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IDB30E120ATMA1
Standard Recovery Diode, 1.2 kV, 50 A, Single, 2.15 V, 243 ns, 102 A
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- Manufacturer: INFINEON
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):50A; Diode Configuration:Single; Forward Voltage VF Max:2.15V; Reverse Recovery Time trr Max:243ns; Forward Surge Current Ifsm
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: IDB30
- Qualification: -
- Diode Case Style: TO-263 (D2PAK)
- Diode Configuration: Single
- Forward Voltage Max: 2.15V
- Forward Surge Current: 102A
- Reverse Recovery Time: 243ns
- Average Forward Current: 50A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.575 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**IDB30E120** ## **Fast Switching Emitter Controlled Diode Product Summary** ## **Feature** - 1200 V Emitter Controlled technology - Fast recovery - Soft switching - Low reverse recovery charge - Low forward voltage - Easy paralleling - ***** Qualified according to JEDEC” for target applications - RoHS compliant ROHS compliant |_V_RRM|||1200||V| |---|---|---|---|---|---| |_I_F|||30||A| |_V_F|||1.65||V| |_T_jmax|||150||°C| ||PG-TO263-3-2||||| ||1<br>1||2<br>a<br>3<br>3<br>2||| |**Type**|**Package**|**Ordering Code**|**Marking**|**Pin 1**|**PIN 2**|**PIN 3**| |---|---|---|---|---|---|---| |IDB30E120|PG-TO263-3-2 -|PG-TO263-3-2 -|D30E120|NC|C|A| ## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified |j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**| |---|---|---|---| |Repetitive peak reverse voltage|_V_RRM|1200|V| |Continous forward current<br>_T_C=25°C<br>_T_C=90°C|_I_F|50<br>30|A| |Surge non repetitive forward current<br>_T_C=25°C,_t_p=10 ms, sine halfwave|_I_FSM|102|| |Maximum repetitive forward current<br>_T_C=25°C,_t_plimited by_T_jmax,_D_=0.5|_I_FRM|76.5|| |Power dissipation<br>_T_C=25°C<br>_T_C=90°C|_P_tot|138<br>66|W| |Operating and storage temperature|_T_j ,_T_stg|-55...+150|°C| |Soldering temperature<br>reflow soldering, MSL1|jstg<br>_T_S|260|°C| Rev.2.3 2013-07-02 Page 1 |**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~| |---|---|---|---|---|---| |**Characteristics**|||||| |Thermal resistance, junction - case|_R_thJC|-|-|0.9|K/W| |Thermal resistance, junction - ambient, leaded|_R_thJA|-|-|62|| |SMD version, device on PCB:|_R_thJA||||| |@ min. footprint||-|-|62|| |@ 6 cm2cooling area1)||-|35|-|| **Electrical Characteristics** , at _T_ j = 25 °C, unless otherwise specified **Parameter Symbol Values Unit** ~~|~~ **min. typ. max.** |Reverse leakage current<br>_V_R=1200V,_T_j=25°C<br>_V_R=1200V,_T_j=150°C|_I_R|-<br>-|-<br>-|100<br>2500|µA| |---|---|---|---|---|---| |Forward voltage drop<br>_I_F=30A,_T_j=25°C<br>_I_F=30A,_T_j=150°C|_V_F|-<br>-|1.65<br>1.7|2.15<br>-|V| 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.3 2013-07-02 Page 2 **IDB30E120** |**Dynamic Characteristics**|||||| |---|---|---|---|---|---| |Reverse recovery time<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_t_rr|-<br>-<br>-|243<br>355<br>380|-<br>-<br>-|ns| |Peak reverse current<br>_V_R=800V,_I_F= 30 A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_I_rrm|-<br>-<br>-|23.7<br>28.3<br>29.5|-<br>-<br>-|A| |Reverse recovery charge<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_Q_rr|-<br>-<br>-|2630<br>4700<br>5200|-<br>-<br>-|nC| |Reverse recovery softness factor<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_S_|-<br>-<br>-|6<br>7.4<br>7.5|-<br>-<br>-|| Rev.2.3 2013-07-02 Page 3 **IDB30E120** ## **1 Power dissipation** _P_ tot = _f_ ( _T_ C) parameter: Tj ≤ 150°C ## **2 Diode forward current** _I_ F = f( _T_ C) parameter: _T_ j ≤ 150°C **==> picture [484 x 600] intentionally omitted <==** **----- Start of picture text -----**<br> 140 55<br> W<br> A<br>120<br>45<br>110<br>BS SE<br>40<br>100<br>NESE] SS<br>90 35<br>80<br>30<br>a<br>70<br>25<br>60<br>es OO 50 PN 20 ee<br>40 FINE 15 tf<br>30 a [| [TN<br>10<br>20<br>> — 5 Ae<br>100 rN 0 || [| | N<br>25 50 75 100 °C 150 25 50 75 100 °C 150<br>T C T C<br>3 Typ. diode forward current 4 Typ. diode forward voltage<br>I F = f ( V F) V F = f ( T j)<br>90 2.4<br> A ET 60A ——<br> V<br>-55°C<br>70<br>25°C<br>100°C<br>60 150°C 2<br>7 ST<br>50<br>tot 1.8 TELL<br>30A<br>40<br>t fe aaa<br>30 1.6<br> Et SC<br>20 15A<br>1.4<br>PP<br>10<br>ASL Eo<br>0 1.2<br>0 0.5 1 1.5 2 V 3 -60 -20 20 60 100 °C 160<br>V F T j<br>tot<br>P I F<br>F<br>I F V<br>**----- End of picture text -----**<br> Rev.2.3 2013-07-02 Page 4 **IDB30E120** ## **5 Typ. reverse recovery time** _t_ rr = _f_ (d _i_ F/d _t_ ) parameter: _V_ R = 800V, _T_ j = 125°C **==> picture [231 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 1100<br> ns KLLLELLIL<br>900 ACLEELLIL<br>60A<br>800<br>30A<br>\\Ao<br>15A<br>700<br>CANE<br>600<br>t XS<br>500<br>CNCNSSTT<br>400<br>300 LEE> at—<br>200<br>200 300 400 500 600 700 800 A/µs 1000<br> d i F/d t<br>t rr<br>**----- End of picture text -----**<br> ## **6 Typ. reverse recovery charge** _Q_ rr= _f_ (d _i_ F/d _t_ ) parameter: _V_ R = 800V, _T_ j = 125 °C **==> picture [232 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> 6500<br> nC<br>60A<br>eae<br>5500<br>5000 ATLL<br>30A<br>AE<br>4500<br>4000<br>pe<br>ot EE<br>3500 15A<br>3000 | LT<br>2500 FT]LL LE<br>200 300 400 500 600 700 800 A/µs 1000<br> d i F/d t<br>rr<br>Q<br>**----- End of picture text -----**<br> ## **7 Typ. reverse recovery current** _I_ rr = _f_ (d _i_ F/d _t_ ) parameter: _V_ R = 800V, _T_ j = 125°C ## **8 Typ. reverse recovery softness factor** S = f(d _i_ F/d _t_ ) parameter: _V_ R = 800V, _T_ j = 125°C **==> picture [486 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> 35 18<br> A Tiiiiby NELLIE<br>60A<br>30A<br>14<br>15A roy NN<br>25<br>60A<br>WL 12 NN 30A<br>15A<br>20<br>10<br>! Meo ONS<br>15<br>0) Aaeue PNA 8<br>10<br>6<br>ALi) FPS<br>TEEEEEL)) ©=6EEEEEETP<br>5 4<br>200 300 400 500 600 700 800 A/µs 1000 200 300 400 500 600 700 800 A/µs 1000<br> d i F/d t d i F/d t<br>I rr S<br>**----- End of picture text -----**<br> Rev.2.3 2013-07-02 Page 5 **IDB30E120** ## **9 Max. transient thermal impedance** _Z_ thJC = _f_ ( _t_ p) parameter : _D_ = _t_ p/ _T_ **==> picture [232 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1 IDP30E120<br>K/W a A<br>rT TT oT eT<br>LIT TTT TTT TT TTT<br>10 0<br>i<br>— 5<br>EO<br>SE SAH SA<br>10 -1 Nee EEL<br>ESE er atS<br>TT A a ee SS eee ee<br>me 2 DS<br>TST AA TSS<br>D = 0.50<br>10 -2 7BD “TTise AN ceSS 0.20<br>a | | a, 0.10 in<br>PT A So ae Th<br>-3 ATSrnecelieneSTieee Eeemail 0.050.02 HuUH<br>10 SLUIIMATM<br>iUIT ATIISS Tolanni<br>a|A A, 0.01 ainiin<br>LATTACT single pulse PICAUM TTT EHHTT INT<br>10 -4<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] s 10 [0]<br>t<br>—_> p<br>thJC<br>Z<br>**----- End of picture text -----**<br> Rev.2.3 2013-07-02 Page 6 **IDB30E120** Rev.2.3 2013-07-02 Page 7 **IDB30E120** ## **Published by** **Infineon Technologies AG** _**,**_ ## **81726 München Published by © 2009 Infineon Technologies AG Infineon Technologies AG All Rights Reserved. 81726 Munich, Germany © 2013 Infineon Technologies AG Attention please! All Rights Reserved.** The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. ## **Legal Disclaimer** We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, The regarding circuits, descriptions and charts stated herein. information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information Infineon Technologies is an approved CECC manufacturer. regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. **Information** For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest **Warnings** Infineon Technologies Office ( Due to technical requirements components may contain dangerous substances. **www.infineon.com** ) **.** For information on the types in question please contact your nearest Infineon Technologies Office. ## **Warnings** Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to Due to technical requirements, components may contain dangerous substances. For information on the types cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device in question, please contact the nearest Infineon Technologies Office. or system Life support devices or systems are intended to be implanted in the human body, or to support The Infineon Technologies component described in this Data Sheet may be used in life-support devices or and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health systems and/or automotive, aviation and aerospace applications or systems only with the express written of the user or other persons may be endangered. approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.3 2013-07-02 Page 8
Updated at April 22, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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