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HS1MFS
Standard Recovery Diode, 1 kV, 1 A, Single, 1.7 V, 75 ns, 35 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: TAIWAN SEMICONDUCTOR
- Product type: Standard Recovery Rectifier Diodes
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 2Pins
- Product Range: HS1xFS Series
- Qualification: -
- Diode Case Style: SOD-128
- Diode Configuration: Single
- Forward Voltage Max: 1.7V
- Forward Surge Current: 35A
- Reverse Recovery Time: 75ns
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1kV
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.076 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**HS1DFS - HS1MFS** Taiwan Semiconductor ## **1A, 200V-1000V High Efficient Surface Mount Rectifiers** ## FEATURES - Glass passivated junction chip - Ideal for automated placement - Low power loss, high efficiency - Fast switching for high efficiency - Low profile package - RoHS Compliant - Halogen-free according to IEC 61249-2-21 ## APPLICATIONS |KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS| |---|---|---| |PARAMETER|VALUE|UNIT| |IF(AV)|1|A| |VRRM|200 - 1000|V| |IFSM|35|A| |TJ MAX|150|°C| |Package|SOD-128|| |Configuration|Single Die|| - Freewheeling application - Switching mode converters and inverters, computer and telecommunication. ## MECHANICAL DATA - Case: SOD-128 - Molding compound meets UL 94V-0 flammability rating - Moisture sensitivity level: level 1, per J-STD-020 - Terminal: Pure tin plated leads, solderable per J-STD-002 - Meet JESD 201 class 2 whisker test - Polarity: As marked - Weight: 0.028 g (approximately) ## **SOD-128** |ABSOLUTE MAXIMUM RATINGS(TA= 25°C unless otherwise noted)<br>~~Cee~~|ABSOLUTE MAXIMUM RATINGS(TA= 25°C unless otherwise noted)<br>~~Cee~~|ABSOLUTE MAXIMUM RATINGS(TA= 25°C unless otherwise noted)<br>~~Cee~~|ABSOLUTE MAXIMUM RATINGS(TA= 25°C unless otherwise noted)<br>~~Cee~~|ABSOLUTE MAXIMUM RATINGS(TA= 25°C unless otherwise noted)<br>~~Cee~~|ABSOLUTE MAXIMUM RATINGS(TA= 25°C unless otherwise noted)<br>~~Cee~~|ABSOLUTE MAXIMUM RATINGS(TA= 25°C unless otherwise noted)<br>~~Cee~~|ABSOLUTE MAXIMUM RATINGS(TA= 25°C unless otherwise noted)<br>~~Cee~~|ABSOLUTE MAXIMUM RATINGS(TA= 25°C unless otherwise noted)<br>~~Cee~~| |---|---|---|---|---|---|---|---|---| |PARAMETER<br>~~Paes~~||SYMBOL HS1DFS<br>~~Paes~~<br>~~Mn~~|SYMBOL HS1DFS<br>~~Paes~~<br>~~Rt~~|HS1GFS HS1JFS<br>~~Paes~~<br>~~en~~|HS1GFS HS1JFS<br>~~Paes~~<br>~~I~~|HS1KFS HS1MFS UNIT<br>~~Paes~~<br>~~I~~|HS1KFS HS1MFS UNIT<br>~~Paes~~|HS1KFS HS1MFS UNIT<br>~~Paes~~| |Markingcode on the device<br>~~nr~~||~~nr~~<br>~~Mn~~<br>~~rs tr~~|HS1DFS<br>~~nr~~<br>~~Rt~~<br>~~tr~~|HS1GFS<br>~~nr~~<br>~~en~~<br>~~(rn~~|HS1JFS<br>~~nr~~<br>~~I~~<br>~~I~~|HS1KFS<br>~~nr~~<br>~~I~~<br>~~I~~|HS1MFS<br>~~nr~~<br>~~I~~|~~nr~~| |Repetitivepeak reverse voltage<br>~~rn~~||VRRM<br>~~Mn ~~<br>~~rn~~<br>~~rs tr~~<br>~~I~~|200<br> ~~Rt~~<br>~~rn~~<br>~~tr~~<br>~~I~~|400<br>~~en ~~<br>~~rn~~<br>~~(rn~~<br>~~(nn~~|600<br> ~~I~~<br>~~rn~~<br>~~I~~<br>~~I~~|800<br>~~I~~<br>~~rn~~<br>~~I~~<br>~~I~~|1000<br>~~rn~~<br>~~I~~<br>~~EN~~|V<br>~~rn~~| |Reverse voltage, total rms value<br>~~nr~~||VR(RMS)<br>~~rs tr~~<br>~~nr~~<br>~~I~~|140<br>~~tr ~~<br>~~nr~~<br>~~I~~|280<br> ~~(rn ~~<br>~~nr~~<br>~~(nn~~|420<br> ~~I~~<br>~~nr~~<br>~~I~~|560<br>~~I~~<br>~~nr~~<br>~~I~~|700<br>~~I~~<br>~~nr~~<br>~~EN~~|V<br>~~nr~~| |Forward current<br>~~oe~~||IF(AV)<br>~~I~~<br>~~_~~|1<br>~~I~~<br>~~(nn I~~<br>~~I~~<br>~~EN~~|||||A<br>~~-~~| |Surge peak forward<br>current, single half<br>sine-wave<br>superimposed on<br>ratedload perdiode<br>8.3ms at T<br>1.0ms at T<br>~~oe~~<br>~~a~~|8.3ms at TA= 25°C|IFSM<br>~~_~~<br>|35|||||A<br>~~-~~| ||1.0ms at TA= 25°C<br>||90<br>|||||A<br>~~-~~<br>| |Junction temperature<br>~~oe~~<br>~~a~~||TJ<br>~~_~~<br><br>~~Ss te~~|-55 to +150<br><br>~~te~~|||||°C<br>~~-~~<br>| |Storage temperature<br>~~arn~~||TSTG<br>~~rn~~<br>~~Ss te~~|-55 to +150<br>~~rn~~<br>~~te~~|||||°C<br>~~rn~~| 1 Version:B2004 **HS1DFS - HS1MFS** Taiwan Semiconductor |THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE| |---|---|---|---| |PARAMETER|SYMBOL|TYP|UNIT| |Junction-to-lead thermal resistance|RӨJL|29|°C/W| |Junction-to-ambient thermal resistance|RӨJA|51|°C/W| |Junction-to-case thermal resistance|RӨJC|22|°C/W| **Thermal Performance Note:** Units mounted on PCB (5mm x 5mm Cu pad test board) ## ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) |ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))| |---|---|---|---|---|---|---| |PARAMETER||CONDITIONS|SYMBOL|TYP|MAX|UNIT| |Forward voltage per diode(1)<br>~~__|~~|HS1DFS|IF= 0.5A, TJ= 25°C|VF<br> <br> <br>~~__|~~<br>~~Eee~~|0.80|-|V| |||IF= 1.0A, TJ= 25°C||0.85|1.00|V| |||IF= 0.5A, TJ= 125°C||0.65|-|V| |||IF= 1.0A, TJ= 125°C||0.71|0.80|V| ||HS1GFS<br>~~=~~|IF= 0.5A, TJ= 25°C<br>~~=~~||0.84<br>~~Ee~~|-<br>~~Ee~~|V<br>~~Ee~~| |||IF= 1.0A, TJ= 25°C<br>~~=~~||0.91<br>~~Ee~~|1.30<br>~~Ee~~|V<br>~~Ee~~| |||IF= 0.5A, TJ= 125°C<br>~~=~~||0.68<br>~~Ee~~|-<br>~~Ee~~|V<br>~~Ee~~| |||IF= 1.0A, TJ= 125°C<br>~~=~~||0.76<br>~~Ee~~|0.86<br>~~Ee~~|V<br>~~Ee~~| ||HS1JFS<br>~~=~~<br>~~=~~|IF= 0.5A, TJ= 25°C<br>~~= ~~<br>~~=~~||0.92<br> ~~Ee~~<br>~~EE~~|-<br>~~Ee~~<br>~~EE~~|V<br>~~Ee~~<br>~~EE~~| |||IF= 1.0A, TJ= 25°C<br>~~=~~||1.02<br>~~EE~~|1.70<br>~~EE~~|V<br>~~EE~~| |||IF= 0.5A, TJ= 125°C<br>~~=~~||0.73<br>~~EE~~|-<br>~~EE~~|V<br>~~EE~~| |||IF= 1.0A, TJ= 125°C<br>~~=~~<br>~~5~~||0.83<br>~~EE~~<br>~~Eee~~|1.02<br>~~EE~~<br>~~Eee~~|V<br>~~EE~~<br>~~Eee~~| ||HS1KFS<br>HS1MFS<br>~~=~~<br>~~__|~~|IF= 0.5A, TJ= 25°C<br>~~= ~~<br>~~__|~~<br>~~5~~||1.32<br> ~~EE~~<br>~~__|~~<br>~~Eee~~|-<br>~~EE~~<br>~~__|~~<br>~~Eee~~|V<br>~~EE~~<br>~~__|~~<br>~~Eee~~| |||IF= 1.0A, TJ= 25°C<br>~~__|~~<br>~~5~~||1.49<br>~~__|~~<br>~~Eee~~|1.70<br>~~__|~~<br>~~Eee~~|V<br>~~__|~~<br>~~Eee~~| |||IF= 0.5A, TJ= 125°C<br>~~__|~~<br>~~5~~||0.98<br>~~__|~~<br>~~Eee~~|-<br>~~__|~~<br>~~Eee~~|V<br>~~__|~~<br>~~Eee~~| |||IF= 1.0A, TJ= 125°C<br>~~__|~~<br>~~5~~||1.16<br>~~__|~~<br>~~Eee~~|1.39<br>~~__|~~<br>~~Eee~~|V<br>~~__|~~<br>~~Eee~~| |Reverse current @ rated VRper diode(2)<br>~~__|~~||TJ= 25°C<br>~~__|~~<br>~~5~~|IR<br>~~__|~~<br>~~Eee~~|-<br>~~__|~~<br>~~Eee~~|1<br>~~__|~~<br>~~Eee~~|µA<br>~~__|~~<br>~~Eee~~| |||TJ= 125°C<br>~~__|~~<br>~~5~~||-<br>~~__|~~<br>~~Eee~~|35<br>~~__|~~<br>~~Eee~~|µA<br>~~__|~~<br>~~Eee~~| |Reverse recovery time<br>~~pe~~|HS1DFS<br>HS1GFS<br>~~pe~~|IF=0.5A,IR=1.0A,<br>Irr=0.25A<br>~~5 ~~<br>~~pe~~|trr<br> ~~Eee~~<br>~~pe~~|-<br>~~Eee~~<br>~~pe~~|50<br>~~Eee~~<br>~~pe~~|ns<br>~~Eee~~<br>~~pe~~| ||HS1JFS<br>HS1KFS<br>HS1MFS<br>~~pe~~|||-<br>~~pe~~|75<br>~~pe~~|ns<br>~~pe~~| |Junction capacitance per diode<br>~~pe~~<br>~~=~~|HS1DFS<br>~~pe~~<br>~~=~~|1 MHz, VR=4.0V<br>~~pe~~|CJ<br>~~pe~~<br>~~=~~|20<br>~~pe~~<br>~~=~~|-<br>~~pe~~<br>~~=~~|pF<br>~~pe~~<br>~~=~~| ||HS1GFS<br>~~=~~|||17<br>~~=~~|-<br>~~=~~|pF<br>~~=~~| ||HS1JFS<br>~~=~~|||13<br>~~=~~|-<br>~~=~~|pF<br>~~=~~| ||HS1KFS<br>HS1MFS<br>~~=~~|||8<br>~~=~~|-<br>~~=~~|pF<br>~~=~~| (2) Pulse test with PW=30 ms 2 Version:B2004 **HS1DFS - HS1MFS** Taiwan Semiconductor |ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION| |---|---|---| |ORDERING CODE(1)|PACKAGE|PACKING| |HS1xFS M3G|SOD-128|3,500 / 7” reel| |HS1xFS M2G|SOD-128|14,000 / 13” reel| ## **Notes:** (1) “x” defines voltage from 200V(HS1DFS) to 1000V(HS1MFS) 3 Version:B2004 a?i **HS1DFS - HS1MFS** Taiwan Semiconductor © CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) ## **Fig.1 Forward Current Derating Curve** ## **Fig.2 Typical Junction Capacitance** **==> picture [207 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1.5<br>1<br>0.5<br>0<br>25 50 75 100 125 150<br>LEAD TEMPERATURE (°C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br> **Fig.3 Typical Reverse Characteristics** **==> picture [221 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>HS1DFS<br>HS1GFS<br>HS1JFS<br>HS1(K)MFS<br>10<br>f=1.0MHz<br>Vsig=50mVp-p<br>1<br>1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Fig.4 Typical Forward Characteristics** **==> picture [480 x 409] intentionally omitted <==** **----- Start of picture text -----**<br> HS1DFS HS1DFS<br>10 10<br>TJ=150°C TJ=150°C<br>1<br>TJ=125°C TJ=25°C<br>TJ=125°C<br>0.1 — ——— — 1 Af<br>0.01 TJ=25°C TJ=-55°C<br>Pulse width 300μs<br>1% duty cycle<br>0.001 —— 0.1 fi<br>10 20 30 40 50 60 70 80 90 100 0.4 0.6 0.8 1 1.2 1.4 1.6<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)<br>Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics<br>HS1GFS HS1GFS<br>10 10<br>TJ=150°C<br>1 TJ=150°C<br>0.1 TJ=125°C TJ=125°C TJ=25°C<br>__ __ — 1 SK<br>0.01<br>°<br>TJ=25°C TJ=-55 C<br>0.001<br>Pulse width 300μs<br>1% duty cycle<br>0.0001 Seeeel= > aeennne 0.1 fifeI)<br>10 20 30 40 50 60 70 80 90 100 0.4 0.6 0.8 1 1.2 1.4 1.6<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)<br>INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br> 4 Version:B2004 **HS1DFS - HS1MFS** Taiwan Semiconductor - ———————————————— **HS1DFS - HS1MFS** ## **Fig.7 Typical Reverse Characteristics** **==> picture [228 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> HS1JFS<br>100<br>TJ=150°C<br>10<br>TJ=125°C<br>1<br>0.1<br>TJ=25°C<br>0.01 Se<br>10 20 30 40 50 60 70 80 90 100<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>INSTANTANEOUS REVERSE CURRENT (μA)<br>**----- End of picture text -----**<br> **Fig.9 Typical Reverse Characteristics** **==> picture [228 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> HS1(K)MFS<br>100<br>TJ=150°C<br>10<br>TJ=125°C<br>1<br>0.1<br>0.01 °<br>TJ=25 C<br>0.001 Soe sec ce=iy<br>10 20 30 40 50 60 70 80 90 100<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>INSTANTANEOUS REVERSE CURRENT (μA)<br>**----- End of picture text -----**<br> ## **Fig.8 Typical Forward Characteristics** **==> picture [223 x 414] intentionally omitted <==** **----- Start of picture text -----**<br> HS1JFS<br>10<br>TJ=150°C<br>TJ=125°C TJ=25°C<br>1<br>TJ=-55°C<br>Pulse width 300μs<br>1% duty cycle<br>0.1 V//aan<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9<br>FORWARD VOLTAGE (V)<br>Fig.10 Typical Forward Characteristics<br>HS1(K)MFS<br>10<br>TJ=150°C<br>TJ=125°C<br>TJ=25°C<br>1<br>TJ=-55°C<br>Pulse width 300μs<br>1% duty cycle<br>0.1 /(tis<br>0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7<br>FORWARD VOLTAGE (V)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br> **Fig.11 Typical Transient Thermal Impedance** **==> picture [393 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>0<br>1<br>0.1<br>0.01<br>0.001<br>0.0001 2a<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>PULSE DURATION (s)<br>TRANSIENT THERMAL IMPEDANCE (°C/W)<br>**----- End of picture text -----**<br> 5 Version:B2004 **HS1DFS - HS1MFS** Taiwan Semiconductor ## PACKAGE OUTLINE DIMENSIONS **SOD-128** ## SUGGESTED PAD LAYOUT ## MARKING DIAGRAM P/N = Marking Code YW = Date Code F = Factory Code 6 Version:B2004 **HS1DFS - HS1MFS** Taiwan Semiconductor ## **Notice** Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version:B2004
Updated at April 27, 2026
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