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IDW75D65D1XKSA1
Standard Recovery Diode, 650 V, 150 A, Single, 1.7 V, 108 ns, 580 A
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- Manufacturer: INFINEON
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:650V; Forward Current If(AV):150A; Diode Configuration:Single; Forward Voltage VF Max:1.7V; Reverse Recovery Time trr Max:108ns; Forward Surge Curr
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: Rapid1
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Single
- Forward Voltage Max: 1.7V
- Forward Surge Current: 580A
- Reverse Recovery Time: 108ns
- Average Forward Current: 150A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.44 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## Diode IDW75D65D1 ## IDW75D65D1 ## **Features:** ## **Applications:** **==> picture [359 x 246] intentionally omitted <==** **----- Start of picture text -----**<br> A A<br>JEDEC for target applications<br>technology<br>behaviour of key parameters<br>V F)<br>charge ( Q rr)<br>current ( I rrm)<br>temperature<br>C<br>; eS<br>ee<br>ce<br>in inverters and motor drives ys<br>supplies<br>1<br>2<br>3<br>**----- End of picture text -----**<br> ## **Key Performance and Package Parameters** |**Type**|**_V_rrm**|**_I_f**|**_V_f, ****_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IDW75D65D1|650V|75A|1.35V|175°C|D75ED1|PG-TO247-3| 2 IDW75D65D1 **==> picture [146 x 65] intentionally omitted <==** Emitter�Controlled�Diode�Rapid�1�Dual�Anode�Series ## **Table of Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3 Rev.�2.1,��2014-12-10 IDW75D65D1 **==> picture [146 x 65] intentionally omitted <==** ## Emitter�Controlled�Diode�Rapid�1�Dual�Anode�Series ## **Maximum Ratings** **For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Repetitivepeakreversevoltage,_T_vj≥25°C|_V_RRM||650|V| |Diodeforwardcurrent,limitedby_T_vjmax1)<br>_T_C=25°C<br>_T_C=100°C|_I_F||150.0<br>75.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||225.0|A| |Diode surge non repetitive forward current2)<br>_T_C=25°C,_t_p=10.0ms,sinehalfwave|_I_FSM||580.0|A| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||326.0<br>163.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal Resistances** |**Thermal Resistances**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max. Value**||**Unit**| |**Characteristic**|||||| |Diode thermal resistance,3)<br>junction - case|_R_th(j-c)|||0.46|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W| ## **Electrical Characteristics, at Tvj = 25°C, unless otherwise specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**Static Characteristic**||||||| |Diode forward voltage|_V_F|_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.32<br>1.28|1.70<br>-<br>-|V| |Reverse leakage current|_I_R|_V_R=650V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>3000.0|40.0<br>-|µA| > 1) Maximum current for pin 1 and pin 3 is 80A (value limited by bondwire). 2) For a balanced current flow through pins 1 and 3. > 3)�Please�be�aware�that�in�nonstandard�load�conditions,�due�to�high� _R_ th(j-c),� _T_ vj�close�to� _T_ vjmax�can�be�reached. Rev.�2.1,��2014-12-10 4 IDW75D65D1 **==> picture [146 x 65] intentionally omitted <==** Emitter�Controlled�Diode�Rapid�1�Dual�Anode�Series ## **Electrical Characteristic, at** _**T**_ **vj = 25°C, unless otherwise specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**Dynamic Characteristic**||||||| |Internal emitter inductance1)<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH| ## **Switching Characteristics, Inductive Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**Diode Characteristic, at****_T_vj = 25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IGZ100N65H5.|-|108|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.25|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|19.9|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1100|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=200A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IGZ100N65H5.|-|127|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.48|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|6.4|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-32|-|A/µs| ## **Switching Characteristics, Inductive Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**Diode Characteristic, at****_T_vj = 175°C/125°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IGZ100N65H5.|-|174|-|ns| |Diode reverse recoverycharge|_Q_rr||-|4.16|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|37.9|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1170|-|A/µs| 1) For a balanced current flow through pins 1 and 3. Rev.�2.1,��2014-12-10 5 IDW75D65D1 **==> picture [146 x 65] intentionally omitted <==** Emitter�Controlled�Diode�Rapid�1�Dual�Anode�Series |Diode reverse recoverytime|_t_rr|_T_vj=125°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=200A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IGZ100N65H5.|-|184|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|1.64|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|13.2|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-62|-|A/µs| 6 Rev.�2.1,��2014-12-10 IDW75D65D1 **==> picture [233 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>315<br>280 De<br>= 245 | \| |<br>bé 210 |] N \|<br>a<br>a ee<br>D 175<br>e 140 | | | \ | |<br>i \<br>105<br>pe | |Xf<br>70<br>ar]<br>35<br>:<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br> Figure 1. **Power dissipation as a function of case temperature** ( _T_ vj ≤ 175°C) **==> picture [235 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> é LAL D = 0.5 in |<br>0.2<br>WW Saami<br>g Sf<br>0.1<br>eB Vie eaill<br>0.05<br>=: zr ip)<br>i 0.1 LY ll 0.02<br>ESFZ Aella7 Zaeee 0.01 10 |<br>i AP | er OA single pulse Hl<br>=b CUI AE alli ill,<br>6 Ct ae Lat ar<br>2 Ie eei<br>SL awi WAT oe mi Re yf<br>i: 1 2 3 4 5 6 7<br>ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3<br>τ i[s]: 1.0E-5 3.0E-5 2.2E-4 2.2E-3 0.01247 0.10291 1.85641<br>EE<br>0.01<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 3. **Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ p/T) **==> picture [233 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>140<br>ttt tt<br>Nf<br>120<br>fe | i<br>acJ 100<br>=)<br> ee<br>© 80<br>fe }<br>—_: 6040 rey TNT\<br>20<br>EN<br>PEIN<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>I C<br>**----- End of picture text -----**<br> Figure 2. **Collector current as a function of case temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) **==> picture [236 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>T vj I F [75A]<br>225 Pf | 29 T 5°C, vj I [=] F<br>T vj I F<br>fe 8 ]<br>200<br>PS | Ee<br>uuo 175 POSEss | ON. PPE]<br>2 Sp<br>ef 150 KL|<br>ra, *s mae<br>Ww ~ S me<br>7> 125 Lee eeese<br>re ee me a<br>= 100 aee ee<br>%) 75 Pp PEERS<br>a.<br>a* 50<br>25<br>Pf Ff fd<br>0<br>200 600 1000 1400 1800 2200 2600 3000<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br> Figure 4. **Typical reverse recovery time as a function of diode current slope** ( _V_ R=400V) 7 IDW75D65D1 **==> picture [476 x 625] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0 ee a | 70 ES<br>T vj I F T vj I F<br>5.5 [=—se--- T vj =125°C, sm) I F =/75A 1 e--- T vj =125°C, Ta I F =/75A| an><br>T vj I F T vj I F<br>60<br>5.0<br>e e e ) | f eel<br>uw 4.5 kK “ o -<br>50<br><x 4.0 “ a o 7<br>acer | [oot] a“ | |ew5 aaa“ ama uo<br>eea 3.5 > = > 40 | LTRma wea Lepa<br>ae 3.0 i wa<br>en 2.5 ee 30 ft <—<br>; ing a<br>oree 2.0 ° ov fytae<br>20<br>: Hb fe<br>;a 1.5 | |peos<br>1.0 ee<br>10<br>VA<br>0.5<br>0.0 0<br>200 600 1000 1400 1800 2200 2600 3000 200 600 1000 1400 1800 2200 2600 3000<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/s]<br>Figure 5. Typical reverse recovery charge as a function Figure 6. Typical reverse recovery current as a<br>of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 TS | 150 Lt<br>T vj I F T vj<br>-250 eeel T vj =125°C, I F =/75A 135 ie T vj ee= 175°C<br>T vj I F<br>Py ) ToSe PT a TL<br>-500 |\ 120<br>[z] a et<br>fe)st -750 Xt \ tex= 105 F P<br>|<br>2]We -1000 Vt) Lu 90<br>t te Ei [tg]<br>b -1250 = 75<br>ge] : ‘Y indQ 1<br>Re -1500 UXeKni teeS 60 ELLEy4<br>a ee<br>-1750 45<br>‘<br>6 ee ee<br>ral -2000 NN 30 /<br>fAB \ Eef /<br>-2250 15<br>-2500 0<br>200 600 1000 1400 1800 2200 2600 3000 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00<br>dI F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 7. **Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** ( _V_ R=400V) Figure 8. **Typical diode forward current as a function of forward voltage** 8 Emitter Controlled Diode Rapid 1 Dual IDW75D65D1 Anode Series **==> picture [233 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1.75 a |<br>I F<br>--- I F =37.5A<br>I F<br>er<br>|<br>> 1.50 |. | | |<br>~¢BP rr<br>oOee 1.25 tena<br>O<br>><br>Q<br>~<br>ie<br>1.00<br>Oz =<br>ee a ee<br>te<br>0.75 Pt te<br>0.50<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 9. **Typical diode forward voltage as a function of junction temperature** 9 IDW75D65D1 ## PG-TO247-3 10 IDW75D65D1 **==> picture [146 x 65] intentionally omitted <==** Emitter�Controlled�Diode�Rapid�1�Dual�Anode�Series **==> picture [481 x 318] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br> **==> picture [252 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> Figure D. **==> picture [102 x 46] intentionally omitted <==** CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 11 Rev.�2.1,��2014-12-10 IDW75D65D1 **==> picture [146 x 65] intentionally omitted <==** Emitter Controlled Diode Rapid 1 Dual Anode Series ## Revision History ## IDW75D65D1 Revision: 2014-12-10, Rev. 2.1 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |1.1|2014-12-02|Preliminaryt data sheet| |2.1|2014-12-10|Final data sheet| ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1, 2014-12-10 12
Updated at April 22, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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