![IFS100B12N3E4B31BOSA1 — IGBT Module, Six Pack [Full Bridge], 100 A, 1.75 V, 515 W, 150 °C, Module](/media/3/2/D/76BF2257D0E40D23.webp)
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IFS100B12N3E4B31BOSA1
IGBT Module, Six Pack [Full Bridge], 100 A, 1.75 V, 515 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: MIPAQ
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 515W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 100A
- Power Dissipation Pd: 515W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 80.7 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules ## IFS100B12N3E4_B31 shunt **==> picture [221 x 83] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>. . .<br>VCES = 1200V<br>IC nom = 100A / ICRM = 200A<br>**----- End of picture text -----**<br> ## **典型应用** - 电机传动 - 伺服驱动器 - - ## **电气特性** - 低开关损耗 - T vyjop = - • (i V CEsat - - T vjop = - • Low V CEsat ## **机械特性** - 高功率周次和温度周次能力 - • 绝缘的基板 • 铜基板 • 标封装 - - - - 1 ## 技术信息�/�Technical�Information ## IGBT-模块 IGBT-modules IFS100B12N3E4_B31 **==> picture [86 x 38] intentionally omitted <==** **初步数据 Preliminary�Data** ## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** |技术信息/TechnicalInformation<br>IFS100B12N3E4_B31<br>IGBT-模块<br>IGBT-modules|| |---|---| |preparedby:CM<br>approvedby:MS<br>dateofpublication:2013-03-06<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj= 175°C<br>IC nom<br>100<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>总损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj= 175°C<br>Ptot<br>515<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 4,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,30<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,27<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,16<br>0,17<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,025<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,37<br>0,45<br>0,48<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,06<br>0,11<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 3700 A/µs (Tvj=150°C)<br>RGon= 1,6Ω<br>Eon<br>4,00<br>6,50<br>7,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 3400 V/µs (Tvj=150°C)<br>RGoff= 1,6Ω<br>Eoff<br>7,60<br>11,0<br>12,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,29<br>K/W<br>壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,086<br>K/W|| |preparedby:CM|dateofpublication:2013-03-06| |---|---| |approvedby:MS|revision:2.0| 2 IGBT-模块 IGBT-modules IFS100B12N3E4_B31 ## 技术信息�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** **初步数据 Preliminary�Data** ## **二极管,逆变器�/�Diode,�Inverter** ## **最大额定值�/�Maximum�Rated�Values** |反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |连续正向直流电流<br>ContinuousDCforwardcurrent||IF|100|||A| |正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A| |I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1550<br>1500|||A²s<br>A²s| |**特征值/CharacteristicValues**|||min.|typ.|max.|| |正向电压<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V| |反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||150<br>160<br>165||A<br>A<br>A| |恢复电荷<br>Recoveredcharge|IF= 100 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||9,60<br>17,0<br>19,0||µC<br>µC<br>µC| |反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||4,10<br>7,00<br>8,00||mJ<br>mJ<br>mJ| |结－壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,50|K/W| |壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W| ## **电流取样电阻�/�Shunt** |||||||| |---|---|---|---|---|---|---| |**电流取样电阻/Shunt**|||min.<br>typ.||max.|| |额定电阻值<br>Ratedresistance|Tc= 20°C|R20||1,50||mΩ| |温度系数(tcr)<br>Temperaturecoefficient(tcr)|20°C - 60°C|||< 30||ppm/K| |电流取样电阻工作温度<br>Operationtemperatureshunt-resistor||Ttvjop|||200|°C| |结－壳热阻<br>Thermalresistance;junktiontocase||RthJC|||8,7|K/W| ## **负温度系数热敏电阻�/�NTC-Thermistor** ## **特征值�/�Characteristic�Values** |**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**特征值/CharacteristicValues**|||min.<br>typ.||max.|| |额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| |根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.||||||| |preparedby:CM|dateofpublication:2013-03-06| |---|---| |approvedby:MS|revision:2.0| 3 IGBT-模块 IGBT-modules ## IFS100B12N3E4_B31 ## **初步数据** |#R_<br>| Module||||||||| |---|---|---|---|---|---|---|---|---| |绝缘测试电压|RMS, f = 50 Hz, t = 1 min|VISOL||||2,5||kV| |模块基板材料||||||Cu||| |内部绝缘材料<br>Internal isolation|BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|||||AI203||| |爬电距离<br>Creepage distance|OASENS<br>ER R-BFA /terminal toheatsink<br>OASENS<br>ER R- HOSENS<br>KH<br>/terminal to terminal|||||10,0||mm| |电气间隙<br>Clearance|OASENS<br>ER R-BFA /terminal toheatsink<br>OASENS<br>ER R- HOSENS<br>KH<br>/terminal to terminal|||||7,5||mm| |相对电痕指数||CTI||||> 200||| |||||min.||typ.|max.|| |壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||||0,009||K/W| |杂散电感,模块||LsCE||||20||nH| |模块引线电阻,端子-芯片|TC<br>-<br>°<br>ON<br>‘|RCC'+EE'||||1,80||mΩ| |最大结温<br>在开关状态下温度<br>~~Maximum junction temperature~~<br>~~Temperature under switching conditions~~|~~EESE BZ) -4 BB / inverter, brake-chopper~~<br>~~TEBE Bel2)-4H AR / inverter, brake-chopper~~|Tvj max<br>175<br>Tvj op<br>-40<br>150<br>~~Pf fd~~<br>~~Ff |]~~||||||°C<br>°C| |储存温度||Tstg||-40|||125|°C| |模块安装的安装扭距<br>Mounting torque for modul mounting|**S**eeM5ARSEAR VAY OyA AET<br>crew M5<br>- Mounting according to valid application note|M||3,00||-|6,00|Nm| |重量<br>Weight||G||||300||g| 4 IGBT-模块 IGBT-modules ## IFS100B12N3E4_B31 **==> picture [49 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> 初步数据<br>**----- End of picture text -----**<br> **==> picture [487 x 606] intentionally omitted <==** **----- Start of picture text -----**<br> I output C characteristic CE) IGBT,Inverter (typical) I output C characteristic CE) IGBT,Inverter (typical)<br>VGE ESV Tvj =150°C<br>200 200<br>Tvj = 25°C VGE = 19V<br>180 Tvj = 125°C 180 VGE = 17V<br>E2 Tvj = 150°C a F VGE = 15V eo / / ’<br>VGE = 13V<br>160 ee 160 VGE = 11V<br>VGE = 9V<br>140 140<br>pt fta ve e | KAZd<br>120 Pt PE ee 120 L eeer |<br>ee<br>100 100<br>80 Be e e ee) 80 eeecee<br>60 60<br>ee ee ee J<br>ee ee<br>40 40<br>20 Pp; yt | tT | 20 Llgr<br>ee ee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>se4FSCE IGBT, EAESS (FBZ) FFRIAR IGBT, WIS ( HAA)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC GE) Eon C off C)<br>VCE oy VGE woe Gon o16 Ω »,R Goff =1.6 Ω ,V CE =600V<br>200 24<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 Tvj = 125°C 22 Eoff, Tvj = 125°C<br>EFL Tvj = 150°C OZ] FO Eon, Tvj = 150°C C<br>20 Eoff, Tvj = 150°C<br>nl se pf}<br>160<br>18<br>SGG00)<br>140<br>4000 16 peeeeeeae<br>eee<br>120<br>14<br>SRR /, PLae<br>100 12<br>80 See eee2 10 e eeee 2s a e<br>8<br>60<br>SCE] ee eet<br>6<br>SEY) eee<br>40<br>4<br>SOA) eS<br>20<br>é) 2 ger | | tt | tt<br>Per<br>0 | EE | | 0 COPE<br>5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-模块 IGBT-modules ## IFS100B12N3E4_B31 ## **初步数据** **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =100A,V CE =600V<br>25 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C H— SO E ee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>20 Ee a | fl |]. a ETa a ee | oe | | th|<br>_ ee een<br>15<br>7 ST TT<br>oa ee eg 0,1 ea m<br>EAR od<br>10 “77“|ra PTDeey [Tee] ee |<br>B |<br>A<br>yt|<br>5<br>A A<br>i: 1 2 3 4<br>ri[K/W]: 0,0174 0,0957 0,0928 0,0841<br>Yi L$ τ i[s]: 0,01 0,02 0,05 0,1<br>0 0,01<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RiwZSLiF K IGBT, aes ( RBSOA ) LEG mE RS ewe ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE SVR Goff =1.6 Ω ,T vj =150°C a<br>250 200<br>IC, Modul Tvj = 25°C<br>IC, Chip 180 Tvj = 125°C<br>= F Tvj = 150°C e<br>200 160<br>140<br>150 120<br>100<br>100 80<br>60<br>50 40 af.<br>VA<br>20<br>p er<br>0 0<br>| || Et<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 ## $£743 IGBT-模块 IGBT-modules & / Technical IFS100B12N3E4_B31 Information ## **初步数据** **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec = f(I F) Erec =f(R G)<br>RGon 6 Ω ,V CE =600V IF = OO A.V CE = 600 V<br>12 Se | 10 |<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>10<br>8<br>8<br>6<br>mea Reet<br>6 Z|<br>ye 4 “EOE<br>4<br>x LEE<br>2<br>2<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>transientmAthermalRE impedanceESS Diode, Inverter RREABIARNTC-Thermistor-temperatureBA BEBE characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 ee 100000 ee |<br>ZthJC : Diode Rtyp<br>a ll<br>a a [J p<br>PT TTT EET TTT es<br>eI es ee<br>PLATT Tet EIT TT ry.<br>INE AHN EIT EE 10000 N<br>/ ff ————————ye en = [Ee]<br>0,1 / PSE EEE<br>FP NN<br>PotrTa TARTAU TeCE ETT| ETT| 1000 aN————_————~~ eee<br>PVUUIEa aT LTTE TIE ||| ET) eeee ae rs<br>i: 1 2 3 4<br>ri[K/W]: 0,03 0,165 0,16 0,145<br>Tomo τ i[s]: 0,01 0,02 0,05 0,1 PEE<br>0,01 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 ## 技术信息�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** IGBT-模块 IGBT-modules IFS100B12N3E4_B31 **==> picture [96 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> 初步数据<br>Preliminary�Data<br>**----- End of picture text -----**<br> **==> picture [450 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> 接线图�/�circuit_diagram_headline<br>J<br>**----- End of picture text -----**<br> ## **封装尺寸�/�package�outlines** **==> picture [50 x 48] intentionally omitted <==** **==> picture [228 x 78] intentionally omitted <==** **==> picture [238 x 65] intentionally omitted <==** **==> picture [32 x 45] intentionally omitted <==** **==> picture [32 x 45] intentionally omitted <==** **==> picture [99 x 94] intentionally omitted <==** prepared�by:�CM date�of�publication:�2013-03-06 approved�by:�MS revision:�2.0 8 IGBT-模块 IGBT-modules ## IFS100B12N3E4_B31 ## **初步数据** ## **使用条件和条款** ## 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。 除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们的销售部，他们将对您负责 请注意，对这类应用我们强烈建议 保留产品规格书的修改权 9
Updated at April 28, 2026
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About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →