Image not available
Illustrative purposes only
GD100HHU120C6S
IGBT Module, H Bridge, 160 A, 3.1 V, 638 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: STARPOWER
- Product type: IGBT Modules
- SVHC: To Be Advised
- Product Range: -
- IGBT Technology: NPT Ultra Fast IGBT
- IGBT Termination: Press Fit
- Power Dissipation: 638W
- IGBT Configuration: H Bridge
- Transistor Mounting: Panel
- DC Collector Current: 160A
- Power Dissipation Pd: 638W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 160A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 3.1V
- Collector Emitter Saturation Voltage Vce(on): 3.1V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 77.84 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
GD100HHU120C6S IGBT Module ## **STARPOWER** SEMICONDUCTOR **IGBT** ## **GD100HHU120C6S** **Molding Type Module** **1200V/100A 4 in one-package** ## **General Description** STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. ## **Features** - NPT IGBT technology - 10μs short circuit capability - Low switching losses - Rugged with ultrafast performance - VCE(sat) with positive temperature coefficient - Low inductance case - Fast & soft reverse recovery anti-parallel FWD - Isolated copper baseplate using DBC technology ## **Typical Applications** - Switching mode power supplies - Inductive heating - Electronic welder ©2012 STARPOWER Semiconductor Ltd. 7/7/2012 1/9 Rev.A GD100HHU120C6S IGBT Module **Absolute Maximum Ratings** TC=25℃ unless otherwise noted |**Symbol**|**Description**|**GD100HHU120C6S**|**Units**| |---|---|---|---| |VCES|Collector-EmitterVoltage|1200|V| |VGES|Gate-Emitter Voltage|±20|V| |IC|Collector Current @ TC=25℃<br>@ TC=80℃|160<br>100|A| |ICM|PulsedCollectorCurrent tp=1ms|200|A| |IF|Diode Continuous Forward Current|100|A| |IFM|Diode Maximum ForwardCurrent tp=1ms|200|A| |PD|Maximum Power Dissipation @ Tj=150℃|638|W| |Tjmax|Maximum Junction Temperature|150|℃| |Tjop|OperatingJunction Temperature|-40 to +125|℃| |TSTG|Storage Temperature Range|-40 to +125|℃| |VISO|IsolationVoltage RMS,f=50Hz,t=1min|2500|V| |Mounting<br>Torque|Mounting Screw:M5|3.0 to 6.0|N.m| ## **Electrical Characteristics of IGBT** TC=25℃ unless otherwise noted ## **Off Characteristics** |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max. **|**Units**| |---|---|---|---|---|---|---| |V(BR)CES|Collector-Emitter<br>Breakdown Voltage|Tj=25℃|1200|||V| |ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25℃|||5.0|mA| |IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25℃|||400|nA| ## **On Characteristics** |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max. **|**Units**| |---|---|---|---|---|---|---| |VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=1.0mA,VCE=VGE,<br>Tj=25℃|4.4|4.9|6.0|V| |VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=100A,VGE=15V,<br>Tj=25℃||3.10|3.55|V| |||IC=100A,VGE=15V,<br>Tj=125℃||3.45||| ©2012 STARPOWER Semiconductor Ltd. 7/7/2012 2/9 Rev.A GD100HHU120C6S IGBT Module ## **Switching Characteristics** |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---|---| |td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=5.6Ω,VGE=±15V,<br>Tj=25℃||300||ns| |tr|Rise Time|||64||ns| |td(off)|Turn-Off DelayTime|||340||ns| |tf|Fall Time|||105||ns| |Eon|Turn-On Switching<br>Loss|||4.76||mJ| |Eoff|Turn-Off Switching<br>Loss|||4.25||mJ| |td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=5.6Ω,VGE=±15V,<br>Tj=125℃||320||ns| |tr|Rise Time|||65||ns| |td(off)|Turn-Off DelayTime|||350||ns| |tf|Fall Time|||13||ns| |Eon|Turn-On Switching<br>Loss|||7.20||mJ| |Eoff|Turn-Off Switching<br>Loss|||5.50||mJ| |Cies|Input Capacitance|VCE=30V,f=1MHz,<br>VGE=0V||8.45||nF| |Coes|OutputCapacitance|||0.76||nF| |Cres|Reverse Transfer<br>Capacitance|||0.31||nF| |ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=125℃`,`VCC=600V,<br>VCEM≤1200V||900||A| |RGint|InternalGate Resistance|||/||Ω| |LCE|StrayInductance|||21||nH| |RCC’+EE’|Module Lead<br>Resistance,<br>Terminal ToChip|||1.80||mΩ| **Electrical Characteristics of Diode** TC=25℃ unless otherwise noted |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |VF|Diode Forward<br>Voltage|IF=100A,<br>VGE=0V|Tj=25℃||1.82|2.22|V| ||||Tj=125℃||1.95||| |Qr|Recovered<br>Charge|IF=100A,<br>VR=600V,<br>RG=5.6Ω,<br>VGE=-15V|Tj=25℃||5.4||μC| ||||Tj=125℃||11.2||| |IRM|Peak Reverse<br>RecoveryCurrent||Tj=25℃||81||A| ||||Tj=125℃||101||| |Erec|Reverse Recovery<br>Energy||Tj=25℃||3.54||mJ| ||||Tj=125℃||6.57||| ©2012 STARPOWER Semiconductor Ltd. 7/7/2012 3/9 Rev.A GD100HHU120C6S IGBT Module ## **Electrical Characteristics of NTC** TC=25℃ unless otherwise noted |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---|---| |R25|Rated Resistance|||5.0||kΩ| |∆R/R|Deviation of R100|R100=493.3Ω|-5||5|%| |P25|Power Dissipation||||20.0|mW| |B25/50|B-value|R2=R25exp[B25/50(1/T2-<br>1/(298.15K))]||3375||K| ## **Thermal Characteristics** |**Symbol**|**Parameter**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---| |RθJC|Junction-to-Case(per IGBT)||0.196|K/W| |RθJC|Junction-to-Case(per Diode)||0.294|K/W| |RθCS|Case-to-Sink(Conductivegrease applied)|0.009||K/W| |Weight|Weight of Module|300||g| ©2012 STARPOWER Semiconductor Ltd. 7/7/2012 4/9 Rev.A GD100HHU120C6S IGBT Module **==> picture [514 x 657] intentionally omitted <==** **----- Start of picture text -----**<br> 200 200<br>175 VGE=15V 175 VCE=20V<br>150 150<br>25℃<br>125 125<br>100 125℃ 100 125℃<br>25℃<br>75 75<br>50 50<br>25 25<br>0 0<br>0 1 2 3 4 5 5 6 7 8 9 10 11<br>VCE [V] VGE [V]<br>Fig 1. IGBT Output Characteristic Fig 2. IGBT Transfer Characteristic<br>22 40<br>20 VCC=600V VCC=600V<br>RG=5.6Ω 35 IC=100A<br>18 VGE= ± 15V VGE= ± 15V<br>16 Tj=125℃ 30 Tj=125℃<br>14 25<br>12 EON<br>20<br>10 EON<br>8 15<br>6<br>EOFF 10<br>4<br>5 EOFF<br>2<br>0 0<br>0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60<br>IC [A] RG [Ω]<br> [A] [A]<br>C C<br>I I<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG ©2012 STARPOWER Semiconductor Ltd. 7/7/2012 5/9 Rev.A **==> picture [514 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 160 1<br>140 Module<br>IGBT<br>120<br>0.1<br>100<br>80<br>60<br>0.01<br>40<br>RG=5.6Ω<br>VGE= ± 15V<br>20 i: 1 2 3 4<br>T =125℃ ri[K/W]: 0.0117 0.0647 0.0627 0.0569<br>j τi[s]: 0.0100 0.0200 0.0500 0.1000<br>0 0.001<br>0 350 700 1050 1400 0.001 0.01 0.1 1 10<br>VCE [V] t [s]<br>Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance<br>200 10<br>9<br>175<br>8<br>150<br>7<br>125 25℃ 6 EREC<br>100 125℃ 5<br>4<br>75<br>3 VCC=600V<br>50 RG=5.6Ω<br>2 VGE=-15V<br>25 T =125℃<br>1 j<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 200<br>VF [V] IF [A]<br>Fig 7. Diode Forward Characteristic Fig 8. Diode Switching Loss vs. IF<br> [A] [K/W]<br>C<br>I<br>thJC<br>Z<br> [A]<br>F<br>I E [mJ]<br>**----- End of picture text -----**<br> ©2012 STARPOWER Semiconductor Ltd. 7/7/2012 6/9 Rev.A GD100HHU120C6S IGBT Module **==> picture [514 x 313] intentionally omitted <==** **----- Start of picture text -----**<br> 7 1<br>VCC=600V Diode<br>6.5<br>IF=100A<br>VGE=-15V<br>6 T =125℃<br>j<br>0.1<br>5.5<br>5 EREC<br>4.5<br>0.01<br>4<br>3.5 i: 1 2 3 4<br>ri[K/W]: 0.0176 0.0970 0.0941 0.0853<br>τi[s]: 0.0100 0.0200 0.0500 0.1000<br>3 0.001<br>0 10 20 30 40 50 60 0.001 0.01 0.1 1 10<br>RG [Ω] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br> Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance ©2012 STARPOWER Semiconductor Ltd. 7/7/2012 7/9 Rev.A ## **Equivalent Circuit Schematic** ## **Package Dimensions** **==> picture [419 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ©2012 STARPOWER Semiconductor Ltd. 7/7/2012 8/9 Rev.A<br>**----- End of picture text -----**<br> GD100HHU120C6S IGBT Module ## **Terms and Conditions of Usage** The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2012 STARPOWER Semiconductor Ltd. 7/7/2012 9/9 Rev.A
Updated at April 17, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →