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IGA03N120H2XKSA1
IGBT, 3 A, 2.8 V, 29 W, 1.2 kV, TO-220, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:3A; Collector Emitter Saturation Voltage Vce(on):2.8V; Power Dissipation Pd:29W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-220; No. of Pins:3Pins; Operat
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 29W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 150°C
- Continuous Collector Current: 3A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.8V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.789 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGA03N120H2 ## HighSpeed 2-Technology - **Designed for:** - TV – Horizontal Line Deflection - **2[nd] generation HighSpeed-Technology for 1200V applications offers:** - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - _E_ off optimized for _I_ C =3A - simple Gate-Control - Qualified according to JEDEC[1] for target applications **==> picture [138 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>PG-TO220-3-34<br>(FullPAK)<br>PG-TO220-3-31<br>(FullPAK)<br>**----- End of picture text -----**<br> - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ |**Type**|**_V_CE**|**_I_C**|**_E_off**|**_T_j,max**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IGA03N120H2|1200V|3A|0.15mJ|150°C|G03H1202|PG-TO-220-3-31| |IGA03N120H2|1200V|3A|0.15mJ|150°C|G03H1202|PG-TO-220-3-34| ## **Maximum Ratings** |**Parameter**|**Symbol**<br>~~—-—~~|**Value**<br>~~—-—~~|**Unit**<br>~~—-—~~| |---|---|---|---| |Collector-emitter voltage<br>~~|~~|_V_C E<br>~~—-—~~<br>~~|~~<br>~~|~~|1200<br>~~—-—~~|V<br>~~—-—~~| |Triangular collector peak current (_V_GS= 15V)<br>_T_C= 100°C,_f_= 32kHz<br>~~|~~|_I_Cp k<br>~~|~~<br>~~|~~|8.2|A| |Pulsed collector current,_t_plimited by _T_jmax<br>~~|~~|_I_Cp ul s<br>~~|~~<br>~~|~~<br>~~_|~~|9<br>~~|~~|| |Turn off safe operating area<br>_V_CE≤1200V,_T_j ≤150°C<br>~~|~~|_-_<br>~~|~~<br>~~|~~<br>~~_|~~|9<br>~~|~~|| |Gate-emitter voltage<br>~~|~~|_V_G E<br>~~_|~~<br>~~|~~<br>~~|~~|±20<br>~~|~~|V| |Power dissipation<br>_T_C= 25°C<br>~~|~~|_P_t ot<br>~~_ |~~<br>~~|~~<br>~~|~~|29<br>~~|~~|W| |Operating junction and storage temperature<br>~~|~~|_T_j,_T_stg<br>~~|~~<br>~~|~~<br>~~———~~|-40...+150<br>~~———~~|°C| |Solderingtemperature, 1.6mm(0.063 in.)from case for 10s<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~———~~|260<br>~~———~~|| |Isolation Voltage|_V_i sol<br>~~|~~|2500<br>~~|~~|Vrm s| 1 J-STD-020 and JESD-022 Rev. 2.2 July 06 Power Semiconductors IGA03N120H2 ## **Thermal Resistance** |**Thermal Resistance**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**| |**Characteristic**||||| |IGBT thermal resistance,<br>junction – case|_R_t hJC||4.3|K/W| |Thermal resistance,<br>junction – ambient|_R_t hJA||64|| ## **Electrical Characteristic,** at _T_ j = 25 °C, unless otherwise specified |**Electrical Characteristic,**at_T_j= 25°|C, unless ot|herwise specified|herwise specified||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|||**Value**||**Unit**| |||||**min.**|**Typ.**|**max.**|| |**Static Characteristic**|||||||| |Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V,_I_C=300µA||1200|-|-|V| |Collector-emitter saturation voltage|_V_C E( sat )|_V_G E= 15V,_I_C=3A<br>_T_j=25°C<br>_T_j=150°C<br>_V_G E= 10V,_I_C=3A,<br>_T_j=25°C||-<br>-<br>-|2.2<br>2.5<br>2.4|2.8<br>-<br>-|| |Gate-emitter threshold voltage|_V_G E( t h)|_I_C=90µA,_V_C E=_V_G E||2.1|3|3.9|| |Zero gate voltage collector current|_I_CE S|_V_C E=1200V,_V_G E=0V<br>_T_j=25°C<br>_T_j=150°C||-<br>-|-<br>-|20<br>80|µA| |Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V||-|-|100|nA| |Transconductance|_g_fs|_V_C E=20V,_I_C=3A||-|2|-|S| |**Dynamic Characteristic**|||||||| |Input capacitance|_C_i ss|_V_C E=25V<br>_V_G E=0V<br>_f_=1MHz||-|205|-|pF| |Output capacitance|_C_os s|||-|24|-|| |Reverse transfer capacitance|_C_rs s|||-|7|-|| |Gate charge|_Q_Gat e|_V_C C=960V,_I_C=3A<br>_V_G E=15V||-|8.6|-|nC| |Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E|||-|7|-|nH| 2 Rev. 2.2 July 06 Power Semiconductors IGA03N120H2 ## **Switching Characteristic, Inductive Load,** at _T_ j=25 °C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**Typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=25°C<br>_V_C C=800V,_I_C=3A<br>_V_G E=0V/15V<br>_R_G=82Ω<br>Lσ<br>2)=180nH<br>Cσ<br>1)=40pF<br>Energy losses include<br>“tail” and diode2)<br>reverse recovery.|-|9.2|-|ns| |Rise time|_t_r||-|5.2|-|| |Turn-off delaytime|_t_d( of f)||-|281|-|| |Fall time|_t_f||-|29|-|| |Turn-on energy|_E_o n||-|0.14|-|mJ| |Turn-off energy|_E_o ff||-|0.15|-|| |Total switching energy|_E_t s||-|0.29|-|| ## **Switching Characteristic, Inductive Load,** at _T_ j=150 °C |**Switching Characteristic, Inductive**|**Load,**at_T_j|=150°C||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| ||||**min.**|**Typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=150°C<br>_V_C C=800V,_I_C=3A<br>_V_G E=0V/15V<br>_R_G=82Ω<br>Lσ<br>1 )=180nH<br>Cσ<br>1)=40pF<br>Energy losses include<br>“tail” and diode3)<br>reverse recovery.|-|9.4|-|ns| |Rise time|_t_r||-|6.7|-|| |Turn-off delaytime|_t_d( of f)||-|340|-|| |Fall time|_t_f||-|63|-|| |Turn-on energy|_E_o n||-|0.22|-|mJ| |Turn-off energy|_E_o ff||-|0.26|-|| |Total switching energy|_E_t s||-|0.48|-|| ## **Switching Energy ZVT, Inductive Load** |**Parameter**|**Symbol**|**Conditions**|**Value**|**Value**|**Value**|**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-off energy|_E_o ff|_V_C C=800V,_I_C=3A<br>_V_G E=0V/15V<br>_R_G=82Ω, Cr<br>1)=4nF<br>_T_j=25°C<br>_T_j=150°C|-<br>-|0.05<br>0.09|-<br>-|mJ| > 2 ) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 3 ) Commutation diode from device IKP03N120H2 3 Rev. 2.2 July 06 Power Semiconductors IGA03N120H2 **==> picture [474 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> 12A<br>Ic 10A t p =10µs<br>10A<br>20µs<br>8A 50µs<br>1A<br>100µs<br>6A T C=25°C<br>1ms<br>4A T C=100°C<br>0,1A 100ms<br>2A Ic<br>DC<br>0A<br>0,01A<br>10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V<br>f , SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>, ,<br>I C I C<br>**----- End of picture text -----**<br> **Figure 1. Collector current as a function of** **switching frequency** **Figure 2. Safe operating area** **==> picture [134 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> ( D = 0, T C = 25°C, T j ≤ 150°C)<br>**----- End of picture text -----**<br> ( _T_ j ≤ 150°C, _D =_ 0.5, _V_ CE = 800V, _V_ GE = +15V/0V, _R_ G = 82Ω) **==> picture [233 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> 30W<br>20W<br>10W<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C<br>T C, CASE TEMPERATURE<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br> **Figure 3. Power dissipation as a function of case temperature** ( _T_ j ≤ 150°C) **==> picture [232 x 223] intentionally omitted <==** **----- Start of picture text -----**<br> 8A<br>6A<br>4A<br>2A<br>0A<br>25°C 50°C 75°C 100°C 125°C 150°C<br>T C, CASE TEMPERATURE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 4. Collector current as a function of case temperature** ( _V_ GE ≤ 15V, _T_ j ≤ 150°C) Rev. 2.2 July 06 4 Power Semiconductors IGA03N120H2 **==> picture [234 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> 10A<br>8A<br>V GE=15V<br>12V<br>6A<br>10V<br> 8V<br> 6V<br>4A<br>2A<br>0A<br>0V 1V 2V 3V 4V 5V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 5. Typical output characteristics** ( _T_ j = 25°C) **==> picture [217 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 12A<br>10A<br>8A T =+150°C<br>j<br>T =+25°C<br>6A j<br>4A<br>2A<br>0A<br>3V 5V 7V 9V<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> _V_ GE, GATE-EMITTER VOLTAGE **Figure 7. Typical transfer characteristics** ( _V_ CE = 20V) **==> picture [227 x 516] intentionally omitted <==** **----- Start of picture text -----**<br> 10A<br>8A<br>V GE=15V<br>12V<br>6A<br>10V<br> 8V<br>4A 6V<br>2A<br>0A<br>0V 1V 2V 3V 4V 5V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 6. Typical output characteristics<br>( T j = 150°C)<br>3V<br>IC=6A<br>IC=3A<br>2V<br>IC=1.5A<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>COLLECTOR CURRENT<br>,<br>I C<br>EMITTER SATURATION VOLTAGE<br>-<br>COLLECTOR<br>,<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> _T_ j, JUNCTION TEMPERATURE **Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) Rev. 2.2 July 06 5 Power Semiconductors IGA03N120H2 **==> picture [217 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 1000ns<br>t<br>d(off)<br>100ns t f<br>t<br>10ns d(on)<br>t r<br>1ns<br>0A 2A 4A<br>SWITCHING TIMES<br>t ,<br>**----- End of picture text -----**<br> _I_ C, COLLECTOR CURRENT **Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ j = 150°C, _V_ CE = 800V, _V_ GE = +15V/0V, _R_ G = 82Ω, dynamic test circuit in Fig.E) **==> picture [216 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 1000ns<br>t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>10ns<br>t r<br>1ns<br>25°C 50°C 75°C 100°C 125°C 150°C<br>SWITCHING TIMES<br>t ,<br>**----- End of picture text -----**<br> _T_ j, JUNCTION TEMPERATURE **Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE = 800V, _V_ GE = +15V/0V, _I_ C = 3A, _R_ G = 82Ω, dynamic test circuit in Fig.E) **==> picture [218 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 1000ns<br>t<br>d(off)<br>100ns<br>t f<br>t<br>10ns d(on)<br>t r<br>1ns<br>0Ω 50Ω 100Ω 150Ω<br>SWITCHING TIMES<br>t ,<br>**----- End of picture text -----**<br> _R_ G, GATE RESISTOR **Figure 10. Typical switching times as a** **function of gate resistor** (inductive load, _T_ j = 150°C, _V_ CE = 800V, _V_ GE = +15V/0V, _I_ C = 3A, dynamic test circuit in Fig.E) **==> picture [219 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 5V<br>4V<br>3V max.<br>typ.<br>2V<br>min.<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>EMITTER THRESHOLD VOLTAGE<br>-<br>GATE<br>,<br>GE(th)<br>V<br>**----- End of picture text -----**<br> _T_ j, JUNCTION TEMPERATURE **Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 0.09mA) 6 Rev. 2.2 July 06 Power Semiconductors IGA03N120H2 **==> picture [217 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0mJ<br>1due to diode recovery. ) E on and E ts include losses E ts1<br>E<br>off<br>0.5mJ<br>E 1<br>on<br>0.0mJ<br>0A 2A 4A<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> _I_ C, COLLECTOR CURRENT **Figure 13. Typical switching energy losses** **as a function of collector current** (inductive load, _T_ j = 150°C, _V_ CE = 800V, _V_ GE = +15V/0V, _R_ G = 82Ω, dynamic test circuit in Fig.E ) **==> picture [217 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5mJ<br>1<br>due to diode recovery. ) E on and E ts include losses E ts1<br>0.4mJ<br>0.3mJ<br>E<br>off<br>0.2mJ E on1<br>0.1mJ<br>25°C 80°C 125°C 150°C<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> _T_ j, JUNCTION TEMPERATURE **Figure 15. Typical switching energy losses as a function of junction temperature** (inductive load, _V_ CE = 800V, _V_ GE = +15V/0V, _I_ C = 3A, _R_ G = 82Ω, dynamic test circuit in Fig.E ) **==> picture [218 x 526] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7mJ 1due to diode recovery. ) E on and E ts include losses E ts1<br>0.6mJ<br>0.5mJ<br>0.4mJ<br>0.3mJ<br>E<br>off<br>E 1<br>0.2mJ on<br>0Ω 50Ω 100Ω 150Ω 200Ω 250Ω<br>R G, GATE RESISTOR<br>Figure 14. Typical switching energy losses<br>as a function of gate resistor<br>(inductive load, T j = 150°C,<br>V CE = 800V, V GE = +15V/0V, I C = 3A,<br>dynamic test circuit in Fig.E )<br>0.16mJ I C=3A, T J=150°C<br>0.12mJ<br>I C=3A, T J=25°C<br>0.08mJ<br>I C=1A, T J=150°C<br>0.04mJ<br>I C=1A, T J=25°C<br>0.00mJ<br>0V/us 1000V/us 2000V/us 3000V/us<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>TURN OFF SWITCHING ENERGY LOSS<br>,<br>off<br>E<br>**----- End of picture text -----**<br> ## **Figure 14. Typical switching energy losses as a function of gate resistor** _dv/dt_ , VOLTAGE SLOPE **Figure 16. Typical turn off switching energy loss for soft switching** ( _dynamic test circuit in Fig. E_ ) Rev. 2.2 July 06 7 Power Semiconductors IGA03N120H2 **==> picture [232 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> 1nF<br>C iss<br>100pF<br>C oss<br>10pF C rss<br>0V 10V 20V 30V<br>CAPACITANCE<br>,<br>C<br>**----- End of picture text -----**<br> _V_ CE, COLLECTOR-EMITTER VOLTAGE **Figure 19. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE = 0V, _f_ = 1MHz) **==> picture [219 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 20V<br>15V U =240V<br>CE<br>10V<br>U =960V<br>CE<br>5V<br>0V<br>0nC 10nC 20nC 30nC<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br> _Q_ GE, GATE CHARGE **Figure 18. Typical gate charge** ( _I_ C = 3A) **==> picture [218 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> 101K/W<br>D =0.5 0.1 0.2<br>100K/W<br>R , ( K / W ) τ , ( s )<br>1,4285 5,2404<br>1,8838 1,7688<br>0,4057 0,07592<br>0.05<br>10-1K/W 0,4234 0,005018<br>0.02 0,3241 0,000595<br>0,1021 0,000126<br>0.01 0,1340 0,000018<br>R 1 R 2<br>10-2K/W<br>single pulse<br>C 1=τ1/ R 1 C 2=τ2/ R 2<br>1µs 10µs 100µs 1ms 10ms100ms 1s 10s<br>t P, PULSE WIDTH<br>TRANSIENT THERMAL RESISTANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br> **Figure 17. IGBT transient thermal impedance as a function of pulse width** ( _D_ = _t_ P/ _T_ ) 8 Rev. 2.2 July 06 Power Semiconductors IGA03N120H2 ## **PG-TO-220-3-31 (FullPAK)** **==> picture [86 x 144] intentionally omitted <==** |**symbol**|**dimensions**|**dimensions**|**dimensions**|**dimensions**| |---|---|---|---|---| ||[mm]||[inch]|| ||min|max|min|max| |A|10.37|10.63|<br>0.4084|<br>0.4184| |B|15.86|16.12|<br>0.6245|<br>0.6345| |C|0.65|0.78|0.0256|<br>0.0306| |D|2.95 typ.||0.1160 typ.|| |E|3.15|3.25|0.124|0.128| |F|6.05|6.56|0.2384|<br>0.2584| |G|13.47|13.73|<br>0.5304|<br>0.5404| |H|3.18|3.43|0.125|0.135| |K|0.45|0.63|0.0177|<br>0.0247| |L|1.23|1.36|0.0484|<br>0.0534| |M|2.54 typ.||0.100 typ.|| |N|4.57|4.83|0.1800|<br>0.1900| |P|2.57|2.83|0.1013|<br>0.1113| |T|2.51|2.62|0.0990|<br>0.1030| 9 Rev. 2.2 July 06 Power Semiconductors IGA03N120H2 ## **Edition 2006-01** ## **Published by Infineon Technologies AG 81726 München, Germany** ## **© Infineon Technologies AG 12/14/06. All Rights Reserved.** ## **Attention please!** The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( **www.infineon.com** ). ## **Warnings** Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 Rev. 2.2 July 06 Power Semiconductors
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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