HFA3134IHZ96

Bipolar Transistor Array, Dual NPN, 9 V, 26 mA

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Manufacturer: RENESAS
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:9V; Power Dissipation Pd:-; DC Collector Current:26mA; DC Current Gain hFE:48hFE; Transistor Case Style:SOT-23; No. of Pins:6Pin
MSL: MSL 2 - 1 year
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Dual NPN
Power Dissipation NPN: -
Power Dissipation PNP: -
Transistor Case Style: SOT-23
Transition Frequency NPN: 8.5GHz
Transition Frequency PNP: -
Operating Temperature Max: 85°C
DC Current Gain hFE Min NPN: 48hFE
DC Current Gain hFE Min PNP: -
Continuous Collector Current NPN: 26mA
Continuous Collector Current PNP: -
Collector Emitter Voltage Max NPN: 9V
Collector Emitter Voltage Max PNP: -

Datasheet

Updated at February 27, 2026