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GUO40-16NO1
Bridge Rectifier, Three Phase, 1.6 kV, Through Hole, 5 Pins, 1.28 V
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Bridge Rectifier Diodes
- No. of Phases:Three Phase; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):-; Bridge Rectifier Case Style:Through Hole; Forward Voltage VF Max:1.28V; No. of Pins:5Pi
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 5Pins
- No. of Phases: Three Phase
- Product Range: GU040
- Forward Voltage Max: 1.28V
- Forward Surge Current: 370A
- Average Forward Current: -
- Bridge Rectifier Mounting: Through Hole
- Operating Temperature Max: 150°C
- Bridge Rectifier Case Style: Through Hole
- Repetitive Peak Reverse Voltage: 1.6kV
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 13.91 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
## **GUO40-16NO1** ## **Standard Rectifier** |||**3~**|| |---|---|---|---| ||**Rectifier**||| |RRM<br>V||1600<br>=|V| |I|DAV|40<br>=|A| |I|FSM|370<br>=|A| ## 3~ Rectifier Bridge ## **Part number** ## **GUO40-16NO1** ## Backside: isolated **==> picture [70 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> +<br>D1 D3 D5<br>~<br>~<br>~<br>D2 D4 D6<br>-<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Low forward voltage drop - Planar passivated chips - Easy to mount with one screw - Space and weight savings ## **Applications:** - Supplies for DC power equipment - Input rectifiers for PWM inverter - Battery DC power supplies - Field supply for DC motors ## GUFP ## **Package:** - Isolation Voltage: V~2500 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Soldering pins for PCB mounting - Base plate: Plastic overmolded tab - Reduced weight ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d © 2019 IXYS all rights reserved **GUO40-16NO1** |**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**| |---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**| |**VRSM**<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1700|V| |**VRRM**<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1600|V| |**IR**<br>_reverse current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>1600<br>150<br>1600|||40<br>1.5|mA<br>µA| |**VF**<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>10<br>I = A<br>F<br>30|||1.06<br>1.28|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>10<br>I = A<br>F<br>30<br>150|||0.92<br>1.23|V<br>V| |**I**<br>**DAV**<br>_bridge output current_|T = °C<br>C<br>90<br>T = °C<br>VJ<br>175<br>d =<br>rectangular<br>⅓|||40|A| |**VF0**<br>T = °C<br>VJ<br>175<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.74<br>16.3|V<br>mΩ| |**R**<br>_thermal resistance junction to case_<br>**thJC**||||4.3|K/W| |**R**<br>_thermal resistance case to heatsink_<br>**thCH**|||0.5||K/W| |**Ptot**<br>_total power dissipation_|T = 25°C<br>C|||35|W| |**IFSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>T = 45°C<br>VJ<br>V = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||370<br>400|A<br>A| ||T = °C<br>VJ<br>150<br>V = 0 V<br>R<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||315<br>340|A<br>A| |**I²t**<br>_value for fusing_|T = 45°C<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||685<br>665|A²s<br>A²s| ||T = °C<br>150<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||495<br>480|A²s<br>A²s| |**CJ**<br>_junction capacitance_|V = V;<br>400<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ||10||pF| **==> picture [307 x 253] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d © 2019 IXYS all rights reserved **GUO40-16NO1** |**Symbol**<br>**Definition**<br>**Conditions**|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |---|---|---|---|---|---| |**I RMS**<br>_RMS current_<br>per terminal||||70|A| |**TVJ**<br>_virtual junction temperature_<br>~~fo~~||-40<br>~~fo~~|~~fo~~|175<br>~~fo~~|°C| |**Top**<br>_operation temperature_<br>~~fo~~||-40<br>~~fo~~|~~fo~~|150<br>~~fo~~|°C| |**Tstg**<br>_storage temperature_||-40||150|°C| |**Weight**|||8.5||g| |**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_||0.8<br>20||1.2<br>120|Nm<br>N| |**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_|6.7<br>10.0|5.4<br>8.0|||mm<br>mm| |**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**||2500<br>2100|||V<br>V| |**R**thJA<br>_thermal resistance junction to ambient_|||50||K/W| |rivty<br>RL]<br>RL]|rivty<br>[RL|rivty<br>Number||||||||| |---|---|---|---|---|---|---|---|---|---|---| |**Ordering**||**Ordering Number**||**Marking on Product**|||**Delivery Mode**||**Quantity**|**Code No.**| |Standard||GUO40-16NO1||GUO40-16NO1|||Tube||14|514899| |||||||||||| |||**Similar Part**||**Package**||**Voltage class**||||| |||DNA40U2200GU|GUFP||||2200|||| |||DMA40U1800GU|GUFP||||1800|||| |||GUO40-12NO1|GUFP||||1200|||| |||GUO40-08NO1|GUFP||||800|||| |**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|_* on die level_|T =<br>VJ|°C<br>175| |---|---|---|---|---|---|---|---|---|---|---|---|---| |I||V0||~~R~~0|||||**Rectifier**|||| |||||||||||||| |||||||||||||| |**V0 max**|||_threshold voltage_|||||_threshold voltage_|0.74|||V| |**R0 max**|||_slope resistance *_||||||13.7|||mΩ| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d © 2019 IXYS all rights reserved **GUO40-16NO1** ## **Outlines GUFP** |**Outlines**<br>**GUFP**|||||||| |---|---|---|---|---|---|---|---| |**_**<br>~<br>~<br>~<br>+<br>S2<br>Y2<br>Y1<br>X1<br>X2<br>A2<br>C<br>A3<br>A4<br>A5<br>A6<br>A<br>E<br>F<br>4x e<br>e<br>Z2<br>Z1<br>5x b<br>5x b2<br>L1<br>+1<br>+2<br>S1<br>Q<br>D<br>L<br>R<br>Ø P<br>O|Dim.|Millimeter|||Inches||| |||min<br>|typ.|max|min|typ.|max| ||A|5.40|5.50|5.60|0.213|0.217|0.221| ||A2|3.90|4.00|4.10|0.154|0.158|0.162| ||A3|0.95|1.00|1.10|0.037|0.039|0.043| ||A4|0.95|1.00|1.05|0.037|0.039|0.041| ||A5|1.60|1.70|1.80|0.063|0.067|0.071| ||A6|1.25|1.30|1.35|0.049|0.051|0.053| ||b|0.95|1.00|1.05|0.037|0.039|0.041| ||b2|1.95|2.00|2.05|0.077|0.079|0.081| ||C|0.45|0.50|0.55|0.018|0.020|0.022| ||D|24.80|25.00|25.20|0.977|0.985|0.993| ||E|34.70|35.00|35.30|1.367|1.379|1.391| ||e|BSC 7.50|||BSC 0.296||| ||F|2.40|2.50|2.60|0.095|0.099|0.102| ||L|20.30|20.40|20.50|0.800|0.804|0.808| ||L1|3.70|3.75|3.80|0.146|0.148|0.150| ||O|17.40|17.50|17.60|0.686|0.690|0.693| ||Ø P|4.10|4.20|4.30|0.162|0.165|0.169| ||Q|9.20|9.30|9.40|0.362|0.366|0.370| ||Ø/~~2~~R||1.77|||0.070|| ||s1|3.45|3.50|3.55|0.136|0.138|0.140| ||s2|1.45|1.50|1.55|0.057|0.059|0.061| ||t1|0.95|1.00|1.05|0.037|0.039|0.041| ||t2|0.95|1.00|1.05|0.037|0.039|0.041| ||x1|3.20|3.30|3.40|0.126|0.130|0.134| ||x2|1.90|2.00|2.10|0.075|0.079|0.083| ||y1|1.60|1.65|1.70|0.063|0.065|0.067| ||y2|4.65|4.70|4.75|0.183|0.185|0.187| ||z1|2.80|2.90|3.00|0.110|0.114|0.118| ||||||||| **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> +<br>D1 D3 D5<br>~<br>~<br>~<br>D2 D4 D6<br>-<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d © 2019 IXYS all rights reserved **GUO40-16NO1** ## **Rectifier** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 60 300 800<br>50 Hz0.8 x V RRM VR = 0 V<br>600<br>40 250 TVJ = 45°C<br>IF IFSM I [2] t TVJ = 45°C<br>400<br>[A] [A]<br>[A [2] s]<br>20 TVJ = 200 TVJ = 150°C 200 TVJ = 150°C<br>125°C<br>150°C TVJ = 25°C<br>0 150 0<br>0.4 0.8 1.2 1.6 10 [-3] 10 [-2] 10 [-1] 10 [0] 1 10<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current vs. Fig. 2 Surge overload current Fig. 3 I [2] t vs. time per diode<br>voltage drop per diode vs. time per diode<br>20 40<br>DC = RthJA:<br>1 0.6 KW DC =<br>16 0.5 0.8 KW 1<br>0.4<br>1 KW 30 0.5<br>0.33<br>0.17 2 KW 0.4<br>Ptot 12 0.08 4 8 KW KW IF(AV)M 20 0.33 0.17<br>[W] 8 [A] 0.08<br>10<br>4<br>0 0<br>0 4 8 12 16 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>IF(AV)M [A] TA [°C] TC [°C]<br>Fig. 4 Power dissipation vs. forward current Fig. 5 Max. forward current vs.<br>and ambient temperature per diode case temperature per diode<br>5<br>4<br>ZthJC 3 Constants for ZthJC calculation:<br>[K/W] 2 i Rth (K/W) ti (s)<br>1 0.302 0.002<br>1 2 1.252 0.032<br>3 1.582 0.227<br>4 1.164 0.820<br>0<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 6 Transient thermal impedance junction to case vs. time per diode<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d © 2019 IXYS all rights reserved
Updated at June 4, 2026
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