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IDW30E65D1FKSA1
Standard Recovery Diode, 650 V, 30 A, Single, 1.35 V, 66 ns, 240 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:650V; Forward Current If(AV):30A; Diode Configuration:Single; Forward Voltage VF Max:1.35V; Reverse Recovery Time trr Max:66ns; Forward Surge Current Ifsm Ma
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: IDW30
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Single
- Forward Voltage Max: 1.35V
- Forward Surge Current: 240A
- Reverse Recovery Time: 66ns
- Average Forward Current: 30A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.706 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## Diode
IDW30E65D1
IDW30E65D1
**Features:**
## **Applications:**
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A<br>technology<br>behaviour of key parameters<br>V F)<br>charge ( Q rr)<br>current ( I rrm)<br>temperature<br>ROHS compliant C<br> Lalngy,<br>ee<br>in inverters and motor drives fi<br>ys<br>supplies<br>1<br>2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_rrm**|**_I_f**|**_V_f** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IDW30E65D1|650V|30A|1.35V|175°C|E30ED1|PG-TO247-3|
2
IDW30E65D1
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Emitter�Controlled�Diode�Rapid�1�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
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## Emitter�Controlled�Diode�Rapid�1�Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Repetitivepeak reverse voltage|_V_RRM||650|V|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||60.0<br>30.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A|
|Diode surge non repetitive forward current<br>_T_C=25°C,_t_p=10.0ms,sinehalfwave|_I_FSM||240.0|A|
|Powerdissipation_T_C=25°C|_P_tot||142.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|Diode thermal resistance,1)<br>junction - case|_R_th(j-c)|||1.06|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Diode forward voltage|_V_F|_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.32<br>1.28|1.70<br>-<br>-|V|
|Reverse leakage current|_I_R|_V_R=650V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
Rev.�2.2,��2013-12-16
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IDW30E65D1
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Emitter�Controlled�Diode�Rapid�1�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1000A/µs|-|66|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.73|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1370|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=200A/µs|-|115|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.45|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|5.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-660|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DiodeCharacteristic,at****_T_vj=175°C/125°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1000A/µs|-|105|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.83|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|25.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1000|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=125°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=200A/µs|-|154|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.98|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|9.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-490|-|A/µs|
Rev.�2.2,��2013-12-16
5
IDW30E65D1
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150 60<br>140<br>130<br>50<br>120<br>110<br>a ee esOe<br>100 40<br>e | o\P PP ye [iN] |<br>90<br>80<br>p FERRE SN<br>30<br>70<br>a Pt | UN fe Pf fl UK<br>60<br>g i eeee<br>50 20<br>a 2<br>40<br>30<br>10<br>20<br>10 NS feNS<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Diode forward current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( T vj ≤ 175°C)<br>200<br>Tj=25°C, IF = 30Aj=25°C, IF = 30A=25°C, IF = 30AF = 30A = 30A<br>180 Tj=125°C, IF = 30Aj=125°C, IF = 30A=125°C, IF = 30AF = 30A = 30A<br>1 Tj=175°C, IF = 30Aj=175°C, IF = 30A=175°C, IF = 30AF = 30A = 30A<br>= SA EIA AIM ff<br>PE EC ee Fei<br>160140<br>D=0.5<br>S SS Tiina 2 140 RAP fF | fp<br>< PT ee 0.2 Baill uw a<br>0.1<br>2 ee? see ei F 120 eee<br>eT A 0.05 I & 7<br>0.02<br>Z YY es 3 100 Koa<br>: isis 0.01 : a<br>0.1<br>=PeeE AVP Ni | eer LUT BAS yeeeee<br>single pulse 80<br>ee eee cg) ee ealae<br>Lu =, (ee uw<br>Zz YT TAT TTT or PN pe<br>wi err Agere TUT cE ern 60 | _<br>Zz V7 a ee LHI 40 Pf ff ——>——<br>=SCO GHG {iil & |<br>LATTErT) | TnL]beet lll 200 PfPf}Fffpfd Fffpfd fd<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.030888 0.23348 0.33605 0.40625 0.04654 2.9E-3<br>τ i[s]: 2.3E-5 2.2E-4 1.7E-3 0.0104375 0.07911442 1.80538<br>0.01 {Lda 0 Pf}Fffpfd fpfd<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 200 600 1000 1400 1800 2200 2600 3000<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>P tot IF<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
200<br>Tj=25°C, IF = 30Aj=25°C, IF = 30A=25°C, IF = 30AF = 30A = 30A<br>180 Tj=125°C, IF = 30Aj=125°C, IF = 30A=125°C, IF = 30AF = 30A = 30A<br>Tj=175°C, IF = 30Aj=175°C, IF = 30A=175°C, IF = 30AF = 30A = 30A<br>ff<br>Fei<br>2 160140 RAP fF | fp<br>uw a<br>F 120 eee<br>& 7<br>3 100 Koa<br>: a<br>BAS yeeeee<br>80<br>uw<br>or PN pe<br>60 | _<br>40 Pf ff ——>——<br>& |<br>200 PfPf}Fffpfd<br>200 600 1000 1400 1800 2200 2600 3000<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 3. Diode function ( _D_ = _t_ p/T)
Figure 4. Typical diode ( _V_ R=400V)
6
IDW30E65D1
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**----- Start of picture text -----**<br>
2.50 35<br>Tj=25°C, IF = 30A Tj=25°C, IF = 30A<br>2.25 Tj=125°C, IF = 30A Tj=125°C, IF = 30A<br>Tj=175°C, IF = 30A Tj=175°C, IF = 30A<br>30<br>2.00<br>19)Bf epee)weet uw& 25 ‘< aaa<<br>1.75<br>na < oc ,<br><x ” a c aa<br>1.50<br>pep 20 ere<br>oe eee<br>1.25<br>15<br>PIECE la<br>oe 1.00 : ow /<br>Lu Lu<br>0.75<br>e | ||i 10<br>ff,> 0.50 tTea| >ff<br>5<br>0.25<br>0.00 0<br>200 600 1000 1400 1800 2200 2600 3000 200 600 1000 1400 1800 2200 2600 3000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q I rrm<br>**----- End of picture text -----**<br>
Figure 5.
( _V_ R=400V)
Figure 6.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
0 60<br>Tj=25°C, IF = 30A Tj=25°C<br>-200 Tj=125°C, IF = 30A Tj=175°C<br>F Tj=175°C, IF = 30A t| ed<br>50<br>-400<br>a be<br>. Pt | tt |<br>-600 SS ee<br>zeit | | tt | de<br>40<br>eA) -800 te Ep<br>ee VON ag<br>fo} YO<br>SiN<br>1000 30<br>a ET | ps Ey<br>,<br>oO [Cee UE<br>: 1200 , x /<br>‘.<br>(o) Mf Te fe<br>20<br>Pi o\N-- /<br>1400<br>SNS | 8 |<br>-1600<br>ety 10 ER<br>-1800 PPK) Pe<br>Jo L e<br>-2000 0<br>pi | | | V<br>200 600 1000 1400 1800 2200 2600 3000 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 7.
Figure 8.
( _V_ R=400V)
7
IDW30E65D1
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2.00<br>IF=7,5A<br>IF=15A<br>IF=30A<br>1.75 IF=45A<br>IF=60A<br>Ww 1.50 —<br>Oo<br><x<br>Kk<br>I<br>><br>Q 1.25<br>m4<br><x<br>o<br>° 1.00 _<br>0.75<br>0.50<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 9.
8
IDW30E65D1
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Emitter�Controlled�Diode�Rapid�1�Series
## PG-TO247-3
9
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IDW30E65D1
Emitter�Controlled�Diode�Rapid�1�Series
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a b<br>a b<br>t<br>**----- End of picture text -----**<br>
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CC<br>**----- End of picture text -----**<br>
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Emitter Controlled Diode Rapid 1 Series
## Revision History
## IDW30E65D1
Revision: 2013-12-16, Rev. 2.2
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2013-03-13|Preliminarydata sheet|
|2.1|2013-10-21|Final data sheet|
|2.2|2013-12-16|New MarkingPattern|
## We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.2, 2013-12-16
11
Updated at April 22, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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