Image not available
Illustrative purposes only
IDW40E65D2FKSA1
Standard Recovery Diode, 650 V, 40 A, Single, 1.6 V, 36 ns, 250 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:650V; Forward Current If(AV):40A; Diode Configuration:Single; Forward Voltage VF Max:1.6V; Reverse Recovery Time trr Max:36ns; Forward Surge Current Ifsm Max
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: IDW40
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Single
- Forward Voltage Max: 1.6V
- Forward Surge Current: 250A
- Reverse Recovery Time: 36ns
- Average Forward Current: 40A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.846 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## Diode
IDW40E65D2
IDW40E65D2
**==> picture [46 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
Features:<br>**----- End of picture text -----**<br>
**==> picture [65 x 10] intentionally omitted <==**
**----- Start of picture text -----**<br>
Applications:<br>**----- End of picture text -----**<br>
**==> picture [109 x 262] intentionally omitted <==**
**----- Start of picture text -----**<br>
A<br>C<br>©linen<br>7<br>1<br>2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_rrm**|**_I_f**|**_V_f** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IDW40E65D2|650V|40A|1.6V|175°C|D40E65D2|PG-TO247-3|
2
IDW40E65D2
**==> picture [146 x 65] intentionally omitted <==**
## Emitter�Controlled�Diode
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
Rev.�1.2,��2013-05-22
IDW40E65D2
**==> picture [146 x 65] intentionally omitted <==**
## Emitter�Controlled�Diode
## **Maximum�ratings**
|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Repetitivepeak reverse voltage|_V_RRM||650|V|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Diode surge non repetitive forward current<br>_T_C=25°C,_t_p=8.3ms,sinehalfwave|_I_FSM||250.0|A|
|Powerdissipation_T_C=25°C|_P_tot||180.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|Diode thermal resistance,1)<br>junction - case|_R_th(j-c)|||0.84|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Diode forward voltage|_V_F|_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.60<br>1.65|2.30<br>-|V|
|Reverse leakage current|_I_R|_V_R=650V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
Rev.�1.2,��2013-05-22
4
IDW40E65D2
**==> picture [146 x 65] intentionally omitted <==**
## Emitter�Controlled�Diode
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|36|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.40|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|22.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-10000|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=200A/µs|-|75|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.13|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|2.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-54|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DiodeCharacteristic,at****_T_vj=175°C/125°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|60|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.14|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|32.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-8700|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=125°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=200A/µs|-|83|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.32|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|5.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-51|-|A/µs|
Rev.�1.2,��2013-05-22
5
IDW40E65D2
**==> picture [472 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
180 1 ooo<br>ooo<br>a ee ||<br>160 NR |<br>\ = Eo<br>\ S a A<br>140 a =<br>==: 120 PINE EE 2a ST29eeeeo, 4 D=0.5<br>0.2<br>e ci<br>: 100 it Te ARTI 0.1<br>7a= \ :=zoe 0.1 eA)L LatWu7zAuiHa||=aDe 0.050.02 Co i<br>aoe 80 \ Wwaa eriarcl |||<br>Ww 7 20/20 0.01 EL |<br>single pulse<br>60<br>z= Zz He Pe jin) CTI<br>o a teet a Lu<br>40 \ Ry R><br>Sa g e |<br>ce (AN |<br>\ pal Wt a<br>20<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.015899 0.19942 0.23881 0.34593 0.036218 2.8E-3<br>τ i[s]: 1.4E-5 2.4E-4 1.8E-3 7.8E-3 0.1290993 2.085894<br>)<br>0 0.01<br>25 50 75 100 125 150 175 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>T C , CASE TEMPERATURE [°C] t p , PULSE WIDTH [s]<br>tot<br>P<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
> Figure 1. Power **temperature** ( _T_ vj ≤ 175°C)
Figure 2. Diode function ( _D_ = _t_ p/T)
**==> picture [236 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
120<br>Tj=25°C, IF = 40A<br>110 Tj=175°C, IF = 40A<br>ee ee<br>100<br>90<br>ee PYePP e y}<br>-re 80 foscS<br>70<br>ow | |<br>s x<br>60<br>| \ ioe|<br>ce ee<br>50<br>ee<br>ee<br>40<br>—<br>ee<br>oe 30<br>oe 1<br>20<br>10<br>0<br>0 250 500 750 1000 1250 1500 1750 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 3. Typical diode ( _V_ R=400V)
**==> picture [235 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.4<br>Tj=25°C, IF = 40A<br>Tj=175°C, IF = 40A<br>1.2 ae<br>1.0<br>2 > “y<br>= ‘<br>8 0.8 (<br>> t<br>/<br>0.6<br>=<br>0.4 Ay<br>:<br>in ea<br>0.2<br>0.0<br>0 250 500 750 1000 1250 1500 1750 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 4.
( _V_ R=400V)
6
IDW40E65D2
**==> picture [476 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
50 0<br>Tj=25°C, IF = 40A Tj=25°C, IF = 40A<br>45 Tj=175°C, IF = 40A Tj=175°C, IF = 40A<br>-2000<br>= een<br>40<br>= dc 7 a<br>4000<br>re e e<br>oa 35 ia 1 \<br>¢ = 6000<br>e {tie<br>30<br>oO | ye Ee<br>etry y<br>25 8000<br>: s PAA<br>OBL 20 eoJ tsx: |<br>0000<br>uwBL 15 AT: LZY| | tT dg5<br>-12000<br>10<br>so ty re<br>-14000<br>5<br>0 -16000<br>0 250 500 750 1000 1250 1500 1750 2000 0 250 500 750 1000 1250 1500 1750 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>I rrm<br>**----- End of picture text -----**<br>
Figure 5.
Figure 6.
( _V_ R=400V)
( _V_ R=400V)
**==> picture [474 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
120 2.50<br>Tj=25°C IF=20A<br>110 Tj=175°C IF=40A<br>2.25 IF=80A<br>100<br>90 2.00<br>KE 80 fs Lu<br>iu / xt 1.75<br>eo] | | |ff<br>70<br>oe ; 5<br>e 60 Q 1.50<br><x 50 | ge Ee<br>1.25<br>oO 40 e)<br>30 1.00<br>20<br>0.75<br>10<br><a<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 7.
Figure 8.
7
IDW40E65D2
**==> picture [146 x 65] intentionally omitted <==**
## Emitter�Controlled�Diode
## PG-TO247-3
8
Rev.�1.2,��2013-05-22
IDW40E65D2
**==> picture [146 x 65] intentionally omitted <==**
## Emitter�Controlled�Diode
**==> picture [38 x 40] intentionally omitted <==**
**----- Start of picture text -----**<br>
a b<br>a b<br>**----- End of picture text -----**<br>
t
**==> picture [169 x 60] intentionally omitted <==**
**==> picture [109 x 111] intentionally omitted <==**
9
Rev.�1.2,��2013-05-22
IDW40E65D2
## IDW40E65D2
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2013-03-14|Preliminarydata sheet|
|1.2|2013-05-22|IFSM|
## **Information**
## **Warnings**
endangered.
10
Updated at April 22, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →