HFA3096BZ

Bipolar Transistor Array, Complementary NPN and PNP, 8 V, 8 V, 37 mA, 37 mA, 150 mW

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Manufacturer: RENESAS
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:8V; Power Dissipation Pd:150mW; DC Collector Current:37mA; DC Current Gain hFE:130hFE; Transistor Case Style:SOIC; No. o
MSL: MSL 3 - 168 hours
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 16Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Complementary NPN and PNP
Power Dissipation NPN: 150mW
Power Dissipation PNP: 150mW
Transistor Case Style: SOIC
Transition Frequency NPN: 8GHz
Transition Frequency PNP: 5.5GHz
Operating Temperature Max: 125°C
DC Current Gain hFE Min NPN: 130hFE
DC Current Gain hFE Min PNP: 130hFE
Continuous Collector Current NPN: 37mA
Continuous Collector Current PNP: 37mA
Collector Emitter Voltage Max NPN: 8V
Collector Emitter Voltage Max PNP: 8V

Delivery and price
Units per pack	250
Price	5.2 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at April 16, 2026