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HFA3134IHZ96
Bipolar Transistor Array, Dual NPN, 9 V, 26 mA
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- Manufacturer: RENESAS
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:9V; Power Dissipation Pd:-; DC Collector Current:26mA; DC Current Gain hFE:48hFE; Transistor Case Style:SOT-23; No. of Pins:6Pin
- MSL: MSL 2 - 1 year
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Power Dissipation NPN: -
- Power Dissipation PNP: -
- Transistor Case Style: SOT-23
- Transition Frequency NPN: 8.5GHz
- Transition Frequency PNP: -
- Operating Temperature Max: 85°C
- DC Current Gain hFE Min NPN: 48hFE
- DC Current Gain hFE Min PNP: -
- Continuous Collector Current NPN: 26mA
- Continuous Collector Current PNP: -
- Collector Emitter Voltage Max NPN: 9V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.85 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
DATASHEET ## HFA3134, HFA3135 Ultra High Frequency Matched Pair Transistors The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high fT enables the design of UHF amplifiers which exhibit exceptional stability. ## _**Ordering Information**_ |**PART NUMBER**<br>**(BRAND)**|**TEMP.**<br>**RANGE (°C)**|**PACKAGE**|**PKG.**<br>**DWG. #**| |---|---|---|---| |HFA3134IH96<br>(04/<br>)<br>04|-40 to 85|6 Ld SOT23<br>Tape and Reel|P6.064| |HFA3134IHZ96<br>(4Z/<br>) (Note)<br>4Z|-40 to 85|6 Ld SOT23<br>Tape and Reel (Pb-free)|P6.064| |HFA3135IH96<br>(05/<br>)<br>05|-40 to 85|6 Ld SOT23<br>Tape and Reel|P6.064| |HFA3135IHZ96<br>(5Z/<br>) (Note)<br>Z5|-40 to 85|6 Ld SOT23<br>Tape and Reel (Pb-free)|P6.064| NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. FN4445 Rev 2.00 August 12, 2005 ## _**Features**_ - NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz - NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 100 - NPN Noise Figure (50) at 1.0GHz. . . . . . . . . . . . . 2.6dB - PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz - PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 57 - PNP Noise Figure (50) at 900MHz . . . . . . . . . . . . 4.6dB - Small Package (EIAJ-SC74 Compliant). . . . . . . .SOT23-6 - Pb-Free Plus Anneal Available (RoHS Compliant) ## _**Applications**_ - VHF/UHF Amplifiers - VHF/UHF Mixers - IF Converters - Synchronous Detectors ## _**Pinouts**_ **==> picture [76 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> HFA3134<br>(SOT23)<br>TOP VIEW<br>1 6<br>Q1<br>2 5<br>3 Q2 4<br>**----- End of picture text -----**<br> **==> picture [76 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> HFA3135<br>(SOT23)<br>TOP VIEW<br>1 6<br>Q1<br>2 5<br>3 Q2 4<br>**----- End of picture text -----**<br> Page 1 of 5 FN4445 Rev 2.00 August 12, 2005 HFA3134, HFA3135 ## **Absolute Maximum Ratings** Collector to Emitter Voltage (RB10kto GND) . . . . . . . . . . . .11V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V Collector Current . . . . . . . . . . . . . . . . . . . . . . . . 14mA at TJ =150°C 26mA at TJ =125°C Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA ESD Rating Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V (Per MIL-STD-883 Method 3015.7) ## **Thermal Information** Thermal Resistance (Typical, Note 1) JA (°C/W) SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . . 350 Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C Maximum Storage Temperature Range. . . . . . . . . . -65°C to 150°C Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 300°C (Soldering 10s, Lead Tips Only) ## **Operating Conditions** Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 85°C _CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied._ NOTES: 1. JA is measured with the component mounted on an evaluation PC board in free air. 2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current specification. ## **Electrical Specifications** TA = 25°C |**Electrical Specifications**<br>TA= 25°C|||||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|(NOTE 3)<br>**TEST**<br>**LEVEL**|**MIN**|**TYP**|**MAX**|**UNITS**| |**DC CHARACTERISTICS FOR HFA3134 (NPN)**|||||||| |Collector to Base Breakdown Voltage|V(BR)CBO|IC= 10A, IE= 0|A|12|21|-|V| |Collector to Emitter Breakdown Voltage|V(BR)CEO|IC= 100A, IB= 0|A|4|9|-|V| ||V(BR)CER|IC= 100A, RB= 10k|A|11|17|-|V| |Emitter to Base Breakdown Voltage (Note 4)|V(BR)EBO|IE= 10A, IC= 0|B|-|6|-|V| |Collector-Cutoff-Current|ICEO|VCE= 6V, IB= 0|A|-5|-|5|nA| |Collector-Cutoff-Current|ICBO|VCB= 8V, IE= 0|A|-5|-|5|nA| |Emitter-Cutoff-Current (Note 5)|IEBO|VEB= 1V, IC= 0|B|-|1|-|pA| |Collector to Collector Leakage|||C|-|1|-|nA| |Collector to Emitter Saturation Voltage|VCE(SAT)|IC= 10mA, IB= 1mA|A|-|95|250|mV| |Base to Emitter Voltage (Note 5)|VBE|IC= 10mA, VCE= 2V|A|-|780|1000|mV| |Q1to Q2Base to Emitter Voltage Match<br>(Note 5)|VBE|IC= 10mA, VCE= 2V|A|-|1.2|6|mV| |||IC= 1mA, VCE= 2V|A|-|1.0|6|mV| |||IC= 0.1mA, VCE= 2V|A|-|0.7|6|mV| |Base to Emitter Voltage Drift||IC= 10mA|C|-|-1.5|-|mV/°C| |DC Forward-Current Transfer Ratio<br>(Note 5)|hFE|IC= 10mA, VCE= 2V|A|48|80|200|| |||IC= 1mA, VCE= 2V|A|48|87|200|| |||IC= 0.1mA, VCE= 2V|A|48|90|200|| |||IC= 10mA, VCE= 5V|A|48|96|200|| |||IC= 1mA, VCE= 5V|A|48|96|200|| |||IC= 0.1mA, VCE= 5V|A|48|100|200|| |Q1to Q2Current Transfer Ratio Match|hFE|1mAIC 10mA,<br>1VVCE 5V|A|-|2|8|%| |Early Voltage|VA|IC= 1mA,VCE= 3V|A|20|30|-|V| Page 2 of 5 FN4445 Rev 2.00 August 12, 2005 HFA3134, HFA3135 ## **Electrical Specifications** TA = 25°C **(Continued)** |**Electrical Specifications**<br>TA= 25°C **(Co**|**ntinued)**||||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|(NOTE 3)<br>**TEST**<br>**LEVEL**|**MIN**|**TYP**|**MAX**|**UNITS**| |**DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN)**|||||||| |Noise Figure|NF|f = 1.0GHz, IC= 10mA,<br>1VVCE 5V, ZS= 50<br>f = 1.0GHz, IC= 1mA,<br>1VVCE 5V, ZS= 50|B|-|2.4|-|dB| ||||B|-|2.6|-|dB| |Current Gain-Bandwidth Product<br>(Note 5)|fT|IC= 10mA, VCE= 5V<br>IC= 1mA, VCE= 5V|B|-|8.5|-|GHz| ||||B|-|3|-|GHz| |Power Gain-Bandwidth Product|fMAX|IC= 10mA, VCE= 5V|B|-|7.5|-|GHz| |Base to Emitter Capacitance||VBE= -0.5V|B|-|600|-|fF| |Collector to Base Capacitance||VCB= 3V|B|-|500|-|fF| ## **Electrical Specifications** TA = 25°C |**Electrical Specifications**<br>TA= 25°C|||||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|(NOTE 3)<br>**TEST**<br>**LEVEL**|**MIN**|**TYP**|**MAX**|**UNITS**| |**DC CHARACTERISTICS FOR HFA3135 (PNP)**|||||||| |Collector to Base Breakdown Voltage|V(BR)CBO|IC= -10A, IE= 0|A|12|21|-|V| |Collector to Emitter Breakdown Voltage|V(BR)CEO|IC= -100A, IB= 0|A|4|14|-|V| ||V(BR)CER|IC= -100A, RB= 10k|A|11|23|-|V| |Emitter to Base Breakdown Voltage (Note 4)|V(BR)EBO|IE= -10A, IC= 0|B|-|5|-|V| |Collector-Cutoff-Current|ICEO|VCE= -6V, IB= 0|A|-5|-|5|nA| |Collector-Cutoff-Current|ICBO|VCB= -8V, IE= 0|A|-5|-|5|nA| |Emitter-Cutoff-Current|IEBO|VEB= -1V, IC= 0|B|-|TBD|-|pA| |Collector to Collector Leakage|||B|-|1|-|nA| |Collector to Emitter Saturation Voltage|VCE(SAT)|IC= -10mA, IB= -1mA|A|-|150|250|mV| |Base to Emitter Voltage|VBE|IC= -10mA, VCE= -2V|A|-|850|1000|mV| |Q1to Q2Base to Emitter Voltage Match|VBE|IC= -10mA, VCE= -2V|A|-|1|6|mV| |||IC= -1mA, VCE= -2V|A|-|1|6|mV| |||IC= -0.1mA, VCE= -2V|A|-|2|6|mV| |DC Forward-Current Transfer Ratio|hFE|IC= -10mA, VCE= -2V|A|15|40|125|| |||IC= -1mA, VCE= -2V|A|15|47|125|| |||IC= -0.1mA, VCE= -2V|A|15|52|125|| |||IC= -10mA, VCE= -5V|A|15|47|125|| |||IC= -1mA, VCE= -5V|A|15|53|125|| |||IC= -0.1mA, VCE= -5V|A|15|57|125|| |Q1to Q2Current Gain Match|hFE|-1mAIC -10mA,<br>-1VVCE -5V|A|-|1|8|%| |Early Voltage|VA|IC= -1mA,VCE= -3V|A|15|24|-|V| |Base to Emitter Voltage Drift||IC= -10mA|C|-|-1.4|-|mV/°C| Page 3 of 5 FN4445 Rev 2.00 August 12, 2005 HFA3134, HFA3135 ## **Electrical Specifications** TA = 25°C **(Continued)** |**Electrical Specifications**<br>TA= 25°C **(C**|**ontinued)**||||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|(NOTE 3)<br>**TEST**<br>**LEVEL**|**MIN**|**TYP**|**MAX**|**UNITS**| |**DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP)**|||||||| |Noise Figure|NF<br> <br> <br> <br>|f = 900MHz, IC= -10mA,<br>-1VVCE -5V, ZS= 50|B|-|5.2|-|dB| |||f = 900MHz, IC= -1mA,<br>-1VVCE -5V, ZS= 50|B|-|4.6|-|dB| |Current Gain-Bandwidth Product|fT<br>|IC= -10mA, VCE= -5V|B|-|7|-|GHz| |Power Gain-Bandwidth Product|fMAX<br>|IC= -10mA, VCE= -5V|B|-|TBD|-|GHz| |Base to Emitter Capacitance||VBE= 0.5V|B|-|550|-|fF| |Collector to Base Capacitance||VCB= -3V|B|-|400|-|fF| ## NOTES: 3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only. 4. Measuring VEBO can degrade the transistor hFE and hFE match. 5. See Typical Performance Curves for more information. ## _**Typical Performance Curves**_ TA = 25°C, Unless Otherwise Specified **==> picture [511 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> IB = 200 A Q1<br>20 100m<br>Q1 Q2<br>18 10m<br>Q2 IB = 160 A Q1<br>16 1m<br>Q1 Q2<br>14 100 <br>Q2 IB = 120 A IC<br>12 10 <br>10 Q1 1 <br>8 Q1 Q2 IB = 80 A 100n IB<br>10n<br>6<br>Q2 Q1 IB = 40 A 1n<br>4<br>Q2<br>2 100p<br>10p<br>0 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>BASE TO EMITTER VOLTAGE (V)<br>COLLECTOR TO EMITTER VOLTAGE (V)<br>COLLECTOR CURRENT (mA)<br>COLLECTOR CURRENT AND BASE CURRENT (A)<br>**----- End of picture text -----**<br> **FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE** **FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs BASE TO EMITTER VOLTAGE** Page 4 of 5 FN4445 Rev 2.00 August 12, 2005 HFA3134, HFA3135 ## _**Typical Performance Curves**_ TA = 25°C, Unless Otherwise Specified **(Continued)** **==> picture [506 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 130<br>10<br>120 VCE = 5V<br>110 Q2 Q1 Q1 VCE = 5V 9 V CE = 3V<br>8<br>100<br>7<br>90<br>6<br>80<br>Q2 VCE = 3V 5<br>70<br>VCE = 1V 4<br>60 VCE = 1V<br>3<br>50<br>2<br>40<br>1<br>30<br>20 0.1 1 10 100<br>1n 1n 100n 1 10 100 1m 10m 100m<br>COLLECTOR CURRENT (mA)<br>COLLECTOR CURRENT (A)<br>DC CURRENT GAIN<br>GAIN BANDWIDTH (GHz)<br>**----- End of picture text -----**<br> **FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT** ## **FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT** **==> picture [233 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 1n<br>COLLECTOR = OPEN<br>100p<br>10p<br>1p<br>0.1p<br>0 -0.3 -0.6 -0.9 -1.2 -1.5 -1.8 -2.1 -2.4 -2.7 -3.0<br>BASE TO EMITTER VOLTAGE (V)<br>EMITTER LEAKAGE CURRENT (A)<br>**----- End of picture text -----**<br> **FIGURE 5. NPN EMITTER CUTOFF CURRENT vs BASE TO EMITTER VOLTAGE** © Copyright Intersil Americas LLC 2000-2005. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html _Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries._ For information regarding Intersil Corporation and its products, see www.intersil.com Page 5 of 5 FN4445 Rev 2.00 August 12, 2005
Updated at April 23, 2026
Renesas Electronics is a premier global supplier of advanced semiconductor solutions, driving innovation across automotive, industrial, infrastructure, and Internet of Things (IoT) applications. Recognized for a comprehensive portfolio that spans the entire signal chain, Renesas empowers engineers to design secure, intelligent, and highly efficient embedded systems for a rapidly evolving technological landscape. Our selection of Renesas components features a strong emphasis on precision timing and frequency management solutions. We offer a robust range of standard oscillators, timers, and pulse generators engineered to deliver exceptional accuracy and stability. These reliable clocking devices are essential for synchronizing complex digital operations and ensuring optimal performance in demanding circuit designs. In addition to timing components, our inventory includes essential discrete semiconductors and interface solutions. This encompasses high-performance single MOSFETs and bipolar transistors for efficient power routing, alongside versatile I/O expanders that simplify system connectivity. To support modern wireless integration, we also provide select Renesas RF transceivers, WLAN adaptors, and Bluetooth modules, equipping developers with the critical building blocks needed for advanced communication systems.
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