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IDP20E65D2XKSA1
Fast / Ultrafast Diode, 650 V, 40 A, Single, 2.2 V, 32 ns, 120 A
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- Manufacturer: INFINEON
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-220
- Diode Configuration: Single
- Forward Voltage Max: 2.2V
- Forward Surge Current: 120A
- Reverse Recovery Time: 32ns
- Average Forward Current: 40A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.415 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Diode IDP20E65D2 IDP20E65D2 **==> picture [461 x 258] intentionally omitted <==** **----- Start of picture text -----**<br> Features:<br>A<br>* Qualified according to JEDEC for target applications<br>¢ 650 V Emitter Controlled technology<br>¢ Fast recovery<br>* Soft switching<br>« Low reverse recovery charge<br>* Low forward voltage and stable over temperature<br>¢ 175 °C junction operating temperature<br>* Easy paralleling<br>¢ Pb-free lead plating; ROHS compliant C<br>Applications: C<br>* Boost diode in CCM PFC<br>C<br>A<br>**----- End of picture text -----**<br> |**Type**|**_V_rrm**|**_I_f**|**_V_f** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IDP20E65D2|650V|20A|1.6V|175°C|E20ED2|PG-TO220-2-1| 2 IDP20E65D2 **==> picture [146 x 65] intentionally omitted <==** ## Emitter�Controlled�Diode ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 Rev.�2.1,��2014-09-18 IDP20E65D2 **==> picture [146 x 65] intentionally omitted <==** ## Emitter�Controlled�Diode ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Repetitivepeakreversevoltage,_T_vj≥25°C|_V_RRM||650|V| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||40.0<br>20.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A| |Diode surge non repetitive forward current<br>_T_C=25°C,_t_p=8.3ms,sinehalfwave|_I_FSM||120.0|A| |Powerdissipation_T_C=25°C|_P_tot||120.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |Diode thermal resistance,1)<br>junction - case|_R_th(j-c)|||1.25|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Diode forward voltage|_V_F|_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.60<br>1.65|2.20<br>-|V| |Reverse leakage current|_I_R|_V_R=650V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.0<br>500.0|40.0<br>-|µA| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH| 1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. Rev.�2.1,��2014-09-18 4 IDP20E65D2 Emitter�Controlled�Diode **==> picture [146 x 65] intentionally omitted <==** ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IKW50N65H5|-|32|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.25|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|12.2|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-900|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=400A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IKW50N65H5|-|43|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.19|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|6.3|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-420|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DiodeCharacteristic,at****_T_vj=175°C/125°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IKW50N65H5|-|55|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.58|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-650|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=125°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=400A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IKW50N65H5|-|61|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.38|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|9.3|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-500|-|A/µs| Rev.�2.1,��2014-09-18 5 IDP20E65D2 **==> picture [476 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>110<br>1<br>100 2x 2 A<br>Ww |<br>wae O |ce||<br>90<br>== Zz 9||<br>D=0.5<br>80<br>6 P| NEF < RE a<br>0.2<br>EN 2 Nee |<br>< 70 ce eACOT 0.1<br>0.05<br>60<br>ra) y 0.02<br>: ‘ eee Il<br>Wwse 50 fo FfKT LB= 0.1 oeAeDay / el 0.01 CECo i<br>Oo 40 \ aD PTAA eeee e single pulse | BBIIil|<br>30 ra LL TTT ET |<br>\ Z A Re |||<br>20<br>~ UAC UTI TU rete trol<br>10 i: 1 2 3 4 5 6<br>ri[K/W]: 0.0222558 0.288855 0.383376 0.52332 0.0305613 1.4E-3<br>e e τ i[s]: 2.3E-5 1.4E-4 9.5E-4 5.2E-3 0.07353007 2.05804<br>0 ee 0.01 EO|<br>25 50 75 100 125 150 175 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>T C , CASE TEMPERATURE [°C] t p , PULSE WIDTH [s]<br>Figure 1. Power dissipation as a function of case Figure 2. Diode transient thermal impedance as a<br>temperature function of pulse width<br>( T vj ≤ 175°C) ( D = t p/T)<br>90 0.8<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Eo Tj=175°C, IF = 20A ) Tj=175°C, IF = 20A<br>80<br>| 0.7 Ed<br>= ‘ 2<br>é 70 : im 0.6<br>Ww ‘, ) eet<br>Kk 60 ‘, I Pas 7<br>0.5<br>50<br>9 ~s O 0.4<br>40<br>td im<br>aaees Lu 0.3 eeePt<br>30<br>0.2<br>20<br>t P| | ft yf a 0.1 yf fof |<br>10<br>0 0.0<br>0 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 2500 3000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>tot<br>P<br>c)th(j-<br>Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> Figure 3. Typical diode ( _V_ R=400V) Figure 4. Typical of diode ( _V_ R=400V) 6 IDP20E65D2 **==> picture [476 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 30 0<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=175°C, IF = 20A Tj=175°C, IF = 20A<br>x 25 o mn -250<br>= a =s<br>yfi -Leet <<br>= 20 -500<br>oO “ ia xo)a \<br>>=<br>_<br>,<br>15 -750<br>5 © . ~~<br>O _ + | oO© \ a<br>/’ ym ~~ N<br>uw / oO ‘\<br>10 1000<br>fe LL 8 a<br>uw ! so)<br>5 -1250<br>0 -1500<br>0 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 2500 3000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>I rrm<br>**----- End of picture text -----**<br> Figure 5. Typical function ( _V_ R=400V) Figure 6. ( _V_ R=400V) **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 40 2.50<br>Tj=25°C IF=10A<br>Tj=175°C IF=20A<br>35 2.25 IF=40A<br>30 2.00<br>= uw<br>Zzim: 25 | EFA Oo7<x 1.75 Sara<br>D> oO<br>oO ><br>:ef 20 LKf :Q 1.50 epee<br>I<br>xtS 15 op)Fo fea 1.25 Pe<br>re LL<br>10 1.00<br>5 0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br> Figure 7. Figure 8. 7 IDP20E65D2 **==> picture [146 x 65] intentionally omitted <==** ## Emitter�Controlled�Diode ## PG-TO220-2-1 8 Rev.�2.1,��2014-09-18 IDP20E65D2 Emitter�Controlled�Diode **==> picture [146 x 65] intentionally omitted <==** **==> picture [214 x 477] intentionally omitted <==** **----- Start of picture text -----**<br> v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t d(off) t f t d(on) t r t<br>v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>2% I C t<br>v CE (t)<br>t 2 t 4<br>E off [=] t 1∫ V CE x I C x d t E on [=] t 3∫ V CE x I C x d t 2% V CE t<br>t 1 t 2 t 3 t 4<br>**----- End of picture text -----**<br> **==> picture [145 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> a b<br>a b<br>t<br>**----- End of picture text -----**<br> **==> picture [142 x 89] intentionally omitted <==** **==> picture [118 x 150] intentionally omitted <==** **==> picture [9 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> 9 Rev.�2.1,��2014-09-18 IDP20E65D2 Emitter Controlled Diode **==> picture [146 x 65] intentionally omitted <==** ## Revision History ## IDP20E65D2 Revision: 2014-09-18, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-09-18 Final data sheet ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com ## Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1, 2014-09-18 10
Updated at June 4, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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