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IGB15N120S7ATMA1
IGBT, 34 A, 1.65 V, 141 W, 1.2 kV, TO-263, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT 7 Series
- Power Dissipation: 141W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263
- Operating Temperature Max: 150°C
- Continuous Collector Current: 34A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.24 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** ## **Final datasheet** ## **Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** ## **Features** - VCE = 1200 V - IC = 15 A - Low saturation voltage VCEsat = 2 V at Tvj = 150°C - Short circuit ruggedness 8 µs - Wide range of dv/dt controllability - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ TAB 1 2 Ww ## **Potential applications** - Industrial drives ## **Product validation** - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 - Encapsulation for the application required ## **Description** Package pin definition: - Pin 1 (G) - gate - Pin 2 (E) - emitter - TAB (C) - collector **==> picture [60 x 75] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> **Type Package Marking** IGB15N120S7 PG-TO263-3-STD-C1.6 G15MS7 ~~re~~ Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2024-03-11 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**4**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |**5**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| Datasheet Revision 1.00 2024-03-11 2 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Internal emitter<br>inductance measured 5<br>mm (0.197 in.) from case|_L_E||||7||nH| |Storage temperature|_T_stg|||-55||150|°C| |Soldering temperature|_T_sold|reflow soldering (MSL1 according to JEDEC<br>J-STA-020)||||260|°C| |Thermal resistance, 6 cm2<br>Cu on PCB junction to<br>ambient|_R_th(j-a)|||||40|K/W| |IGBT thermal resistance,<br>junction-case|_R_th(j-c)||||0.66|0.89|K/W| |**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**|||| |---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||1200|V| |DC collector current,<br>limited by Tvjmax|_I_C||_T_c= 25 °C|34_1)_|A| ||||_T_c= 100 °C|22|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpulse|||45|A| |Turn-of safe operating<br>area||_V_CE≤ 1200 V,_T_vj≤ 150 °C||45|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p≤ 0.5 µs,_D_< 0.001||±25|V| |Short-circuit withstand<br>time|_t_SC|_V_CC≤ 600 V,_V_GE= 15 V, Allowed number of<br>short circuits < 1000, Time between short<br>circuits ≥ 1.0 s,_T_vj= 150 °C||8|µs| |Power dissipation|_P_tot||_T_c= 25 °C|141|W| ||||_T_c= 100 °C|56|| |_1)_<br>Limited by bondwire|||||| Datasheet Revision 1.00 2024-03-11 3 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CEsat|_I_C= 15 A,_V_GE= 15 V|_T_vj= 25 °C||1.65|2|V| ||||_T_vj= 150 °C||2||| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 0.3 mA, VCE= VGE||5.15|5.7|6.45|V| |Zero gate-voltage collector<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||20|µA| ||||_T_vj= 150 °C||260||| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 15 A,_V_CE= 20 V,_T_vj= 150 °C|||6.7||S| |Short-circuit collector<br>current|_I_SC|_V_CC≤ 600 V,_V_GE= 15 V,_t_SC≤ 8 µs, Allowed<br>number of short circuits < 1000, Time<br>between short circuits ≥ 1.0 s,_T_vj= 150 °C|||72||A| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||2.5||nF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||41||pF| |Reverse transfer<br>capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||27||pF| |Gate charge|_Q_G|_V_CC= 960 V,_I_C= 15 A,_V_GE=|15 V||97||nC| |Turn-on delay time|_t_d(on)|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 15 A||16||ns| ||||_T_vj= 150 °C,<br>_I_C= 15 A||16||| |Rise time (inductive load)|_t_r|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 15 A||17||ns| ||||_T_vj= 150 °C,<br>_I_C= 15 A||19||| |Turn-of delay time|_t_d(of)|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 15 A||156||ns| ||||_T_vj= 150 °C,<br>_I_C= 15 A||223||| |Fall time (inductive load)|_t_f|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 15 A||111||ns| ||||_T_vj= 150 °C,<br>_I_C= 15 A||216||| |Turn-on energy|_E_on|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 15 A||0.9||mJ| ||||_T_vj= 150 °C,<br>_I_C= 15 A||1.3||| ## **(table continues...)** Datasheet Revision 1.00 2024-03-11 4 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of energy|_E_of|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 15 A||0.68||mJ| ||||_T_vj= 150 °C,<br>_I_C= 15 A||1.3||| |Total switching energy|_E_ts|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 15 A||1.58||mJ| ||||_T_vj= 150 °C,<br>_I_C= 15 A||2.63||| |Operating junction<br>temperature|_T_vj|||-40||150|°C| _**Note** : For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ _Electrical Characteristic at T_ vj _= 25°C, unless otherwise specified._ _Dynamic test circuit, parasitic inductance L_ σ _= 45 nH, parasitic capacitor C_ σ _= 25 pF from Fig. E. Energy losses include “tail” and diode (IKW15N120CS7) reverse recovery._ Datasheet Revision 1.00 2024-03-11 5 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **3 Characteristics diagrams** ## **3 Characteristics diagrams** **==> picture [540 x 634] intentionally omitted <==** **----- Start of picture text -----**<br> Typical output characteristic Typical output characteristic<br>IC = f(VCE) IC = f(VCE)<br>T = 25 °C T = 150 °C<br>vj vj<br>45 45<br>40 40<br>35 35<br>30 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>Typical transfer characteristic Typical collector-emitter saturation voltage as a<br>IC = f(VGE) function of junction temperature<br>VCE = 20 V VCEsat = f(Tvj)<br>VGE = 15 V<br>45 4.0<br>40 3.5<br>35<br>3.0<br>30<br>2.5<br>25<br>2.0<br>20<br>1.5<br>15<br>1.0<br>10<br>0.5<br>5<br>0 0.0<br>4 5 6 7 8 9 10 11 12 13 14 15 -50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-03-11 6 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **3 Characteristics diagrams** ## **Gate-emitter threshold voltage as a function of junction temperature** VGEth = f(Tvj) IC = 0.3 mA **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>6<br>5<br>4<br>3<br>2<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of gate resistor** t = f(RG) IC = 15 A, VCC = 600 V, Tvj = 150 °C, VGE = 0/15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> **Typical switching times as a function of collector current** t = f(IC) VCC = 600 V, Tvj = 150 °C, VGE = 0/15 V, RG = 10 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of junction temperature** t = f(Tvj) IC = 15 A, VCC = 600 V, VGE = 0/15 V, RG = 10 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-03-11 7 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **3 Characteristics diagrams** ## **Typical switching energy losses as a function of collector current** ## E = f(IC) **Typical switching energy losses as a function of gate resistor** E = f(RG) **==> picture [540 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> VCC = 600 V, Tvj = 150 °C, VGE = 0/15 V, RG = 10 Ω IC = 15 A, VCC = 600 V, Tvj = 150 °C, VGE = 0/15 V<br>6 4.5<br>4.0<br>5<br>3.5<br>4 3.0<br>2.5<br>3<br>2.0<br>2 1.5<br>1.0<br>1<br>0.5<br>0 0.0<br>0 5 10 15 20 25 30 10 20 30 40 50 60 70 80<br>Typical switching energy losses as a function of Typical switching energy losses as a function of<br>junction temperature collector emitter voltage<br>E = f(Tvj) E = f(VCE)<br>IC = 15 A, VCC = 600 V, VGE = 0/15 V, RG = 10 Ω IC = 15 A, Tvj = 150 °C, VGE = 0/15 V, RG = 10 Ω<br>3.0 4.0<br>3.5<br>2.5<br>3.0<br>2.0<br>2.5<br>1.5 2.0<br>1.5<br>1.0<br>1.0<br>0.5<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 400 450 500 550 600 650 700 750 800<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-03-11 8 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **3 Characteristics diagrams** ## **Typical gate charge** VGE = f(QG) ## IC = 15 A ## **Typical capacitance as a function of collector-emitter voltage** **==> picture [42 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> C = f(VCE)<br>**----- End of picture text -----**<br> f = 100 kHz, VGE = 0 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> ## **Typical short circuit collector current as a function of gate-emitter voltage** IC(SC) = f(VGE) Tvj = 150 °C, VCC = 600 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>80<br>60<br>40<br>20<br>0<br>12.0 12.5 13.0 13.5 14.0 14.5 15.0<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> ## **Short circuit withstand time as a function of gateemitter voltage** tSC = f(VGE) Tvj = 150 °C, VCC = 600 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>10<br>8<br>6<br>4<br>2<br>12 13 14 15 16 17<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-03-11 9 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **3 Characteristics diagrams** ## **IGBT transient thermal impedance as a function of pulse width** **==> picture [540 x 291] intentionally omitted <==** **----- Start of picture text -----**<br> Zth(j-c) = f(tp)<br>D = tp/T<br>1<br>0.1<br>0.01<br>0.001<br>0.0001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-03-11 10 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **4 Package outlines** **4 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **PG-TO263-3-STD-C1.6** **==> picture [42 x 54] intentionally omitted <==** **==> picture [31 x 47] intentionally omitted <==** **Figure 1** Datasheet Revision 1.00 2024-03-11 11 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** **5 Testing conditions** ## **5 Testing conditions** **==> picture [502 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V C C<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.00 2024-03-11 12 **IGB15N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |1.00|2024-03-11|Final datasheet| Datasheet Revision 1.00 2024-03-11 13 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2024-03-11 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2024 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABJ882-001** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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