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IGB50N65H5ATMA1
IGBT, 80 A, 1.65 V, 270 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:270W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 270W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.966 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGB50N65H5
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High speed IGBT in TRENCHSTOP TM __ 5 technology<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>* 650V breakdown voltage<br>«Low Q G G<br>* Maximum junction temperature 175°C E<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/ C<br>Potot enti alal ApplicatiApplications: bo@ ‘nfs<br>« Energy Generation <6<br>- Solar String Inverter o<br>+ Industrial- Solar MicroPowerInverterSupplies 6USi : —<br>- Industrial SMPS f |<br>- Industrial UPS Feed<br>G<br>¢ Metal Treatment A<br>- Welding E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGB50N65H5|650V|50A|1.65V|175°C|G50EH5|PG-TO263-3|
Datasheet www.infineon.com
2018-01-11
IGB50N65H5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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V�2.2 2018-01-11
Datasheet
IGB50N65H5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>53.7|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||150.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||150.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||270.0<br>135.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.55|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2000|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|62.0|-|S|
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Datasheet
IGB50N65H5
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3000|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|11|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|31|-|ns|
|Turn-off delaytime|_t_d(off)||-|173|-|ns|
|Fall time|_t_f||-|40|-|ns|
|Turn-on energy|_E_on||-|1.59|-|mJ|
|Turn-off energy|_E_off||-|0.75|-|mJ|
|Total switchingenergy|_E_ts||-|2.34|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.52|-|mJ|
|Turn-off energy|_E_off||-|0.18|-|mJ|
|Total switchingenergy|_E_ts||-|0.70|-|mJ|
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Datasheet
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IGB50N65H5
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## High�speed�switching�series�fifth�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|29|-|ns|
|Turn-off delaytime|_t_d(off)||-|190|-|ns|
|Fall time|_t_f||-|33|-|ns|
|Turn-on energy|_E_on||-|1.95|-|mJ|
|Turn-off energy|_E_off||-|0.73|-|mJ|
|Total switchingenergy|_E_ts||-|2.68|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|205|-|ns|
|Fall time|_t_f||-|26|-|ns|
|Turn-on energy|_E_on||-|0.75|-|mJ|
|Turn-off energy|_E_off||-|0.27|-|mJ|
|Total switchingenergy|_E_ts||-|1.02|-|mJ|
V�2.2 2018-01-11
Datasheet
5
IGB50N65H5
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270 90<br>240 NER 80 eee<br>210 ee e 70 e e ee<br>ef 180 No JEL 60 NN<br>150 50<br>PP REE ENCE<br>By 120 40 EN<br>90 30<br>PPE NEE EEN<br>is 60 ee ee Nf 20<br>PK<br>30 10<br>PPP PEN EET<br>0 0 TT<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C “CASE TEMPERATURE [°C T C “CASE TEMPERATURE[I<br>P tot I C<br>**----- End of picture text -----**<br>
Figure 1. **temperature** ( _T_ vj ≤ 175°C)
Figure 2.
**temperature** ( _V_ GE ≥ _T_ vj ≤ 175°C)
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150 150<br>135 135<br>120 120<br>VGE=20V VGE=20V<br>18V 18V<br>105 105<br>15V 15V<br>90 90<br>2/77 12V ee 12V es oe<br>75 10V 75 10V<br>8V 8V<br>60 60<br>7V 7V<br>45 6V 45 6V<br>5V 5V<br>30 30<br>15 15<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE “COLLECTOR-EMITTER VOLTAGE M V CE “COLLECTOR-EMITTER VOLTAGE I<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. ( _T_ vj=25°C)
Figure 4. ( _T_ vj=150°C)
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150 2.50<br>Tj=25°C IC=12,5A<br>135 Tj=150°C IC=25A<br>2.25 IC=50A<br>/ co |<br>120 T TTEE ii! Zzyeje)<br>Ee 2.00 =<br>105<br>1.75<br>td 90 Pa pea<br>a ow --7<br>a) Ww<br>o 75 Ee 1.50 —e<br>O oc<br>4 60 O 1.25<br>°<br>45<br>fe) 1.00<br>: 2 {| | | |<br>30<br>0.75<br>15<br>/<br>i<br>0 0.50<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
Figure 6.
( _V_ GE=15V)
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1000 aa<br>| td(off) a ee td(off)<br>1 tf ee ee eeee 1000 tf | $$ }—§ _}—_|}__}___|____<br>td(on) td(on)<br>tr tr<br>| p o ee e ee a ee<br>a e e<br>e >———+eTf Le<br>100<br>2)7 a e2) 100 Lega<br>a [eS] tt |<br>- ee ee ee ee - — a a<br>2 fe eae | 2 Peeper<br>S ~ S| eee<br>E<br>== [7<br>” 10 aa”<br>10<br>a<br>a ee [_a a —<br>a a<br>es ee ee ee ee<br>1 1<br>0 30 60 90 120 150 0 5 10 15 20 25 30 35 40<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of gate<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, r G=12 Ω , Dynamic test circuit in V GE =0/15V, I C =50A, Dynamic test circuit in<br>Datasheet Figure E) 7 Figure E) V2.2<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1000 6.0<br>1 H td(off) a a a I— typ. |<br>I tf 5.5<br>I td(on) a ee ee ee eee _<br>a eeee<br>tr<br><x 5.0<br>a :<br>e)<br>4.5<br>oe e e<br>100<br>ip) a i<br>im poa a a (e) 4.0 hb x<br>=- aa aeea |Wy we—<br>3.5<br>OQ ar] FE pw<br><= -<br>ei e keee 3.0 ee eee—<br>=<br>et| E E<br>10<br>7poa Ww 2.5<br>ee<br>a eseo) 2.0<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =50A, _r_ G=12 , Dynamic test circuit in Figure E)
Figure 10.
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( I C=0.5mA)<br>**----- End of picture text -----**<br>
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12 5.0<br>Eoff Eoff<br>11 Eon 7 Eon<br>4.5<br>Ets Ets<br>EV I ee / BEE<br>ee<br>10 ee/<br>4.0<br>9<br>LU 7 LU 3.5<br>ep)o 8 7 / ep)ep) “7<br>—!Bp ee)/ —! 3.0 LeeS<br>> 7 > y<br>w 7 7 ag 2 _ —<br>Wiee 6 eea; Wi ee 2.5 s ee<br>Zzeee7 Zz a —<br>5 O _<br>O ee eee ee 2.0 eee<br>4<br>1.5<br>3<br>PY ee | _<br>1.0<br>os 2 eae a<br>J av Z| =<br>4 ma<br>0.5<br>1<br>aT<br>0 0.0<br>| | | ULE<br>0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, r G=12 Ω , Dynamic test circuit in V GE =0/15V, I C =50A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
3.0 4.0<br>Eoff Eoff<br>Eon Eon<br>Ets 3.5 Ets<br>2.5 = -7 a/<br>£&A -— — £&A 3.0 e T | ft lelc<br>(op)7) 2.0 _ — icp)7) 7 L<br>e) _——-—T e) 2.5 2<br>aa] _— | Ye Za<br>-— “ Z<br>1.5 2.0<br>i i i“ oo<br>Oo Oo a a“<br>Zz Zz 1.5 ;<br>1.0<br>E F oe<br>1.0<br>5 5 Z |_|<br>i ee<br>0.5<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=0/15V, (inductive load, T vj =150°C, V GE=0/15V,<br>I C =50A, r G=12 , Dynamic test circuit in I C =50A, r G=12 , Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>130V Cies<br>14 Ell). 520V 7 / 1E+4 1 ©t CCoesres [_————a<br>/<br>a ee<br>Ss 12 a<br>a) 77/ 1000 p f |<br>kK<— 10 / / _Lejos —s a ——eee<br>fewv /. _—a a a aa<br>: ) Z PX<br>8<br>- (Se<br>100<br>iuE | 7 Oo————————\ —— ——<br>1 fo a a a<br>WwW 6 ~?oO a<br>° 4 TE<br>10<br>a ss<br>aa<br>2 aee ee ee<br>0 1<br>0 20 40 60 80 100 120 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=50A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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( V GE<br>**----- End of picture text -----**<br>
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1<br>a el<br>Se<br>= ee<br>=S Se———i CHi<br>D=0.5<br>0.2<br>rm HINTS Ul<br>2 || Ue 0.1 rill<br>: 0.1 eel<br>oa 7 0.05 Ht<br>S= Seea eeaa) 7 Aant | entll a |<br>7 ear / A? ee 0.02 rl<br><xz: PATeyAameall 0.01single pulse ipTM|<br>Al ae<br>0.01<br>ip) nn<br>2 Ee Re TH<br>© oe | -- fil<br>- a) Za ||<br>AD) Aa ce<br>TYA N LVI | ATI | ATI ELT TU<br>i: 1 2 3 4 5<br>ri[K/W]: 0.1587018 0.2383852 0.1347618 0.01158283 1.8E-3<br>| τ i[s]: 3.4E-4 2.8E-3 0.0136827 0.2164563 3.533918<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT ( _D_ = _t_ p/T)
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Datasheet
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IGB50N65H5
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## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
Datasheet
V�2.2 2018-01-11
IGB50N65H5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
12
V�2.2 2018-01-11
Datasheet
IGB50N65H5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Revision�History**
IGB50N65H5
## **Revision:�2018-01-11,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-05-19|Final data sheet|
|2.2|2018-01-11|Remove of Pb-free symbol and editorial changes.|
13
V�2.2 2018-01-11
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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