of picture text -----**<br> **==> picture [151 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, I C =11.5A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> **==> picture [154 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, V CE =400V, V GE=0/15V,<br>I C =11.5A, r G=47 Ω ,Dynamic test circuit<br>Figure E)<br>**----- End of picture text -----**<br> **==> picture [471 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7 16 P|<br>Eoff —_ V CC = 130V<br>Eon V CC<br>Ets oPa 14 —- Cc =520V / /<br>0.6 /<br>12<br>7) 0.5 uw<br>8—! y, 7Ya Yo EEQ5 10 / //<br>25 0.4 ¢ a [. —_— Sf<br>nm 7 7 E 8<br>Zz “ 7 kK<br>uw 0.3 Fa =<br>=“2 6<br>O<br>?<br>Ee 0.2 a a y /<br>Z ew /<br>4<br>- a<br>ge<br>0.1 ao | 2 ft<br>tL<br>0.0 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=11.5A)<br>(inductive load, T vj =150°C, V GE=0/15V,<br>I C =11.5A, r G=47 Ω ,Dynamic test circuit in<br>Figure E)<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> 8 Datasheet 2020-04-20 IGD15N65T6 **==> picture [472 x 299] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 rea| ft————————tt =xoC 1 PrCOTeeCoEchZvi on<br>=== ===<br>KR > Sos <i ‘A<br>D = 0.5<br>a a ST<br>a 0.1 IN 0.2 oy 1<br>VS<br>©Z 100 —_—ANDaas748a *= TITERSSenSereneL SrAiea25tl 1T}eee 0.10.05 LEeetenee ELT<br>5 SSL TTat __| 0.02 CE<br>0.01<br>pee Ge single pulse<br>" é Tf EU<br>0.01<br>Tore 6 t t<br>10 Tl<br>1 e CCiesoes ee eeree 200PAY, | ||<br>Cres<br>| ee es ee SAT | | a i: 1 2 3 4 5 6<br>ri[K/W]: 1.7E-3 0.29395 1.03777 0.14936 0.01609 1.1E-3<br>τ i[s]: 1.9E-5 2.1E-4 1.0E-3 5.7E-3 0.17693 3.6404<br>1 Po t t tT 0.001 DD ———— |<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> 9 Datasheet 2020-04-20 IGD15N65T6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## Package Drawing PG-TO252-3 **==> picture [391 x 283] intentionally omitted <==** **==> picture [140 x 55] intentionally omitted <==** **==> picture [129 x 40] intentionally omitted <==** **==> picture [158 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br> **==> picture [83 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br> 10 V�2.3 2020-04-20 Datasheet IGD15N65T6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 11 V�2.3 2020-04-20 Datasheet IGD15N65T6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Revision�History** IGD15N65T6 ## **Revision:�2020-04-20,�Rev.�2.3** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.2|2020-03-16|Final Data sheet| |2.3|2020-04-20|Final| 12 V�2.3 2020-04-20 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →