IFF450B12ME4PB11BPSA1

IGBT Module, Dual [Half Bridge], 450 A, 1.75 V, 150 °C, Module

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: IGBT Modules
Transistor Polarity:Dual N Channel; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Trans
SVHC: No SVHC (25-Jun-2025)
Product Range: EconoDUAL 3
IGBT Technology: IGBT 4 [Trench/Field Stop]
IGBT Termination: Press Fit
Power Dissipation: -
IGBT Configuration: Dual [Half Bridge]
Transistor Mounting: Panel
Transistor Polarity: Dual N Channel
DC Collector Current: 450A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 450A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 1.75V
Collector Emitter Saturation Voltage Vce(on): 1.75V

Delivery and price
Units per pack	10
Price	168.02 €
Current stock	10+
Lead time	30 days

Datasheet

## IFF450B12ME4P_B11 

EconoDUAL™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC/ Strommesswiderstand 

J VCES = 1200V IC nom = 450A / ICRM = 900A 

- Hochleistungsumrichter 

- • Motorantriebe • Servoumrichter • USV-Systeme • Windgeneratoren 

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- • T vj op = 150°C • VCEsat mit 

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   - • T vj op = • VCEsat 

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- Thermisches Interface Material bereits aufgetragen 

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Datasheet www.infineon.com 

2017-12-01 

IFF450B12ME4P_B11 

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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|IC nom|450|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|900|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,75<br>2,00<br>2,05|2,10|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 17,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,25|5,80|6,35|V|
|Gateladung<br>Gatecharge|VGE= -15 V ... +15 V|QG||3,30||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,7||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||28,0||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||1,55||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||3,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,17<br>0,19<br>0,19||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,05<br>0,05<br>0,06||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,37<br>0,46<br>0,49||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,08<br>0,18<br>0,20||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 450 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 7750 A/µs (Tvj= 150°C)<br>RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||17,0<br>30,0<br>35,5||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 450 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3350 V/µs (Tvj= 150°C)<br>RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||36,0<br>54,0<br>60,0||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||1800||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,0959|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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IFF450B12ME4P_B11 

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## **Diode,�Wechselrichter�/�Diode,�Inverter** 

|**Diode,Wechselrichter/Diode,Inverter**|**Diode,Wechselrichter/Diode,Inverter**||||||
|---|---|---|---|---|---|---|
|**HöchstzulässigeWerte/MaximumRatedValues**|||||||
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|||V|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|450|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|28000<br>25000|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,75<br>1,70|2,35|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 7750 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||395<br>455<br>460||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 450 A, - diF/dt = 7750 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||50,0<br>84,5<br>98,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 7750 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||26,5<br>41,5<br>46,5||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,136|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|**Strommesswiderstand/Shunt**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TH= 20°C|R20||0,33||mΩ|
|Temperaturkoeffizient<br>Temperaturecoefficient(tcr)|20°C - 60°C|||< 30||ppm/K|
|BelastbarkeitproShunt-Widerstand<br>Loadcapacitypershunt-resistor|TH= 80°C|P|||40|W|
|BetriebstemperaturShunt-Widerstand<br>Operationtemperatureshunt-resistor||Ttvjop|||200|°C|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proShunt-Widerstand/pershunt-resistor<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||3,0|K/W|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

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IFF450B12ME4P_B11 

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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||1,15||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|



Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 

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Datasheet 

4 

IFF450B12ME4P_B11 

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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
900 900<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>750 750 VGE = 11V<br>VGE = 9V<br>600 600<br>450 450<br>300 300<br>150 150<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.62� Ω ,�RGoff�=�0.62� Ω ,�VCE�=�600�V 

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900 160<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 140 EEoffoff, T, Tvjvj = 125°C = 150°C<br>750<br>120<br>600<br>100<br>450 80<br>60<br>300<br>40<br>150<br>20<br>0 0<br>5 6 7 8 9 10 11 12 13 0 150 300 450 600 750 900<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IFF450B12ME4P_B11 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =450A,V CE =600V<br>120 1<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 125°C<br>Se Eoff, Tvj = 150°C . Se<br>100<br>WA |<br>80 0,1<br>PESE eo<br>Nee<br>60<br>afi eeu ati il<br>40 0,01<br>} Sa<br>ACect<br>20<br>i: 1 2 3 4<br>ri[K/W]: 0,005 0,036 0,039 0,0159<br>τ i[s]: 0,0013 0,0385 0,269 1,71<br>po UNTT<br>0 0,001 VT<br>0 1 2 3 4 5 6 7 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC CE)<br>VGE ee sy, R Goff =062 Ω ,T vj =150°C<br>1400 900<br>IC, Modul Tvj = 25°C<br>1300 I C , Chip Tvj = 125°C<br>Tvj = 150°C<br>a<br>1200<br>750<br>1100<br>1000<br>600<br>900<br>800<br>700 450<br>600<br>500<br>300 /<br>400<br>300<br>150<br>200<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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Erec =f (I F) Erec =f(R G)<br>RGon =0.62 Ω ,V CE =600V IF =450A,V CE =600V<br>60 50<br>55 EErecrec,, T Tvvjj = 125°C = 150°C 45 E E rec rec , T , T vj vj  = 125°C  = 150 ° C<br>\<br>= \ |<br>\<br>50<br>\<br>40 N<br>45 ~ ™~s> ~~<br>35<br>~ ™<br>40<br>30 pO> ~™<br>35<br>30 25<br>25 7 } 20<br>20 /<br>15<br>/<br>15<br>10<br>10<br>5 Ae 5<br>0 0<br>0 150 300 450 600 750 900 0 1 2 3 4 5 6 7<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJH = f (t) R=f(T)<br>1 a ee eee 100000 a a a a a<br>HES ZthJH : Diode Hp Rtyp<br>ee ee a ee<br>0,1 10000<br>0,01 1000<br>i: 1 2 3 4<br>ri[K/W]: 0,0083 0,0626 0,047 0,0181<br>τ i[s]: 0,00118 0,0323 0,202 1,42<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


Datasheet 

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## **Schaltplan�/�Circuit�diagram** 

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J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS**

Updated at April 28, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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