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IDW40E65D1FKSA1
Fast / Ultrafast Diode, 650 V, 40 A, Single, 1.35 V, 77 ns, 320 A
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- Manufacturer: INFINEON
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:650V; Forward Current If(AV):40A; Diode Configuration:Single; Forward Voltage VF Max:1.35V; Reverse Recovery Time trr Max:77ns; Forward Surge Current Ifsm Ma
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: IDW40
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Single
- Forward Voltage Max: 1.35V
- Forward Surge Current: 320A
- Reverse Recovery Time: 77ns
- Average Forward Current: 40A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.753 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## Diode IDW40E65D1 IDW40E65D1 **Features:** ## **Applications:** **==> picture [359 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>technology<br>behaviour of key parameters<br>V F)<br>charge ( Q rr)<br>current ( I rrm)<br>temperature<br>ROHS compliant C<br> Lalngy,<br>ee<br>in inverters and motor drives fi<br>ys<br>supplies<br>1<br>2<br>3<br>**----- End of picture text -----**<br> |**Type**|**_V_rrm**|**_I_f**|**_V_f** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IDW40E65D1|650V|40A|1.35V|175°C|E40ED1|PG-TO247-3| 2 IDW40E65D1 **==> picture [146 x 65] intentionally omitted <==** Emitter�Controlled�Diode�Rapid�1�Series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3 Rev.�2.2,��2013-12-16 IDW40E65D1 **==> picture [146 x 65] intentionally omitted <==** ## Emitter�Controlled�Diode�Rapid�1�Series ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Repetitivepeak reverse voltage|_V_RRM||650|V| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||80.0<br>40.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A| |Diode surge non repetitive forward current<br>_T_C=25°C,_t_p=10.0ms,sinehalfwave|_I_FSM||320.0|A| |Powerdissipation_T_C=25°C|_P_tot||179.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |Diode thermal resistance,1)<br>junction - case|_R_th(j-c)|||0.84|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Diode forward voltage|_V_F|_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.32<br>1.28|1.70<br>-<br>-|V| |Reverse leakage current|_I_R|_V_R=650V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| 1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. Rev.�2.2,��2013-12-16 4 IDW40E65D1 **==> picture [146 x 65] intentionally omitted <==** Emitter�Controlled�Diode�Rapid�1�Series ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| ## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|77|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.87|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|17.5|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1520|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=200A/µs|-|129|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.49|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|6.9|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-300|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DiodeCharacteristic,at****_T_vj=175°C/125°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|110|-|ns| |Diode reverse recoverycharge|_Q_rr||-|2.36|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|27.3|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1320|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=125°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=200A/µs|-|163|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.04|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|10.4|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-600|-|A/µs| Rev.�2.2,��2013-12-16 5 ~~Emitter Controlled Diode Rapid 1 Series~~ IDW40E65D1 **==> picture [474 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 180 80<br>160<br>70<br>140<br>PX ET 60 ‘<br>120<br>S X B \ \<br>50<br>100<br>oN X<br>40<br>Q<br>SERRE:2 80<br>UNE<br>Peto “ : 30<br>60<br>© ia<br>20<br>40<br> TAT SaRaNe<br>10<br>20<br>PPFPeEN EEEErIN<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot IF<br>**----- End of picture text -----**<br> > Figure 1. Power **temperature** ( _T_ vj ≤ 175°C) Figure 2. Diode **temperature** ( _T_ vj ≤ 175°C) **==> picture [244 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 1 Th ooo<br>a a a<br>= a a<br>a a a ||<br>D=0.5<br>SNM<br>tu ee a rr ct<br>SSTmatiieaiaul 0.2 ||<br>0.1<br>2 nga ET<br>6 Life 0.05 i)<br>2 On ZF Lal 0.02<br>0.01<br>S$eMsee 0.1 single pulse<br>oe ll VOL AL<br>im ee ri ci)<br>I ce | | ||<br>7 APT erneg cePE<br>b RA<br>my ei ATM TIM VU) CTT<br>eM Ry Rp<br>4 -<br>e eeaeie a<br>A IT<br>te ste<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.015899 0.19942 0.23881 0.34593 0.036218 2.8E-3<br>τ i[s]: 1.9E-5 2.4E-4 1.9E-3 0.01162857 0.0912415 1.815212<br>(<br>0.01<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p PULSE WIDTH [s]<br>Figure 3. Diode transient thermal impedance as a<br>function of pulse width<br>( D = t p/T)<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> **==> picture [235 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 200 a<br>Tj=25°C, IF = 40A<br>180 R; | | TTjj=125°C, I=175°C, IFF = 40A = 40A } of |<br>160<br>‘ | [|]<br>140<br>BAY Pf ot fd<br>2<br>z 120 PSR EPyyy<br>MMs 100 eGRKB|<br>fe) x pS.<br>=O \ °<br>WW .<br>80<br>tH NN ~ xe :<br>60 Pf PRED preg<br>TTT ——<br>40<br>a<br>20<br>0<br>200 600 1000 1400 1800 2200 2600 3000<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br> Figure 4. ( _V_ R=400V) 6 IDW40E65D1 **==> picture [476 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 45<br>Tj=25°C, IF = 40A Tj=25°C, IF = 40A<br>Tj=125°C, IF = 40A Tj=125°C, IF = 40A<br>Tj=175°C, IF = 40A 40 Tj=175°C, IF = 40A<br>2.5<br>_ a _ eo >t [=<br>a u<br>=ee e e E 35 pt e 7 2 |e<br>ina . ia a aa<br>2.0 30<br>| | | | | Ud A let Le<br>f 25 a<br>e fea uw8 | ¥ 7 7<br>Lu foo) ob re<br>1.5<br>20<br>Lu / Q /<br>a 1.0 15<br>yo / B Lt | |<br>eee, 10<br>0.5<br>5 y} | | ft |<br>0.0 0<br>200 600 1000 1400 1800 2200 2600 3000 200 600 1000 1400 1800 2200 2600 3000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q I rrm<br>**----- End of picture text -----**<br> Figure 5. ( _V_ R=400V) Figure 6. ( _V_ R=400V) **==> picture [475 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 0 80<br>Tj=25°C, IF = 40A Tj=25°C<br>-250 Tj=125°C, IF = 40A Tj=175°C<br>a Tj=175°C, IF = 40A ee 70 eee<br>-500<br>a<br>|e ee ee<br>60<br>ho | | | dg<br>-750<br>= ys 50 LL<br>eRe <x<br>& 1000 . uo w<br>PPR2 \ \ _ oe)ye LL<br>© 1250 a 40 ;<br>Nee 1500 ‘|<br>o 30<br>ee ee:<br>ne 1750 eee<br>20<br>-2000<br>10<br>-2250<br>-2500 0<br>PPT PTS L he<br>200 600 1000 1400 1800 2200 2600 3000 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 7. Figure 8. ( _V_ R=400V) 7 IDW40E65D1 **==> picture [233 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 2.00<br>IF=10A<br>IF=20A<br>IF=40A<br>1.75 IF=60A<br>IF=80A<br>= |<br>=Lu 1.50 _<br>Oo<br><x<br>Kk<br>I<br>><br>Q 1.25<br>m4<br><x<br>o<br>1.000.75 an<br>0.50<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 9. 8 IDW40E65D1 **==> picture [146 x 65] intentionally omitted <==** Emitter�Controlled�Diode�Rapid�1�Series ## PG-TO247-3 9 Rev.�2.2,��2013-12-16 IDW40E65D1 Emitter�Controlled�Diode�Rapid�1�Series **==> picture [146 x 65] intentionally omitted <==** **==> picture [214 x 477] intentionally omitted <==** **----- Start of picture text -----**<br> v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t d(off) t f t d(on) t r t<br>v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>2% I C t<br>v CE (t)<br>t 2 t 4<br>E off [=] t 1∫ V CE x I C x d t E on [=] t 3∫ V CE x I C x d t 2% V CE t<br>t 1 t 2 t 3 t 4<br>**----- End of picture text -----**<br> **==> picture [145 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> a b<br>a b<br>t<br>**----- End of picture text -----**<br> **==> picture [142 x 89] intentionally omitted <==** **==> picture [118 x 150] intentionally omitted <==** **==> picture [9 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> 10 Rev.�2.2,��2013-12-16 IDW40E65D1 **==> picture [146 x 65] intentionally omitted <==** Emitter Controlled Diode Rapid 1 Series ## Revision History ## IDW40E65D1 Revision: 2013-12-16, Rev. 2.2 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |1.1|2013-03-13|Preliminarydata sheet| |2.1|2013-10-21|Final data sheet| |2.2|2013-12-16|New MarkingPattern| ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2, 2013-12-16 11
Updated at June 4, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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