GP1007

**- GP1001 GP1007** Taiwan Semiconductor 

## **10A, 50V - 1000V Glass Passivated Rectifiers** 

## FEATURES 

- High efficiency, low VF 

- High current capability 

- High surge current capability 

- Low power loss 

- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 

- Halogen-free according to IEC 61249-2-21 

## **TO-220AB** 

## MECHANICAL DATA 

## **Case:** TO-220AB 

Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified 

Packing code with suffix "G" means green compound (halogen-free) 

**Terminal:** Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test 

**Polarity:** As marked **Mounting torque:** 0.56 Nm max. 

**Weight:** 1.82 g (approximately) 

|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)|
|---|---|---|---|---|---|---|---|---|---|
|PARAMETER<br>~~a~~|SYMBOL<br>~~SD~~|GP<br>1001<br>~~SD~~|GP<br>1002<br>~~SD~~|GP<br>1003<br>~~GO~~|GP<br>1004|GP<br>1005<br>~~GO~~|GP<br>1006<br>~~GO~~|GP<br>1007<br>~~GO~~|UNIT|
|Maximum repetitive peak reverse voltage<br>~~a~~<br>~~a~~|VRRM<br>~~SD~~<br>~~SD~~|50<br>~~SD~~<br>~~SD~~|100<br>~~SD~~<br>~~SD~~|200<br>~~GO~~<br>~~GO~~|400|600<br>~~GO~~<br>~~GO~~|800<br>~~GO~~<br>~~GO~~|1000<br>~~GO~~<br>~~GO~~|V|
|Maximum RMS voltage<br>~~a~~<br>~~a~~|VRMS<br>~~SD~~<br>~~SD~~|35<br>~~SD~~<br>~~SD~~|70<br>~~SD~~<br>~~SD~~<br>~~GO~~|140<br>~~GO~~<br>~~GO~~<br>~~GO~~|280<br>~~OG~~|420<br>~~GO~~<br>~~GO~~<br>~~OG~~|560<br>~~GO~~<br>~~GO~~<br>~~OG~~|700<br>~~GO~~<br>~~GO~~<br>~~OO~~|V|
|Maximum DC blocking voltage<br>~~a~~<br>~~GS~~|VDC<br>~~SD~~<br>~~GS~~|50<br>~~SD~~<br>~~GS~~|100<br>~~SD~~<br>~~GS~~<br>~~GO~~|200<br>~~GO~~<br>~~GS~~<br>~~GO~~|400<br>~~GS~~<br>~~OG~~|600<br>~~GO~~<br>~~GS~~<br>~~OG~~|800<br>~~GO~~<br>~~GS~~<br>~~OG~~|1000<br>~~GO~~<br>~~GS~~<br>~~OO~~|V<br>~~GS~~|
|Maximum average forward rectified current|IF(AV)<br>~~es ee~~|10<br>~~GO OG~~<br>~~OO~~<br>~~ee~~|||||||A|
|Peak forward surge current, 8.3 ms single half sine-wave<br>superimposed on rated load<br>~~ee~~|IFSM<br>~~ee~~<br>~~es ee~~|125<br>~~ee~~<br>~~ee~~|||||||A<br>~~ee~~|
|Maximum instantaneous forward voltage    (Note 1)<br>@ 5 A|VF<br>~~es ee~~|1.1<br>~~ee~~|||||||V|
|Maximum reverse current @ rated VR<br>TJ=25°C<br>TJ=125°C|IR|5<br>200|||||||μA|
|Typical junction capacitance (Note 2)<br>~~NO~~|CJ<br>~~NO~~|30<br>~~NO~~|||||||pF<br>~~NO~~|
|Typical thermal resistance<br>~~NO~~|RθJC<br>~~NO~~|3<br>~~NO~~|||||||°C/W<br>~~NO~~|
|Operating junction temperature range<br>~~NO~~|TJ<br>~~NO~~|- 55 to +150<br>~~NO~~|||||||°C<br>~~NO~~|
|Storage temperature range<br>~~a~~|TSTG<br>~~G~~|- 55 to +150<br>~~G~~|||||||°C<br>~~G~~|



Note 1: Pulse test with PW=300μs, 1% duty cycle 

Note 2: Measured at 1 MHz and applied reverse voltage of 4.0 V DC. 

Version: F1511 

**GP1001 - GP1007** Taiwan Semiconductor 

## ORDERING INFORMATION 

||PART NO.|PACKING|PACKING CODE|||
|---|---|---|---|---|---|
|PART NO.|SUFFIX|CODE|SUFFIX(*)|PACKAGE|PACKING|
|GP100x<br>(Note 1)|H|C0|G|TO-220AB|50 / Tube|



Note 1: "x" defines voltage from 50V (GP1001) to 1000V (GP1007) 

*: Optional available 

## EXAMPLE 

|EXAMPLE|EXAMPLE|EXAMPLE|EXAMPLE|EXAMPLE|EXAMPLE|
|---|---|---|---|---|---|
|EXAMPLE<br>PART NO.|PART NO.|PART NO.<br>SUFFIX|PACKING CODE|PACKING CODE<br>SUFFIX|DESCRIPTION|
|GP1001HC0G|GP1001|H|C0|G|AEC-Q101 qualified<br>Green compound|



## RATINGS AND CHARACTERISTICS CURVES 

(TA=25°C unless otherwise noted) 

**==> picture [165 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIG.1 MAXMUM FORWARD CURRENT<br>**----- End of picture text -----**<br>


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FIG. 2 TYPICAL REVERSE CHARACTERISTICS<br>DERATING CURVE PER LEG<br>1210 ee 100<br>10<br>8 TTUTTTN<br>GT =ee<br>\ ——e<br>6 TJ=125 ° C<br>1<br>4 PTTTTTNY) Resistive of eee<br>inductive load<br>TJ=25 ° C<br>2 0.1<br>0 ru 50 EPTLETNS 100 150 0 eSAF 20 ta 40 60 80 100 al 120 140<br>CASE TEMPERATURE( [°] C)<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>FIG. 3 MAXIMUM NON-REPETITIVE FORWARD  FIG. 4 TYPICAL INSTANTANEOUS<br>SURGE CURRENT   FORWARD CHARACTERISTICS<br>175 1000<br>150<br>8.3ms single half sine  wave 100<br>125<br>100 Hd —————<br>NN ill ee<br>10<br>75<br>50<br>1<br>Pulse width=300μs<br>25 ES a Aa 1% duty cycle<br>0 0.1<br>1 _ | ELT 10 TEL 100 0.6 i 0.8 1 1.2 1.4 1.6 1.8 2<br>NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V)<br>AVERAGE FORWARD CURRENT(A)<br>INSTANTANEOUS REVERSE CURRENT (μA)<br>PEAK FORWARD SURGE CURRENT(A)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


Version: F1511 

**GP1001 - GP1007** Taiwan Semiconductor 

FIG. 5 TYPICAL JUNCTION CAPACITANCE 

**==> picture [278 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>f=1.0MHz<br>100 a |<br>Vslg=50mVp-p<br>80 SMT hl<br>60<br>CNA CTE EUMT E UT<br>40 Se<br>20 CEA PSS TUNE ETT<br>CUTAN PLAINS TT Hl<br>0<br>0.1 1 10 100 1000<br>REVERSE VOLTAGE (V)<br>JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


## PACKAGE OUTLINE DIMENSIONS 

**TO-220AB** 

**Unit (mm) Unit (inch) DIM.** A **Min Max Min Max** A - 10.50 - 0.413 if | ~~eee~~ E ln ~~a~~ B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 Tee] + ~~tt~~ E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 ~~a~~ G 13.19 14.79 0.519 0.582 . pL ~~a~~ H 2.41 2.67 0.095 0.105 I 4.42 4.76 0.174 0.187 of |PIN1 2 3 | ~~**a**~~ J 1.14 ~~ee ee~~ 1.40 0.045 ~~ee~~ 0.055 ~~ee~~ K 5.84 6.86 0.230 0.270 L 2.20 2.80 0.087 0.110 M 0.35 0.64 0.014 0.025 ry(| sf, ~~Eeea~~ N 1.14 1.77 0.045 0.070 Lt H _|LM ~~=~~ MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code 

Version: F1511 

**- GP1001 GP1007** Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

Version: F1511