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IGB15N65S5ATMA1
IGBT, 35 A, 1.35 V, 105 W, 650 V, TO-263 (D2PAK), 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 105W
- Transistor Mounting: Surface Mount
- DC Collector Current: 35A
- Power Dissipation Pd: 105W
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 35A
- Collector Emitter Voltage Max: 650V
- Automotive Qualification Standard: -
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.35V
- Collector Emitter Saturation Voltage Vce(on): 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.487 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGB15N65S5 **==> picture [110 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> TRENCHSTOP [TM]<br>**----- End of picture text -----**<br> **==> picture [468 x 247] intentionally omitted <==** **----- Start of picture text -----**<br> Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>« Very Low V CEsat , 1.35V at nominal current<br>¢ Plug and play replacement of previous generation IGBTs<br>* 650V breakdown voltage G<br>* Low gate charge Q G E<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models: C<br>http://www.infineon.com/igbt/<br>Applications:<br>026<br>* Industrial SMPS oe<br>¢* WeldingIndustrial UPS a- : —<br>¢ Chargers f af<br>G<br>Product Validation: E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IGB15N65S5|650V|15A|1.35V|175°C|G15ES5|PG-TO263-3| Datasheet www.infineon.com 2017-05-19 IGB15N65S5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 2 V�2.1 2017-05-19 Datasheet IGB15N65S5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||35.0<br>23.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||60.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||105.0<br>52.5|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|1.40|K/W| |Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W| |Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.50<br>1.60|1.70<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1400|50<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|25.0|-|S| 3 V�2.1 2017-05-19 Datasheet IGB15N65S5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|930|-|pF| |Output capacitance|_C_oes||-|20|-|| |Reverse transfer capacitance|_C_res||-|4|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=15.0A,<br>_V_GE=15V|-|38.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=25.0Ω,_R_G(off)=25.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|12|-|ns| |Rise time|_t_r||-|14|-|ns| |Turn-off delaytime|_t_d(off)||-|117|-|ns| |Fall time|_t_f||-|30|-|ns| |Turn-on energy|_E_on||-|0.25|-|mJ| |Turn-off energy|_E_off||-|0.14|-|mJ| |Total switchingenergy|_E_ts||-|0.39|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=25.0Ω,_R_G(off)=25.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|11|-|ns| |Rise time|_t_r||-|8|-|ns| |Turn-off delaytime|_t_d(off)||-|130|-|ns| |Fall time|_t_f||-|32|-|ns| |Turn-on energy|_E_on||-|0.13|-|mJ| |Turn-off energy|_E_off||-|0.07|-|mJ| |Total switchingenergy|_E_ts||-|0.20|-|mJ| V�2.1 2017-05-19 Datasheet 4 IGB15N65S5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=25.0Ω,_R_G(off)=25.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|12|-|ns| |Rise time|_t_r||-|15|-|ns| |Turn-off delaytime|_t_d(off)||-|140|-|ns| |Fall time|_t_f||-|47|-|ns| |Turn-on energy|_E_on||-|0.32|-|mJ| |Turn-off energy|_E_off||-|0.21|-|mJ| |Total switchingenergy|_E_ts||-|0.53|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=25.0Ω,_R_G(off)=25.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|11|-|ns| |Rise time|_t_r||-|9|-|ns| |Turn-off delaytime|_t_d(off)||-|155|-|ns| |Fall time|_t_f||-|53|-|ns| |Turn-on energy|_E_on||-|0.18|-|mJ| |Turn-off energy|_E_off||-|0.11|-|mJ| |Total switchingenergy|_E_ts||-|0.29|-|mJ| V�2.1 2017-05-19 Datasheet 5 IGB15N65S5 **==> picture [474 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 110 40<br>100 es<br>35<br>90<br>30<br>80<br>~EXPCCT, EX<br>PP 70 oN Tye 25 ELK<br>60<br>Ne ee<br>20<br>50<br>Ppa SEN<br>re 40 ee: 15 N<br>2 30 ee ee<br>10<br>20<br>jp tin 5 PPP<br>ee<br>10<br>0 Sa 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>60 60<br>VGE=20V VGE=20V<br>18V 18V<br>= eae. a<br>50 16V 50 16V<br>14V 14V<br>40 A 12V 40 12V Se<br>10V 10V<br>e @ ]<br>8V 8V<br>30 30<br>7V 7V<br>6V 6V<br>20 20<br>10 10<br>fa pp<br>eT)<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br> 6 Datasheet 2017-05-19 IGB15N65S5 **==> picture [249 x 313] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>Tj=25°C<br>( Tj=150°C re<br>50 yo afs/<br>Sf e eee llZzZz<br>40<br>Pa yy rE<br>Ww // <x®<br>&<br>©<br>a 30 EeE<br>Ww oc<br>20<br>aeee./ 9<br>10<br>0<br>4 5 6 7 8 9 10<br>V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical transfer characteristic<br>( V CE=20V)<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br> **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>IC=3A<br>IC=7.5A<br>IC=15A<br>2.5 IC=30A<br>llZzZz<br>2.0<br>rE<br><x®<br>EEeE 1.5<br>oc<br>1.0<br>9<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 6. ( _V_ GE=15V) **==> picture [471 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aa 1000<br>| 1 td(off) a aee ee ee |1 td(off) a a ee ee es<br>I tf p o | tf aee<br>td(on) td(on)<br>tr tr<br>F he Ff<br>| a ee ee ee ee | i eeeee<br>a ee ee r e<br>z= 100 r a eseSeee ee = 100 e aJa eeeees<br>ip) po ip) po<br>uw a a (OT a a<br>= poo et = poo<br>- a a rl ee ee ee a ee i ee le ee<br>Q eeee ee a a ee ee eeeee<br>oa a ee eee<br>EPeean E ce ee Loa- ~<br>2)° 10 aa a =|] 2)—° 10 eSa caa SSTrese<br>poa a sses es<br>po a a a<br>a po<br>es ee aeeee<br>a P| tT tT<br>1 1<br>0 10 20 30 40 50 60 5 15 25 35 45 55 65 75<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br> Figure 7. **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> **==> picture [151 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G=25 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> Figure 8. Typical **resistor** **==> picture [187 x 31] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, I C =15A, Dynamic test<br>7 Figure E)<br>**----- End of picture text -----**<br> 2017-05-19 IGB15N65S5 **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 6.0<br>1 H td(off) a a a |— typ. |<br>I tf 5.5<br>I td(on) a eeee ee ee eee _<br>tr<br>| a a ee ee ee W<br>5.0<br>a ee ee Kk<br>4.5<br>2 100 Eo Ty | | | | 2<br>— se i<br>ip) po (e)<br>im a a a 4.0<br>= a a A LL<br>F a ee ee ee ee eee Wy<br>3.5<br>OQ pee —| —<br><=2 - ee<br>3.0<br>ee<br>10<br>SS 7 a eee<br>p o Ww 2.5<br>ee<br>a eseo) 2.0<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 9. (inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =15A, _R_ G=25 , Dynamic test circuit Figure E) Figure 10. ( _I_ C=0.15mA) **==> picture [471 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5 0.8<br>Eoff Eoff<br>Eon Eon<br>Ets 0.7 Ets<br>3.0<br>a / a“<br>£ // £a 0.6 TT | ziea |<br>2.5<br>Lu / Lu pea<br>7) y 7) on<br>2 / Q oo<br>0.5<br>_ y _ ao _<br>> 2.0<br>a<br>Wi / a 0.4 _<br>, y Ww<br>g 1.5 7 () 0.3 =<br>L / Y ZzL =<ia<br>1.0<br>: i eae ee<br>0.2<br>7“ 7 a<br>0.5<br>0.1<br>| a EE<br>0.0 0.0<br>0 10 20 30 40 50 60 5 15 25 35 45 55 65 75<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G=25 Ω , Dynamic test circuit in V GE =0/15V, I C =15A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 8 2017-05-19 IGB15N65S5 **==> picture [474 x 341] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7 0.8<br>Eoff Eoff<br>Eon Eon<br>Ets 0.7 Ets<br>0.6<br>5 eae 5 7<br>0.6<br>Ww 0.5 =- Ww Y<br>7) Loo 7) L<br>2) a7 o ’<br>0.5<br>a U47 a “<br>& 0.4 = & a 7<br>Ww _ Ww 0.4 L<br>Zz - Zz a 4<br>Ww bE Ww “ 7<br>0.3<br>0.3<br>I — x= “<br>:O 0.2 eT | _ oO: oo 2 : |<br>0.2<br>sf <5 Ea<br>0.1<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=0/15V, (inductive load, T vj =150°C, V GE=0/15V,<br>I C =15A, R G=25 , Dynamic test circuit in I C =15A, R G=25 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [230 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>130V<br>520V<br>|<br>14<br>a//<br>S— 12 // /<br>3) /<br>< J 7<br>F 10<br>:<br>iw /<br>bu 8 /<br>FE=<br>=<br>6<br>i<br>< /<br>. /<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35 40<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br> **==> picture [293 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> Cies<br>Coes<br>|<br>Cres<br>a// 1000 aI= - -+ +4+—<br>/ en a——————a<br>Ca ee es es<br>a ee<br>re |<br>2<br>Lu \<br>100<br>Bo<br>2 Ee<br>Ooi EsFass<br>x pNP<br>a.Sra ee ee ee eee<br>° 10 |EEPf ft<br>Po<br>a as<br>a es lt ee<br>ee ee ee ee ee ee<br>1<br>35 40 0 5 10 15 20 25 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>**----- End of picture text -----**<br> Figure 15. Typical ( _I_ C=15A) **==> picture [61 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 16.<br>( V GE<br>**----- End of picture text -----**<br> 9 Datasheet 2017-05-19 IGB15N65S5 **==> picture [235 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 1 A<br>_ EE<br>= Seat<br>YQ 2A<br>D=0.5<br>7 PT ea TAT TTA<br>O IN ZA TTT<br>gOWI iy 0.20.1<br>3 0.1 ee NU 0.05<br>a! eat 0.02 Tt<br>~¢ Se ee<br>S CT AA ee 0.01 CUT CTT TT<br>Y bee ea single pulse CoC<br>Ww pe 0<br>F a ee TT TIN ETT TTT<br>aie<br>az 0.01 | al<br>2 Se ee ae<br>o PTH -- Ti<br>r. PVTAC CATT TTIE Tc ie, otters (IIl<br>PAL ET IE oot toot ooo<br>Y | (IE i: 1 TT 2 TTT 3 TEM 4 TTI 5 Tt<br>ri[K/W]: 0.04985429 0.5717284 0.6247318 0.1199425 0.01874488<br>τ i[s]: 4.7E-5 4.8E-4 3.4E-3 0.02214203 0.1932798<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> > Figure 17. IGBT ( _D_ = _t_ p/T) 10 Datasheet 2017-05-19 IGB15N65S5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Package Drawing PG-TO263-3** **==> picture [112 x 124] intentionally omitted <==** **==> picture [43 x 105] intentionally omitted <==** **==> picture [140 x 91] intentionally omitted <==** |||MIN|MAX|MIN|MAX| |---|---|---|---|---|---| |||4.30|4.57|0.169|0.180| |||0.00<br>|0.25<br>|0.000<br>|0.010<br>| |||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045| |||0.33<br>|0.65<br>|0.013<br>|0.026<br>| |||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055| |||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406| |||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100|| |||5.08||0.200|| |||2||2|| |||14.61|15.88|0.575|0.625| |||2.29|3.00|0.090|0.118| |||0.70|1.60|0.028|0.063| |||1.00|1.78|0.039|0.070| |||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374| |||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>| |||10.70<br>|10.90<br>|0.421<br>|0.429| |||3.65|3.85|0.144|0.152| |||1.25|1.45|0.049|0.057| |atasheet|||||| Datasheet V�2.1 2017-05-19 IGB15N65S5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 12 V�2.1 2017-05-19 Datasheet IGB15N65S5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Revision�History** IGB15N65S5 ## **Revision:�2017-05-19,�Rev.�2.1** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2017-05-19|Final data sheet| 13 V�2.1 2017-05-19 Datasheet ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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