HAF2015RJ-EL-E

To our customers, 

## Old Com an Name in Catalo s and Other Documents p y g 

On April 1[st] , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. 

Renesas Electronics website: http://www.renesas.com 

April 1[st] , 2010 Renesas Electronics Corporation 

Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. 

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## **HAF2015RJ** 

Silicon N Channel MOS FET Series Power Switching 

REJ03G1141-0300 Rev.3.00 Aug 27, 2007 

## **Description** 

This FET has the over temperature shut-down capability sensing to the junction temperature. 

This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. 

## **Features** 

- Logic level operation (5 to 6 V Gate drive) 

- High endurance capability against to the short circuit 

- Built-in the over temperature shut-down circuit 

- Temperature hysteresis type. 

- High density mounting. 

## **Outline** 

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RENESAS Package code: PRSP0008DD-A RENESAS Package code: PRSP0008DD-D<br>(Package name: SOP-8 <FP-8DA> ) (Package name: SOP-8 <FP-8DAV> )<br>6 5 6 5<br>7 7<br>8 8 1, 3  Source<br>2, 4  Gate<br>5, 6, 7, 8   Drain<br>1  [2 3 4] 1  [2 3 4]<br>D D D D<br>7 8 5 6<br>2 4<br>G Gate resistor G Gate resistor<br>Tmperature Self  Gate Tmperature Self  Gate<br>sensing return shutdown sensing return shutdown<br>circuit circuit circuit circuit circuit circuit<br>1 3<br>MOS1 S MOS2 S<br>**----- End of picture text -----**<br>


REJ03G1141-0300  Rev.3.00  Aug 27, 2007 Page 1 of 9 

**HAF2015RJ** 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**||||
|---|---|---|---|
||||(Ta = 25°C)|
|**Item**|**Symbol**|**Value**|**Unit**|
|Drain to source voltage|VDSS|60|V|
|Gate to source voltage|VGSS|16|V|
||VGSS|–2.5|V|
|Drain current|ID|2|A|
|Drainpeak current|ID(pulse) Note 1|4|A|
|Body-drain diode reverse drain current|IDR|2|A|
|Avalanche current|IAP Note 4|0.54|A|
|Avalanche energy|EAR Note 4|25|mJ|
|Channel dissipation|PchNote 2|2|W|
|Channel dissipation|PchNote 3|1.5|W|
|Channel temperature|Tch|150|°C|
|Storage temperature|Tstg|–55 to +150|°C|



Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 

2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 

3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 

4. Tch = 25°C, Rg > 50 Ω 

## **Typical Operation Characteristics** 

|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|---|---|---|---|---|---|---|
|Input voltage|VIH|3.5|—|—|V||
||VIL|—|—|1.2|V||
|Input current<br>(Gate non shut down)|IIH1|—|—|100|µA|Vi = 5 V, VDS= 0|
||IIH2|—|—|50|µA|Vi = 3.5 V, VDS= 0|
||IIL|—|—|1|µA|Vi = 1.2 V, VDS= 0|
|Input current<br>(Gate shut down)|IIH(sd)1|—|0.53|—|mA|Vi = 8 V, VDS= 0|
||IIH(sd)2|—|0.2|—|mA|Vi = 3.5 V, VDS= 0|
|Shut down temperature|Tsd|—|175|—|°C|Channel temperature|
|Hysteresis temperature|Thr|—|120|—|°C|Channel temperature|
|Gate operation voltage|VOP|3.5|—|12|V||



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**HAF2015RJ** 

## **Electrical Characteristics** 

(Ta = 25 ° C) 

|**Electrical Characteristics**||||||(Ta = 25°C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|Drain current|ID1|0.7|—|—|A|VGS= 3.5 V, VDS= 2 V|
||ID2|—|—|10|mA|VGS= 1.2 V, VDS= 2 V|
|Drain to source breakdown voltage|V (BR)DSS|60|—|—|V|ID= 10 mA, VGS= 0|
|Gate to source breakdown voltage|V (BR)GSS|16|—|—|V|IG= 500µA, VDS= 0|
||V (BR)GSS|–2.5|—|—|V|IG= –100µA, VDS= 0|
|Gate to source leak current|IGSS1|—|—|100|µA|VGS= 5 V, VDS= 0|
||IGSS2|—|—|50|µA|VGS= 3.5 V, VDS= 0|
||IGSS3|—|—|1|µA|VGS= 1.2 V, VDS= 0|
||IGSS4|—|—|–100|µA|VGS= –2.4 V, VDS= 0|
|Input current (shut down)|IGS(op)1|—|0.53|—|mA|VGS= 8 V, VDS= 0|
||IGS(op)2|—|0.2|—|mA|VGS= 3.5 V, VDS= 0|
|Zero gate voltage drain current|IDSS1|—|—|10|µA|VDS= 60 V, VGS= 0|
||IDSS2|—|—|10|µA|VDS= 48 V, VGS= 0<br>Ta = 125°C|
|Gate to source cutoff voltage|VGS(off)|1.4|—|2.5|V|ID= 1 mA, VDS= 10 V|
|Static drain to source on state resistance|RDS(on)|—|130|200|mΩ|ID= 1 A, VGS= 5 VNote 5|
||RDS(on)|—|110|160|mΩ|ID= 1 A, VGS= 10 VNote 5|
|Forward transfer admittance||yfs||0.5|2.5|—|S|ID= 1 A, VDS= 10 VNote 5|
|Output capacitance|Coss|—|139|—|pF|VDS= 10 V, VGS= 0<br>f = 1 MHz|
|Turn-on delaytime|td(on)|—|4.2|—|µs|ID= 1 A<br>VGS= 5 V<br>RL= 30Ω|
|Rise time|tr|—|20|—|µs||
|Turn-off delaytime|td(off)|—|1|—|µs||
|Fall time|tf|—|1|—|µs||
|Body-drain diode forward voltage|VDF|—|0.82|—|V|IF= 2 A, VGS= 0|
|Body-drain diode reverse recovery time|trr|—|55|—|ns|IF= 2 A, VGS= 0<br>diF/dt = 50 A/µs|
|Over load shut down operation timeNote6|tos1|—|15|—|ms|VGS= 5 V, VDD= 16 V|



Notes: 5. Pulse test 

6. Including the junction temperature rise of the over loaded condition. 

REJ03G1141-0300  Rev.3.00  Aug 27, 2007 Page 3 of 9 

**HAF2015RJ** 

## **Main Characteristics** 

Power vs. Temperature Derating 

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4.0<br>Test Condition:<br>  When using the glass epoxy board<br>  (FR4  40 × 40 × 1.6 mm), PW < 10 s<br>3.0<br>2.0<br>1.0<br>0<br>0 50 100 150 200<br>Ambient Temperature   Ta  (°C)<br>Typical Output Characteristics<br>5<br>10 V Pulse Test<br>8 V<br>4 6 V<br>5 V<br>3<br>4 V<br>2<br>VGS = 3.5 V<br>1<br>0<br>0 2 4 6 8 10<br>Drain to Source Voltage    VDS   (V)<br>Drain to Source Saturation Voltage vs.<br>Gate to Source Voltage<br>0.25<br>Pulse Test<br>0.20<br>0.15<br>ID = 1 A<br>0.10<br>0.5 A<br>0.05<br>0.2 A<br>0<br>0 2 4 6 8 10<br>Gate to Source Voltage   VGS  (V)<br>1 Drive Operation<br>2 Drive Operation<br>Channel Dissipation    Pch  (W)<br>   (A)<br>D<br>Drain Current    I<br>   (V)<br>DS (on)<br>Drain to Source Saturation Voltage                                    V<br>**----- End of picture text -----**<br>


Maximum Safe Operation Area 

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50<br>Thermal shut down<br>20 Operation area<br>10<br>5<br>2<br>1<br>Operation in<br>0.5 this area is<br>limited by RDS (on)<br>0.2<br>Ta = 25°C<br>0.1<br>1 shot pulse<br>0.05 1 Drive Operation<br>0.03<br>0.3 0.5 1 2 5 10 20 50 100<br>Drain to Source Voltage  VDS  (V)<br>Note 7:<br>  When using the glass epoxy board<br>  (FR4  40 × 40 × 1.6 mm)<br>Typical Transfer Characteristics<br>2.5<br>2.0<br>Tc = –25°C<br>25°C<br>1.5 75°C<br>1.0<br>0.5<br>VDS = 10 V<br>Pulse Test<br>0<br>0 1 2 3 4 5<br>Gate to Source Voltage    VGS  (V)<br>PW = 10 ms<br>100<br>µs<br>1 ms<br>DC Operation (PW ≤Note 7<br> 10 s)<br>   (A)<br>D<br>Drain Current    I<br>   (A)<br>D<br>Drain Current    I<br>**----- End of picture text -----**<br>


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Static Drain to Source on State Resistance<br>vs. Drain Current<br>500<br>200<br>VGS = 5 V<br>100<br>10 V<br>50<br>20<br>Pulse Test<br>10<br>0.1 0.2 0.5 1 2 5 10 20<br>Drain Current    ID  (A)<br>)Ω<br>    (m<br>DS (on)<br>Drain to Source on State Resistance                                    R<br>**----- End of picture text -----**<br>


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**HAF2015RJ** 

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Static Drain to Source on State Resistance Forward Transfer Admittance vs.<br>vs. Temperature Drain Current<br>0.25 10<br>Pulse Test 0.5 A VDS = 10 V<br>0.2 A Pulse Test<br>5<br>0.20 ID = 1 A Tc = –25°C<br>25°C<br>VGS = 5 V 2<br>0.15 ID = 1 A<br>1<br>0.2 A 0.5 A<br>75°C<br>0.10<br>0.5<br>10 V<br>0.05<br>0.2<br>0 0.1<br>–40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 5<br>Case Temperature    Tc   (°C) Drain Current   ID   (A)<br>Body-Drain Diode Reverse<br>Recovery Time Switching Characteristics<br>500 100<br>VGS = 5 V, VDD = 30 V<br>50 PW = 300 µs, duty ≤ 1 %<br>200<br>20 tr<br>100<br>10<br>50 5 td(on)<br>2<br>20 di / dt = 50 A / VGS = 0, Ta = 25°Cµs 1 td(off) tf<br>10 0.5<br>0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5<br>Reverse Drain Current    IDR   (A) Drain Current    ID  (A)<br>Reverse Drain Current vs. Typical Capacitance vs.<br>Source to Drain Voltage Drain to Source Voltage<br>5 1000<br>Pulse Test<br>VGS = 5 V<br>4<br>300<br>3<br>100<br>0 V<br>2<br>30<br>1<br>VGS = 0<br>f = 1 MHz<br>0 10<br>0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50<br>Source to Drain Voltage  VSD  (V) Drain to Source Voltage   VDS   (V)<br>)Ω<br>    (m<br>DS (on)<br>          R<br>Forward Transfer Admittance  |yfs|   (S)<br>Static Drain to Source on State Resistance<br>s)<br>µ<br>Switching Time   t  (<br>Reverse Recovery Time   trr  (ns)<br>  (A)<br>DR<br>Capacitance   C  (pF)<br>Reverse Drain Current   I<br>**----- End of picture text -----**<br>


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**HAF2015RJ** 

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Gate to Source Voltage vs. Shutdown Case Temperature vs.<br>Shutdown Time of Load-Short Test Gate to Source Voltage<br>12 200<br>10<br>180<br>8<br>VDD = 16 V 160<br>6<br>140<br>4<br>120<br>2<br>ID = 0.2 A<br>0 100<br>0.0001 0.001 0.01 0.1 1 0 2 4 6 8 10<br>Shutdown Time of Load-Short Test  PW  (S) Gate to Source Voltage    VGS   (V)<br>Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)<br>10<br>D = 1<br>1<br>0.5<br>0.1<br>θch – f (t) = γ s (t) •  θch – f<br>θch – f = 125°C/W, Ta = 25°C<br>0.01 When using the glass epoxy board<br>(FR4  40 × 40 × 1.6 mm)<br>PW<br>PDM D = T<br>0.001<br>PW<br>T<br>0.0001<br>10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000 10000<br>Pulse Width   PW  (S)<br>Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)<br>10<br>D = 1<br>1<br>0.5<br>0.1<br>θch – f (t) = γ s (t) •  θch – f<br>θch – f = 166°C/W, Ta = 25°C<br>0.01 When using the glass epoxy board<br>(FR4  40 × 40 × 1.6 mm)<br>PW<br>PDM D = T<br>0.001<br>PW<br>T<br>0.0001<br>10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000 10000<br>Pulse Width   PW  (S)<br>0.1<br>0.1<br>0.2<br>0.2<br>0.02<br>0.02<br>0.05<br>0.05<br>0.01<br>0.01<br>1shot pulse<br>1shot pulse<br>C)<br>   (V) °<br>GS<br>Gate to Source Voltage    V<br>Shutdown Case Temperature   Tc  (<br> s  (t)<br>γ<br>Normalized Transient Thermal Impedance<br> s  (t)<br>γ<br>Normalized Transient Thermal Impedance<br>**----- End of picture text -----**<br>


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**HAF2015RJ** 

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Switching Time Test Circuit<br>Vin Monitor Vout<br>Monitor<br>D.U.T.<br>RL<br>Vin VDD<br>5 V 50 Ω = 30 V<br>**----- End of picture text -----**<br>


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Waveform<br>90%<br>Vin 10%<br>Vout 10% 10%<br>90% 90%<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


REJ03G1141-0300  Rev.3.00  Aug 27, 2007 Page 7 of 9 

**HAF2015RJ** 

## **Package Dimensions** 

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C.|.Tt™—C.a Package NameSOP-8 P-SOP8-3.95 JEITA Package Code× 4.9-1.27 [CSCO RENESAS CodePRSP0008DD-A  S/S” Previous CodeFP-8DA MASS[Typ.]0.085g<br>* [1] D<br>bp<br>8 5 b1<br>i i<br>Es Ea<br>Index mark<br>1 4 Terminal cross section<br>Z * [3] bp x M NOTE)1.2. DIMENSIONS "*1(Nom)" AND "*2"DO NOT INCLUDE MOLD FLASH.DIMENSION "*3" DOES NOT<br>| oe) INCLUDE TRIM OFFSET.<br>Oo e<br>Reference Dimension in Millimeters<br>L1 | Symbol Ld Min Nom Max<br>D 4.90 5.3<br>LC [f=)] EQ<br>E 3.95<br>CL [f=)] |<br>Sa A2<br>a A1 0.10 0.14 0.25<br>A 1.75<br>CL [[—l=T]<br>bp 0.34 0.42 0.50<br>LH <= L \, es b1 0.40<br>c 0.19 0.22 0.25<br>- -—}—} c1 0.20  |<br>CL [f=)]<br>Detail F fel 0° | 8°<br>el y a HE 5.80 [—T 6.10 6.20 |<br>e 1.27<br>[o{[—| [—|<br>x 0.25<br>CL [[—l—T]<br>y 0.1<br>CL [[—l—T]<br>Z 0.75<br>CL [[=l=T]<br>a L 0.40 0.60 1.27<br>L1 1.08<br>DC T= T=}<br>F<br>2*E HE c1 c<br>A A1<br>**----- End of picture text -----**<br>


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Cca Package NameSOP-8 |.t™t—YC(‘(SWTTUCdTTTCSSC*d P-SOP8-3.95 JEITA Package Code× 4.9-1.27 RENESAS CodePRSP0008DD-D Previous CodeFP-8DAV MASS[Typ.]0.085g<br>* [1] D<br>8 5 bp<br>Index mark<br>1 4 Terminal cross section NOTE)1. DIMENSIONS "*1(Nom)" AND "*2"<br>Z DO NOT INCLUDE MOLD FLASH.<br>* [3] bp x M (Ni/Pd/Au plating) 2. DIMENSION "*3" DOES NOTINCLUDE TRIM OFFSET.<br>| me)<br>e<br>Reference Dimension in Millimeters<br>Oo | Symbol Ey Min Nom Max<br>L1 LC [f=).] D 4.90 5.3<br>E 3.95<br>CL [f=)]<br>A2<br>CL [[—J—] |<br>a A1 0.10 0.14 0.25 |<br>A 1.75<br>re bp 0.34 0.40 0.46<br>ooao CL L[|—|[— b1 [= l=T [—|<br>= L  \, ee cc1 0.15 0.20 0.25<br>Ll Sa<br>0° 8°<br>y fe,a HE 5.80 [—T 6.10 6.20 |<br>Detail F Lol—|[—| e 1.27<br>x 0.25<br>CL [[—l—T]<br>y 0.1<br>CL [[—l—T]<br>Z 0.75<br>LC [[=l=T]<br>a L 0.40 0.60 1.27<br>L1 1.08<br>DC T= T=}<br>F<br>E E<br>2* H c<br>A<br>A1<br>**----- End of picture text -----**<br>


REJ03G1141-0300  Rev.3.00  Aug 27, 2007 Page 8 of 9 

**HAF2015RJ** 

## **Ordering Information** 

|**Part No.**|**Quantity**|**Shipping Container**|
|---|---|---|
|HAF2015RJ-EL|2500pcs/Reel|Embossed tape|



REJ03G1141-0300  Rev.3.00  Aug 27, 2007 Page 9 of 9 

Sales Strategic Planning Div.    Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 

## Notes: 

1.   This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 

2.   Renesas shall have no liability  for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 

3.   You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 

4.   All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however,  is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information  with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 

5.   Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 

6.   When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application.  Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 

7.   With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 

8.   Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: 

- (1) artificial life support devices or systems 

- (2) surgical implantations 

- (3) healthcare intervention (e.g., excision, administration of medication, etc.) 

- (4) any other purposes that pose a direct threat to human life 

- Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 

9.   You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 

10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures.  Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 

11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 

12. This document may not be reproduced or duplicated, in any form, in  whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. 

## **RENESAS SALES OFFICES** 

http://www.renesas.com 

Refer to " **http://www.renesas.com/en/network** " for the latest and detailed information. 

## **Renesas Technology America, Inc.** 

450 Holger  Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408)  382-7500, Fax: <1> (408)  382-7501 

## **Renesas Technology Europe Limited** 

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628)  585-100, Fax: <44> (1628)  585-900 

## **Renesas Technology (Shanghai) Co., Ltd.** 

Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21)  5877-1818, Fax: <86> (21)  6887-7898 

## **Renesas Technology Hong Kong Ltd.** 

7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 

## **Renesas Technology Taiwan Co., Ltd.** 

10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2)  2715-2888, Fax: <886> (2)  2713-2999 

## **Renesas Technology Singapore Pte. Ltd.** 

1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 

## **Renesas Technology Korea Co., Ltd.** 

Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2)  796-3115, Fax: <82> (2)  796-2145 

## **Renesas Technology Malaysia Sdn. Bhd** 

Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 

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© 2007. Renesas Technology Corp., All rights reserved.  Printed in Japan. Colophon .7.0