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GP1S094HCZ0F
Transmissive Photo Interrupter, Phototransistor, Through Hole, 3 mm, 0.3 mm, 50 mA, 6 V
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- Manufacturer: SHARP
- Product type: Transmissive Photo Interrupters
- Gap Width: 3mm
- Product Range: GP1S094HCZ0F
- Sensor Output: Phototransistor
- Aperture Width: 0.3mm
- Forward Voltage: 1.2V
- Sensor Mounting: Through Hole
- Forward Current If: 50mA
- Reverse Voltage Vr: 6V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 0.35 € |
| Current stock | 1000+ |
| Lead time | 7 days |
**GP1S094HCZ0F** ## **GP1S094HCZ0F** ## ■ **Description** **GP1S094HCZ0F** is a compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides non-contact sensing. The compact package series is a result of unique technology combing transfer and injection molding. **Gap : 3mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter** ## ■ **Agency approvals/Compliance** 1. Compliant with RoHS directive ## ■ **Applications** 1. Detection of object presence or motion. 2. Example: printer, lens control for camera This device has a wide gap and positioning pins. ## ■ **Features** 1. Transmissive with phototransistor output 2. Highlights: - Compact Size - Positioning Pin to prevent misalignment 3. Key Parameters: - Gap Width : 3mm - Slit Width (detector side): 0.3mm - Package : 5.5×2.6×4.8mm 4. RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device. Sheet No.: D3-A00601 F EN Date Oct. 3. 2005 © SHARP Corporation 1 **GP1S094HCZ0F** ## ■ **Internal Connection Diagram** **==> picture [139 x 67] intentionally omitted <==** **----- Start of picture text -----**<br> Top view<br>2 1<br>1 Anode<br>2 Collector<br>3 Emitter<br>4 Cathode<br>3 4<br>**----- End of picture text -----**<br> ## ■ **Outline Dimensions** (Unit : mm) **==> picture [257 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> Top view<br>(C0.3)<br>5.5 a-a' section<br>3 (C0.4) 2.6 (0.3)Slit width<br>Center of<br> light axis<br>∗∗ ∗∗ (C0.3)<br>C0.2 0.4<br>0.5<br>0.15− [+][0.2] 0.1<br>∗4.55 ∗2<br>(0.05)<br>φ1− [+] 0.1 [0 ] ∗∗∗<br>3 4 • Unspecifi ed tolerance : ±0.2mm<br>• Dimensions in parenthesis are shown for<br>reference.<br>2 1 • The dimensions indicated by ∗ refer to those<br>measured from the lead base.<br>• The dimensions shown do not include burr.<br>Burr's dimension shall be : 0.15mm MAX.<br>• ∗∗ The lead may be exposed at the shaded<br>portion.<br>• ∗∗∗ This portion has no SnCu plating.<br>a'<br>a<br>(0.75)<br>3<br>4.8<br>0.3+ 0.2− 0.2±<br>0.8 3.1 3<br>0.05±0.75<br>**----- End of picture text -----**<br> Product mass : approx. 0.085g Plating material : SnCu (Cu : TYP. 2%) ## Country of origin Japan Sheet No.: D3-A00601 F EN 2 **GP1S094HCZ0F** ## ■ **Absolute Maximum Ratings** |■**Absolute Maximum Rating**|**s**||(Ta=25˚C )|(Ta=25˚C )|||||| |---|---|---|---|---|---|---|---|---|---| |Parameter|Symbol|Rating||Unit|||||| |Forward current|IF|50||mA|||||| |Input<br>Reverse voltage|VR|6||V|||||| |Power dissipation|P|75||mW|||||| |Collector-emitter voltage|VCEO|35||V|||||| |Output<br>Emitter-collector voltage<br>Collector current|VECO<br>IC|6<br>20||V<br>mA|||||| |Collector power dissipation|PC|75||mW|||||| |Total power dissipation|Ptot|100||mW|||||| |Operating temperature|Topr|−25 to+85||˚C|||||1mm or more| |Storage temperature<br>∗1Soldering temperature|Tstg<br>Tsol|−40 to+100<br>260||˚C<br>˚C||||Soldering area|| ∗1 For 5s or less ## ■ **Electro-optical Characteristics** (Ta=25˚C ) ||Parameter|Parameter|Symbol|Condition|MIN.|TYP.|MAX.|Unit| |---|---|---|---|---|---|---|---|---| |Input|Forward voltage||VF|IF=20mA|−|1.2|1.4|V| ||Reverse current||IR|VR=3V|−|−|10|μA| |Output|Collector dark current||ICEO|VCE=20V|−|−|100|nA| |Transfer<br>charac-<br>teristics|Collector current||IC|VCE=5V, IF=5mA|40|−|400|μA| ||Collector-emitter saturation voltage||VCE(sat)|IF=10mA, IC=40μA|−|−|0.4|V| ||Response time|Rise time|tr|VCE=5V, IC=100μA, RL=1kΩ|−|50|150|μs| |||Fall time|tf||−|50|150|μs| Sheet No.: D3-A00601 F EN 3 **GP1S094HCZ0F** ## **Fig.1 Forward Current vs.** **==> picture [193 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> Ambient Temperature<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>�25 0 25 50 75 85 100<br>Ambient temperature Ta (˚C)<br>Forward current I (mA)F<br>**----- End of picture text -----**<br> ## **Fig.3 Forward Current vs. Forward Voltage** **==> picture [191 x 425] intentionally omitted <==** **----- Start of picture text -----**<br> Ta�75˚C 25˚C<br>0˚C<br>50˚C �25˚C<br>100<br>10<br>1<br>0 0.5 1 1.5 2 2.5 3<br>Forward voltage VF (V)<br>Fig.5 Collector Current vs.<br>Collector-emitter Voltage<br>1<br>IF=50mA<br>0.8 40mA<br>30mA<br>0.6<br>20mA<br>0.4<br>10mA<br>0.2<br>5mA<br>0<br>0 2 4 6 8 10<br>Collector-emitter voltage VCE (V)<br>Forward current I (mA)F<br> (mA)<br>C<br>Collector current I<br>**----- End of picture text -----**<br> ## **Fig.5 Collector Current vs. Collector-emitter Voltage** ## **Fig.2 Power Dissipation vs.** ## **Ambient Temperature** **==> picture [197 x 662] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100 Ptot<br>80 P, Pc<br>75<br>60<br>40<br>20<br>15<br>0<br>−25 0 25 50 75 85 100<br>Ambient temperature Ta (˚C)<br>Fig.4 Collector Current vs.<br>Forward Current<br>VCE=5V<br>1 Ta =25˚C<br>0.8<br>0.6<br>0.4<br>0.2<br>0 0 10 20<br>Forward current IF (mA)<br>Fig.6 Relative Collector Current vs.<br>Ambient Temperature<br>120<br>110 IF�5mA<br>VCE�5V<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>�25 0 25 50 75 85<br>Ambient temperature Ta (˚C)<br> (mW)<br>tot<br>Power dissipation P, P, Pc<br>Collector current I (mA)c<br>Relative collector current (%)<br>**----- End of picture text -----**<br> ## **Fig.4 Collector Current vs. Forward Current** ## **Fig.6 Relative Collector Current vs. Ambient Temperature** Sheet No.: D3-A00601 F EN 4 **GP1S094HCZ0F** **==> picture [259 x 681] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.7 Collector-emitter Saturation Voltage vs.<br>Ambient Temperature<br>0.2<br>IF=10mA<br>0.18 IC=40μA<br>0.16<br>0.14<br>0.12<br>0.1<br>0.08<br>0.06<br>−25 0 25 50 75 85<br>Ambient temperature Ta (˚C)<br>Fig.9 Response Time vs. Load ResistanceResponse Time vs. Load Resistance<br>1 000<br>VCE�5V<br>IC�100�A<br>100 tf<br>tr<br>td<br>10<br>ts<br>1<br>0.1 1 10 100<br>Load resistance RL (k�)<br>Fig.11 Detecting Position Characteristics (1)<br>100<br>IF=5mA<br>90 VCE=5V<br>L=0 L<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 0.5 1 1.5 2 2.5<br>Shield moving distance L (mm)<br> (V)<br>CE(sat)<br>Collector-emitter saturation voltage V<br>s)<br>�<br>Response time (<br>Relative collector current (%)<br>**----- End of picture text -----**<br> ## **Fig.9 Response Time vs. Load ResistanceResponse Time vs. Load Resistance** ## **Fig.8 Collector Dark Current vs.** **==> picture [125 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Ambient Temperature<br>**----- End of picture text -----**<br> **==> picture [197 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [�][6]<br>VCE�20V<br>10 [�][7]<br>10 [�][8]<br>10 [�][9]<br>10 [�][10]<br>0 25 50 75 100<br>Ambient temperature Ta (˚C)<br> (A)<br>CEO<br> Collector Dark current I<br>**----- End of picture text -----**<br> ## **Fig.10 Test Circuit for Response Time** **==> picture [234 x 101] intentionally omitted <==** **----- Start of picture text -----**<br> VCC Input<br>RD RL<br>Input Output Output 10%<br>90%<br>td ts<br>tr tf<br>**----- End of picture text -----**<br> ## **Fig.12 Detecting Position Characteristics (2)** **==> picture [188 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>IF=5mA<br>90 VCE=5V<br>80<br>L=0<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 0.5 1 1.5 2<br>Shield moving distance L (mm)<br>L<br>Relative collector current (%)<br>**----- End of picture text -----**<br> Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A00601 F EN 5 **GP1S094HCZ0F** ## ■ **Design Considerations** ## ● **Design guide** - 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. - 2) Position of opaque board Opaque board shall be installed at place 1.6mm or more from the top of elements. (Example) **==> picture [82 x 76] intentionally omitted <==** **==> picture [243 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6mm or more 1.6mm or more<br>**----- End of picture text -----**<br> This product is not designed against irradiation and incorporates non-coherent IRED. ## ● **Degradation** In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ## ● **Parts** This product is assembled using the below parts. ## • Photodetector (qty. : 1) |• Photodetector|(qty. : 1)|||| |---|---|---|---|---| |Category|Material|Maximum Sensitivity<br>wavelength (nm)|Sensitivity<br>wavelength (nm)|Response time (μs)| |Phototransistor|Silicon (Si)|930|700 to 1 200|20| ## • Photo emitter (qty. : 1) |Category|Material|Maximum light emitting<br>wavelength (nm)|I/O Frequency (MHz)| |---|---|---|---| |Infrared emitting diode<br>(non-coherent)|Gallium arsenide (GaAs)|950|0.3| ## • Material |• Material||| |---|---|---| |Case|Lead frame|Lead frame plating| |Black polyphernylene<br>sulf de resin (UL94 V-0)|42Alloy|SnCu plating| Sheet No.: D3-A00601 F EN 6 **GP1S094HCZ0F** ## ■ **Manufacturing Guidelines** ## ● **Soldering Method** ## Flow Soldering: Soldering should be completed below 260˚C and within 5 s. Please solder within one time. Soldering area is 1mm or more away from the bottom of housing. Please take care not to let any extcrhal force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by refl ow. ## Hand soldering Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature. ## Other notice Please take care not to let any external force exert on lead pins. Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. ## ● **Cleaning instructions** ## Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. ## Ultrasonic cleaning : Do not execute ultrasonic cleaning. ## Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. ## ● **Presence of ODC** This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). - •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D3-A00601 F EN 7 **GP1S094HCZ0F** ## ■ **Package specifi cation** ## ● **Sleeve package** ## Package materials Sleeve : Polyphernylene Stopper : Styrene-Elastomer ## Package method MAX. 100 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 50 sleeves in one case. Sheet No.: D3-A00601 F EN 8 **GP1S094HCZ0F** ## ■ **Important Notices** · The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. · Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifi cations, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. · Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specifi ed in the relevant specifi cation sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: - --- Personal computers - --- Offi ce automation equipment - --- Telecommunication equipment [terminal] - --- Test and measurement equipment - --- Industrial control with equipment that requires higher reliability such as: - --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) - --- Traffi c signals - --- Gas leakage sensor breakers - --- Alarm equipment - --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: - --- Space applications - --- Telecommunication equipment [trunk lines] - --- Nuclear power control equipment - --- Medical and other life support equipment (e.g., scuba). · If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. · This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. - --- Audio visual equipment - --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection · Contact and consult with a SHARP representative if there are any questions about the contents of this publication. Sheet No.: D3-A00601 F EN [H127] 9
Updated at February 9, 2023
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