GP1S52VJ000F

**GP1S52VJ000F** 

## **GP1S52VJ000F** 

## ■ **Description** 

**GP1S52VJ000F** is a standard, phototransistor output, transmissive photointerrupter with opposing emitter and detector in a case, providing non-contact sensing.  For this family of devices, the emitter and detector are inserted in a case, resulting in a through-hole design. 

## **Gap : 3mm Slit : 0.5mm Phototransistor Output, Case package Transmissive Photointerrupter** 

## ■ **Agency approvals/Compliance** 

1. Compliant with RoHS directive 

## ■ **Applications** 

1. General purpose detection of object presence or motion. 

2. Example : Printer, FAX, Optical storage unit 

## ■ **Features** 

1. Transmissive with phototransistor output 

2. Highlights : 

- Verical Slit for alternate motion detection 

3. Key Parameters : 

- Gap Width : 3mm 

- Slit Width (detector side): 0.5mm 

- Package : 12.2×10×5mm 

4. RoHS directive compliant 

Notice The content of data sheet is subject to change without prior notice. In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP ~~pT~~ devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device. 

Sheet No.: D3-A02 5 01 F EN Date Oct. 3. 2005 © SHARP Corporation 

1 

**GP1S52VJ000F** 

## ■ **Internal Connection Diagram** 

**==> picture [159 x 81] intentionally omitted <==**

**----- Start of picture text -----**<br>
Top view<br>3 2<br>1 Anode<br>2 Cathode<br>3 Collector<br>4 Emitter<br>4 1<br>**----- End of picture text -----**<br>


## ■ **Outline Dimensions** 

(Unit : mm) 

**==> picture [312 x 382] intentionally omitted <==**

**----- Start of picture text -----**<br>
Top view<br>12.2− [+][0.3] 0.3<br>3− [+][0.2] 0.1<br>Model No.<br>Sharp mark “S”<br>A-Aʼ B-Bʼ<br>section section 5<br>A B<br>0.5 0.5 C1<br>Date code<br>mark (Both side)<br>Aʼ Bʼ<br>4−0.4− [+][0.3] 0.1 4−0.45− [+][0.3] 0.1<br>(9.2)<br>(2.54)<br>4 1<br>3 2<br>• Unspecifi ed tolerance shall be as follows ;<br>Dimension (d) Tolerance<br>d≤6 ±0.1<br>6<d≤18 ±0.2<br>• ( ) : Reference dimensions<br>Product mass : approx. 0.49g<br>5<br>(2.5) 1.5<br>10 7.5<br>(Detctor center)<br>3.5<br>2.5 MIN.<br>10<br>S52<br>**----- End of picture text -----**<br>


Dip soldering material : Sn−3Ag−0.5Cu 

Sheet No.: D3-A02501 F EN 

2 

**GP1S52VJ000F** 

## Date code (2 digit) 

|1st digit|1st digit|2nd digit|2nd digit|
|---|---|---|---|
|Year of  production||Month of production||
|A.D.|Mark|Month|Mark|
|2000|0|1|1|
|2001|1|2|2|
|2002|2|3|3|
|2003|3|4|4|
|2004|4|5|5|
|2005|5|6|6|
|2006|6|7|7|
|2007|7|8|8|
|2008|8|9|9|
|2009|9|10|X|
|2010|0|11|Y|
|:|:|12|Z|



repeats in a 10 year cycle 

## Country of origin 

Japan, Indonesia or Philippines (Indicated on the packing case) 

Sheet No.: D3-A02501 F EN 

3 

**GP1S52VJ000F** 

|■**Absolute Maximum Ratings**<br>(Ta=25˚C)|■**Absolute Maximum Ratings**<br>(Ta=25˚C)|■**Absolute Maximum Ratings**<br>(Ta=25˚C)|■**Absolute Maximum Ratings**<br>(Ta=25˚C)|■**Absolute Maximum Ratings**<br>(Ta=25˚C)|
|---|---|---|---|---|
||Parameter|Symbol|Rating|Unit|
|Input|∗1Forward current|IF|50|mA|
||∗1, 2Peak forward current|IFM|1|A|
||Reverse voltage|VR|6|V|
||Power dissipation|P|75|mW|
|Output|Collector-emitter voltage|VCEO|35|V|
||Emitter-collector voltage|VECO|6|V|
||Collector current|IC|20|mA|
||∗1Collector power dissipation|PC|75|mW|
|Operating temperature||Topr|−25 to+85|˚C|
|Storage temperature||Tstg|−40 to+100|˚C|
|∗3Soldering temperature||Tsol|260|˚C|



∗1 Refer to Fig. 1, 2, 3 

∗2 Pulse width ≤ 100μs, Duty ratio=0.01 

∗3 For 5s or less 

## ■ **Electro-optical Characteristics** 

(Ta=25˚C) 

||Parameter|Parameter|Symbol|Condition|MIN.|TYP.|MAX.|Unit|
|---|---|---|---|---|---|---|---|---|
|Input|Forward voltage||VF|IF=20mA|−|1.25|1.4|V|
||Peak forward voltage||VFM|IFM=0.5A||3|4|V|
||Reverse current||IR|VR=3V|−|−|10|μA|
|Output|Collector dark current||ICEO|VCE=20V|−|1|100|nA|
|Transfer<br>charac-<br>teristics|Collector current||IC|VCE=5V, IF=20mA|0.5|−|5|mA|
||Collector-emitter saturation voltage||VCE(sat)|IF=40mA, IC=0.5mA|−|−|0.4|V|
||Response time|Rise time|tr|VCE=2V, IC=2mA, RL=100Ω|−|3|15|μs|
|||Fall time|tf||−|4|20||



Sheet No.: D3-A02501 F EN 

4 

**GP1S52VJ000F** 

## **Fig.1 Forward Current vs. Ambient Temperature** 

**==> picture [197 x 658] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>50<br>40<br>30<br>20<br>10<br>0<br>−25 0 25 50 75 85 100<br>Ambient temperature Ta (˚C)<br>Fig.3 Peak Forward Current vs.<br>Duty Ratio<br>Pulse width≤100μs<br>Ta=25˚C<br>1 000<br>100<br>10<br>10 [−][2] 10 [−][1] 1<br>Duty ratio<br>Fig.5 Collector Current vs.<br>Forward Current<br>12<br>VCE=5V<br>Ta=25˚C<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50<br>Forward current IF (mA)<br> (mA)<br>F<br>Forward current I<br> (mA)<br>FM<br>Peak forward current I<br> (mA)<br>C<br>Collector current I<br>**----- End of picture text -----**<br>


## **Fig.3 Peak Forward Current vs. Duty Ratio** 

## **Fig.5 Collector Current vs.** 

## **Fig.2 Collector Power Dissipation vs. Ambient Temperature** 

**==> picture [196 x 423] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>100<br>80<br>75<br>60<br>40<br>20<br>15<br>0<br>−25 0 25 50 75 85 100<br>Ambient temperature Ta (˚C)<br>Fig.4 Forward Current vs.<br>Forward Voltage<br>Ta=75˚C 25˚C<br>0˚C<br>50˚C −25˚C<br>100<br>10<br>1<br>0 0.5 1 1.5 2 2.5 3 3.5<br>Foward voltage VF (V)<br> (mW)<br>C<br>Collector power dissipation P<br> (mA)<br>F<br>Forward current I<br>**----- End of picture text -----**<br>


## **Fig.4 Forward Current vs. Forward Voltage** 

## **Fig.6 Collector Current vs. Collector-emitter Voltage** 

**==> picture [194 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
7<br>Ta=25˚C<br>6<br>IF=50mA<br>5<br>40mA<br>4<br>30mA<br>3<br>20mA<br>2<br>10mA<br>1<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>Collector-emitter VCE (V)<br> (mA)<br>C<br>Collector current I<br>**----- End of picture text -----**<br>


Sheet No.: D3-A02501 F EN 

5 

**GP1S52VJ000F** 

## **Fig.7 Collector Current vs.** 

## **Ambient Temperature** 

**==> picture [195 x 662] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>IF=20mA<br>VCE=5V<br>3<br>2<br>1<br>0<br>−25 0 25 50 75 100<br>Ambient temperature Ta (˚C)<br>Fig.9 Response Time vs. Load Resistance<br>100<br>VCE= 2V<br>IC= 2mA<br>Ta=25˚C<br>10<br>tf<br>tr<br>td<br>1<br>ts<br>0.1<br>0.01 0.1 1 10<br>Load resistance RL (kΩ)<br>Fig.11 Frequency Response<br>5<br>VCE=2V<br>IC=2mA<br>0 Ta=25˚C<br>−5<br>RL= 1kΩ 100Ω<br> 10kΩ<br>−10<br>−15<br>−20<br>10 [2] 10 [3] 10 [4] 10 [5] 10 [6]<br>Frequency f (Hz)<br> (mA)<br>C<br>Collector current I<br>s)<br>μ<br>Response time (<br> (dB)<br>V<br>Voltage gain A<br>**----- End of picture text -----**<br>


## **Fig.9 Response Time vs. Load Resistance** 

## **Fig.11 Frequency Response** 

## **Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature** 

**==> picture [196 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.25<br>IF=40mA<br>IC=0.5mA<br>0.2<br>0.15<br>0.1<br>0.05<br>0<br>−25 0 25 50 75 100<br>Ambient temperature Ta (˚C)<br> (V)<br>CE (sat)<br>Collector-emitter saturation voltage V<br>**----- End of picture text -----**<br>


## **Fig.10 Test Circuit for Response Time** 

**==> picture [245 x 427] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCC Input<br>RD RL<br>Input Output Output 10%<br>90%<br>td ts<br>tr tf<br>Fig.12 Collector Dark Current vs.<br>Ambient Temperature<br>10 [−][6]<br>VCE=20V<br>10 [−][7]<br>10 [−][8]<br>10 [−][9]<br>10 [−][10]<br>−25 0 25 50 75 100<br>Ambient temperature Ta (˚C)<br> (A)<br>CEO<br>Collector dark current I<br>**----- End of picture text -----**<br>


## **Fig.12 Collector Dark Current vs. Ambient Temperature** 

Sheet No.: D3-A02501 F EN 

6 

**GP1S52VJ000F** 

## **Fig.13 Detecting Position Characteristics (1)** 

## **Fig.14 Detecting Position Characteristics (2)** 

**==> picture [463 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF=20mA, VCE=5V IF=20mA, VCE=5V<br>100 Ta=25˚C L 100 Ta=25˚C Shield<br>−<br>Sensor<br>0<br>Shield +<br>− + Sensor<br>0<br>50 50<br>0 0<br>−1.5 −1 −0.5 0 0.5 1 1.5 2 2.5 −3 −2 −1 0 1 2 3 4 5<br>Shield moving distance L (mm)  Shield moving distance L (mm)<br>L<br>Relative collector current (%) Relative collector current (%)<br>**----- End of picture text -----**<br>


Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. 

Sheet No.: D3-A02501 F EN 

7 

**GP1S52VJ000F** 

## ■ **Design Considerations** 

## ● **Design guide** 

- 1) Prevention of detection error 

To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 

- 2) Position of opaque board 

Opaque board shall be installed at place 4mm or more from the top of elements. 

(Example) 

**==> picture [46 x 68] intentionally omitted <==**

**==> picture [47 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
4mm or more<br>**----- End of picture text -----**<br>


This product is not designed against irradiation and incorporates non-coherent IRED. 

## ● **Degradation** 

In general, the emission of the IRED used in photocouplers will degrade over time. 

In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. 

## ● **Parts** 

This product is assembled using the below parts. 

## • Photodetector (qty. : 1) 

|• Photodetector|(qty. : 1)||||
|---|---|---|---|---|
|Category|Material|Maximum Sensitivity<br>wavelength (nm)|Sensitivity<br>wavelength (nm)|Response time (μs)|
|Phototransistor|Silicon (Si)|800|400 to 1 200|3|



## • Photo emitter (qty. : 1) 

|• Photo emitter (qty. : 1)||||
|---|---|---|---|
|Category|Material|Maximum light emitting<br>wavelength (nm)|I/O Frequency (MHz)|
|Infrared emitting diode<br>(non-coherent)|Gallium arsenide (GaAs)|950|0.3|



## • Material 

|• Material||
|---|---|
|Case|Lead frame plating|
|Black NORYL resin|Solder dip. (Sn−3Ag−0.5Cu)|



Sheet No.: D3-A02501 F EN 

8 

**GP1S52VJ000F** 

## ■ **Manufacturing Guidelines** 

## ● **Soldering Method** 

## Flow Soldering: 

Soldering should be completed below 260˚C and within 5 s. 

Please take care not to let any external force exert on lead pins. 

Please don't do soldering with preheating, and please don't do soldering by refl ow. 

## Hand soldering 

Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C. Please solder within one time. 

Please don't touch the terminals directly by soldering iron. 

Soldered product shall treat at normal temperature. 

## Other notice 

Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. 

## Flux 

Some fl ux, which is used in soldering, may crack the package due to synergistic effect of alcohol in fl ux and the rise in temperature by heat in soldering.  Therefore, in using fl ux, please make sure that it does not have any infl uence on appearance and reliability of the photointerrupter. 

Sheet No.: D3-A02501 F EN 

9 

**GP1S52VJ000F** 

## ● **Cleaning instructions** 

## Solvent cleaning : 

Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. 

## Ultrasonic cleaning : 

The affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output, cleaning time, PCB size or device mounting condition etc. 

Please test it in actual using condition and confi rm that doesn't occur any defect before starting the ultrasonic cleaning. 

## Recommended solvent materials : 

Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. 

## ● **Presence of ODC** 

This product shall not contain the following materials. 

And they are not used in the production process for this product. 

Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) 

Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all. 

This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). 

- •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). 

Sheet No.: D3-A02501 F EN 

10 

**GP1S52VJ000F** 

## ■ **Package specifi cation** 

## ● **Case package** 

## Package materials 

Anti-static plastic bag : Polyethtylene 

Moltopren : Urethane 

Partition : Corrugated fi berboard 

Packing case : Corrugated fi berboard 

## Package method 

100 pcs of products shall be packaged in a plastic bag, Ends shall be fi xed by stoppers. The bottom ot the packing case is covered with moltopren, and the partition is set in the packing case. Each partition should have 1 plastic bag. 

The 10 plastic bags containing a product are put in the packing case. 

Moltopren should be located after all product are settled (1 packing contains 1 000 pcs). 

## Packing composition 

**==> picture [393 x 335] intentionally omitted <==**

**----- Start of picture text -----**<br>
Moltopren<br>Partition<br>Anti-static<br>plastic bag<br>Packing case<br>**----- End of picture text -----**<br>


Sheet No.: D3-A02501 F EN 

11 

**GP1S52VJ000F** 

## ■ **Important Notices** 

· The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. 

· Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifi cations, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. 

· Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specifi ed in the relevant specifi cation sheet nor meet the following conditions: 

(i) The devices in this publication are designed for use in general electronic equipment designs such as: 

- --- Personal computers 

- --- Offi ce automation equipment 

- --- Telecommunication equipment [terminal] 

- --- Test and measurement equipment 

- --- Industrial control 

with equipment that requires higher reliability such as: 

- --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) 

- --- Traffi c signals 

- --- Gas leakage sensor breakers 

- --- Alarm equipment 

- --- Various safety devices, etc. 

(iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: 

- --- Space applications 

- --- Telecommunication equipment [trunk lines] 

- --- Nuclear power control equipment 

- --- Medical and other life support equipment (e.g., scuba). 

· If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. 

· This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. 

- --- Audio visual equipment 

- --- Consumer electronics 

(ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection 

· Contact and consult with a SHARP representative if there are any questions about the contents of this publication. 

Sheet No.: D3-A02501 F EN 

[H150] 

12