GD600HFY120C2S

IGBT Module, Half Bridge, 1 kA, 2 V, 3.409 kW, 150 °C, Module

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: STARPOWER
Product type: IGBT Modules
Transistor Polarity:Dual N Channel; DC Collector Current:1kA; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:3.409kW; Collector Emitter Voltage V(br)ceo:1.2
SVHC: To Be Advised
Product Range: -
IGBT Technology: Trench Field Stop
IGBT Termination: Stud
Power Dissipation: 3.409kW
IGBT Configuration: Half Bridge
Transistor Mounting: Panel
DC Collector Current: 1kA
Power Dissipation Pd: 3.409kW
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 1kA
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 2V
Collector Emitter Saturation Voltage Vce(on): 2V

Delivery and price
Units per pack	10
Price	135.35 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at April 17, 2026

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