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IAUCN10S5L280DATMA1
Dual MOSFET, N Channel, 100 V, 20 A, 0.028 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS Series
- Qualification: AEC-Q101
- Transistor Case Style: TDSON
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 38W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 100V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 20A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.028ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.506 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**IAUCN10S5L280D**
## Automotive MOSFET
## **OptiMOS[TM] 5 Power-Transistor**
## **Features**
- OptiMOSTM power MOSFET for automotive applications
**==> picture [67 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
PG-TDSON-8-61<br>**----- End of picture text -----**<br>
- N-channel – Enhancement mode – Logic Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS compliant
- 100% Avalanche tested
## **Potential Applications**
General automotive applications.
## **Product Validation**
Qualified for automotive applications. Product validation according to AEC-Q101.
## **Product Summary**
|**Product Summary**|||
|---|---|---|
|_V_DS|100|V|
|_R_DS(on)|28.00|mΩ|
|_I_D(chip limited)|23|A|
|**Type**|**Package**|**Marking**|
|---|---|---|
|IAUCN10S5L280D|PG-TDSON-8-61|5N1L280D|
Please read the Important Notice and Warnings at the end of this document
Data Sheet **www.infineon.com/mosfets**
Rev. 1.0 2024-05-03
**OptiMOS[ TM] 5 Automotive Power MOSFET, 100 V**
IAUCN10S5L280D
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## **Table of Contents**
|Description<br>. . . . . . . . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|1|
|---|---|---|---|---|
|Maximum ratings<br>. . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|3|
|Thermal characteristics<br>.|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|4|
|Electrical characteristics|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|4|
|Electrical characteristics|diagrams||. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|6|
|Package outline & footprint||. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|10|
|Revision history<br>. . . . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|11|
|Disclaimer<br>. . . . . . . . . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|12|
Data Sheet
Rev. 1.0 2024-05-03
2
**OptiMOS[ TM] 5 Automotive Power MOSFET, 100 V**
IAUCN10S5L280D
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## **Maximum Ratings**
## at _T_ j = 25°C, unless otherwise specified
|**Parameter**|**Symbol**|**Conditions**|**Value**|**Unit**|
|---|---|---|---|---|
|Continuous drain current|_I_D|_V_GS= 10 V, Chip limitation1,2)|23|A|
|||_V_GS= 10 V, DC current|20||
|||_T_a= 85°C,_V_GS= 10 V,_R_thJA<br>on 2s2p2,3)|5||
|Pulsed drain current2)|_I_D,pulse|_T_C= 25°C,_t_p= 100 μs|56||
|Avalanche energy, single pulse2)|_E_AS|_I_D= 9 A|13|mJ|
|Avalanche current, single pulse|_I_AS|–|9|A|
|Gate source voltage|_V_GS|–|±20|V|
|Power dissipation|_P_tot|_T_C= 25°C|38|W|
|Operating and storage temperature|_T_ j,_T_stg|–|-55 ... +175|°C|
Data Sheet
Rev. 1.0 2024-05-03
3
**OptiMOS[ TM] 5 Automotive Power MOSFET, 100 V** IAUCN10S5L280D
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## **Thermal Characteristics[2)]**
|**Thermal Characteristics2)**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|Thermal resistance, junction - case|_R_thJC|–|–|–|4|K/W|
|Thermal resistance, junction - ambient3)|_R_thJA|–|–|43|–||
## **Electrical Characteristics**
at _T_ j=25 °C, unless otherwise specified
|**Parameter**|**Symbol**|**Conditions**|**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**Static Characteristics**|||||||
|Drain-source breakdown voltage|_V_(Br)DSS|_V_GS= 0 V,<br>_I_D= 1 mA|100|–|–|V|
|Gate threshold voltage|_V_GS(th)|_V_DS=_V_GS,_I_D= 10 μA|1.2|1.7|2.2||
|Zero gate voltage drain current|_I_DSS|_V_DS= 100 V,_V_GS= 0 V,_T_j= 25°C|–|–|1|μA|
|||_V_DS= 100 V,_V_GS= 0 V,<br>_T_j= 100°C2)|–|–|100||
|Gate-source leakage current|_I_GSS|_V_GS= 20 V,_V_DS= 0 V|–|–|100|nA|
|Drain-source on-state resistance|_R_DS(on)|_V_GS= 4.5 V,_I_D= 10 A|–|32.50|44.30|mΩ|
|||_V_GS= 10 V,_I_D= 10 A|–|24.50|28.00||
|Gate resistance2)|_R_G|–|–|1.86|–|Ω|
Data Sheet
Rev. 1.0 2024-05-03
4
**OptiMOS[ TM] 5 Automotive Power MOSFET, 100 V**
IAUCN10S5L280D
**==> picture [105 x 47] intentionally omitted <==**
|**Parameter**|**Symbol**|**Conditions**|**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|
||||min.|typ.|max.||
|**Dynamic Characteristics2)**|||||||
|Input capacitance|_C_iss|_V_GS= 0 V,_V_DS= 50 V,_f_= 1 MHz|–|519|675|pF|
|Output capacitance|_C_oss||–|100|130||
|Reverse transfer capacitance|_C_rss||–|6|9||
|Turn-on delay time|_t_d(on)|_V_DD= 50 V,_V_GS= 10 V,<br>_I_D= 10 A,_R_G= 3.5 Ω|–|3|–|ns|
|Rise time|_t_r||–|3|–||
|Turn-off delay time|_t_d(off)||–|10|–||
|Fall time|_t_f||–|2|–||
## **Gate Charge Characteristics[2)]**
|**Gate Charge Characteristics2)**|||||||
|---|---|---|---|---|---|---|
|Gate to source charge|_Q_gs|_V_DD= 50 V,_I_D= 10 A,<br>_V_GS= 0 to 10 V|–|1.7|2|nC|
|Gate to drain charge|_Q_gd||–|1.5|2||
|Gate charge total|_Q_g||–|7.6|10||
|Gate plateau voltage|_V_plateau||–|3.2|–|V|
## **Reverse Diode**
|**Reverse Diode**|||||||
|---|---|---|---|---|---|---|
|Diode continuous forward current2)|_I_S|_T_C= 25°C|–|–|20|A|
|Diode pulse current2)|_I_S,pulse|_T_C= 25°C,_t_ p= 100 μs|–|–|56||
|Diode forward voltage|_V_SD|_V_GS= 0 V,_I_F= 10 A,_T_ j= 25°C|–|0.9|1.1|V|
|Reverse recovery time2)|_t_rr|_V_R= 50 V,_I_F= 20 A<br>d_i_F/dt = 100 A/μs|–|26|–|ns|
|Reverse recovery charge2)|_Q_rr||–|17|–|nC|
1) Practically the current is limited by the overall system design including the customer-specific PCB.
2) The parameter is not subject to production testing – specified by design.
3) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.
Data Sheet
Rev. 1.0 2024-05-03
5
**OptiMOS[ TM] 5 Automotive Power MOSFET, 100 V** IAUCN10S5L280D
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## **Electrical characteristics diagrams 1 Power dissipation 2 Drain current**
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## **3 Safe operating area**
## **4 Max. transient thermal impedance**
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Data Sheet
Rev. 1.0 2024-05-03
6
**OptiMOS[ TM] 5 Automotive Power MOSFET, 100 V** IAUCN10S5L280D
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**5 Typ. output characteristics 6 Typ. drain-source on-state resistance**
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## **7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance**
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Data Sheet
Rev. 1.0 2024-05-03
7
**OptiMOS[ TM] 5 Automotive Power MOSFET, 100 V** IAUCN10S5L280D
**==> picture [105 x 47] intentionally omitted <==**
## **9 Typ. gate threshold voltage 10 Typ. capacitances**
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## **11 Typ. forward diode characteristics 12 Typ. avalanche characteristics**
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Data Sheet
Rev. 1.0 2024-05-03
8
**OptiMOS[ TM] 5 Automotive Power MOSFET, 100 V** IAUCN10S5L280D
## **13 Typical avalanche energy**
## **15 Typ. gate charge**
## **14 Drain-source breakdown voltage**
## **16 Gate charge waveforms**
Data Sheet
Rev. 1.0 2024-05-03
9
**OptiMOS[ TM] 5 Automotive Power MOSFET, 100 V**
IAUCN10S5L280D
## **Package Outline**
## **Footprint**
## **Packaging**
Data Sheet
Rev. 1.0 2024-05-03
10
**OptiMOS[ TM] 5 Automotive Power MOSFET, 100 V** IAUCN10S5L280D
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## **Revision History**
|**Revision History**|||
|---|---|---|
|**Revision**|**Date**|**Changes**|
|Revision 1.0|2024-05-03|Final Data Sheet|
Data Sheet
Rev. 1.0 2024-05-03
11
## **Trademarks**
All referenced product or service names and trademarks are the property of their respective owners.
## **Edition 2024-05-03**
## **IMPORTANT NOTICE**
**Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics **Infineon Technologies AG** ("Beschaffenheitsgarantie"). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby **© 2024 Infineon Technologies AG** disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of **All Rights Reserved.** intellectual property rights of any third party.
In addition, any information given in this document is subject **Do you have any questions about any** to customer's compliance with its obligations stated in this **aspect of this document?** document and any applicable legal requirements, norms and standards concerning customer's products and any use of the **Email: erratum@infineon.com** product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended **Document reference** for technically trained staff. It is the responsibility of **IAUCN10S5L280D-Data-Sheet-10-Infineon** customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact the nearest Infineon Technologies Office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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