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HP8MA2TB1
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 18 A, 18 A, 0.0096 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ROHM
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; P
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: HSOP
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 7W
- Power Dissipation P Channel: 7W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 18A
- Continuous Drain Current Id P Channel: 18A
- Drain Source On State Resistance N Channel: 0.0096ohm
- Drain Source On State Resistance P Channel: 0.0179ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.619 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 20, 2026