GD200HFX65C2S

IGBT Module, Half Bridge, 247 A, 1.45 V, 612 W, 150 °C, Module

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Manufacturer: STARPOWER
Product type: IGBT Modules
SVHC: To Be Advised
Product Range: -
IGBT Technology: Trench
IGBT Termination: Stud
Power Dissipation: 612W
IGBT Configuration: Half Bridge
Transistor Mounting: Panel
DC Collector Current: 247A
Power Dissipation Pd: 612W
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 247A
Collector Emitter Voltage Max: 650V
Collector Emitter Voltage V(br)ceo: 650V
Collector Emitter Saturation Voltage: 1.45V
Collector Emitter Saturation Voltage Vce(on): 1.45V

Delivery and price
Units per pack	5
Price	59.56 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at April 1, 2026