Image not available
Illustrative purposes only
IGD10N65T6ARMA1
IGBT, 23 A, 1.5 V, 75 W, 650 V, TO-252 (DPAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT6
- Power Dissipation: 75W
- Transistor Mounting: Surface Mount
- DC Collector Current: 23A
- Power Dissipation Pd: 75W
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 23A
- Collector Emitter Voltage Max: 650V
- Automotive Qualification Standard: -
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.5V
- Collector Emitter Saturation Voltage Vce(on): 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.865 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
IGD10N65T6
CE(sat) junction withstand field-stop tight parameter ruggedness, CEsat and charge Q G
www.infineon.com/igbt
> Drives * GPD (general purpose drives)
**==> picture [95 x 239] intentionally omitted <==**
**----- Start of picture text -----**<br>
C<br>G<br>E<br>C<br>“252.5<br>A a!<br>G f<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGD10N65T6|650V|10A|1.5V|175°C|G10ET6|PG-TO252-3|
Datasheet www.infineon.com
2020-04-29
IGD10N65T6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2
V�2.3 2020-04-29
Datasheet
IGD10N65T6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||23.0<br>14.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||42.5|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||42.5|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤360V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||75.0<br>37.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|2.00|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=8.5A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=150°C|-<br>-<br>-|1.50<br>1.65<br>1.75|1.90<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|4.8|5.6|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C|-<br>-|-<br>360|30<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=8.5A|-|8.7|-|S|
3
V�2.3 2020-04-29
Datasheet
IGD10N65T6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|790|-|pF|
|Output capacitance|_C_oes||-|41|-||
|Reverse transfer capacitance|_C_res||-|12|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=8.5A,<br>_V_GE=15V|-|27.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=8.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|106|-|ns|
|Fall time|_t_f||-|46|-|ns|
|Turn-on energy|_E_on||-|0.20|-|mJ|
|Turn-off energy|_E_off||-|0.07|-|mJ|
|Total switchingenergy|_E_ts||-|0.27|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=8.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|123|-|ns|
|Fall time|_t_f||-|72|-|ns|
|Turn-on energy|_E_on||-|0.22|-|mJ|
|Turn-off energy|_E_off||-|0.13|-|mJ|
|Total switchingenergy|_E_ts||-|0.35|-|mJ|
V�2.3 2020-04-29
Datasheet
4
IGD10N65T6
**==> picture [487 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
80<br>100<br>o e eee<br>E EE tH 60 \<br>z A ee tp = 1µs Ill \<br>a 10 TANLAINuMPUUIT z \<br>40<br>5 SSH 8 ‘<br>: PTT PT PT \<br>SLU 1<br>20<br>es) UI UII & \<br>| en eee Il| PN‘<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Figure 2.<br>( ah D alae T C ai T vj Pea V GE area =15V) temperature Power dissipation as a function of case<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
**==> picture [469 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
24 45<br>VGE=20V<br>22<br>STILL 40 18V n/n<br>20 15V<br>PN EEE EE SA 7<br>35<br>18 12V<br>— LENE EET SY<br>10V<br>16 30<br>EPONA<br>8V<br>14<br>25 7V<br>12<br>6.5V<br>rs) ) 20 \ | _<br>10<br>§ PON a<br>8 15<br>Pp Na LN<br>6<br>EAN 8 10<br>4<br>5<br>2<br>oN L L<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>
Datasheet
5
2020-04-29
IGD10N65T6
**==> picture [490 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
45 45 LY<br>VGE=20V Tvj = 25°C /<br>Tvj = 150°C<br>40 18V \ 40 _ /<br>15V<br>35 35<br>12V<br>10V<br>30 30<br>ZzWW 8V \\ y / WWZz<br>:s 25 7V W/o\\5 25 ee<br>aa<br>6.5V<br>20 20<br>: AXW, :<br>:a W/k) 7 |ea<br>15 15<br>OA 10 KX O 10 Lfi<br>Pf |x<br>5 5<br>i» 4<br>0 SSSesZa NE 0 nee————2<br>0 1 2 3 4 5 5 6 7 8 9 10 11 12 13<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=150°C)
Figure 6. Typical ( _V_ CE=20V)
**==> picture [471 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.6<br>IC = 4.3A<br>IC = 8.5A<br>IC = 17A 100<br>Zz ae a a ee<br>fe)> a7 o Px pma| s e<br>2.2<br>E am a a ee ee e e eee<br>x a 7 Felt}fT ft ft ft<br>(op) a<br>z wo i nee ee<br>a0 Be<br>= 1.8 O<br>imrd=- -_— ZO= 10 a<br>ke = =<br>O eo a a<br>Mm eso - a<br>a 1.4 ee eeeeee ee<br>td(off)<br>tf<br>td(on)<br>tr<br>1.0 1<br>0 25 50 75 100 125 150 175 4 6 8 10 12 14 16 18<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, r G=47 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
6
Datasheet
2020-04-29
IGD10N65T6
**==> picture [474 x 626] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 ee<br>a a<br>| ee<br>100<br>ee EEE<br>a a a ee ee ee eee at<br>5nnSoS sees] Og OE<br>aGO<br>ats OPO QO OOOO<br>7 ee ean<br>= {| | | | |eeber™ |S<br>10<br>E 10 ” E AA<br>”. ee p | | | | | J fT f fT ft ff<br>e e<br>td(off) td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>E Po = t+<br>1 1<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =8.5A,Dynamic test circuit in I C =8.5A, r G=47 ,Dynamic test circuit in<br>Figure E) Figure E)<br>6 0.8<br>typ. Eoff<br>Eon<br>0.7 Ets<br>Ww ,<br>g > ot /<br>e) 5 NN (dp) 0.6 ,<br>a<br>n ,<br>0.5<br>9 . g<br>Ww oO “ 7<br>aa wa<br>4 0.4<br>+ \ i : ¢ Z<br>ww Oo 7<br>= Zz 0.3 “<br>r EF “ a“<br>La ; =r 7 ye<br>3 0.2<br>FE = “ FZ A “ > a<br>7<br>, Vo beter<br>0.1<br>> Ty |<br>2 0.0<br>25 50 75 100 125 150 175 4 6 8 10 12 14 16 18<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.15mA)
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, r G=47 Ω ,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Datasheet
7
2020-04-29
## IGD10N65T6
**==> picture [474 x 642] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.5 0.4 —<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>= 277 = o-<br>0.4<br>> S < > 0.3 a uae °<br>op) “7 (ep) -*<br>Lu o” Lu o7<br>7) Pod 7) 7"<br>¢p) -* (ep) o<br>e) -- e) ote<br>—! 0.3 * > i -<br>> 77 - > -<br>O -<br>Ww - Wi 0.2 =.<br>ii Pam oi -<br>ZzU) 0.2 - U)Zz —<br>e : a<br>ep) ep) 0.1 _———<br>oe t+<br>0.1<br>0.0 0.0<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =8.5A, Dynamic test circuit in I C =8.5A, r G=47 ,Dynamic test circuit in<br>Figure E) Figure E)<br>0.5 16 Ld<br>Eoff —_— V CC = 130V<br>Eon Z —- V CC =520V /<br>Ets nA 14 a<br>0.4<br>2& y} 7- 12 f f<br>mi7} / “a o)>.W / /7<br>) ” < 10<br>o 0.3 “ J Oa / 1<br>o “7 a x 8 f |fa<br>iiO °“ “7 E= /<br>0.2<br>Zz “ a ig 6<br>5 y im l<br>E rae ,a bE<br>3 “ Z 5 4<br>. 0.1 < LL aa<br>2<br>0.0 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]<br>E E<br>G<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=8.5A)
**==> picture [91 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
T vj =150°C, V GE=0/15V,<br>**----- End of picture text -----**<br>
**==> picture [59 x 19] intentionally omitted <==**
**----- Start of picture text -----**<br>
I C =8.5A, r G=47<br>Figure E)<br>**----- End of picture text -----**<br>
8
Datasheet
2020-04-29
IGD10N65T6
**==> picture [472 x 320] intentionally omitted <==**
**----- Start of picture text -----**<br>
f— C —_ ies | a a|<br>Coes<br>Cres<br>1000 —E fe) Cn<br>1<br>CeNS es es es es Hl ToTssON— aVf | hl<br>Dh oo Sst arr<br>e REPS At D = 0.5<br>0.2<br>2Se 100 MEF ff | o eeSt lll/ a aTEL<br>Zz a Lh 0.1<br>0.05<br>O<0 aAsp S =Ws 0.02 TT<br>oOPSS Se- Laey ( 0.01 I ill<br>0.1<br>- 10 P| rete) EA OeH single pulse CT<br>—— ns mn 0/020<br>ee<br>ee e e<br>aee | LY<br>SSS AP B i: 1 2 3 4 5 6<br>T ri[K/W]: 0.01144 0.32342 U 1.41562 0.2272 0.02116 1.2E-3<br>τ i[s]: 1.0E-5 2.0E-4 9.5E-4 5.0E-3 0.1582 3.597<br>Se || |ts<br>1 0.01<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
9
Datasheet
2020-04-29
IGD10N65T6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## Package Drawing PG-TO252-3
**==> picture [391 x 283] intentionally omitted <==**
**==> picture [140 x 55] intentionally omitted <==**
**==> picture [129 x 40] intentionally omitted <==**
**==> picture [158 x 167] intentionally omitted <==**
**----- Start of picture text -----**<br>
MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>
**==> picture [83 x 175] intentionally omitted <==**
**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>
10
V�2.3 2020-04-29
Datasheet
IGD10N65T6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [153 x 99] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
11
V�2.3 2020-04-29
Datasheet
IGD10N65T6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Revision�History**
IGD10N65T6
## **Revision:�2020-04-29,�Rev.�2.3**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2020-03-16|Final Data sheet|
|2.2|2020-04-20|Final|
|2.3|2020-04-29|Final|
12
V�2.3 2020-04-29
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →