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IDP08E65D2XKSA1
Standard Recovery Diode, 650 V, 15 A, Single, 1.6 V, 30 ns, 100 A
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- Manufacturer: INFINEON
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:650V; Forward Current If(AV):15A; Diode Configuration:Single; Forward Voltage VF Max:1.6V; Reverse Recovery Time trr Max:30ns; Forward Surge Current Ifsm Max:
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: IDP08
- Qualification: -
- Diode Case Style: TO-220
- Diode Configuration: Single
- Forward Voltage Max: 1.6V
- Forward Surge Current: 100A
- Reverse Recovery Time: 30ns
- Average Forward Current: 15A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.865 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## Diode
IDP08E65D2
IDP08E65D2
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Features:<br>A<br>* Qualified according to JEDEC for target applications<br>¢ 650 V Emitter Controlled technology<br>¢ Fast recovery<br>* Soft switching<br>« Low reverse recovery charge<br>* Low forward voltage and stable over temperature<br>¢ 175 °C junction operating temperature<br>* Easy paralleling<br>¢ Pb-free lead plating; ROHS compliant C<br>Applications: C<br>* Boost diode in CCM PFC<br>C<br>A<br>**----- End of picture text -----**<br>
|**Type**|**_V_rrm**|**_I_f**|**_V_f** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IDP08E65D2|650V|8A|1.6V|175°C|E08ED2|PG-TO220-2-1|
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IDP08E65D2
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## Emitter�Controlled�Diode
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
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IDP08E65D2
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## Emitter�Controlled�Diode
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Repetitivepeak reverse voltage|_V_RRM||650|V|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||16.0<br>8.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||24.0|A|
|Diode surge non repetitive forward current<br>_T_C=25°C,_t_p=8.3ms,sinehalfwave|_I_FSM||60.0|A|
|Powerdissipation_T_C=25°C|_P_tot||56.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|Diode thermal resistance,1)<br>junction - case|_R_th(j-c)|||2.69|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Diode forward voltage|_V_F|_I_F=8.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.60<br>1.65|2.30<br>-|V|
|Reverse leakage current|_I_R|_V_R=650V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>2000.0|µA|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
Rev.�2.1,��2013-12-16
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IDP08E65D2
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## Emitter�Controlled�Diode
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=8.0A,<br>_di_F_/dt_=1000A/µs|-|23|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.11|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-3300|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=8.0A,<br>_di_F_/dt_=200A/µs|-|40|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.08|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|2.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1300|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DiodeCharacteristic,at****_T_vj=175°C/125°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=8.0A,<br>_di_F_/dt_=1000A/µs|-|30|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.20|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2200|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=125°C,<br>_V_R=400V,<br>_I_F=8.0A,<br>_di_F_/dt_=200A/µs|-|58|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.13|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|3.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2200|-|A/µs|
Rev.�2.1,��2013-12-16
5
IDP08E65D2
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60<br>— a 0 ee<br>50 \ Y<br>Smee 1<br>_ \ 2SEHRCESHHH Aerra Ill D=0.5 HEHIlHi<br>== Zz< PRP/MPe) 7 0.2 CC<br>40 0.1<br>5 YA A |<br>0.05<br>E \ F a ee ea SUT TTI FTTH<br>0.02<br>30 \ W ape 0.01 ff}<br>2 CI CTT<br>single pulse<br>0.1<br>= 6eHEeo e TT<br>) Z er eer<br>o 20 \ uw LTPTT TT Tt<br>- 72)Z e e eee eel<br>CAME<br>Fe 720) *_ ||]<br>10<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.054405 0.4186 1.3026 0.83954 0.07293 2.1E-3<br>τ i[s]: 1.3E-5 1.3E-4 6.5E-4 4.7E-3 0.05512947 2.016515<br>0 Pry PK 0.01 SAU ELAM Ec TIME Ie |<br>25 50 75 100 125 150 175 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>T C , CASE TEMPERATURE [°C] t p , PULSE WIDTH [s]<br>Figure 1. Power dissipation as a function of case Figure 2. Diode transient thermal impedance as a<br>temperature function of pulse width<br>( T vj ≤ 175°C) ( D = t p/T)<br>80 0.30<br>Tj=25°C, IF = 8A Tj=25°C, IF = 8A<br>Tj=175°C, IF = 8A Tj=175°C, IF = 8A<br>Et<br>70<br>| fe<br>0.25<br>= 3<br>£ 60 WW<br>0.20<br>-<br>> 50 . {<br>40 0.15<br>Py ALLELE<br>30<br>PWT fe<br>0.10<br>> 20 PNAS eS] uw<br>0.05<br>ELE EP *<br>10<br>0 0.00<br>0 500 1000 1500 2000 2500 3000 3500 4000 0 500 1000 1500 2000 2500 3000 3500 4000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>tot<br>P<br>c)th(j-<br>Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 3.
( _V_ R=400V)
Figure 4.
( _V_ R=400V)
6
IDP08E65D2
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**----- Start of picture text -----**<br>
30 es 0 ss<br>Tj=25°C, IF = 8A Tj=25°C, IF = 8A<br>Tj=175°C, IF = 8A Tj=175°C, IF = 8A<br>-1000<br>z 25 7<br>-<br>WW . ndx= 2000<br>Pa5 20 a4 J re) \<br>7 3000<br>(aa ’ “ ocfe) NSN<br>> irate<br>15<br>x<br>: a PPK<br>OPill on oO 4000 ~iN<br>10<br>ow mai ZO s<br>ra) ZZ iyaS) 5000 \<br>mf<br>5<br>-6000<br>0 -7000<br>0 500 1000 1500 2000 2500 3000 3500 4000 0 500 1000 1500 2000 2500 3000 3500 4000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>I rrm<br>**----- End of picture text -----**<br>
Figure 5. Typical function ( _V_ R=400V)
Figure 6.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
20 2.50<br>Tj=25°C IF=4A<br>18 Tj=175°C IF=8A<br>16 p tt 2.25 IF=16A<br>2.00<br>ft de) P e<br>14<br>Zzim Oo<x 1.75<br>12<br>pe | | | fi ]8<br>i 3<br>3><br>10 Q 1.50<br><x<br>8<br>e {| | | oF ye 1.25 eet<br>re LL<br>6<br>1.00<br>4<br>0.75<br>2 a ae eee<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 7.
Figure 8.
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IDP08E65D2
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## Emitter�Controlled�Diode
## PG-TO220-2-1
8
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IDP08E65D2
Emitter�Controlled�Diode
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## Emitter Controlled Diode
## Revision History
## IDP08E65D2
Revision: 2013-12-16, Rev. 2.1
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2013-03-13|Preliminarydata sheet|
|2.1|2013-12-16|New MarkingPattern|
|2.2|2013-12-16|Value VFmax limit accordingBE test|
## We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1, 2013-12-16
10
Updated at April 22, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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