![IFS100B12N3E4PB11BPSA1 — IGBT Module, Six Pack [Full Bridge], 150 A, 2.1 V, 515 W, 150 °C, Module](/media/8/2/A/86B01967D4DF0A28.webp)
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IFS100B12N3E4PB11BPSA1
IGBT Module, Six Pack [Full Bridge], 150 A, 2.1 V, 515 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 515W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.1V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 77.21 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT-Modul IGBT-Module
## IFS100B12N3E4P_B11
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VCES = 1200V<br>IC nom = 100A / ICRM = 200A<br>**----- End of picture text -----**<br>
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## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module IFS100B12N3E4P_B11
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## **Vorläufige�Daten Preliminary�Data**
**IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>IFS100B12N3E4P_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:NK<br>approvedby:RS<br>dateofpublication:2015-01-26<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>100<br>150<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>515<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,25<br>5,80<br>6,35<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,75<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,20<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,35<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,16<br>0,17<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,025<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,37<br>0,45<br>0,48<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,06<br>0,11<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 3600 A/µs (Tvj= 150°C)<br>RGon= 1,6Ω<br>Eon<br>4,00<br>6,50<br>7,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 3400 V/µs (Tvj= 150°C)<br>RGoff= 1,6Ω<br>Eoff<br>7,60<br>11,0<br>12,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,29<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial<br>RthCH<br>0,046 K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module IFS100B12N3E4P_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1550<br>1500|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||150<br>160<br>165||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||9,60<br>17,0<br>19,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||4,10<br>7,00<br>8,00||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,49|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthCH|||0,069|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|**Strommesswiderstand/Shunt**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|Tc= 20°C|R20||1,50||mΩ|
|Temperaturkoeffizient<br>Temperaturecoefficient(tcr)|20°C - 60°C|||< 30||ppm/K|
|BetriebstemperaturShunt-Widerstand<br>Operationtemperatureshunt-resistor||Ttvjop|||200|°C|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance;junktiontocase||RthJC|||8,7|K/W|
prepared�by:�NK date�of�publication:�2015-01-26 approved�by:�RS revision:�2.0
3
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module IFS100B12N3E4P_B11
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## **Vorläufige�Daten Preliminary�Data**
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||AI203||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||3,20||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Gewicht<br>Weight||G||300||g|
Lagerung und Transport von Modulen mit TIM => siehe AN Storage and shipment of modules with TIM => see AN
prepared�by:�NK date�of�publication:�2015-01-26 approved�by:�RS revision:�2.0
4
## IGBT-Modul IGBT-Module IFS100B12N3E4P_B11
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>200 a | , 7 200 es<br>Tvj = 25°C VGE = 19V<br>180 F Tvj = 125°C e 180 | VGE = 17V | inne<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>160 ree e e 160 | VGE = 11V LAAT<br>VGE = 9V<br>ee |<br>140 140<br>Se?/ JS / _.<br>120 120<br>eee eee eae<br>Sea eee eee<br>100 100<br>7, -f |<br>80 80<br>60 ee 60<br>Araee ee Ve, , : —<br>J<br>/<br>40 40 :<br>20 20<br>0 0<br>P p lA | | A<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =16 Ω ,R Goff =16 Ω ,V CE =600V<br>200 24<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 F Tvj = 125°C a 22 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>20 Eoff, Tvj = 150°C<br>ee e e ee<br>160<br>ie P o p py<br>18<br>Se e, tt<br>140<br>66 16 e o<br>120<br>SRR 14<br>100 12 ><br>i 2B eee ; eee<br>a ZO* ee <I<br>10<br>80<br>/ 8 Saasoo L [Za] ane<br>60<br>| ee<br>6<br>40 pi | tz | 4 aaedt Tt<br>a y aVeceaneeee<br>20 we Ane LPT<br>2<br>MERE<br>0 poet / 0 4 |<br>5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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## IGBT-Modul IGBT-Module Technische Information IFS100B12N3E4P_B11 / Technical Information
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Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =100A,V CE =600V<br>25 1<br>—— Se<br>Eon, Tvj = 125°C HH— i ZthJC : IGBT EEa HH} tH<br>Eoff, Tvj = 125°C ooo TTT<br>EEonoff, T, Tvjvj = 150°C = 150°C PTEE TT T T<br>20 a<br>a ATTA iONMTUTIIONOI<br>0,1<br>4a Ye<br>15<br>ea ||ft TTT ET TTT<br>PT [TTT]<br>_<br>10<br>0,01<br>Pe et et<br>gee<br>ee a ee |<br>PZaaaaae a<br>5<br>i: 1 2 3 4<br>ri[K/W]: 0,02383 0,05423 0,09889 0,11305<br>τ i[s]: 0,01 0,025 0,035 0,1<br>0 PEL] itd. 0,001 a PT TT TT<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =16 Ω ,T vj =150°C<br>250 200<br>IC, Modul Tvj = 25°C<br>IC, Chip 180 Tvj = 125°C<br>Tvj = 150°C<br>= ho e<br>200 160<br>140<br>Lie SEReeeeee ee<br>150 120<br>100<br>100 80<br>60<br>LLL Eannne /eneee<br>50 40<br>Saeee sane<br>20<br>p er<br>0 0<br>| || Et<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
## IGBT-Modul IGBT-Module IFS100B12N3E4P_B11
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Erec =f(I F) Erec =f(R G)<br>RGon JN, Ω ,V CE =600V IF = TOO A.V CE = 600 V<br>12 Se | 10 |<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>10<br>8<br>8<br>ea 6 NN :<br>Leer SST<br>6<br>aa 4 an —<br>4<br>2<br>2<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 ee 100000 ee |<br>H ZthJC : Diode e _ Rtyp ————<br>a [J p<br>H}.—4} 4} En es<br>a a | ry.<br>10000<br>INE UN EUITE EEM Ne ee<br>NT<br>0,1 PTEHTT viTT 2 Ne ee eee<br>YATEa TT TT TT aN\ eee<br>VT TE 1000 ————_————<br>PUI FETE EEE ETT) eeae rs<br>Ot i: 1 2 3 4 e e ee eSs<br>ri[K/W]: 0,04036 0,12753 0,09623 0,22588<br>τ i[s]: Tn 0,0008 0,02 Ton 0,035 0,09 PEE<br>0,01 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
7
Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module IFS100B12N3E4P_B11
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## **Schaltplan�/�circuit_diagram_headline**
## **Vorläufige�Daten Preliminary�Data**
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## **Gehäuseabmessungen�/�package�outlines**
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Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�NK date�of�publication:�2015-01-26<br>approved�by:�RS revision:�2.0<br>**----- End of picture text -----**<br>
8
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IGBT-Modul<br>IGBT-Module IFS100B12N3E4P_B11<br>**----- End of picture text -----**<br>
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Nutzungsbedingungen<br>**----- End of picture text -----**<br>
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application.<br>**----- End of picture text -----**<br>
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →