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IDWD60E120D7XKSA1
Standard Recovery Diode, 1.2 kV, 94 A, Single, 3 V, 175 ns, 228 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Standard Recovery Rectifier Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Single
- Forward Voltage Max: 3V
- Forward Surge Current: 228A
- Reverse Recovery Time: 175ns
- Average Forward Current: 94A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.45 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
**IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** ## **Final datasheet** **Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode for both Industrial and Home Appliance applications** ## **Features** - VRRM = 1200 V - IF = 60 A - 1200 V emitter controlled technology - Maximum junction temperature Tvjmax = 175°C - Low forward voltage (VF) - Low reverse recovery charge - Ultrafast recovery times - Soft recovery characteristics - Pb-free lead plating; RoHS compliant - Humidity robust design ## **Potential applications** - String inverter - EV-Charging - Heat pump ## **Product validation** - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 ## **Description** Pin definition: - Pin 1 and backside - Cathode - Pin 2 - Anode 1 CASE 2 **Type Package Marking** IDWD60E120D7 PG-TO247-2-STD-NA8.8 E60MD7 ~~>~~ Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2023-12-15 **IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** **==> picture [105 x 47] intentionally omitted <==** **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**4**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**5**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12| Datasheet Revision 1.00 2023-12-15 2 **IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Internal emitter<br>inductance measured 5<br>mm (0.197 in.) from case|_L_E||||13||nH| |Storage temperature|_T_stg|||-55||150|°C| |Soldering temperature|_T_sold|wave soldering 1.6 mm (0.063 in.) from case<br>for 10 s||||260|°C| |Mounting torque|_M_|M3 screw, Maximum of mounting processes:<br>3||||0.6|Nm| |Thermal resistance,<br>junction-ambient|_R_th(j-a)|||||40|K/W| |Diode thermal resistance,<br>junction-case|_R_th(j-c)||||0.44|0.57|K/W| |**2**<br>**Diode**|**2**<br>**Diode**|**2**<br>**Diode**||||| |---|---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj≥ 25 °C|||1200|V| |Diode forward current,<br>limited by Tvjmax|_I_F||_T_c= 25 °C||94|A| ||||_T_c= 100 °C||60|| |Diode pulsed current, tp<br>limited by Tvjmax|_I_Fpulse||||240|A| |Diode surge non repetitive<br>forward current, sine<br>halfwave|_I_FSM|_t_p= 10 ms|_T_c= 25 °C||228|A| |Diode surge repetitive<br>forward current, sine<br>halfwave_1)_|_I_FRM|_t_p= 10 ms|_T_c= 25 °C||180|A| |Power dissipation|_P_tot||_T_c= 25 °C||265|W| ||||_T_c= 100 °C||132|| _1)_ Not subject to production test. The test was performed with 20k pulses (half-wave rectified sine with 10 ms period). Datasheet Revision 1.00 2023-12-15 3 **IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** **==> picture [105 x 47] intentionally omitted <==** ## **2 Diode** |**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 60 A|_T_vj= 25 °C||2.5|3|V| ||||_T_vj= 150 °C||2.35||| ||||_T_vj= 175 °C||2.3||| |Reverse leakage current|_I_R|_V_R= 1200 V|_T_vj= 25 °C|||20|µA| ||||_T_vj= 175 °C||1000||| |Diode reverse recovery<br>time|_t_rr|_V_R= 800 V|_T_vj= 25 °C,<br>_I_F= 60 A,<br>_-di_F_/dt_= 1000 A/µs||175||ns| ||||_T_vj= 25 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1000 A/µs||140||| ||||_T_vj= 175 °C,<br>_I_F= 60 A,<br>_-di_F_/dt_= 1000 A/µs||200||| ||||_T_vj= 175 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1000 A/µs||160||| |Diode reverse recovery<br>charge|_Q_rr|_V_R= 800 V|_T_vj= 25 °C,<br>_I_F= 60 A,<br>_-di_F_/dt_= 1000 A/µs||1.8||µC| ||||_T_vj= 25 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1000 A/µs||1.25||| ||||_T_vj= 175 °C,<br>_I_F= 60 A,<br>_-di_F_/dt_= 1000 A/µs||3.65||| ||||_T_vj= 175 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1000 A/µs||2.65||| ## **(table continues...)** Datasheet Revision 1.00 2023-12-15 4 **IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** **==> picture [105 x 47] intentionally omitted <==** ## **2 Diode** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode peak reverse<br>recovery current|_I_rrm|_V_R= 800 V|_T_vj= 25 °C,<br>_I_F= 60 A,<br>_-di_F_/dt_= 1000 A/µs||22||A| ||||_T_vj= 25 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1000 A/µs||20||| ||||_T_vj= 175 °C,<br>_I_F= 60 A,<br>_-di_F_/dt_= 1000 A/µs||34||| ||||_T_vj= 175 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1000 A/µs||32||| |Diode peak rate of fall of<br>reverse recovery current|_di_rr_/dt_|_V_R= 800 V|_T_vj= 25 °C,<br>_I_F= 60 A,<br>_-di_F_/dt_= 1000 A/µs||140||A/µs| ||||_T_vj= 25 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1000 A/µs||190||| ||||_T_vj= 175 °C,<br>_I_F= 60 A,<br>_-di_F_/dt_= 1000 A/µs||190||| ||||_T_vj= 175 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1000 A/µs||255||| |Reverse recovery energy|_E_rec|_V_R= 800 V|_T_vj= 25 °C,<br>_I_F= 60 A,<br>_-di_F_/dt_= 1000 A/µs||0.6||mJ| ||||_T_vj= 25 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1000 A/µs||0.4||| ||||_T_vj= 175 °C,<br>_I_F= 60 A,<br>_-di_F_/dt_= 1000 A/µs||1.25||| ||||_T_vj= 175 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1000 A/µs||0.9||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| Datasheet Revision 1.00 2023-12-15 5 **IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** **==> picture [105 x 47] intentionally omitted <==** ## **2 Diode** _**Note** : For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ _Electrical Characteristic at T_ vj _= 25°C, unless otherwise specified._ _Dynamic test circuit, parasitic inductance L_ σ _= 27 nH, parasitic capacitor C_ σ _= 12 pF from Fig. E, IKY75N120CH7 was used as IGBT._ Datasheet Revision 1.00 2023-12-15 6 **IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** **3 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **3 Characteristics diagrams** ## **Diode transient thermal impedance as a function of pulse width** **==> picture [56 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> Zth(j-c) = f(tp)<br>**----- End of picture text -----**<br> ## **Typical diode forward current as a function of forward voltage** IF = f(VF) D = tp/T **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.0001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br> ## **Typical diode forward voltage as a function of junction temperature** VF = f(Tvj) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>4.5<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 240<br>200<br>160<br>120<br>80<br>40<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> ## **Typical reverse recovery time as a function of diode current slope** trr = f(diF/dt) VR = 800 V, IF = 60 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 1000 2000 3000 4000<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-12-15 7 **IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** **==> picture [105 x 47] intentionally omitted <==** ## **3 Characteristics diagrams** ## **Typical reverse recovery charge as a function of diode current slope** Qrr = f(diF/dt) VR = 800 V, IF = 60 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>3<br>2<br>1<br>0<br>0 1000 2000 3000 4000<br>**----- End of picture text -----**<br> **Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** dirr/dt = f(diF/dt) VR = 800 V, IF = 60 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0<br>-200<br>-400<br>-600<br>-800<br>-1000<br>-1200<br>0 1000 2000 3000 4000<br>**----- End of picture text -----**<br> ## **Typical reverse recovery current as a function of diode current slope** Irrm = f(diF/dt) VR = 800 V, IF = 60 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>80<br>60<br>40<br>20<br>0<br>0 1000 2000 3000 4000<br>**----- End of picture text -----**<br> **Typical reverse energy losses as a function of diode current slope** Erec = f(diF/dt) VR = 800 V, IF = 60 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 1000 2000 3000 4000<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-12-15 8 **IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** **4 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **4 Package outlines** ## **PG-TO247-2-STD-NA8.8** **==> picture [140 x 187] intentionally omitted <==** |PACKAGE - GRO<br>NUMBER:|**PG-TO247-2-U01**<br>UP|**PG-TO247-2-U01**<br>UP|||| |---|---|---|---|---|---| |**DIMENSION**|**S**<br>MIN.<br>MAX.<br>**MILLIMETERS**||||| |||MAX.|||| |**A**|4.90|5.10|**L**|19.80|20.10| |**A1**|2.31|2.51|**L1**|---|4.30| |**A2**|1.90|2.10|**øP**|3.50|3.70| |**b**|1.16|1.26|**øP1**|7.00|7.40| |**b1**|1.96|2.06|**øP2**|2.40|2.60| |**c**|0.59|0.66|**Q**|5.60|6.00| |**D**|20.90|21.10|**Q1**|9.80|10.20| |**D1**|16.25|16.85|**S**|6.05|6.25| |**D2**|1.05|1.35|||| |**E**|15.70|15.90|||| |**E1**|13.10|13.50|||| |**E2**|4.90|5.10|||| |**E3**|2.40|2.60|||| |**E4**|600|640|||| |**e**<br>|10.88<br>.<br>.||||| |**N**|2||||| ## **Figure 1** Datasheet Revision 1.00 2023-12-15 9 **IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** **==> picture [105 x 47] intentionally omitted <==** **5 Testing conditions** **==> picture [185 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 5 Testing conditions<br>**----- End of picture text -----**<br> **==> picture [502 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V C C<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.00 2023-12-15 10 **IDWD60E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |1.00|2023-12-15|Final datasheet| Datasheet Revision 1.00 2023-12-15 11 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2023-12-15 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2023 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABI240-001** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 22, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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