IAUTN08S5N012LATMA1

Dual MOSFET, Dual N Channel, 80 V, 300 A, 1150 µohm

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Manufacturer: INFINEON
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Operating Temperature Max: 175°C
Power Dissipation N Channel: 375W
Drain Source Voltage Vds N Channel: 80V
Continuous Drain Current Id N Channel: 300A
Drain Source On State Resistance N Channel: 1150µohm

Delivery and price
Units per pack	1000
Price	2.17 €
Current stock	1000+
Lead time	30 days

Datasheet

**IAUTN08S5N012L** 

## Automotive MOSFET 

## **OptiMOS™ 5 Power-Transistor** 

## **Features** 

- OptiMOS™ power MOSFET for automotive applications 

- N-channel – Enhancement mode – Normal Level 

- Extended qualification beyond AEC-Q101 

- Enhanced electrical testing 

- Robust design 

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PG-HSOF-8-2<br>1<br>1<br>**----- End of picture text -----**<br>


- Linear FET (LINFET) and low RDS(on) FET (ONFET) in one package 

- Dedicated gate pins for both MOSFETs (Dual Gate) 

- Linear FET with enhanced SOA and paralleling characteristics for linear operation 

- 175°C operating temperature 

- RoHS compliant 

- 100% Avalanche tested 

- MSL1 up to 260°C peak reflow 

## **Potential applications** 

- Power distribution and battery management (electronic fuses and disconnect switches) 

- In-rush current limitation (capacitor charging, motor surge current) 

- Slow switching to minimize voltage transients and EMI (electrical catalyst heater) 

- Drain-source voltage clamping (dissipation of inductive energy, over-voltage protection) 

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Drain Tab<br>Gate ON Gate LIN<br>pin 1 pin 2<br>Source<br>pin 3-8<br>**----- End of picture text -----**<br>


## **Product validation** 

Qualified for automotive applications. Product validation according to AEC-Q101. 

## **Product summary** 

|**Product summary**|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|_V_DS||80|||V||||||||
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|_R_DS(on),max||1.15|||mΩ||||||||
||||||||||||||
|_I_D (chip limited)||410|||A||||||||
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||||||||||||||
|**Type**|||||||||**Package**|||**Marking**|
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|IAUTN08S5N012L|||||||||PG-HSOF-8-2|||5N0812L|



Data Sheet **www.infineon.com/mosfets** 

Please read the Important Notice and Warnings at the end of this document 

Rev 1.0 2024-02-28 

**OptiMOS™ 5 Automotive Power MOSFET, 80 V** IAUTN08S5N012L 

## **Table of Contents** 

|Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|1|
|---|---|
|Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<br>3||
|Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<br>3||
|Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<br>4|
|Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<br>6||
|Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14||



Rev. 1.0 2024-02-28 

Data Sheet 

2 

**OptiMOS™ 5 Automotive Power MOSFET, 80 V** IAUTN08S5N012L 

## **Maximum ratings** 

## at _T_ j = 25 °C, unless otherwise specified 

|**Maximum ratings**<br>at_T_j = 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specifiedpecifiedecified|||||
|---|---|---|---|---|
|j<br>**Parameter**|**Symbol**<br>~~Pf~~|**Conditions**<br>~~Pf~~|**Value**<br>~~Pf~~|**Unit**|
|Drain current|_I_D|_V_GS,LIN=_V_GS,ON= 10 V,<br>_T_c= 25 °C,chiplimitation1,2)<br>~~Pe~~|410<br>~~Pe~~|A|
|||_V_GS,LIN=_V_GS,ON= 10 V,<br>_T_c= 25 °C,DC current3)<br>~~PT~~|300<br>~~PT~~||
|||_V_GS,LIN=_V_GS,ON= 10 V,<br>_T_c= 85 °C, _R_thjaon 2s2p2,4)<br>~~PL~~|52<br>~~PL~~||
|Pulsed drain current|_I_D,pulse<br>~~Pf~~<br>~~ne~~|_V_GS,LIN=_V_GS,ON= 10 V,<br>_T_ c= 25 °C, _t_ p= 100µs2)<br>~~Pf~~|1505<br>~~Pf~~||
|Avalanche energy, single pulse2)|_E_AS<br>~~ne~~|_I_D= 150 A|820|mJ|
|Avalanche current, single pulse|_I_AS<br>~~ne~~<br>~~a~~<br>~~es~~|–|300|A|
|Gate source voltage, LINFET|_V_GS,LIN<br>~~es~~<br>~~ee~~|–<br>|± 20<br>|V|
|Gate source voltage, ONFET|_V_GS,ON<br>~~es~~<br>~~ee~~|–<br>|± 20<br>|V|
|Power dissipation|_P_tot<br>~~eePf~~<br>~~es~~|_T_C= 25 °C,<br>_V_GS,LIN=_V_GS,ON= 10 V<br>~~Pf~~|375<br>~~Pf~~|W|
|Operating and storage temperature|_T_j,_T_stg<br>~~es~~|–|-55 ... +175|°C|



## **Thermal characteristics[2)]** 

|**Thermal characteristics[2)]**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|Thermal resistance,junction - case|_R_thJC|–|–|–|0.40|K/W|
|Thermal resistance,<br>junction -ambient3)|_R_thJA|–|–|14.8|–||



Rev. 1.0 2024-02-28 

Data Sheet 

3 

**OptiMOS™ 5 Automotive Power MOSFET, 80 V** IAUTN08S5N012L 

## **Electrical characteristics** 

|**Parameter**<br>**Static characteristics**<br>~~ee~~|**Symbol**|**Conditions**<br>~~ee~~|**min.**<br>~~ee~~|**typ.**<br>**Values**<br>~~ee~~|**max.**<br>~~ee~~|**Unit**|
|---|---|---|---|---|---|---|
|Drain-source breakdown voltage|_V_(Br)DSS<br>~~pf~~|_V_GS,ON=_V_GS,LIN= 0 V,<br>_I_D= 1 mA<br>~~pf~~|80<br>~~pf~~|–<br>~~pf~~|–<br>~~pf~~|V|
|Current limit precision|_I_D(lim)|_V_DS= 6 V,_V_GS,ON= 0 V,<br>_V_GS,LIN = 5.6 V<br>~~pT~~|15<br>~~pT~~|39<br>~~pT~~|57<br>~~pT~~|A|
|||_V_DS= 6 V,_V_GS,ON= 0 V,<br>_V_GS,LIN = 6.2 V<br>~~pt~~|35<br>~~pt~~|65<br>~~pt~~|87<br>~~pt~~|A|
|||_V_DS= 48 V,_V_GS,ON= 0 V,<br>_V_GS,LIN = 5.6 V<br>~~pT~~|25<br>~~pT~~|48<br>~~pT~~|66<br>~~pT~~|A|
|Gate threshold voltage|_V_GS(th)<br>~~Cee~~|_V_DS=_V_GS,LIN,_V_GS,ON= 0 V,<br>_I_D = 22 µA<br>~~Cee~~|2.5<br>~~Cee~~|2.9<br>~~Cee~~|3.3<br>~~Cee~~|V|
|||_V_DS=_V_GS,ON=_V_GS,LIN,<br>_I_D = 275 µA<br>~~Cee~~<br>~~ae~~|2.5<br>~~Cee~~<br>~~ae~~|2.9<br>~~Cee~~<br>~~ae~~|3.3<br>~~Cee~~<br>~~ae~~||
|Zero gate voltage drain current|_I_DSS<br>~~cee~~|_V_DS= 80 V, Tj = 25 °C,<br>_V_GS,ON_= V_GS,LIN= 0 V<br>~~cee~~|–<br>~~cee~~|–<br>~~cee~~|1<br>~~cee~~|µA|
|||_V_DS= 50 V, Tj = 85 °C,<br>_V_GS,ON _= V_GS,LIN= 0 V2)<br>~~cee~~<br>~~tT~~|–<br>~~cee~~<br>~~tT~~<br>~~oe~~|–<br>~~cee~~<br>~~tT~~|20<br>~~cee~~<br>~~tT~~||
|Gate-source leakage current LINFET|_I_GSS,LIN<br>~~ee~~|_V_GS,LIN= 20 V<br>~~ee~~|–<br>~~ee~~<br>~~oe~~|–<br>~~ee~~|100<br>~~ee~~|nA|
|Gate-source leakage current ONFET|_I_GSS,ON<br>~~ee~~|_V_GS,ON= 20 V<br>~~ee~~|–<br>~~ee~~<br>~~oe~~|–<br>~~ee~~|100<br>~~ee~~||
|Drain-source on-state resistance|_R_DS(on)|_V_GS,ON= VGS,LIN= 6 V,<br>_I_D= 75 A<br>~~et~~|–<br>~~oe~~<br>~~et~~|1.30<br>~~et~~|1.80<br>~~et~~|mΩ|
|||_V_GS,ON= VGS,LIN= 10 V,<br>_I_D= 100 A<br>~~pt~~|–<br>~~pt~~|1.00<br>~~pt~~|1.15<br>~~pt~~||
|||_V_GS,ON= 0 V,_V_GS,LIN= 6 V,<br>_I_D= 3.75 A<br>~~ae~~|–<br>~~ae~~|11.0<br>~~ae~~|16.0<br>~~ae~~||
|||_V_GS,ON= 0 V,_V_GS,LIN= 10 V,<br>_I_D= 5 A<br>~~pL~~|–<br>~~pL~~|6.0<br>~~pL~~|9.0<br>~~pL~~||



Rev. 1.0 2024-02-28 

Data Sheet 

4 

**OptiMOS™ 5 Automotive Power MOSFET, 80 V** 

IAUTN08S5N012L 

|**Parameter**|**Symbol**<br>**Conditions**|**Values**|**Unit**|
|---|---|---|---|
|||**min.**<br>**typ.**<br>**max.**||
|**Dynamic characteristics2)**||||
|Input capacitance ON- and LINFET<br>Output capacitance ON- and LINFET<br>Reverse transfer capacitance ON- and LINFET<br>Input capacitance LINFET<br>Output capacitance LINFET<br>Reverse transfer capacitance LINFET|_C_iss,ON+LIN<br>_C_oss,ON+LIN<br>_C_rss,ON+LIN<br>_C_iss,LIN<br>_C_oss,LIN<br>_C_rss,LIN<br>_V_GS,ON=_V_GS,LIN= 0 V,<br>_V_DS= 40 V,_f_= 1 MHz,<br>refers to pins Gate ON and<br>Gate LIN  short-circuited<br>_V_GS,ON=_V_GS,LIN= 0 V,<br>_V_DS= 40 V,_f_= 1 MHz,<br>refers to pin Gate LIN<br>~~S~~o <br>~~S|~~<br>~~P|~~<br>~~S|~~<br>~~**S**~~o <br>~~|~~|–<br>11800<br>15340 <br>–<br>2100<br>2730<br>–<br>91<br>137<br>–<br>1200<br>1560<br>–<br>2100<br>2730<br>–<br>16<br>24<br> ~~EE~~<br>~~Pf~~<br>~~Pot~~<br>~~Pf~~<br> ~~EE~~<br>~~Pf~~|pF|
|**Gate charge characteristics2)**||||
|Gate to source charge ON- and LINFET<br>Gate to drain charge ON- and LINFET<br>Gate charge total ON- and LINFET<br>Gate to source charge LINFET<br>Gate to drain charge LINFET<br>Gate charge total LINFET|_Q_gs,ON+LIN<br>_Q_gd,ON+LIN<br>_Q_g,ON+LIN<br>_Q_gs,LIN<br>_Q_gd,LIN<br>_Q_g,LIN<br>_V_DD= 40 V,_I_D= 100 A,<br>_V_GS,ON=_V_GS,LIN= 0 to 10 V<br>_V_DD= 40 V,_I_D= 5 A,<br>_V_GS,LIN= 0 to 10 V,<br>_V_GS,ON= 0 V<br>~~S~~o <br>~~S|~~<br>~~P|~~<br>~~S|~~<br>~~**S**~~o <br>~~|~~|–<br>51<br>66<br>–<br>44<br>66<br>–<br>178<br>231<br>–<br>5.2<br>6.8<br>–<br>4.7<br>7.1<br>–<br>19<br>24<br> ~~EE~~<br>~~Pf~~<br>~~Pot~~<br>~~Pf~~<br> ~~EE~~<br>~~Pf~~|nC|
|**Reverse diode**||||
|Diode continous forward current2)|_I_S<br>_T_C= 25 °C<br>–<br>–<br>300<br>~~Pf~~||A|
|Diode pulse current2)<br>Diode forward voltage<br>Reverse recovery time2)<br>Reverse recovery charge2)|_I_S,pulse<br>_T_C= 25 °C,_t_p= 100 µs<br>–<br>–<br>1505<br>_V_SD<br>_I_F= 100 A,<br>_T_j= 25 °C<br>–<br>0.8<br>1.1<br>_t_rr<br>–<br>86<br>–<br>_Q_rr<br>–<br>177<br>–<br>_V_R= 40 V,_I_F= 50 A,<br>d_i_F/d_t_= 100 A/µs<br>~~ee~~<br>~~S|~~<br>~~Pf~~<br>~~So~~||V<br>ns<br>nC|
|1)Current is limited by the overall system design and the customer-specific PCB.||||



2) The parameter is not subject to production testing – specified by design. 

3) Current is limited by the bond wires. 

4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. 

Rev. 1.0 2024-02-28 

Data Sheet 

5 

**OptiMOS™ 5 Automotive Power MOSFET, 80 V** IAUTN08S5N012L 

## **Electrical characteristics diagrams** 

## **1 Power dissipation** 

## **2 Drain current** 

_P_ tot = f(= f( _T_ C); ); _V_ GS,ON =  = _V_ GS,LIN ≥ 6 V ≥ 6 V 

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**----- Start of picture text -----**<br>
 tot = f(= f( T  C); );  V  GS,ON =  =  V  GS,LIN ≥ 6 V ≥ 6 V I  D = f( T  C);  V  GS,ON  = V  GS,LIN ≥ 6 V<br>400<br>500<br>350<br>300<br>400 Chip limit<br>250<br>DC current<br>300<br>200<br>150 200<br>100<br>100<br>50<br>0 0<br>0 50 100 150 25 75 125 175<br>T C [°C] T C [°C]<br>3 Safe operating area ONFET and LINFET 4 Safe operating area LINFET<br>= f( V  DS); );  T  C = 25 °C; = 25 °C;  V  GS,LIN =  =  V  GS,ON; ;  D  = 0; parameter: tpp I  D = f( V  DS);  T  C = 25 °C;  V  GS,ON = 0 V; D = 0; parameter: tp<br>10000 1000<br>1 µs<br>10 µs<br>100 µs<br>1 µs<br>1000<br>10 µs 100 1 ms<br>100 µs<br>10 ms<br>1 ms<br>100<br>10<br>10<br>1 1<br>0.1 1 10 100 1 10 100<br>V DS [V] V DS [V]<br> [W]<br> [A]<br>P tot I D<br> [A]  [A]<br>I D I D<br>**----- End of picture text -----**<br>


## **3 Safe operating area ONFET and LINFET** 

_I_ D = f( _V_ DS); ); _T_ C = 25 °C; = 25 °C; _V_ GS,LIN =  = _V_ GS,ON; ; _D_ = 0; parameter: tpp 

Rev. 1.0 2024-02-28 

Data Sheet 

6 

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OptiMOS™ 5 Automotive Power MOSFET, 80 V<br>IAUTN08S5N012L<br>5 Typ. output characteristics ONFET and LINFET 6 Typ. drain-source on-state resistance ONFET and LINFET<br>I  D = f( V  DS);  T  j = 25 °C; parameter:  V  GS,ON  = V  GS,LIN R  DS(on) = f( I  D);  T  j = 25 °C; parameter:  V  GS,ON  = V  GS,LIN<br>1200<br>10 V<br>7 V 3.8<br>1000<br>3.3<br>6 V 4.5 V<br>5 V<br>800<br>2.8<br>600<br>5 V 2.3<br>400 1.8<br>5.5 V<br>5.5 V<br>6 V<br>200 1.3<br>7 V<br>4.5 V<br>10 V<br>0.8<br>0<br>0 100 200 300<br>0 1 2 3 4 5 6 7<br>V DS [V] I D [A]<br>Be<br>7 Typ. transfer characteristics ONFET and LINFET 8 Typ. drain-source on-state resistance ONFET and LINFET<br>I  D = f( V  GS,ON);  V  DS = 6 V;  V  GS,ON =  V  GS,LIN; parameter:  T  j R  DS(on) = f( T  j); parameter:  I  D,  V  GS,ON,  V  GS,LIN<br>25 °C<br>2.1<br>-55 °C<br>V GS,ON =  V GS,LIN = 6 V,<br>1000 175 °C 1.9 I D = 75 A<br>1.7<br>750<br>1.5<br>1.3<br>500 V GS,ON = 10 V,<br>1.1 V GS,LIN = 0 V,  I D = 100 A<br>V GS,ON =  V GS,LIN = 10 V,<br>0.9 I D = 100 A<br>250<br>0.7<br>0 0.5<br>2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 -60 -20 20 60 100 140 180<br>V GS,ON [V] T j [°C]<br>]W<br> [m<br> [A]<br>I D DS(on)<br>R<br>]<br>W<br> [m<br> [A]<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Rev. 1.0 2024-02-28 

Data Sheet 

7 

**OptiMOS™ 5 Automotive Power MOSFET, 80 V** IAUTN08S5N012L 

## **9 Typ. output characteristics LINFET** 

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**----- Start of picture text -----**<br>
I  D = f( V  DS);  T  j = 25 °C;  V  GS,ON = 0 V; parameter:  V  GS,LIN<br>250<br>10 V<br>200<br>150<br>7.5 V<br>100<br>6.2 V<br>50<br>5.6 V<br>5.1 V<br>0<br>0 20 40 60 80<br>V DS [V]<br>11 Typ. transfer characteristics LINFET<br>I  D = f( V  GS,LIN);  V  DS = 6 V;  V  GS,ON = 0 V; parameter:  T  j<br>300<br>-55 °C<br>250<br>25 °C<br>200 175 °C<br>150<br>100<br>50<br>0<br>3 4 5 6 7 8 9 10<br>V GS,LIN [V]<br> [A]<br>I D<br> [A]<br>I D<br>**----- End of picture text -----**<br>


## **10 Typ. drain-source on-state resistance LINFET** 

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**----- Start of picture text -----**<br>
I F   = f( V SD  );  V  GS,LIN = 10 V;  V  GS,ON = 0 V<br>17<br>15<br>13<br>11<br>I D = 100 A<br>9<br>I D = 5 A<br>7<br>5<br>3<br>1<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [Ω]<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **12 Typ. transconductance LINFET** 

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**----- Start of picture text -----**<br>
g  m = f( I  D);  V  DS = 6 V;  V  GS,ON = 0 V; parameter:  T  j<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
80<br>70 -55 °C<br>60 25 °C<br>50<br>175 °C<br>40<br>30<br>20<br>10<br>0<br>0 50 100 150 200<br>I D [A]<br> [S]<br>m<br>g<br>**----- End of picture text -----**<br>


Rev. 1.0 2024-02-28 

Data Sheet 

8 

**OptiMOS™ 5 Automotive Power MOSFET, 80 V** IAUTN08S5N012L 

## **13 Typ. capacitances ONFET and LINFET** 

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**----- Start of picture text -----**<br>
C  = f( V  DS);  V  GS,LIN =  V  GS,ON = 0 V;  f  = 1 MHz<br>10 [5]<br>Ciss,ON+LIN<br>10 [4]<br>Coss,ON+LIN<br>10 [3]<br>10 [2] Crss,ON+LIN<br>10 [1]<br>0 20 40 60 80<br>V DS [V]<br> [pF]<br>C<br>**----- End of picture text -----**<br>


## **15 Typ. gate charge ONFET and LINFET** 

_V_ GS,ON = f( _Q_ g,ON+LIN); _I_ D = 100 A; _V_ GS,LIN = _V_ GS,ON; _V_ DS = 40 V 

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**----- Start of picture text -----**<br>
10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 35 70 105 140 175<br>Q g,ON+LIN [nC]<br> [V]<br>GS,ON<br>V<br>**----- End of picture text -----**<br>


## **14 Typ. capacitances LINFET** 

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**----- Start of picture text -----**<br>
C  = f( V  DS);  V  GS,LIN =  V  GS,ON = 0 V;  f  = 1 MHz<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [5]<br>10 [4] Coss,LIN<br>Ciss,LIN<br>10 [3]<br>Crss,LIN<br>10 [2]<br>10 [1]<br>0 20 40 60 80<br>V DS [V]<br> [pF]<br>C<br>**----- End of picture text -----**<br>


## **16 Typ. gate charge LINFET** 

_V_ GS = f( _Q_ G); _I_ D = 5 A; _V_ GS,ON = 0 V; _V_ DS = 40 V 

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**----- Start of picture text -----**<br>
10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20<br>Q G,LIN [nC]<br> [V]<br>GS,LIN<br>V<br>**----- End of picture text -----**<br>


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Data Sheet 

9 

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OptiMOS™ 5 Automotive Power MOSFET, 80 V<br>IAUTN08S5N012L<br>17 Typical avalanche energy 18 Typ. avalanche characteristics<br>E  AS = f( T  j); parameter:  I  D I  AS = f( t  AV); parameter:  T  j(start)<br>1200 1000<br>75 A<br>800<br>25 °C<br>100 °C<br>100<br>150 °C<br>150 A<br>400<br>300 A<br>0 10<br>25 75 125 175 1 10 100 1000<br>T j [°C] t AV [µs]<br>AB<br>19 Typical forward diode characteristics 20 Drain-source breakdown voltage<br>I F   = f( V SD  ); parameter:  T  j V  (Br)DSS = f( T  j);  I  D = 1 mA<br>10 [4] 87<br>86<br>85<br>10 [3]<br>84<br>83<br>82<br>25 °C<br>10 [2]<br>81<br>175 °C<br>80<br>79<br>10 [1]<br>78<br>77<br>10 [0] 76<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -60 -10 40 90 140<br>V SD [V] T j [°C]<br>Ese<br>Rev. 1.0<br>Data Sheet 10 2024-02-28<br>[mJ]  [A]<br>AS I AV<br>E<br> [V]<br> [A]<br>I F<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


**OptiMOS™ 5 Automotive Power MOSFET, 80 V** IAUTN08S5N012L 

**21 Typ. gate threshold voltage ONFET and LINFET** 

**22 Max. transient thermal impedance** 

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V  GS(th) = f( T  j);  V  GS,LIN =  V  GS,ON =  V  DS; parameter:  I  D Z  thJC = f( t  p); parameter: D = tp/T<br>3.5 10 [0]<br>3 2750 µA 0.5<br>10 [-1]<br>275 µA<br>2.5 0.1<br>0.05<br>0.01<br>2<br>10 [-2]<br>single pulse<br>1.5<br>1 10 [-3]<br>-60 -20 20 60 100 140 180 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>T j [°C] t p [s]<br>fl<br> [V]<br> [K/W]<br>GS(th) thJC<br>V Z<br>**----- End of picture text -----**<br>


Rev. 1.0 2024-02-28 

Data Sheet 

11 

**OptiMOS™ 5 Automotive Power MOSFET, 80 V** IAUTN08S5N012L 

**Package outline** 

## **Footprint** 

## **Packaging** 

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Insert image<br>00d 0 O}/H © O]O<br>**----- End of picture text -----**<br>


Rev. 1.0 2024-02-28 

Data Sheet 

12 

**OptiMOS™ 5 Automotive Power MOSFET, 80 V** IAUTN08S5N012L 

## **Revision History** 

|**Revision**<br>Rev 1.0<br>~~—~~|**Date**<br>2024-02-28|**Changes**<br>Final Data Sheet|
|---|---|---|



Rev. 1.0 2024-02-28 

Data Sheet 

13 

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## **Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **Edition 2024-02-28** 

## **IMPORTANT NOTICE** 

**Published by** The information given in this document shall in no event be regarded For further information on technology, delivery as a guarantee of conditions or characteristics terms and conditions and prices, please contact the **Infineon Technologies AG** ("Beschaffenheitsgarantie"). nearest Infineon Technologies Office **81726 Munich, Germany** With respect to any examples, hints or any typical values stated ( **www.infineon.com** ). herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all **© 2024 Infineon Technologies AG** warranties and liabilities of any kind, including without limitation **WARNINGS** warranties of non-infringement of intellectual property rights of any Due to technical requirements products may **All Rights Reserved.** third party. contain dangerous substances. For information on 

warranties of non-infringement of intellectual property rights of any Due to technical requirements products may **All Rights Reserved.** third party. contain dangerous substances. For information on In addition, any information given in this document is subject to the types in question please contact the nearest **Do you have any questions about any** customer's compliance with its obligations stated in this document Infineon Technologies Office. **aspect of this document?** and any applicable legal requirements, norms and standards Except as otherwise explicitly approved by Infineon **Email: erratum@infineon.com** concerningInfineon customer'sTechnologiesproductsin and customer'sany use of theapplications.product of Technologiesauthorized inrepresentativesa written documentof signedInfineonby **Document reference** The data contained in this document is exclusively intended for Technologies, Infineon Technologies’ products may **Z8F80541192** technically trained staff. It is the responsibility of customer’s technical not be used in any applications where a failure of departments to evaluate the suitability of the product for the the product or any consequences of the use thereof intended application and the completeness of the product can reasonably be expected to result in personal information given in this document with respect to such application. injury.

Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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