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IDFW80C65D1XKSA1
Standard Recovery Diode, 650 V, 74 A, Dual Common Cathode, 1.7 V, 73 ns, 320 A
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- Manufacturer: INFINEON
- Product type: Standard Recovery Rectifier Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 1.7V
- Forward Surge Current: 320A
- Reverse Recovery Time: 73ns
- Average Forward Current: 74A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.87 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IDFW80C65D1 ## **Features:** **==> picture [57 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> V F)<br>charge ( Q rr)<br>current ( I rrm)<br>**----- End of picture text -----**<br> **==> picture [67 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> A1 A2<br>C<br>**----- End of picture text -----**<br> **==> picture [96 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Fully isolated package TO-247<br>**----- End of picture text -----**<br> |**Type**|**_V_rrm**|**_I_f**|**_V_f** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IDFW80C65D1|650V|2x 40A|1.45V|175°C|C80ED1|PG-TO247-3-AI| Datasheet www.infineon.com 2020-09-25 IDFW80C65D1 **==> picture [86 x 38] intentionally omitted <==** ## Emitter�Controlled�Diode�Rapid�1�Advanced�Isolation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistances (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 V�2.2 2020-09-25 Datasheet IDFW80C65D1 **==> picture [86 x 38] intentionally omitted <==** ## Emitter�Controlled�Diode�Rapid�1�Advanced�Isolation ## **Maximum�Ratings�(per�leg)** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Repetitivepeakreversevoltage,_T_vj≥25°C|_V_RRM||650|V| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C|_I_F||74.0<br>59.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A| |Diode surge non repetitive forward current<br>_T_h=25°C,_t_p=10.0ms,sinehalfwave|_I_FSM||320.0|A| |Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||112.0<br>82.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| |IsolationvoltageRMS,_f_=50/60Hz,_t_=1min1)|_V_isol||2500|V| ## **Thermal�Resistances�(per�leg)** |**ThermalResistances(perleg)**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |Diode thermal resistance,2)<br>junction - heatsink|_R_th(j-h)||-|1.14|1.34|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W| ## **Electrical�Characteristics�(per�leg),�at�Tvj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Diode forward voltage|_V_F|_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V| |Reverse leakage current3)|_I_R|_V_R=650V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1200|40<br>-|µA| > 1) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing. 2) At force on body F = 500N, Ta = 25°C 3) Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg. 3 V�2.2 2020-09-25 Datasheet IDFW80C65D1 **==> picture [86 x 38] intentionally omitted <==** ## Emitter�Controlled�Diode�Rapid�1�Advanced�Isolation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristics�(per�leg),�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=820A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IKW40N65ES5.|-|73|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.10|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|23.5|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1500|-|A/µs| ## **Switching�Characteristics�(per�leg),�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DiodeCharacteristic,at****_T_vj=150°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=820A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IKW40N65ES5.|-|120|-|ns| |Diode reverse recoverycharge|_Q_rr||-|2.62|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|36.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1250|-|A/µs| V�2.2 2020-09-25 Datasheet 4 IDFW80C65D1 **==> picture [482 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 120 90<br>110<br>80<br>100<br>70<br>90 eeIN eee<br>EP NE de ER<br>80 60<br>Zz =<br>ke<br>70<br>ef NX NK<br>50<br>7)<br>SP oN TE »<br>60<br>a \ a<br>d a ree<br>40<br>-ew 50 | | \ | 8= \<br>PP INE ye ENN<br>40 30<br>30<br>20<br>TN<br>20<br>10<br>10<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T h , HEATSINK TEMPERATURE [°C] T h , HEATSINK TEMPERATURE [°C]<br>Figure 1. Power dissipation per leg as a function of Figure 2. Diode forward current per leg as a function<br>heatsink temperature heatsink temperature<br>( T vj 175°C) ( T vj 175°C)<br>180<br>1 T vj I F<br>e s Tol —— T vj = 150°C, I F =40A<br>> Ce S U CeCeTTTRSCTI TMTbam CCTTeeCC 160 |) | ras =a ]<br>= KR — \<br>x HT eS THT HTT 140 NY<br>0.1<br>D = 0.5<br>QaWwZ S 0SRSeSce Sn| Seaacyace2 c S aet eel 0.2 0 aa| uwS 120 Po) PSL_~— fF |<br>0.1<br>= ai SSAAC, SUNT<br>0.01 0.05 100<br>0.02<br>wA||O<br>i 0.01<br>80<br>x | 0 | -—<br>a single pulse cr _——<br>0.001<br>Si7) Eeeoon AUACo Co Co co oh 8yO> 60 ff)<br>Zz n C ee Pl) =<br>40<br>< 1E-4 CoA GHG mnt Py fff |<br>20<br>i: 1 2 3 4 5 6 7<br>ri[K/W]: 0.014102 0.20405 0.25828 0.2365 0.33792 0.20262 0.017193<br>τ i[s]: 2.6E-5 3.0E-4 2.7E-3 0.022941 0.288184 1.292329 18.70911<br>1E-5 —— ee | 0 Pf} tf |<br>1E-8 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 400 500 600 700 800 900 1000<br>t p , PULSE WIDTH [s] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>P tot IF<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 3. Diode a ( _D_ = _t_ p/T) Figure 4. Typical function ( _V_ R=400V) Datasheet 5 2020-09-25 IDFW80C65D1 **==> picture [477 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5 ee | 45 |<br>— T vj =25°C, I F =40A — T vj =25°C, I F =40A<br>m= T vj =150°C, I F =40A ——— T vj =150°C, I F =40A<br>a 40<br>3.0<br>nl — _ -<br>= i 35 -<br>Ww -<br>2.5<br>: - nee<br>30<br>7 a) 7<br>O oO 7<br>: 2.0 Beare : ;<br>25<br>ff ff =<br>© 3 20 aa<br>1.5<br>WwW Ww<br>7p) 7)<br>15<br>: ee eee<br>y 1.0 ee ee Ww<br>10<br>Eee "<br>0.5<br>5<br>0.0 0<br>400 500 600 700 800 900 1000 400 500 600 700 800 900 1000<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 5. Typical reverse recovery charge per leg as a Figure 6. Typical peak reverse recovery current per<br>function of diode current slope as a function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 es | 120<br>— T vj =25°C, I F =40A — T vj =25°C /<br>-250 —- T vj =150°C, I F =40A —- T vj = 150°C /<br>= /<br>100<br><, -500<br>ge | TT |<br>O -750 PAN x<br>80<br>Zz<br><x NX<br>r2 -1000 | w<br>LL N wa<br>E -1250 —— O 60<br>< \<br>-1500<br>pS: /<br>oOw e)LL 40 /<br>ra: -1750 PE EIN "<br>je) -2000 \ |<br>20<br>-2250<br>pt | ft tt Y/<br>eA<br>-2500 0<br>400 500 600 700 800 900 1000 0.0 0.5 1.0 1.5 2.0 2.5<br>dI F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>rr<br>Q I rrm<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 7. Figure 8. **slope** ( _V_ R=400V) 6 Datasheet 2020-09-25 IDFW80C65D1 **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 2.25<br>— I F =20A<br>—- I F =40A<br>--- I F =80A<br>2.00<br>1.75<br>Oo<br><x<br>Kk<br>i 1.50<br>O<br>><br>Q<br>1.25<br>° 1.00 [iTt<br>0.75<br>0.50<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 9. Datasheet 7 2020-09-25 IDFW80C65D1 **==> picture [86 x 38] intentionally omitted <==** ## Emitter�Controlled�Diode�Rapid�1�Advanced�Isolation ## **PG-TO247-3-AI (PGHSIP2473)** **==> picture [408 x 570] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A - 5.18 DOCUMENT NO.<br>A1 4.70 4.90 Z8B00186434<br>A2 2.23 2.59 REVISION<br>A3 0.20 0.28 02<br>b 1.10 1.30<br>c 0.50 0.70 SCALE 3:1<br>D 22.20 22.40 0 1 2 3 4 5 6 7 8mm<br>D1 16.96 17.16<br>E 15.70 15.90<br>E1 13.68 13.88 EUROPEAN PROJECTION<br>e 5.44<br>L 18.31 18.91<br>L1 2.76 2.96<br>øP 3.50 3.70<br>øP1 5.70 5.90 ISSUE DATE<br>Q 5.96 6.36 05.06.2018<br>**----- End of picture text -----**<br> Note: For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC6006826 and IEC60068227). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of <20µm per 100mm and roughness of <10µm. 8 V�2.2 2020-09-25 Datasheet IDFW80C65D1 **==> picture [86 x 38] intentionally omitted <==** ## Emitter�Controlled�Diode�Rapid�1�Advanced�Isolation ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 9 V�2.2 2020-09-25 Datasheet IDFW80C65D1 **==> picture [86 x 38] intentionally omitted <==** ## Emitter�Controlled�Diode�Rapid�1�Advanced�Isolation ## **Revision�History** IDFW80C65D1 ## **Revision:�2020-09-25,�Rev.�2.2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2020-07-09|Final data sheet| |2.2|2020-09-25|New markingdescription| 10 V�2.2 2020-09-25 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at April 22, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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