HAF1010RJ-EL-E

Target Specifications Datasheet 

## **HAF1010RJ** 

## Silicon P Channel MOS FET Series Power Switching 

R07DS1361EJ0200 Rev.2.00 Sep 06, 2016 

## **Description** 

This FET has the over temperature shut-down capability sensing to the junction temperature.  This FET has the built-in over temperature shut-down circuit in the gate area.  And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. 

## **Features** 

Logic level operation to (–4 to –6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit. 

High density mounting 

Power supply voltage applies 12 V and 24 V. 

## **Outline** 

RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DA>)) 

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5 6 7 8<br>6 5<br>7 D D D D<br>8<br>[3 4]<br>1 [2]<br>4 1, 2, 3 Source<br>G Gate Resistor Current 4 Gate<br>Limitation<br>Circuit 5, 6, 7, 8 Drain<br>Temperature Latch Gate<br>Sensi ng Circuit Shut- down<br>Circuit Circuit<br>S S S<br>1 2 3<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

(Ta = 25°C) 

||||(Ta = 25°C)|
|---|---|---|---|
|**Item**|**Symbol**|**Ratings **|**Unit**|
|Drain to source voltage|VDSS|–60|V|
|Gate to source voltage|VGSS|–16|V|
|Gate to source voltage|VGSS|2.5|V|
|Drain current|ID|–5|A|
|Drainpeak current|ID (pulse)Note1|–10|A|
|Body-drain diode reverse drain current|IDR|–5|A|
|Cannel dissipation|PchNote2|2.5|W|
|Cannel temperature|Tch|150|C|
|Storage temperature|Tstg|–55 to +150|C|



Notes: 1. PW  10 s, duty cycle  1% 

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 

R07DS1361EJ0200  Rev.2.00 Sep 06, 2016 

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**Target Specifications** 

**HAF1010RJ** 

## **Typical Operation Characteristics** 

(Ta = 25°C) 

|||||||(Ta = 25°C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|Input voltage|VIH|–3.5|—|—|V||
||VIL|—|—|–1.2|V||
|Input current<br>(Gate non shut down)|IIH1|—|—|–100|A|Vi = –8V, VDS=0|
||IIH2|—|—|–50|A|Vi = –3.5V, VDS=0|
||IIL|—|—|–1|A|Vi = –1.2V, VDS=0|
|Input current<br>(Gate shut down)|IIH(sd)1|—|–0.8|—|mA|Vi = –8V, VDS=0|
||IIH(sd)2|—|–0.35|—|mA|Vi = –3.5V, VDS=0|
|Shut down temperature|Tsd|—|175|—|C|Cannel temperature|
|Gate operation voltage|Vop|–3.5|—|–12|V||



## **Electrical Characteristics** 

(Ta = 25°C) 

|||||||(Ta = 25°C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|Drain current|ID1|–1.5|—|—|A|VGS= –3.5 V, VDS= –2 V|
|Drain current|ID2|—|—|–10|mA|VGS= –1.2 V, VDS= –2 V|
|Drain to source breakdown voltage|V(BR)DSS|–60|—|—|V|ID= –10 mA, VGS= 0|
|Gate to source breakdown voltage|V(BR)GSS|–16|—|—|V|IG= –800A, VDS= 0|
|Gate to source breakdown voltage|V(BR)GSS|2.5|—|—|V|IG= 100A, VDS= 0|
|Gate to source leak current|IGSS1|—|—|–100|A|VGS= –8 V, VDS= 0|
||IGSS2|—|—|–50|A|VGS= –3.5 V, VDS= 0|
||IGSS3|—|—|–1|A|VGS= –1.2 V, VDS= 0|
||IGSS4|—|—|100|A|VGS= 2.4 V, VDS= 0|
|Input current (shut down)|IGS(OP)1|—|–0.8|—|mA|VGS= –8 V, VDS= 0|
||IGS(OP)2|—|–0.35|—|mA|VGS= –3.5 V, VDS= 0|
|Zerogate voltage drain current|IDSS|—|—|–10|A|VDS= –60 V, VGS= 0|
|Gate to source cut off voltage|VGS(off)|–1.1|—|–2.25|V|VDS= –10 V, ID= –1 mA|
|Forward transfer admittance||yfs||2|4|—|S|ID=–2.5 A, VDS=–10 Vnote3|
|Static drain to source on state<br>resistance|RDS(on)|—|200|340|m|ID= –2.5 A, VGS= –4 Vnote3|
||RDS(on)|—|140|200|m|ID= –2.5 A, VGS= –10 Vnote3|
|Output capacitance|Coss|—|326|―|pF|VDS= –10 V, VGS= 0,<br>f = 1 MHz|
|Turn-on delaytime|td(on)|—|2|―|s|VGS= –5 V, ID= –2.5 A, RL=<br>12|
|Rise time|tr|—|7.6|—|s||
|Turn off delaytime|td(off)|—|3.2|―|s||
|Fall time|tf|—|3.2|—|s||
|Body-drain diode forward voltage|VDF|—|–0.9|—|V|IF= –5 A, VGS= 0|
|Body-drain diode reverse recovery<br>time|trr|—|77|—|ns|IF= –5 A, VGS= 0<br>diF/dt = 50 A/s|
|Over lord shut down<br>operation timenote4|tos1|—|4.4|—|ms|VGS= –5 V, VDD= –16 V|
||tos2|—|2|—|ms|VGS= –5 V, VDD= –24 V|



Notes: 3. Pulse test 

4. Including the junction temperature rise of the lorded condition 

R07DS1361EJ0200  Rev.2.00 Sep 06, 2016 

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**Target Specifications** 

**HAF1010RJ** 

## **Main Characteristics** 

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Power vs. Temperature Derating<br>4<br>Test condition.<br>When using the glass epoxy board.<br>3 (FR4  40 x 40 x 1.6 mm), (PW ≤ 10s)<br>2<br>1<br>0 50 100 150 200<br>Case Temperature   Tc  (°C)<br>Typical Output Characteristics<br>–10<br>–10 V –6 V<br>–8 V<br>–8<br>–4 V<br>–6<br>V      = –3.5 VGS<br>–4<br>–2<br>Pulse Test<br>0 –2 –4 –6 –8 –10<br>Drain to Source Voltage   VDS (V)<br>Drain to Saturation Voltage vs.<br>Gate to Source Voltage<br>–2.0<br>Pulse Test<br>–1.6<br>–1.2<br>–0.8 I     D = –5 A<br>–2.5 A<br>–0.4<br>–1 A<br>0 –2 –4 –6 –8 –10<br>Gate to Source Voltage  VGS  (V)<br>Channel Dissipation   Pch  (W)<br>   (A)<br>D<br>Drain Current  I<br>(V)<br>DS(on)<br>V<br>Drain to Source Saturation Voltage<br>**----- End of picture text -----**<br>


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Maximum Safe Operation Area<br>-100<br>Ta = 25°C Thermal shut down<br>operation area<br>-30<br>-10<br>-3<br>-1<br>-0.3<br>Operation<br>-0.01 in this area<br>is limited by RDS(on)<br>-0.03<br>-0.3 -0.5 -1 -2 -5 -10 -20 -50 -100<br>Drain Source Voltage   VDS (V)<br>Note 5:<br>When using the glass epoxy board.<br>( FR4  40 x 40 x 1.6 mm)<br>Typical Transfer Characteristics<br>–5 V      = –10 VDS –25°C 25°C<br>Pulse Test Tc = 75°C<br>–4<br>–3<br>–2<br>Tc = 75°C<br>–1<br>25°C<br>–25°C<br>0 –1 –2 –3 –4 –5<br>Gate to Source Voltage   VGS (V)<br>Static Drain to Source State Resistance<br>vs. Drain Current<br>1000<br>Pulse Test<br>500<br>V      = –4 VGS<br>200<br>–10 V<br>100<br>50<br>20<br>10<br>–0.1 –0.2 –0.5 –1 –2 –5 –10<br>Drain Current   ID (A)<br>1 ms<br>PW = 10 ms<br>Note5<br>DC Operation (<br>PW≤10s)<br>100<br>    (A) μs<br>D<br>Drain Current   I<br>   (A)<br>D<br>Drain Current  I<br>)Ω<br>(m<br>DS(on)<br>R<br>Drain Source On Sate Resistance<br>**----- End of picture text -----**<br>


R07DS1361EJ0200  Rev.2.00 Sep 06, 2016 

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**Target Specifications** 

**HAF1010RJ** 

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Drain to Source On State Resistance Forward Transfer Admittance vs.<br>vs. Temperature Drain Current<br>500 10<br>Pulse Test VDS = –10 V Tc = –25°C<br>5<br>Pulse Test<br>400<br>2<br>ID = –5 A<br>–2.5 A 1 25°C<br>300<br>0.5<br>V GS = –4 V –1 A 75°C<br>0.2<br>200<br>–5 A 0.1<br>–2.5 A<br>–1 A 0.05<br>100<br>VGS = –10 V<br>0.02<br>0 0.01<br>–25 0 25 50 75 100 125 –0.01 –0.1 –1 –10<br>Case Temperature  Tc (°C) Drain Current   ID (A)<br>Body to Drain  Diode Reverse<br>Recovery Time Switching Characteristics<br>1000 100<br>50<br>500<br>20<br>t<br>200 10 d(off) tr<br>5<br>100 t f<br>2<br>50 1 td(on)<br>0.5<br>20 di / dt = 50 A / VGS = 0, Ta = 25μs°C 0.2 VPW = 300  GS  = –10 V, Vμs,  duty  DD  = < –30 V1 %<br>10 0.1<br>–0.1 –0.2 –0.5 –1 –2 –5 –10 –0.1 –0.2 –0.5 –1 –2 –5 –10<br>Reverse Drain Current    IDR (A) Drain Current    ID  (A)<br>Reverse Drain Current vs.  Typical capacitance vs.<br>Source to Drain Voltage Drain to Source Voltage<br>–5 10000<br>Pulse Test VGS = 0<br>f = 1 MHz<br>-10 V<br>–4<br>–3<br>1000<br>–2<br>-5 V VGS = 0 V<br>–1<br>Coss<br>100<br>0 –0.4 –0.8 –1.2 –1.6 –2.0 0 –10 –20 –30 –40 –50 –60<br>Source to Drain Voltage   VSD (V) Drain to Source   VDS  (V)<br>)Ω<br>(m<br>DS(on)<br>R<br>Forward Transfer Admittance |yfs|  (S)<br>Drain Source On State Resistance<br>s)<br>μ<br>Switching Time  t  (<br>Reverse Recovery Time trr  (ns)<br> (A)<br>DR<br>Reverse Drain Current  I Capacitance C  (pF)<br>**----- End of picture text -----**<br>


R07DS1361EJ0200  Rev.2.00 Sep 06, 2016 

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**Target Specifications** 

**HAF1010RJ** 

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Gate to Source Voltage vs.   Shutdown Case Temperature vs.<br>Shutdown Time of Load-Short Test Gate to Source Voltage<br>-15 200<br>180<br>-10<br>160<br>VDD = -16 V<br>-24 V 140<br>-5<br>120 ID = –0.5 A<br>0 100<br>0.0001 0.001 0.01 0.1 0 –2 –4 –6 –8 –10<br>Shutdown Time of Lord-Short Test Gate to Source Voltage   VGS  (V)<br>Pw  (S)<br>Normalized Transient Thermal Impedance vs. Pulse Width<br>10<br>D = 1<br>1<br>0.5<br>0.1<br>θ ch  −  f(t) =  γ s (t)  • θ ch  −  f<br>0.01 θch − f = 83.3°C/W, Ta = 25°C<br>When using the glass epoxy board<br>(FR4  40 × 40 × 1.6 mm)<br>0.001 PDM D = [PW] T<br>PW<br>T<br>0.0001<br>10 μ 100 μ 1 m 10 m 100 m 1 10 100 1000 10000<br>Pulse Width PW   (S)<br>0.1<br>0.2<br>0.02<br>0.05<br>0.01<br>1shot pulse<br>   (V)<br>GS<br>Gate to Source Voltage    V<br>Shutdown Case Temperature Tc  (°C)<br>s  (t)<br>γ<br>Normalized Transient Thermal Impedance<br>**----- End of picture text -----**<br>


R07DS1361EJ0200  Rev.2.00 Sep 06, 2016 

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**Target Specifications** 

**HAF1010RJ** 

## **Package Dimensions** 

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a JEITA Package Code RENESAS Code Package Name MASS[Typ.]<br>a P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-A FP-8DA 0.085g<br>* [1] D<br>bp<br>8 5 b1<br>H EH<br>Index mark b_a| [beemH i ie i<br>1 4 Terminal cross section<br>Z — * [3] bp x M NOTE)1.2. DO NOT INCLUDE MOLD FLASH.DIMENSION "DIMENSIONS "*3" DOES NOT*1(Nom)" AND "*2"<br>INCLUDE TRIM OFFSET.<br>L_] e<br>Reference Dimension in Millimeters<br>L1 | Symbol E Min o Nom Max<br>a D 4.90 5.3<br>P= E 3.95 =<br>i A2<br>A1 0.10 0.14 0.25<br>= A 1.75<br>bp 0.34 0.42 0.50<br>fo—- = L L e TTasr bc1 0.19 0.400.22 0.25<br>= c1 0.20 =<br>Detail F pe 0° 8°<br>y HE 5.80 6.10 6.20<br>Pot e 1.27<br>= x 0.25<br>as y 0.1<br>= Z 0.75<br>Tr L 0.40 0.60 1.27<br>P= L1 1.08 =<br>F<br>2*E HE c1 c<br>A A1<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Name**|**Quantity**|**Shipping Container**|
|---|---|---|
|HAF1010RJ|2500pcs/ Reel|Embossed tape(Reel)|



Note: For some grades, production may be terminated. 

Please contact the Renesas sales office to check the state of production before ordering the product. 

R07DS1361EJ0200  Rev.2.00 Sep 06, 2016 

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