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IDP18E120XKSA1
Standard Recovery Diode, 1.2 kV, 31 A, Single, 2.15 V, 195 ns, 78 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Standard Recovery Rectifier Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-220
- Diode Configuration: Single
- Forward Voltage Max: 2.15V
- Forward Surge Current: 78A
- Reverse Recovery Time: 195ns
- Average Forward Current: 31A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.676 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
**IDP18E120** ## **Fast Switching Diode** ## **Feature s** - 1200 V diode technology - Fast recovery - Soft switching - Low reverse recovery charge - Low forward voltage |_V_RRM|1200|V| |---|---|---| |_I_F|18|A| |_V_F|1.65|V| |_T_jmax|150|°C| - Easy paralleling - Pb-free lead plating; RoHS compliant - Halogen-free according to IEC61249-2-21 - Qualified according to JEDEC for target applications |**Type**|**Package**|**Ordering Code**|**Marking**|**Pin 1**|**PIN 2**|**PIN 3**| |---|---|---|---|---|---|---| |IDP18E120|PG-TO220-2|-|D18E120|C|A|-| **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified |j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**<br>a|j = 25 °C, unless otherwise specified<br>**Value**<br>|**Unit**| |---|---|---|---| |Repetitive peak reverse voltage|_V_RRM<br>|1200<br>|V| |Continous forward current<br>_T_C=25°C<br>_T_C=90°C|_I_F<br>Pf|31<br>19.8<br>Pf|A| |Surge non repetitive forward current<br>_T_C=25°C,_t_p=10 ms, sine halfwave|_I_FSM|78|| |Maximum repetitive forward current<br>_T_C=25°C,_t_plimited by_T_jmax,_D_=0.5|_I_FRM|47|| |Power dissipation<br>_T_C=25°C<br>_T_C=90°C|_P_tot|113<br>54|W| |Operating and storage temperature|_T_j ,_T_stg|-55...+150|°C| |Soldering temperature<br>wavesoldering,1.6mm (0.063 in.) from case for 10s|j ,stg<br>_T_S<br>ef|260<br>ef|°C| Rev.2. 3 200 9 -0 8 - 19 Page 1 **IDP18E120** ## **Thermal Characteristics** |**Thermal Characteristics**<br>**Parameter**<br>**Characteristics**|**Symbol**|**min.**|**Values**<br>**typ.**|**max.**|**Unit**| |---|---|---|---|---|---| |Thermal resistance, junction - case|_R_thJC|-|-|1.1|K/W| |Thermal resistance, junction - ambient, leaded|_R_thJA|-|-|62|| |SMD version, device on PCB:<br>@ min. footprint<br>@ 6 cm2cooling area1)|_R_thJA|-<br>-|-<br>35|62<br>-|| |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified||| |---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**| |||**min.**|**typ.**|**max.**|| |**Static Characteristics**|||||| |Reverse leakage current|_I_R||||µA| |_V_R=1200V,_T_j=25°C||-|-|100|| |_V_R=1200V,_T_j=150°C||-|-|1400|| |Forward voltage drop|_V_F||||V| |_I_F=18A,_T_j=25°C||-|1.65|2.15|| |_I_F=18A,_T_j=150°C||-|1.7|-|| 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2. 3 200 9 -0 8 - 19 Page 2 **IDP18E120** |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**Dynamic Characteristics**|||||| |Reverse recovery time<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=25°C<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=125°C<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=150°C|_t_rr|-<br>-<br>-|195<br>280<br>300|-<br>-<br>-|ns| |Peak reverse current<br>_V_R=800V,_I_F= 18 A, d_i_F/d_t_=800A/µs,_T_j=25°C<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=125°C<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=150°C|_I_rrm|-<br>-<br>-|20.2<br>24.4<br>25.3|-<br>-<br>-|A| |Reverse recovery charge<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=25°C<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=125°C<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=150°C|_Q_rr|-<br>-<br>-|1880<br>3200<br>3540|-<br>-<br>-|nC| |Reverse recovery softness factor<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=25°C<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=125°C<br>_V_R=800V,_I_F=18A, d_i_F/d_t_=800A/µs,_T_j=150°C|_S_|-<br>-<br>-|5.5<br>6.6<br>6.7|-<br>-<br>-|| Rev.2. 3 200 9 -0 8 - 19 Page 3 **IDP18E120** ## **1 Power dissipation** _P_ tot = _f_ ( _T_ C) parameter: Tj ≤ 150°C **==> picture [232 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br> W<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100 °C 150<br>T C<br>tot<br>P<br>**----- End of picture text -----**<br> ## **3 Typ. diode forward current** _I_ F = _f_ ( _V_ F) **==> picture [227 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 54<br>A<br>-55°C<br>25°C<br>42<br>100°C<br>150°C<br>36<br>30<br>24<br>18<br>12<br>6<br>0<br>0 0.5 1 1.5 2 V 3<br>V F<br>I F<br>**----- End of picture text -----**<br> ## **2 Diode forward current** _I_ F = f( _T_ C) parameter: _T_ j≤ 150°C **==> picture [232 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br> A<br>25<br>20<br>15<br>10<br>5<br>0<br>25 50 75 100 °C 150<br>T C<br>I F<br>**----- End of picture text -----**<br> ## **4 Typ. diode forward voltage** _V_ F = _f_ ( _T_ j) **==> picture [231 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 2.6<br>V<br>36A<br>2.2<br>2<br>18A<br>1.8<br>1.6<br>9A<br>1.4<br>1.2<br>-60 -20 20 60 100 °C 160<br>T<br>j<br>F<br>V<br>**----- End of picture text -----**<br> 200 9 -0 8 - 19 Rev.2. 3 Page 4 **IDP18E120** ## **5 Typ. reverse recovery time** _t_ rr = _f_ (d _i_ F/d _t_ ) parameter: _V_ R = 800V, _T_ j = 125°C **==> picture [234 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>ns<br>800<br>36A<br>18A<br>700 9A<br>600<br>500<br>400<br>300<br>200<br>100<br>200 300 400 500 600 700 800 A/µs 1000<br>d i F/d t<br>t rr<br>**----- End of picture text -----**<br> ## **7 Typ. reverse recovery current** _I_ rr = _f_ (d _i_ F/d _t_ ) parameter: _V_ R = 800V, _T_ j = 125°C **==> picture [234 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>A<br>36A<br>18A<br>9A<br>20<br>15<br>10<br>5<br>200 300 400 500 600 700 800 A/µs 1000<br>d i F/d t<br>I rr<br>**----- End of picture text -----**<br> ## **6 Typ. reverse recovery charge** _Q_ rr= _f_ (d _i_ F/d _t_ ) parameter: _V_ R = 800V, _T_ j = 125 °C **==> picture [233 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 4600<br>nC<br>4200 36A<br>4000<br>3800<br>3600<br>3400 18A<br>3200<br>3000<br>2800<br>2600<br>9A<br>2400<br>2200<br>2000<br>1800<br>200 300 400 500 600 700 800 A/µs 1000<br>d i F/d t<br>rr<br>Q<br>**----- End of picture text -----**<br> ## **8 Typ. reverse recovery softness factor** S = f(d _i_ F/d _t_ ) parameter: _V_ R = 800V, _T_ j = 125°C **==> picture [233 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 18<br>14 36A<br>18A<br>9A<br>12<br>10<br>8<br>6<br>4<br>2<br>200 300 400 500 600 700 800 A/µs 1000<br>d i F/d t<br>S<br>**----- End of picture text -----**<br> Rev.2. 3 2007-0 8 - 19 Page 5 **IDP18E120** ## **9 Max. transient thermal impedance** _Z_ thJC = _f_ ( _t_ p) parameter : _D_ = _t_ p/ _T_ **==> picture [235 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1 IDP18E120<br>K/W<br>10 0<br>10 -1<br>10 -2<br>D = 0.50<br>0.20<br>10 -3 0.10<br>0.05<br>single pulse<br>0.02<br>10 -4 0.01<br>10 -5<br>10 [-7 ] 10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>t<br>p<br>thJC<br>Z<br>**----- End of picture text -----**<br> Rev.2. 3 200 9 -0 8 - 19 Page 6 **IDP 18 E120** **==> picture [425 x 661] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220-2<br>**----- End of picture text -----**<br> Rev.2. 3 200 9 -0 8 - 19 Page 7 **IDP 18 E120** Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2. 3 200 9 -0 8 - 19 Page 8
Updated at April 22, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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