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GD100HFX170C1S
IGBT Module, Half Bridge, 168 A, 1.85 V, 632 W, 150 °C, Module
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- Manufacturer: STARPOWER
- Product type: IGBT Modules
- SVHC: To Be Advised
- Product Range: -
- IGBT Technology: Trench Field Stop
- IGBT Termination: Stud
- Power Dissipation: 632W
- IGBT Configuration: Half Bridge
- Transistor Mounting: Panel
- DC Collector Current: 168A
- Power Dissipation Pd: 632W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 168A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 40.73 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
GD100HFX170C1S IGBT Module
## **STARPOWER**
##
## **IGBT**
## **GD100HFX170C1S**
## **1700V/100A 2 in one-package**
## **General Description**
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.
## **Features**
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175[o] C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
## **Typical Applications**
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
## **Equivalent Circuit Schematic**
©2019 STARPOWER Semiconductor Ltd. 4/15/2019 1/9 preliminary
GD100HFX170C1S IGBT Module
## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted
## **IGBT**
|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1700|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current @ TC=25~~o~~C<br>@ TC=100oC|168<br>100|A|
|ICM|PulsedCollectorCurrent tp=1ms|200|A|
|PD|Maximum Power Dissipation @ Tj=175~~o~~C|632|W|
|**Diode**||||
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|Repetitive Peak ReverseVoltage|1700|V|
|IF|Diode Continuous Forward Current|100|A|
|IFM|Diode Maximum ForwardCurrent tp=1ms|200|A|
## **Module**
|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature|175|~~o~~C|
|Tjop|Operating Junction Temperature|-40to +150|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +125|~~o~~C|
|VISO|Isolation Voltage RMS,f=50Hz,t=1min|4000|V|
©2019 STARPOWER Semiconductor Ltd. 4/15/2019 2/9 preliminary
GD100HFX170C1S IGBT Module
**IGBT Characteristics** TC=25[o] C unless otherwise noted
|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=100A,VGE=15V,<br>Tj=25oC||1.85|2.20|V|
|||IC=100A,VGE=15V,<br>Tj=125oC||2.25|||
|||IC=100A,VGE=15V,<br>Tj=150oC||2.35|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=4.0mA,VCE=VGE,<br>Tj=25oC|5.6|6.2|6.8|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||5.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||400|nA|
|RGint|InternalGate Resistance|||7.5||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,<br>VGE=0V||12.0||nF|
|Cres|Reverse Transfer<br>Capacitance|||0.29||nF|
|QG|GateCharge|VGE=-15…+15V||0.94||μC|
|td(on)|Turn-On DelayTime|VCC=900V,IC=100A,<br>RG=4.8Ω,VGE=±15V,<br>Tj=25oC||187||ns|
|tr|Rise Time|||31||ns|
|td(off)|Turn-Off DelayTime|||434||ns|
|tf|Fall Time|||363||ns|
|Eon|Turn-On Switching<br>Loss|||18.5||mJ|
|Eoff|Turn-Off Switching<br>Loss|||20.8||mJ|
|td(on)|Turn-On DelayTime|VCC=900V,IC=100A,<br>RG=4.8Ω,VGE=±15V,<br>Tj=125oC||194||ns|
|tr|Rise Time|||44||ns|
|td(off)|Turn-Off DelayTime|||503||ns|
|tf|Fall Time|||637||ns|
|Eon|Turn-On Switching<br>Loss|||30.3||mJ|
|Eoff|Turn-Off Switching<br>Loss|||32.1||mJ|
|td(on)|Turn-On DelayTime|VCC=900V,IC=100A,<br>RG=4.8Ω,VGE=±15V,<br>Tj=150oC||202||ns|
|tr|Rise Time|||55||ns|
|td(off)|Turn-Off DelayTime|||512||ns|
|tf|Fall Time|||720||ns|
|Eon|Turn-On Switching<br>Loss|||33.0||mJ|
|Eoff|Turn-Off Switching<br>Loss|||34.8||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=150oC,VCC=1000V,<br>VCEM≤1700V||400||A|
©2019 STARPOWER Semiconductor Ltd. 4/15/2019 3/9 preliminary
**Diode Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=100A,VGE=0V,Tj=25~~o~~C||1.80|2.25|V|
|||IF=100A,VGE=0V,Tj=125~~o~~C||1.90|||
|||IF=100A,VGE=0V,Tj=150~~o~~C||1.95|||
|Qr|Recovered Charge|VR=900V,IF=100A,<br>-di/dt=3550A/μs,VGE=-15V<br>Tj=25oC||17.8||μC|
|IRM|Peak Reverse<br>RecoveryCurrent|||103||A|
|Erec|Reverse Recovery<br>Energy|||9.78||mJ|
|Qr|RecoveredCharge|VR=900V,IF=100A,<br>-di/dt=3550A/μs,VGE=-15V<br>Tj=125oC||33.7||μC|
|IRM|Peak Reverse<br>Recovery Current|||107||A|
|Erec|Reverse Recovery<br>Energy|||19.4||mJ|
|Qr|RecoveredCharge|VR=900V,IF=100A,<br>-di/dt=3550A/μs,VGE=-15V<br>Tj=150oC||37.4||μC|
|IRM|Peak Reverse<br>Recovery Current|||106||A|
|Erec|Reverse Recovery<br>Energy|||23.8||mJ|
**Module Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance|||30|nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||0.65||mΩ|
|RthJC|Junction-to-Case (per IGBT)<br>Junction-to-Case(per Diode)|||0.237<br>0.397|K/W|
|RthCH|Case-to-Heatsink (per IGBT)<br>Case-to-Heatsink (per Diode)<br>Case-to-Heatsink(per Module)||0.160<br>0.268<br>0.050||K/W|
|M|Terminal Connection Torque, Screw M5<br>MountingTorque, ScrewM6|2.5<br>3.0||5.0<br>5.0|N.m|
|G|Weight of Module||150||g|
©2019 STARPOWER Semiconductor Ltd. 4/15/2019 4/9 preliminary
GD100HFX170C1S IGBT Module
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**----- Start of picture text -----**<br>
200 200<br>175 VGE=15V 175<br>VCE=20V<br>150 150<br>125 125<br>100 100<br>75 75<br>50 50<br>Tj=25℃<br>Tj=25℃<br>25 Tj=125℃ 25<br>Tj=125℃<br>Tj=150℃ Tj=150℃<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 10 11 12<br>VCE [V] VGE [V]<br>Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics<br>80 80<br>Eon Tj=125℃ Eon Tj=125℃<br>Eoff Tj=125℃ Eoff Tj=125℃<br>70 70<br>Eon Tj=150℃ Eon Tj=150℃<br>Eoff Tj=150℃ Eoff Tj=150℃<br>60 60<br>VCC=900V<br>50 RG=4.8Ω 50<br>VGE= ± 15V<br>40 40<br>30 30<br>20 20<br>VCC=900V<br>10 10 IC=100A<br>VGE= ± 15V<br>0 0<br>0 50 100 150 200 0 5 10 15 20 25 30 35 40 45 50<br>IC [A] RG [Ω]<br> [A] [A]<br>C C<br>I I<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG ©2019 STARPOWER Semiconductor Ltd. 4/15/2019 5/9 preliminary
GD100HFX170C1S IGBT Module
**==> picture [513 x 680] intentionally omitted <==**
**----- Start of picture text -----**<br>
250 1<br>IGBT<br>Module<br>200<br>0.1<br>150<br>100<br>0.01<br>50 RG=4.8Ω i: 1 2 3 4<br>VGE= ± 15V rτii[K/W]: 0.0135 0.0786 0.0760 0.0689 [s]: 0.01 0.02 0.05 0.1<br>T =150 [o] C<br>j<br>0 0.001<br>0 300 600 900 1200 1500 1800 0.001 0.01 0.1 1 10<br>VCE [V] t [s]<br>Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance<br>200 40<br>Tj=25℃ Erec Tj=125℃<br>Tj=125℃<br>175 35 Erec Tj=150℃<br>Tj=150℃<br>150 30<br>125 25<br>100 20<br>75 15<br>50 10 VCC=900V<br>RG=4.8Ω<br>25 5 VGE=-15V<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200<br>VF [V] IF [A]<br>Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. IF<br> [A] [K/W]<br>C<br>I<br>thJC<br>Z<br> [A]<br>F<br>I E [mJ]<br>**----- End of picture text -----**<br>
©2019 STARPOWER Semiconductor Ltd. 4/15/2019 6/9 preliminary
GD100HFX170C1S IGBT Module
**==> picture [513 x 314] intentionally omitted <==**
**----- Start of picture text -----**<br>
40 1<br>Erec Tj=125℃<br>Diode<br>Erec Tj=150℃<br>30<br>0.1<br>20<br>0.01<br>10<br>VCC=900V ri: 1 2 3 4 i[K/W]: 0.0236 0.1309 0.1272 0.1153<br>IF=100A τi[s]: 0.01 0.02 0.05 0.1<br>VGE=-15V<br>0 0.001<br>0 10 20 30 40 50 0.001 0.01 0.1 1 10<br>RG [Ω] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>
Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance
©2019 STARPOWER Semiconductor Ltd. 4/15/2019 7/9 preliminary
GD100HFX170C1S IGBT Module
## **Circuit Schematic**
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6<br>7<br>1 2 3<br>5<br>4<br>**----- End of picture text -----**<br>
## **Package Dimensions**
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Dimensions in Millimeters<br>**----- End of picture text -----**<br>
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©2019 STARPOWER Semiconductor Ltd. 4/15/2019 8/9 preliminary
GD100HFX170C1S IGBT Module
## **Terms and Conditions of Usage**
The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
©2019 STARPOWER Semiconductor Ltd. 4/15/2019 9/9 preliminary
Updated at April 17, 2026
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