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IDB30E60ATMA1
Standard Recovery Diode, 600 V, 52.3 A, Single, 2 V, 126 ns, 117 A
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- Manufacturer: INFINEON
- Product type: Standard Recovery Rectifier Diodes
- No. of Pins: 3Pins
- Diode Case Style: TO-263 (D2PAK)
- Diode Configuration: Single
- Forward Voltage Max: 2V
- Forward Surge Current: 117A
- Reverse Recovery Time: 126ns
- Average Forward Current: 52.3A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.618 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**IDB30E60 Fast Switching EmConFast Switching Emitter Controlled DiodeDiode Product Summary** _V_ RRM 600 V ~~l~~ RoHS ~~ ¢ > _I_ F 30 A **Feature** _V_ F 1.5 V • ~~a~~ 600 V EmCon600V Emitter Controlled technologytechnology _T_ jmax 175 °C • Fast recovery • Soft switching 2 • Low reverse recovery charge 1 • Low forward voltage 2 3 3 • 175°C operating temperature PG-TO263-3
- 175°C operating temperature
- Easy paralleling
- RoHS compliant * ROHS compliant
|**Type**|**Package**|**Ordering Code**|**Marking**|**Pin 1**|**PIN 2**|**PIN 3**|
|---|---|---|---|---|---|---|
|IDB30E60|PG-TO263-3 -|-|D30E60|NC|C|A|
**Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified
|**Maximum Ratingsgss**, atat _T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specifiedpecifiedecified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specifiedpecifiedecified|||
|---|---|---|---|---|---|
|j = 25 °C, unless otherwise specified<br>**Parameter**<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Symbol**<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Symbol**|**Value**<br>**Value**|**Unit**<br>**Unit**|
|Repetitive peak reverse voltage<br>Repetitivepeak reverse voltage<br>~~|~~|_V_RRM<br>~~|~~|RRM<br>_V_R RM<br>~~|~~<br>~~a~~|~~|~~<br>~~a~~|600<br>600<br>~~|~~<br>~~a~~|V<br>V<br>~~a~~|
|Continous forward current<br>_T_C=25°C<br>_T_~~C~~=90°C<br>Continuous forward current<br>_T_C= 25C<br>_T_C= 90C|_I_F|_I_F<br>~~a~~|~~a~~|52.3<br>34.9<br>52.3<br>34.9<br>~~a~~|A<br>A<br>~~a~~|
|~~C~~|||||A|
|Surge non repetitive forward current<br>~~_T_=25°C,~~~~_t_=10 ms, sine halfwave~~<br>Surge non repetitive forward current<br>_T_C= 25C,_t_p= 10 ms, sine halfwave|_I_FSM|FSM<br>_I_FS M||117<br>117||
|~~_T_~~C~~=25°C,~~~~_t_~~p~~=10 ms, sine halfwave~~<br>Maximum repetitive forward current|||||A|
|Maximum repetitive forward current<br>Maximum repetitive forward current<br>_T_C= 25C,_t_plimited by_t_j,max_, D_= 0.5|_I_FRM|FRM<br>_I_FR M||81<br>81||
|_T_C=25°C,_t_plimited by_T_jmax,_D_=0.5<br>Power dissipation||||||
|Power dissipation<br>_T_C=25°C<br>Power dissipation<br>_T_C= 25C<br>_T_C= 90C|_P_tot|tot<br>_P_t ot||142.9<br>142.9<br>80.9|W<br>W|
|_T_C=90°C<br>Operating junction temperature||_T_j<br>~~a~~|~~a~~|80.9<br>-40…+175<br>~~a~~||
|Operating and storage temperature<br>Storage temperature<br>~~|~~|_T_~~j ~~,<br>~~|~~|,_T_~~stg~~<br>_T_st g<br>~~|~~|~~|~~|-55...+175<br>-55...+150<br>~~|~~|°C<br>°C|
|Operating and storage temperature|~~j ~~,|,~~stg~~<br>~~a~~|~~a~~|~~a~~||
|Soldering temperature<br>reflow soldering, MSL1<br>Soldering temperature<br>1.6mm (0.063 in.) from case for 10 s|~~j~~<br>_T_S|~~stg~~<br>_T_S<br>~~a~~|~~a~~|260<br>260<br>~~a~~|°C|
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2013-12-052009-03-04
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|**IDB30E60**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E60**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E60**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E60**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E60**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E60**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|
|---|---|---|---|---|---|
|**Characteristics**||||||
|Thermal resistance, junction - case|_R_thJC|-|-|1.05|K/W|
|Thermal resistance, junction - ambient, leaded|_R_thJA|-|-|62||
|SMD version, device on PCB:|_R_thJA|||||
|@ min. footprint||-|-|62||
|@ 6 cm2cooling area1)||-|35|-||
**Electrical Characteristics** , at _T_ j = 25 °C, unless otherwise specified **Parameter Symbol Values Unit** ~~|~~ **min. typ. max.**
|Reverse leakage current<br>_V_R=600V,_T_j=25°C<br>_V_R=600V,_T_j=150°C|_I_R|-<br>-|-<br>-|50<br>2500|µA|
|---|---|---|---|---|---|
|Forward voltage drop<br>_I_F=30A,_T_j=25°C<br>_I_F=30A,_T_j=150°C|_V_F|-<br>-|1.5<br>1.5|2<br>-|V|
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
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**IDB30E60**
|**Dynamic Characteristics**||||||
|---|---|---|---|---|---|
|Reverse recovery time<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=25°C<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=125°C<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=150°C|_t_rr|-<br>-<br>-|126<br>171<br>178|-<br>-<br>-|ns|
|Peak reverse current<br>_V_R=400V,_I_F= 30A, d_i_F/d_t_=1000A/µs,_T_j=25°C<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=125°C<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=150°C|_I_rrm|-<br>-<br>-|19<br>22<br>24|-<br>-<br>-|A|
|Reverse recovery charge<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=25°C<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=125°C<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=150°C|_Q_rr|-<br>-<br>-|1100<br>1950<br>2150|-<br>-<br>-|nC|
|Reverse recovery softness factor<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=25°C<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=125°C<br>_V_R=400V,_I_F=30A, d_i_F/d_t_=1000A/µs,_T_j=150°C|_S_|-<br>-<br>-|4<br>4.6<br>4.8|-<br>-<br>-||
Rev.2.4
2009-03-042013-12-05
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**IDB30E60**
## **1 Power dissipation**
## **2 Diode forward current**
_P_ tot = _f_ ( _T_ C)
_I_ F = f( _T_ C) parameter: _T_ j ≤ 175°C
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parameter: Tj ≤ 175 °C parameter: T j ≤ 175°C<br>150 55<br> W<br>a ee ee ee A .<br>NE 45 NE<br>120<br>110 ee 40 Ne eee<br>100<br>Nee eee 35 | AL<br>90<br>80 NSIS 30 TTT NSITtt<br>70 25<br>SEAS, SEEN<br>60<br>20<br>50<br>Peers 40 i a of 15 EEE<br>30<br>10<br>20<br>ee 5 ee<br>10<br>0 FF LN 0 | | | [| [A<br>25 50 75 100 125 °C 175 25 50 75 100 125 °C 175<br>T C T C<br>3 Typ. diode forward current 4 Typ. diode forward voltage<br>I F = f ( V F) V F = f ( T j)<br>90 2<br> A V 60A<br>Hp 1.8 TCO Ee<br>70 -55°C<br>25°C<br>100°C 1.7<br>60 150°C<br>CEE<br>1.6<br>ae) [a] eet<br>50<br>1.5 30A<br>40<br>1.4<br>| Sey,Tot Geeee<br>30<br>1.3<br>15A<br>20 oh HEH<br>1.2<br>10 1.1<br>YT cee<br>0 Ba 1 LEELEL ELLE<br>0 0.5 1 1.5 V 2.5 -60 -20 20 60 100 °C 160<br>V F T j<br>tot<br>P I F<br>F<br>I F V<br>**----- End of picture text -----**<br>
Rev.2.4
2013-12-052009-03-04
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**IDB30E60**
## **5 Typ. reverse recovery time**
_t_ rr = _f_ (d _i_ F/d _t_ )
parameter: _V_ R = 400V, _T_ j = 125°C
## **6 Typ. reverse recovery charge**
_Q_ rr= _f_ (d _i_ F/d _t_ )
parameter: _V_ R = 400V, _T_ j = 125 °C
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500 2600<br> ns nC<br>fT tLe {ft | pe<br>60A<br>400 2200<br>60A<br>350 NL EE LE 30A 2000 aay ane<br>15A<br>QQ TMi tt<br>300 1800 30A<br>KX fo<br>250 1600<br>PRS Ze<br>200 1400<br>15A<br>BESS Alt ttt<br>150 1200<br>|| AAS Peer<br>100 tT tL E LETS 1000 TLIELLLL<br>200 300 400 500 600 700 800 A/µs 1000 200 300 400 500 600 700 800 A/µs 1000<br> d i F/d t d i F/d t<br>rr<br>t rr Q<br>**----- End of picture text -----**<br>
## **7 Typ. reverse recovery current**
_I_ rr = _f_ (d _i_ F/d _t_ )
parameter: _V_ R = 400V, _T_ j = 125°C
## **8 Typ. reverse recovery softness factor**
S = f(d _i_ F/d _t_ )
parameter: _V_ R = 400V, _T_ j = 125°C
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**----- Start of picture text -----**<br>
26 12<br> A<br>Trt SC<br>22 OTT XC<br>10<br>60A<br>20<br>KE 30A 9 RO 60A<br>15A 30A<br>18 15A<br>BAIN<br>8<br>16<br>Sh NS<br>7<br>14<br>1 aay/2een SEONG<br>6<br>12 OO SOO<br>5<br>10<br>8 Wyfo 4 SSa<br>6 PTCEEee = EE 3 E<br>200 300 400 500 600 700 800 A/µs 1000 200 300 400 500 600 700 800 A/µs 1000<br> d i F/d t d i F/d t<br>I rr S<br>**----- End of picture text -----**<br>
Rev.2.4
2009-03-042013-12-05
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**IDB30E60**
## **9 Max. transient thermal impedance**
_Z_ thJC = _f_ ( _t_ p)
## parameter : _D_ = _t_ p/ _T_
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**----- Start of picture text -----**<br>
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Rev.2.4
2009-03-042013-12-05
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**IDB30E60**
Rev.2.4
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**IDB30E60**
## **Published by**
**Infineon Technologies AG** _**,**_
**81726 München**
**© 2009 Infineon Technologies AG**
## **Published by All Rights Reserved.**
**Infineon Technologies AG Attention please! 81726 Munich, Germany** The information herein is given to describe certain components and shall not be considered as warranted **© 2013 Infineon Technologies AG** characteristics. **All Rights Reserved.**
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
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The information given in this document shall in no event be regarded as a guarantee of conditions or Infineon Technologies is an approved CECC manufacturer. characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information **Information** regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties For further information on technology, delivery terms and conditions and prices please contact your nearest and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
## **Information Warnings**
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## Infineon Technologies Components may only be used in life-support devices or systems with the express **Warnings** written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
Due to technical requirements, components may contain dangerous substances. For information on the types or system Life support devices or systems are intended to be implanted in the human body, or to support in question, please contact the nearest Infineon Technologies Office. and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health The Infineon Technologies component described in this Data Sheet may be used in life-support devices or of the user or other persons may be endangered. systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev.2.4
2009-03-042013-12-05
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Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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