GD100HFY120C1S

IGBT Module, Half Bridge, 155 A, 2 V, 511 W, 150 °C, Module

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Manufacturer: STARPOWER
Product type: IGBT Modules
Transistor Polarity:Dual N Channel; DC Collector Current:155A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:511W; Collector Emitter Voltage V(br)ceo:1.2kV;
SVHC: To Be Advised
Product Range: -
IGBT Technology: Trench Field Stop
IGBT Termination: Stud
Power Dissipation: 511W
IGBT Configuration: Half Bridge
Transistor Mounting: Panel
DC Collector Current: 155A
Power Dissipation Pd: 511W
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 155A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 2V
Collector Emitter Saturation Voltage Vce(on): 2V

Delivery and price
Units per pack	50
Price	32.6 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at April 1, 2026