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HFA15PB60PBF
Fast / Ultrafast Diode, 600 V, 15 A, Single, 1.7 V, 60 ns, 150 A
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- Manufacturer: INFINEON
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- No. of Pins: 3 Pin
- Diode Case Style: TO-247AC
- Diode Configuration: Single
- Forward Voltage Max: 1.7V
- Forward Surge Current: 150A
- Reverse Recovery Time: 60ns
- Average Forward Current: 15A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 2.37 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
~~T@R Rectifier~~ HFA15PB60PbF ~~[|~~ ## **Ultrafast, Soft Recovery Diode** ## **Features** - Ultrafast Recovery - Ultra soft Recovery - Very Low IRRM - Very Low Qrr - Specified at Operating Conditions - Lead-Free ## **Benefits** - Reduced RFI and EMI - Reduced Power Loss in Diode and Switching Transistor - Higher Frequency Operation - Reduced Snubbing - Reduced Parts Count ## **Description** International Rectifier's HFA15PB60 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 15 amps continuous current, the HFA15PB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the ultrafast recovery diode product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The ultrafast recovery diode features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These ultrafast advantages can help to significantly reduce snubbing, component count and heat sink sizes. The HFA15PB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. **VR = 600V VF(TYP)* = 1.3V IF(AV) = 15A Qrr(typ.) = 80nC IRRM (typ.) = 4.0A trr (typ.) = 19ns DI (rec)M/dt (typ.) *= 160A/** µs TO-247AC (Modified) |**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**| |---|---|---|---|---| |||**Form**|**Quantity**|| |HFA15PB60PbF|TO-247AC|Tube|25|HFA15PB60PbF| ## **Absolute Maximum Ratings** ||**Parameter**|**Max.**|**Units**| |---|---|---|---| |VR|Cathode -to – Anode Voltage|600|V| |IF@ TC= 100°C|Continuous Forward Current|15|A| |IFSM|Single Pulse Forward Current|150|| |IFRM|Maximum Repetitive Forward Current|60|| |PD@TC= 25°C|Maximum Power Dissipation|74|W| |PD@TC= 100°C|Maximum Power Dissipation|29|| |TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55 to + 150|°C| ## *** 125°C** 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 ~~IéaR~~ HFA15PB60PbF ~~|~~ ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** |~~ee~~<br>~~ee~~|**Parameter**<br>~~tn nD~~<br>~~ee~~|**Min.**<br>~~nD~~<br>~~e~~<br>~~es~~|**Typ. **<br>~~Is~~<br>~~e~~|**Max.**<br>~~(I~~<br>~~e~~|**Units**<br>~~(I~~|**Conditions**| |---|---|---|---|---|---|---| |VBR<br>~~ee~~<br>~~ee~~<br>~~=e~~|Cathode Anode Breakdown Voltage<br>~~tn nD~~<br>~~ee~~<br>~~=e~~|600<br>~~nD ~~<br>~~e~~<br>~~es~~<br>~~=e~~|–––<br> ~~Is~~<br>~~e~~<br>~~=e~~|–––<br>~~(I~~<br>~~e~~<br>~~=e~~|V<br>~~(I~~<br>~~=e~~<br>~~eee~~|IR= 100µA<br>~~=e~~| |VFM<br>~~ee~~<br>~~=e~~<br>~~es~~|Max Forward Voltage<br>~~ee~~<br>~~=e~~|–––<br>~~e~~<br>~~es~~<br>~~=e~~|1.3<br>~~e~~<br>~~=e~~|1.7<br>~~e~~<br>~~=e~~||IF= 15A<br>See Fig. 1<br>~~=e~~| |||–––<br>~~=e~~<br>~~ee~~|1.5<br>~~=e~~<br>~~eee~~|2.0<br>~~=e~~<br>~~eee~~||IF= 30A<br>~~=e~~| |||–––<br>~~=e~~<br>~~ee~~<br>~~Se~~|1.2<br>~~=e~~<br>~~eee~~<br>~~Se~~|1.6<br>~~=e~~<br>~~eee~~||IF= 30A,TJ= 125°C<br>~~=e~~| |IRM<br>~~of~~<br>~~es~~<br>~~a~~|Max Reverse Leakage Current<br>~~of~~<br>~~ry~~|–––<br>~~ee ~~<br>~~of~~<br>~~Se~~|1.0<br> ~~eee~~<br>~~of~~<br>~~Se~~|10<br>~~eee~~<br>~~of~~|µA<br>~~eee~~<br>~~of~~|VR= VRRatedSee Fig. 2<br>TJ= 125°C,VR= 0.8 x VRRated<br>~~of~~| |||–––<br>~~of~~<br>~~Se~~<br>~~ry~~|400<br>~~of~~<br>~~Se~~<br>~~I~~|1000<br>~~of~~<br>~~Is~~||| |CT<br>~~es~~<br>~~a~~|Junction Capacitance<br>~~ry~~|–––<br>~~Se~~<br>~~ry~~|25<br>~~Se~~<br>~~I~~|50<br>~~Is~~|pF|VR= 200V See Fig. 3| |LS<br>~~es~~<br>~~a~~|Series Inductance<br>~~ry~~<br>~~ee~~|–––<br>~~Se~~<br>~~ry ~~<br>~~ee~~|12<br>~~Se~~<br> ~~I ~~|–––<br> ~~Is~~|nH|Measured lead to lead 5mm from<br>package body| ||**Parameter**|**Min.**|**Typ.**|**Max. Units**|**Max. Units**|**Conditions**|**Conditions**| |---|---|---|---|---|---|---|---| |trr<br>~~Se~~|Reverse Recovery Time See Fig. 5,10<br>~~Se~~|–––<br>~~Se~~|19<br>~~Se~~|–––<br>~~Se~~|ns<br>~~Se~~|IF= 1.0A, dif/dt = 200A/µs, VR= 30V<br>~~Se~~|| |trr1<br>~~Se~~||–––<br>~~Se~~|42<br>~~Se~~|60<br>~~Se~~||TJ= 25°C<br>~~Se~~|= 25°C<br>= 125°C<br>= 25°C IF=15A<br>= 125°C VR=200V<br>= 25°C di/dt = 200A/µs<br>= 125°C<br>= 25°C<br>= 125°C<br>~~Se~~| |trr2<br>~~Se~~||–––<br>~~Se~~|74<br>~~Se~~|120<br>~~Se~~||TJ= 125°C<br>~~Se~~|| |IRRM1<br>~~Se~~<br>~~a~~|Peak Recovery Current See Fig. 6<br>~~Se~~<br>~~a~~<br>~~a~~|–––<br>~~Se~~<br>~~a~~|4.0<br>~~Se~~<br>~~a~~|6.0<br>~~Se~~<br>~~a~~|A<br>~~Se~~<br>~~a~~|TJ= 25°C I<br>~~Se~~<br>~~a~~|| |IRRM2<br>~~a~~<br>~~Ss~~||–––<br>~~a~~|6.5<br>~~a~~|10<br>~~a~~||TJ= 125°C V<br>~~a~~|| |Qrr1<br>~~a~~<br>~~Ss~~|Reverse Recovery Charge See Fig.7<br>~~a~~<br>~~a~~|–––<br>~~a~~|80<br>~~a~~|180<br>~~a~~|nC<br>~~a~~|TJ= 25°C di/dt = 200A/µs<br>~~a~~|| |Qrr2<br>~~Ss~~||–––|220|600||TJ= 125°C|| |di(rec)M/dt1 <br>~~Ss~~|Peak Rate of Fall of Recovery Current<br>During tb See Fig.8<br>~~a~~|–––|188|–––|A/µs|TJ= 25°C|| |di(rec)M/dt2 <br>~~Ss~~<br>~~a~~||–––|160|–––||TJ= 125°C|| **Thermal –Mechanical Characteristics** ||**Parameter**|**Min.**|**Typ. **|**Max.**|**Units**| |---|---|---|---|---|---| |Tlead <br>~~oe~~|Lead Temperature<br>~~oe~~|–––<br>~~oe~~|–––<br>~~eee~~|300<br>~~oe~~|°C<br>~~ae~~| |RJC<br>~~oe~~|Thermal Resistance,Junction to Case<br>~~oe~~|–––<br>~~oe~~|–––<br>~~eee~~|1.7<br>~~oe~~|K/W<br>~~ae~~<br><br>~~eee~~| |RJA <br>~~oe~~<br>~~es~~<br>~~a~~|Thermal Resistance,Junction to Ambient<br>~~oe~~<br>~~ns~~<br>|–––<br>~~oe~~<br>~~s~~<br>~~ts~~<br>|–––<br>~~eee~~<br>~~s~~<br>|40<br>~~oe~~<br>~~s~~<br>|| |RCS<br>~~oe~~<br>~~es~~<br>~~a~~|Thermal Resistance, Case to Heat Sink<br>~~oe~~<br>~~ns~~<br>|–––<br>~~oe~~<br>~~s~~<br>~~ts~~<br><br>~~ee~~|0.25<br>~~eee~~<br>~~s~~<br><br>~~ee~~|–––<br>~~oe~~<br>~~s~~<br><br>~~ee~~|| |Wt<br>~~oe~~<br>~~es~~<br>~~a e~~|Weight<br>~~oe~~<br>~~ns~~<br>~~ee~~|–––<br>~~oe ~~<br>~~s~~<br>~~ts~~<br>~~e~~<br>~~ee~~|6.0<br> ~~eee ~~<br>~~s~~<br>~~e~~<br>~~ee~~|–––<br> ~~oe ~~<br>~~s~~<br>~~e~~<br>~~ee~~|g<br> ~~ae~~<br>~~e~~<br>~~eee~~| |||–––<br>~~ts~~<br>~~e~~<br>~~ee~~|0.21<br>~~e~~<br>~~ee~~|–––<br>~~e~~<br>~~ee~~|(oz)<br>~~e~~<br>~~eee~~| |T<br>~~a e~~<br>~~i~~|Mounting Torque<br>~~ee~~<br>~~i~~|6.0<br>~~ts~~<br>~~e~~<br>~~ee ~~<br>~~i~~|–––<br>~~e~~<br> ~~ee ~~<br>~~i~~|12<br>~~e~~<br> ~~ee ~~<br>~~i~~|Kg-cm<br>~~e~~<br> ~~eee~~<br>~~i~~| |||5.0<br>~~i~~|–––<br>~~i~~|10<br>~~i~~|lbf•in<br>~~i~~| Mounting Surface, Flat, Smooth and Greased 2 Submit Datasheet Feedback February 19, 2015 www.irf.com © 2015 International Rectifier **==> picture [544 x 386] intentionally omitted <==** **----- Start of picture text -----**<br> HFA15PB60PbF<br>IR.}}8§=§=. —hco__<br>10000<br>100<br>T = 150°CJ<br>1000<br>100 T = 125J °C<br>7 10 =<br>1<br>0.1<br>}Y T = 150°CJ == T = 25J °C<br>A<br>0.01<br>T = 125°CJ 0 200 400 600<br>10 T = 25°C Reverse Voltage - V (V)R<br>J<br>Fig. 2 - Typical Reverse Current vs. Reverse Voltage<br>A<br>100<br>T = 25°C<br>J<br>Hf,l/ A<br>1<br>1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4<br> Forward Voltage Drop - V (V)FM<br>**----- End of picture text -----**<br> **==> picture [235 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>T = 25°C<br>J<br>10<br>10 100 1000<br>Reverse Voltage - V (V)R<br>**----- End of picture text -----**<br> **Fig. 1** - Maximum Forward Voltage Drop vs. Instantaneous Forward Current **Fig. 3** - Typical Junction Capacitance vs. Reverse Voltage **==> picture [460 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br> 1 D = 0.50<br>0.20<br>0.10<br>PDM<br>0.05<br>0.1<br>0.02 t1<br>0.01 SINGLE PULSE t 2<br>(THERMAL RESPONSE)<br>Notes:<br>1. Duty factor D = t / t 1 2<br>2. Peak T J = P DM x Z thJC + T C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br> **Fig. 4** - Maximum Thermal Impedance Zthjc Characteristics 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 ~~a~~ HFA15PB60PbF **==> picture [196 x 595] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>I = 30AF<br>I = 15AF<br>I = 5.0AF<br>80 A It<br>ren sen<br>-. 7.<br>~e -~ = -<br>ve. = -. see SC ‘.<br>ve. . = ee. _ -<br>60 —eg_a ts- .<br>ss me.<br>. al<br>40 ——<br>20<br>V = 200VR<br>T = 125°CJ<br>T = 25°CJ<br>0<br>100 1000<br>di /dt - (A/µs)f<br> - Typical Reverse Recovery vs. dif/dt f/dt /dt<br>800<br>V = 200VR<br>T = 125°C T = 25 J J ° C<br>[=| ¢<br>r vA<br>0<br>600<br>I = 30AF ¢ ?<br>rd<br>I = 15AF 4 °<br>I = 5.0AF ¢@ o o” o”<br>? o”<br>400 e<br>° e<br>4? oo”<br>° rd<br>e Cd<br>? ? e<br>? id<br>°” @<br>? id<br>200 Ud o”<br>o_o os<br>ue? --<br>Seer” oS<br>0<br>100 1000<br>di /dt - (A/µs)f<br>**----- End of picture text -----**<br> **Fig. 5** - Typical Reverse Recovery vs. dif/dt f/dt /dt **Fig. 7** - Typical Stored Charge vs. dif/dt **==> picture [190 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>V = 200VR<br>T = 125°CJ<br>T = 25°CJ<br>Ulé<br>20<br>I = 30AF é¢<br>I = 15AF ’, ”<br>I = 5.0AF 6 ¢<br>15 4 4<br>o ?<br>44<br>44<br>y Ad Gg<br>eo , 4<br>4“tf oY<br>10 ¢o,f ¢ g Z|<br>9° 7<br>a <a fe<br>70<br>ce<br>066<br>on? C2<br>Aig<br>cee<br>5 ZES<br>0<br>100 1000<br>di /dt - (A/µs)f<br>**----- End of picture text -----**<br> **Fig. 6** - Typical Recovery Current vs. dif/dt **==> picture [201 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>V = 200V R<br>T = 125°CJ<br>T = 25°C J<br>I = 30AF<br>I = 15AF<br>1000 Jf<br>I F = 5.0A Cd<br>ee<br>6<br>Loe49%<br>Po?<br>? ?<br>eo?<br>oe<br>“Aad<br>Oo°<br>es?Oo?<br>Oe ge<br>Sa<br>. Se<br>oF<br>100<br>100 1000<br>di /dt - (A/µs)f<br>**----- End of picture text -----**<br> **Fig. 8** - Typical di(rec)M/dt vs. dif/dt 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 ~~I@R~~ HFA15PB60PbF ~~oS~~ **==> picture [466 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>IF trr<br>ta tb<br>0<br>REVERSE RECOVERY CIRCUIT<br>V = 200VR 2 Q rr 4<br>I RRM 0.5 I RRM<br>di(rec)M/dt 5<br>0.01 <br>0.75 IRRM<br>L = 70µH<br>D.U.T. O 1 di /dtf<br>D<br> dif/dt 1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr and<br>ADJUST G IRFP250 through zero crossing IRRM<br>2. IRRM - Peak reverse recovery current trr X IRRM<br>3. trr - Reverse recovery time measured Qrr = a<br> from zero crossing point of negative 2<br>S going IF to point where a line passing<br> through 0.75 IRRM and 0.50 IRRM 5. di(rec)M/dt - Peak rate of change of<br> extrapolated to zero current current during tb portion of trr<br>**----- End of picture text -----**<br> ## REVERSE RECOVERY CIRCUIT **Fig. 9** - Reverse Recovery Parameter Test Circuit **Fig. 10** - Reverse Recovery Waveform and Definitions 5 ~~TE~~ 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 HFA15PB60PbF ## **TO-247AC Package Outline** (Dimensions are shown in millimeters (inches)) **==> picture [372 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> E1<br>E A Ø P Ø P1<br>E2/2 A2 D2<br>! !<br>' ' I<br>Q A -P<br>! \<br>f ! S<br>D1<br>E2 D<br>\ !<br>D D E E<br>! ! A 4a rY<br>1 THERMAL PAD<br>L1<br>ry _ _ A1<br>L C C<br>= b 4 i<br>!<br>2x e b2 C (Ref.)<br>b<br>e1<br>! PLATING - b1, b3, b5 i BASE METAL<br>A (Ref.) i os i]<br>vS c1<br>i<br>i rY<br>SEE C b, b2, b4<br>SECTIONAL<br>**----- End of picture text -----**<br> ## **TO-247AC Part Marking Information** **==> picture [51 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> LC LC<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 6 Submit Datasheet Feedback February 19, 2015 www.irf.com © 2015 International Rectifier ~~16aR~~ HFA15PB60PbF ~~[~~ ## **Qualification Information[† ]** |**Qualification Information[† ]**||| |---|---|---| |**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††|| |**Moisture Sensitivity Level**|TO-247AC|N/A| |**RoHS Compliant**|Yes|| - Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ - †† Applicable version of JEDEC standard at the time of product release. **IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 7 www.irf.com ~~_—~~ ~~_~~ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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