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IAUC45N04S6L063HATMA1
Dual MOSFET, N Channel, 40 V, 40 V, 45 A, 45 A, 0.0063 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 6 Series
- Qualification: AEC-Q101
- Transistor Case Style: TDSON
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 41W
- Power Dissipation P Channel: 41W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 45A
- Continuous Drain Current Id P Channel: 45A
- Drain Source On State Resistance N Channel: 0.0063ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.361 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **IAUC45N04S6L063H** ## **OptiMOS[™] - 6 Power-Transistor** |**Product Summary**||| |---|---|---| |||| |_V_DS|40|V| |||| |_R_DS(on),max|6.3|mW| |||| |_I_D|45|A| ## **Features** - OptiMOS™ - power MOSFET for automotive applications PG-TDSON-8-57 - Half-Bridge - N-channel - Enhancement mode - Logic Level - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS compliant) - 100% Avalanche tested |Type|||Package||Marking| |---|---|---|---|---|---| ||||||| |IAUC45N04S6L063H|||PG-TDSON-8-57||6N04L063| **Maximum ratings per channel,** at _T_ j=25 °C, unless otherwise specified |**Maximum ratings per channel,**at_T_j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Unit**<br>**Value**|**Unit**| |Drain current|_I_D|_V_GS=10V,<br>ChipLimitation1,2)|59<br>A<br>45<br>15<br>134<br>~~ee~~|A| |||_V_GS=10V,<br>DC current3)||| |||Ta=85°C, VGS=10V,<br>RthJAon 2s2p2,4)||| |Pulsed drain current2)|_I_D,pulse<br>~~ee~~|_T_C=25°C,_t p_=100µs<br>~~ee~~||| |Avalanche energy, single pulse2)|_E_AS<br>~~rr~~|_I_D=9A,_R_g,min=25Ω<br>~~rr~~|38<br>mJ<br>~~rr~~|mJ| |Avalanche current, single pulse|_I AS_<br>~~a ~~|_R_g,min=25Ω<br> ~~a~~|9<br>A<br>~~ee~~|A| |Gate source voltage|_V_GS<br>~~rr~~|-<br>~~rr~~|±16<br>V<br>~~rr~~|V| |Power dissipation|_P_tot<br>~~rr~~|_T_C=25°C<br>~~rr~~|41<br>W<br>~~rr~~|W| |Operating and storage temperature|_T_j,_T_stg<br>~~rr~~|-<br>~~rr~~|-55 ... +175<br>°C<br>~~rr~~|°C| Rev. 1.0 page 1 2020-09-22 |**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics2)**<br>**Values**<br>~~ee~~<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics2)**<br>**Values**<br>~~ee~~<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics2)**<br>**Values**<br>~~ee~~<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics2)**<br>**Values**<br>~~ee~~<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics2)**<br>**Values**<br>~~ee~~<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics2)**<br>**Values**<br>~~ee~~<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics2)**<br>**Values**<br>~~ee~~<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics2)**<br>**Values**<br>~~ee~~<br>~~ee~~| |---|---|---|---|---|---|---|---| |Thermal resistance, junction - case<br>_R_thJC<br>-<br>-<br>-<br>3.7<br>K/W<br>Thermal resistance,<br>junction - ambient4)<br>_R_thJA<br>-<br>-<br>36<br>-<br>~~TEE~~|||||||| |**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified||=25 °C, unless otherwise specified||||| |**Static characteristics**|||||||| |Drain-source breakdown voltage||_V_(BR)DSS|_V_GS=0V,_I_D= 1mA|40|-|-|V| |Gate threshold voltage||_V_GS(th)|_V_DS=_V_GS,_I_D=9µA|1.2|1.6|2.0|| |Zero gate voltage drain current||_I_DSS|_V_DS=40V,_V_GS=0V,<br>_T_j=25°C|-|-|1|µA| ||||_V_DS=40V,_V_GS=0V,<br>_T_j=125°C2)|-|-|10|| |Gate-source leakage current||_I_GSS|_V_GS=16V,_V_DS=0V|-|-|100|nA| |Drain-source on-state resistance||_R_DS(on)|_V_GS=4.5V,_I_D=22A|-|7.4|8.5|mW| ||||_V_GS=10V,_I_D=22A|-|5.2|6.3|| Rev. 1.0 page 2 2020-09-22 |**Parameter**<br>~~ee ~~|**Parameter**<br>~~ee ~~|**Symbol**<br>**Conditions**<br> ~~ee~~|**Symbol**<br>**Conditions**<br> ~~ee~~|**min.**|**typ.**<br>**Values**|**max.**|**Unit**| |---|---|---|---|---|---|---|---| ||**Dynamic characteristics2)**||||||| ||Input capacitance|_C_iss||-|596|775|pF| ||Output capacitance|_C_oss|_V_GS=0V,_V_DS=25V,<br>_f_=1MHz|-|174|226|| ||Reverse transfer capacitance|Crss||-|16|23|| ||Turn-on delay time|_t_d(on)||-|2|-|ns| ||Rise time|_t_r|_V_DD=20V,_V_GS=10V,|-|1|-|| ||Turn-off delay time|_t_d(off)|_I_D=45A,_R_G=3.5W|-|6|-|| ||Fall time|_t_f||-|3|-|| ||**Gate Charge Characteristics2)**||||||| ||Gate to source charge|_Q_gs||-|2.0|2.5|nC| ||Gate to drain charge|_Q_gd|_V_DD=32V,_I_D=45A,|-|2.1|3.2|| ||Gate charge total|_Q_g|_V_GS=0 to 10V|-|10|13|| ||Gate plateau voltage|_V_plateau||-|3.3|-|V| ||**Reverse Diode**||||||| ||Diode continous forward current2)|_I_S|_T_C=25°C|-|-|36|A| ||Diode pulse current2)|_I_S,pulse|_T_C=25°C,_t p_=100µs|-|-|142|| ||Diode forward voltage|_V_SD|_V_GS=0V,_I_F=22A,<br>_T_j=25°C|-|0.8|1.1|V| ||Reverse recovery time2)|_t_rr|_V_R=20V,_I_F=45A,<br>d_i_F/d_t_=100A/µs|-|20|-|ns| ||Reverse recovery charge2)|_Q_rr||-|8|-|nC| - 1) Practically the current is limited by overall system design including customer specific PCB. - 2) The parameter is not subject to production test - specified by design. - 3) The product can operate at specified current based on best practice to minimize electromigration at the solder joint. For rare events and inrush currents the value may be exceeded. - 4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. Rev. 1.0 page 3 2020-09-22 ## **1 Power dissipation** ## **2 Drain current** **==> picture [470 x 653] intentionally omitted <==** **----- Start of picture text -----**<br> P tot = f( T C); V GS = 10 V I D = f( T C); V GS = 10 V<br>50 80<br>40<br>60<br>Chip limit<br>30<br>40<br>20<br>DC current<br>20<br>10<br>0 ols 0<br>0 50 100 150 200 0 50 100 150 200<br>T C [°C] T C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>I D = f( V DS); T C = 25 °C; D = 0 Z thJC = f( t p)<br>parameter: t p parameter: D = t p/ T<br>1000 10 [1]<br>0.5<br>10 [0]<br>1 µs 0.1<br>100<br>10 µs 0.05<br>0.01<br>10 [-1]<br>100 µs<br>single pulse<br>10<br>150 µs<br>10 [-2]<br>1 10 [-3]<br>0.1 1 10 100 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br> [W]<br> [A]<br>P tot I D<br> [A] [K/W]<br>I D<br>thJC<br>Z<br>**----- End of picture text -----**<br> Rev. 1.0 page 4 2020-09-22 ## **5 Typ. output characteristics** ## **6 Typ. drain-source on-state resistance** **==> picture [470 x 310] intentionally omitted <==** **----- Start of picture text -----**<br> I D = f( V DS); T j = 25 °C R DS(on) = f( I D); T j = 25 °C<br>parameter: V GS parameter: V GS<br>120 40<br>2.75 V<br>/<br>100<br>3 V<br>10 V 30<br>3.5 V<br>80<br>4.5 V<br>60 3.5 V 20<br>40 f<br>10 4.5 V<br>20 3.0 V<br>2.75 V 10 V<br>0 0<br>0 1 2 3 0 20 40 60 80<br>V DS [V] I D [A]<br>]W<br> [A] [m<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D = f( _V_ GS); _V_ DS = 6V parameter: _T_ j **8 Typ. drain-source on-state resistance** _R_ DS(on) = f( _T_ j); _I_ D = 22 A; _V_ GS = 10 V **==> picture [465 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 140 11<br>10<br>120 IT]<br>9<br>100<br>8<br>80<br>7<br>60 6<br>5<br>40<br>4<br>175 °C<br>20<br>25 °C 3<br>-55 °C<br>0<br>2<br>1.5 2 2.5 3 3.5 4 4.5<br>-60 -20 20 60 100 140 180<br>V GS [V] T j [°C]<br>]<br>W<br> [m<br> [A]<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Rev. 1.0 2020-09-22 page 5 ## **9 Typ. gate threshold voltage** _V_ GS(th) = f( _T_ j); _V_ GS = _V_ DS ## **10 Typ. capacitances** _C_ = f( _V_ DS); _V_ GS = 0 V; _f_ = 1 MHz parameter: _I_ D **==> picture [226 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>2<br>90 µA<br>1.5<br>9 µA<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [224 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4]<br>10 [3]<br>Ciss<br>Coss<br>10 [2]<br>Crss<br>10 [1]<br>0 10 20 30<br>V DS [V]<br> [pF]<br>C<br>**----- End of picture text -----**<br> ## **11 Typical forward diode characteristicis** IF = f(VSD) parameter: _T_ j ## **12 Avalanche characteristics** _I_ A S= f( _t_ AV) parameter: Tj(start) **==> picture [468 x 269] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3] 100<br>10 [2]<br>10<br>25 °C<br>175 °C 25 °C<br>10 [1] 100 °C<br>150 °C<br>10 [0] 1<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000<br>V SD [V] t AV [µs]<br> [A] [A]<br>I F I AV<br>**----- End of picture text -----**<br> Rev. 1.0 page 6 2020-09-22 **IAUC45N04S6L063H** ## **13 Avalanche energy** _E_ AS = f( _T_ j) ## **14 Drain-source breakdown voltage** _V_ BR(DSS) = f( _T_ j); _I_ D = 1 mA **==> picture [470 x 611] intentionally omitted <==** **----- Start of picture text -----**<br> 120 44<br>100<br>80 42<br>4.5 A<br>60<br>40 40<br>9 A<br>20<br>0 38<br>25 SN 75 125 175 -60 Pa -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>15 Typ. gate charge 16 Gate charge waveforms<br>V GS = f( Q gate); I D = 22 A pulsed<br>parameter: V DD<br>10<br>V GS<br>9 8 V<br>Q g<br>32 V<br>8<br>7<br>6<br>5<br>4 V gs(th)<br>3<br>2<br>Q g(th) Q sw Q gate<br>1<br>0 [ Q gs Q gd<br>0 5 10<br>Q gate [nC]<br> [V]<br> [mJ]<br>AS<br>E BR(DSS)<br>V<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br> Rev. 1.0 2020-09-22 page 7 ## **PG-TDSON-8: Outline** **==> picture [83 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> Footprint<br>|<br>Pint<br>Dimensions in mm<br>Packaging<br>**----- End of picture text -----**<br> Rev. 1.0 page 8 2020-09-22 ## **Published by Infineon Technologies AG 81726 Munich, Germany** ## **© Infineon Technologies AG 2020 All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2020-09-22 **IAUC45N04S6L063H** Cinfineon Revision History **Version** Date Changes Revision 1.0 22.09.2020 Final Datasheet ~~LY Ln Ln Ln Ln Ln Ln Lna7~~ Rev. 1.0 page 10 2020-09-22 Rev. 1.0 2020-09-22
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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