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IGB50N65S5ATMA1
IGBT, 80 A, 1.35 V, 270 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:270W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 270W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.1 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
IGB50N65S5
## TRENCHSTOP[TM]
« Very Low _V_ CEsat , 1.35V at ¢ Plug and play replacement * 650V breakdown voltage «Low Q G * Maximum junction ¢ Pb-free lead plating; ROHS *« Complete product spectrum http://www.infineon.com/igbt/
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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGB50N65S5|650V|50A|1.35V|175°C|G50ES5|PG-TO263-3|
Datasheet www.infineon.com
2018-01-11
IGB50N65S5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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Datasheet
IGB50N65S5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>63.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||200.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||200.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||270.0<br>135.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.55|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.50<br>1.60|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2000|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|62.0|-|S|
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Datasheet
IGB50N65S5
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3000|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|11|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.2Ω,_R_G(off)=8.2Ω<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|139|-|ns|
|Fall time|_t_f||-|60|-|ns|
|Turn-on energy|_E_on||-|1.23|-|mJ|
|Turn-off energy|_E_off||-|0.74|-|mJ|
|Total switchingenergy|_E_ts||-|1.97|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.2Ω,_R_G(off)=8.2Ω<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|150|-|ns|
|Fall time|_t_f||-|68|-|ns|
|Turn-on energy|_E_on||-|0.48|-|mJ|
|Turn-off energy|_E_off||-|0.23|-|mJ|
|Total switchingenergy|_E_ts||-|0.71|-|mJ|
V�2.2 2018-01-11
Datasheet
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IGB50N65S5
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## High�speed�switching�series�fifth�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.2Ω,_R_G(off)=8.2Ω<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|55|-|ns|
|Turn-on energy|_E_on||-|1.55|-|mJ|
|Turn-off energy|_E_off||-|0.96|-|mJ|
|Total switchingenergy|_E_ts||-|2.51|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.2Ω,_R_G(off)=8.2Ω<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|188|-|ns|
|Fall time|_t_f||-|26|-|ns|
|Turn-on energy|_E_on||-|0.63|-|mJ|
|Turn-off energy|_E_off||-|0.42|-|mJ|
|Total switchingenergy|_E_ts||-|1.05|-|mJ|
V�2.2 2018-01-11
Datasheet
5
IGB50N65S5
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270 90<br>240 80<br>Nae pi ft ft | |<br>210 ee 70 e e<br>180 60<br>ef No ye EN<br>150 50<br>aN pf Ne<br>Res 120 40 eee<br>90 30<br>PEEP NESE PEAS<br>60 20<br>SeeeNe ee eee<br>Se eee<br>30 10<br>0 PPP TIN 0 EEL<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>200 200<br>VGE = 20V VGE = 20V<br>180 18V 180 18V<br>15V 15V<br>160 160<br>12V = 12V ao<br>140 140<br>Sc. 10V 10V aa<br>8V 8V<br>120 120<br>7 7V et 7V MW<br>100 100<br>6V 6V<br>80 5V 80 5V<br>YESS ESE<br>60 60<br>40 40<br>20 20<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=175°C)
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Datasheet
2018-01-11
IGB50N65S5
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**----- Start of picture text -----**<br>
200 3.5<br>Tvj = 25°C IC = 25AC = 25A = 25A<br>180 Tvj = 150°C IC = 50AC = 50A = 50A<br>IC = 100AC = 100A = 100A<br>EJIIY|).E7).<br>3.0<br>160 PT TLI! :<br>i i atl ye<br>; Oo<br>< 140 ] llss 2.5<br>i < ae<br>eh<br>120<br>2.0<br>Osf F wees eee<br>a 100 Ee<br>- uw —<br>1.5<br>O [1 o — —<br>Wweee 80 O ee——|———|—<br>60<br>o) | 5 1.0 foo<br>O<br>40<br>0.5<br>20<br>rw LEE<br>0 0.0<br>2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 ahs |1 td(off) a eea RO aee ee 1000 ai |i td(off) eea a aeeSS ] ee ee<br>I tf ee ee ee | tf po<br>td(on) td(on)<br>tr tr<br>Ff} = |}<br>| p o | po<br>a ee a ee eeeeee<br>= 100 a ee el = 100 a<br>ip) ae es pec ip) a es<br>uw ee a a<br>=- a a ee ee ee = PO — + - — — HT —-<br>a a ee ee ee a ee ree ee<br>Q aeaeee ee ee” eeeeeee<br>so ce ee ee<br>E 7 E aaa<br>2) 10 a 2) 10 a<br>° a es ° a es<br>a es a es<br>a a<br>po a ee<br>a ee ee a eeee<br>a re a ee ee ee<br>1 1<br>0 30 60 90 120 150 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, r G=8.2 Ω , Dynamic test circuit in V GE =0/15V, I C =50A, Dynamic test circuit in<br>Figure E) Figure E)<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
3.5<br>IC = 25AC = 25A = 25A<br>IC = 50AC = 50A = 50A<br>IC = 100AC = 100A = 100A<br>: 3.0<br>ye<br>Oo<br>llss 2.5<br>< ae<br>2.0<br>F wees eee<br>Ee<br>uw —<br>1.5<br>o — —<br>O ee——|———|—<br>5 1.0 foo<br>O<br>0.5<br>LEE<br>0.0<br>10 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Datasheet
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IGB50N65S5
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**----- Start of picture text -----**<br>
1000 aa<br>1 H td(off) a aa a<br>I tf a ee ee ee eee _<br>td(on)<br>I a eeee<br>tr<br><x<br>a :<br>Kk<br>e 100 | | | | | e)|<br>ip) po (e)<br>im— a a a 1<br>=- Pea | SY — FH — — oOWy<br>OQ P E<br><== ee -<br>= La<br>ep E E<br>2)7 10 po a eS Ww=<br>ee<br>a ee se x<br>a eseo)<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
6<br>typ.<br>|— |<br>5<br>4<br>oN<br>3 ——~<br>—~<br>NN<br>2<br>1<br>0<br>25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C]<br>**----- End of picture text -----**<br>
Figure 9.
Figure 10.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =50A, _r_ G=8.2 , Dynamic test circuit Figure E)
( _I_ C=0.5mA)
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**----- Start of picture text -----**<br>
15 3.5<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>/ | Pra<br>3.0<br>_—7 12 / wr)— “7 Lc<br>” / ” 2.5 anal<br>o o<br>@) / @)<br>—! 9 / —!<br>> / > 2.0 =o<br>es | | ld 8 =<br>us a us ao<br>oOZz 6 / oO2 1.5<br>E vA Zi FE 1.0 L _<br>n/n<br>~ 3 a y ~<br>yo<br>0.5<br>0 0.0<br>0 30 60 90 120 150 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>E E<br>**----- End of picture text -----**<br>
Figure 11.
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**----- Start of picture text -----**<br>
Datasheet<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, r G=8.2 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 12.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, I C =50A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
3.0 3.5<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>3.0<br>2.5 acT — a<br>op)Lu L-- -— op) 2.5 a7<br>7) 2.0 Uber Lu Y<br>(op) -- (op)7) 7“<br>aa aa y<br>© © 2.0 ve<br>fii 1.5 Wee oo ==-—-| fi& 1.5 a c “a —<br>Z Z Yo “ “0<br>5 1.0 —S o a 7<br>1.0<br>E a) EL 7 ——<br>0.5<br>ST ee<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =50A, _r_ G=8.2 , Dynamic test circuit Figure E)
Figure 14.
(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =50A, _r_ G=8.2 , Dynamic test circuit Figure E)
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**----- Start of picture text -----**<br>
16 a<br>V CC Cies<br>_- V CC = 520V / 1E+4 H Coes ot<br>14 -— 7 H Cres ee<br>/ a<br>a ee ee ee<br>Ss 12 / [a<br>1000<br>O / / _ E E ——<br>< J / Ue e e ee<br>= 10 a<br>Q s _ Aa<br>Z<br>8<br>FEE | BS 100 PX<br>a ye<br>= / Q SS<br>ui 6 {| Ox apo<br>° 4 ES<br>10<br>a ss<br>aa<br>2 a<br>0 1<br>0 20 40 60 80 100 120 140 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=50A)
Figure 16.
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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Datasheet
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IGB50N65S5
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**----- Start of picture text -----**<br>
1<br>Fett et<br>CCH ere PTE<br>A<br>= | ee<br>S a a i att<br>D = 0.5<br>0.2<br>rm Hae TT<br>a Ul oat 0.1 I<br>0.1<br>a Seat eee c/a 0.05<br>2 ae) call |<br>4 em er 0.02 Cn<br>0.01<br><x PH ge oe CT<br>fzr aeHIATTa single pulse 111<br>ec!)<br>i 0.01 arial) a 0<br>icp) Cra A<br>2 eC HHH * i<br>Re a --|]<br>- YATE TTT TTT |<br>CYANA DM i: 1 CUI TTT 2 TUTTE CAE 3 | VT opto 4 5 ETE 6 7ll<br>ri[K/W]: 5.3E-3 0.158702 0.238385 0.134762 0.011583 1.8E-3<br>τ i[s]: 1.4E-5 3.4E-4 2.8E-3 0.013683 0.216456 3.533918<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT ( _D_ = _t_ p/T)
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Datasheet
2018-01-11
IGB50N65S5
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## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
Datasheet
V�2.2 2018-01-11
IGB50N65S5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
12
V�2.2 2018-01-11
Datasheet
IGB50N65S5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Revision�History**
IGB50N65S5
## **Revision:�2018-01-11,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-05-19|Final data sheet|
|2.2|2018-01-11|Remove of Pb-free symbol and editorial changes.|
13
V�2.2 2018-01-11
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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