Illustrative purposes only
HGT1S10N120BNST
IGBT, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 Pins
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single IGBTs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Power Dissipation: 298W
- Transistor Mounting: Surface Mount
- DC Collector Current: 35A
- Power Dissipation Pd: 298W
- Transistor Case Style: TO-263AB
- Operating Temperature Max: 150°C
- Continuous Collector Current: 35A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 2.45V
- Collector Emitter Saturation Voltage Vce(on): 2.45V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 2.02 € |
| Current stock | 958 |
| Lead time | 7 days |