GD50HFX170C1S

IGBT Module, Half Bridge, 100 A, 1.85 V, 418 W, 150 °C, Module

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Manufacturer: STARPOWER
Product type: IGBT Modules
SVHC: To Be Advised
Product Range: -
IGBT Technology: Trench
IGBT Termination: Stud
Power Dissipation: 418W
IGBT Configuration: Half Bridge
Transistor Mounting: Panel
DC Collector Current: 100A
Power Dissipation Pd: 418W
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 100A
Collector Emitter Voltage Max: 1.7kV
Collector Emitter Voltage V(br)ceo: 1.7kV
Collector Emitter Saturation Voltage: 1.85V
Collector Emitter Saturation Voltage Vce(on): 1.85V

Delivery and price
Units per pack	100
Price	28.84 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at April 1, 2026