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IDW75E60FKSA1
Standard Recovery Diode, 600 V, 120 A, Single, 2 V, 220 A
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- Manufacturer: INFINEON
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):120A; Diode Configuration:Single; Forward Voltage VF Max:2V; Reverse Recovery Time trr Max:-; Forward Surge Current Ifsm Max:22
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: IDW75
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Single
- Forward Voltage Max: 2V
- Forward Surge Current: 220A
- Reverse Recovery Time: -
- Average Forward Current: 120A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.896 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
IDW75E60 ## Fast Switching Emitter Controlled Diode ## **Features:** - 600V EmCon technology - Fast recovery - Soft switching - Low reverse recovery charge - Low forward voltage - 175°C junction operating temperature - Easy paralleling - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models: http://www.infineon.com/emcon/ ## **Applications:** PG-TO247-3 - Welding - Motor drives **==> picture [465 x 356] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |Type|V|RRM|I|F|V|F|,Tj=25°C|T|j,max|Marking|Package| |IDW75E60|600V|75A|1.65V|175C|D75E60|PG-TO247-3| |Maximum Ratings| |Parameter|Symbol|Value|Unit| |TT| |Repetitive peak reverse voltage|V|R RM|600|V| |Continuous forward current| |T|C = 25C|120| |T|C = 90C|I|F|82|A| |T|C = 100C|a|75| |Surge non repetitive forward current| |T|C = 25C,|t|p = 10 ms, sine halfwave|||I|FS M|220|A| |Maximum repetitive forward current| |T|C = 25C,|t|p limited by|t|j,max|, D|= 0.5|I|FR M|225|A| |Power dissipation| |T|C = 25C|300| |T|C = 90C|P|t ot|170|W| |T|C = 100C|Sf|150| |Operating|junction temperature|T|j|-40…+175| |ee|eee| |Storage temperature|ee|T|st g|-55...+150|ee|°C| |Soldering temperature| |1.6mm (0.063 in.) from case for 10 s|||T|S|260| **----- End of picture text -----**<br> 1 Rev. 2.2 20.09.2013 IFAG IPC TD VLS IDW75E60 **==> picture [142 x 63] intentionally omitted <==** ## **Thermal Resistance** |**Thermal Resistance**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**| |**Characteristic**||||| |Thermal resistance,<br>junction – case|_R_t hJC||0.5|K/W| |Thermal resistance,<br>junction – ambient|_R_t hJA||40|| ## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified |**Electrical Characteristic,**at_T_j= 25|C, unless ot|herwise specified||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**Static Characteristic**||||||| |Collector-emitter breakdown voltage|_V_R RM|_I_R=0.25mA|600|-|-|V| |Diode forward voltage|_V_F|_I_F=75A<br>_T_j=25C<br>_T_j=175C|-<br>-|1.65<br>1.65|2.0<br>-|| |Reverse leakage current|_I_R|_V_R=600V<br>_T_j=25C<br>_T_ j=175C|-<br>-|-<br>-|40<br>2500|A| ## **Dynamic Electrical Characteristics** |Diode reverse recoverytime|_t_rr|_T_j=25C<br>_V_R=400V, _I_F=75A,<br>_dI_F_/dt_=1460A/µs|-|121|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|2.4|-|µC| |Diodepeak reverse recoverycurrent|_I_rr||-|38.5|-|A| |Diode peak rate of fall of reverse<br>recovery current during_t_b|_dI_rr_/dt_||-|921|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_j=125C<br>_V_R=400V, _I_F=75A,<br>_dI_F_/dt_=1460A/µs|-|155|-|ns| |Diode reverse recoverycharge|_Q_rrm||-|4.4|-|µC| |Diodepeak reverse recoverycurrent|_I_rr||-|46.6|-|A| |Diode peak rate of fall of reverse<br>recoverycurrent during_t_b|_dI_rr_/dt_||-|960|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_j=175C<br>_V_R=400V, _I_F=75A,<br>_dI_F_/dt_=1460A/µs|-|182|-|ns| |Diode reverse recoverycharge|_Q_rrm||-|5.8|-|µC| |Diodepeak reverse recoverycurrent|_I_rr||-|56.2|-|A| |Diode peak rate of fall of reverse<br>recovery current during_t_b|_dI_rr_/dt_||-|1013|-|A/µs| Rev. 2.2 20.09.2013 2 IFAG IPC TD VLS IDW75E60 **==> picture [142 x 63] intentionally omitted <==** **==> picture [232 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> 300W<br>250W<br>200W<br>150W<br>100W<br>50W<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br> **==> picture [102 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T C, CASE TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 1. Power dissipation as a function of case temperature** ( _T_ j 175C) **==> picture [224 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 120A<br>90A<br>60A<br>30A<br>0A<br>25°C 75°C 125°C<br>FORWARD CURRENT<br>I F,<br>**----- End of picture text -----**<br> **==> picture [102 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T C, CASE TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 2. Diode forward current as a function of case temperature** ( _T_ j 175C) **==> picture [476 x 240] intentionally omitted <==** **----- Start of picture text -----**<br> 200A<br>TJ =25°C 2.0V I F =150A<br>175°C<br>150A<br>1.5V 75A<br>37.5A<br>100A<br>1.0V<br>50A 0.5V<br>0A 0.0V<br>0°C 50°C 100°C 150°C<br>0V 1V 2V<br>V F, FORWARD VOLTAGE T J,, JUNCTION TEMPERATURE<br>I FORWARD CURRENTF, V FORWARD VOLTAGEF,<br>**----- End of picture text -----**<br> **==> picture [119 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T J,, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 3. Typical diode forward current as a function of forward voltage** **Figure 4. Typical diode forward voltage as a function of junction temperature** Rev. 2.2 20.09.2013 3 IFAG IPC TD VLS IDW75E60 **==> picture [142 x 63] intentionally omitted <==** **==> picture [232 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> 200ns<br>T =175°C<br>J<br>150ns<br>100ns<br>T =25°C<br>J<br>50ns<br>0ns<br>1000A/µs 1500A/µs<br>REVERSE RECOVERY TIME<br>t rr,<br>**----- End of picture text -----**<br> **==> picture [125 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> di F /dt , DIODE CURRENT SLOPE<br>**----- End of picture text -----**<br> **Figure 5. Typical reverse recovery time as a function of diode current slope** ( _V_ R=400V, _I_ F=75A, Dynamic test circuit in Figure E) **==> picture [231 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> 5µC<br>T =175°C<br>J<br>4µC<br>3µC<br>2µC<br>T =25°C<br>J<br>1µC<br>0µC<br>1000A/µs 1500A/µs<br>REVERSE RECOVERY CHARGE<br>rr,<br>Q<br>**----- End of picture text -----**<br> **==> picture [125 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> di F /dt , DIODE CURRENT SLOPE<br>**----- End of picture text -----**<br> - **Figure 6. Typical reverse recovery charge as a function of diode current slope** - ( _V_ R = 400V, _I_ F = 75A, Dynamic test circuit in Figure E) **==> picture [475 x 298] intentionally omitted <==** **----- Start of picture text -----**<br> T J =175°C -1200A/µs T J =175°C<br>60A<br>-1000A/µs<br>T =25°C<br>50A J<br>-800A/µs<br>40A<br>T =25 ° C<br>J -600A/µs<br>30A<br>-400A/µs<br>20A<br>-200A/µs<br>10A<br>0A 0A/µs<br>1000A/µs 1500A/µs<br>1000A/µs 1500A/µs<br>di F /dt , DIODE CURRENT SLOPE di F /dt , DIODE CURRENT SLOPE<br>Figure 7. Typical reverse recovery current Figure 8. Typical diode peak rate of fall of<br>as a function of diode current reverse recovery current as a<br>slope function of diode current slope<br>( V R = 400V, I F = 75A, ( V R=400V, I F=75A,<br>Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)<br>DIODE PEAK RATE OF FALL<br>REVERSE RECOVERY CURRENT /dt ,<br>I rr, dirr OF REVERSE RECOVERY CURRENT<br>**----- End of picture text -----**<br> Rev. 2.2 20.09.2013 4 IFAG IPC TD VLS IDW75E60 **==> picture [142 x 63] intentionally omitted <==** **==> picture [232 x 242] intentionally omitted <==** **----- Start of picture text -----**<br> D =0.5<br>10-1K/W 0.2<br>0.1 R , ( K / W ) , ( s )<br>0.0556 0.1495<br>0.05 0.1757 0.02797<br>0.02 0.12374 3.623 E-3<br>0.12192 3.276 E-4<br>0.01 0.02305 2.635 E-5<br>10-2K/W R 1 R 2<br>C 1 = 1 / R 1 C 2 = 2 / R 2<br>single pulse<br>1µs 10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH<br>TRANSIENT THERMAL IMPEDANCE<br>thJC,<br>Z<br>**----- End of picture text -----**<br> **Figure 9. Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ P/ _T_ ) Rev. 2.2 20.09.2013 IFAG IPC TD VLS 5 IDW75E60 Rev. 2.2 20.09.2013 6 IFAG IPC TD VLS IDW75E60 **==> picture [142 x 63] intentionally omitted <==** **Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ) **.** ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 20.09.2013 IFAG IPC TD VLS 7
Updated at April 22, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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