GD100HFU120C8S

IGBT Module, Half Bridge, 154 A, 2.9 V, 791 W, 125 °C, Module

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: STARPOWER
Product type: IGBT Modules
Available until stocks are exhausted Alternative available
SVHC: To Be Advised
Product Range: -
IGBT Technology: NPT IGBT [Standard]
IGBT Termination: Stud
Power Dissipation: 791W
IGBT Configuration: Half Bridge
Transistor Mounting: Panel
DC Collector Current: 154A
Power Dissipation Pd: 791W
Transistor Case Style: Module
Operating Temperature Max: 125°C
Junction Temperature Tj Max: 125°C
Continuous Collector Current: 154A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 2.9V
Collector Emitter Saturation Voltage Vce(on): 2.9V

Delivery and price
Units per pack	1
Price	31.96 €
Current stock	10+
Lead time	30 days

Datasheet

GD100HFU120C8S                                                               IGBT Module 

## **STARPOWER** 

**IGBT** 

**SEMICONDUCTOR** 

## **GD100HFU120C8S** 

**1200V/100A 2 in one-package** 

## **General Description** 

STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. 

## **Features** 

- NPT IGBT technology 

- 10μs short circuit capability 

- Low switching losses 

- Rugged with ultrafast performance 

- VCE(sat) with positive temperature coefficient 

- Fast & soft reverse recovery anti-parallel FWD 

- Isolated copper baseplate using DBC technology 

## **Typical Applications** 

- Switching mode power supply 

- Inductive heating 

- Electronic welder 

## **Equivalent Circuit Schematic** 

©2015 STARPOWER Semiconductor Ltd.             3/8/2015             1/9              DX01 

GD100HFU120C8S                                                               IGBT Module 

## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted 

## **IGBT** 

|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current  @ TC=25~~o~~C<br>@ TC=80oC|154<br>100|A|
|ICM|PulsedCollectorCurrent  tp=1ms|200|A|
|PD|Maximum Power Dissipation  @ Tj=175~~o~~C|791|W|



## **Diode** 

|**Diode**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|Repetitive Peak ReverseVoltage|1200|V|
|IF|Diode Continuous Forward Current|100|A|
|IFM|Diode Maximum ForwardCurrent  tp=1ms|200|A|



## **Module** 

|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature|150|~~o~~C|
|Tjop|Operating Junction Temperature|-40to +125|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +125|~~o~~C|
|VISO|Isolation Voltage  RMS,f=50Hz,t=1min|4000|V|



©2015 STARPOWER Semiconductor Ltd.             3/8/2015             2/9              DX01 

**IGBT Characteristics** TC=25[o] C unless otherwise noted 

|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=100A,VGE=15V,<br>Tj=25oC||2.90|3.35|V|
|||IC=100A,VGE=15V,<br>Tj=125oC||3.60|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=2.0mA,VCE=VGE,<br>Tj=25oC|4.5|5.5|6.5|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||5.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||400|nA|
|RGint|InternalGate Resistance|||1.25||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,<br>VGE=0V||6.52||nF|
|Cres|Reverse Transfer<br>Capacitance|||0.41||nF|
|QG|GateCharge|VGE=-15…+15V||1.12||μC|
|td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=9.1Ω,VGE=±15V,<br>Tj=25oC||265||ns|
|tr|Rise Time|||66||ns|
|td(off)|Turn-Off DelayTime|||357||ns|
|tf|Fall Time|||124||ns|
|Eon|Turn-On Switching<br>Loss|||4.15||mJ|
|Eoff|Turn-Off Switching<br>Loss|||3.10||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=9.1Ω,VGE=±15V,<br>Tj=125oC||270||ns|
|tr|Rise Time|||67||ns|
|td(off)|Turn-Off DelayTime|||368||ns|
|tf|Fall Time|||155||ns|
|Eon|Turn-On Switching<br>Loss|||5.86||mJ|
|Eoff|Turn-Off Switching<br>Loss|||4.45||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=125oC,VCC=900V,<br>VCEM≤1200V||800||A|



©2015 STARPOWER Semiconductor Ltd.             3/8/2015             3/9              DX01 

**Diode Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=100A,VGE=0V,Tj=25~~o~~C||1.95|2.40|V|
|||IF=100A,VGE=0V,Tj=125~~o~~C||2.00|||
|Qr|RecoveredCharge|VR=600V,IF=100A,<br>-di/dt=1550A/μs,VGE=-15V<br>Tj=25oC||6.83||μC|
|IRM|Peak Reverse<br>Recovery Current|||88.3||A|
|Erec|Reverse Recovery<br>Energy|||2.62||mJ|
|Qr|Recovered Charge|VR=600V,IF=100A,<br>-di/dt=1550A/μs,VGE=-15V<br>Tj=125oC||12.7||μC|
|IRM|Peak Reverse<br>RecoveryCurrent|||134||A|
|Erec|Reverse Recovery<br>Energy|||5.09||mJ|



**Module Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance|||26|nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||0.62||mΩ|
|RthJC|Junction-to-Case (per IGBT)<br>Junction-to-Case(per Diode)|||0.158<br>0.271|K/W|
|RthCH|Case-to-Heatsink (per IGBT)<br>Case-to-Heatsink (per Diode)<br>Case-to-Heatsink(per Module)||0.146<br>0.250<br>0.046||K/W|
|M|Terminal Connection Torque, Screw M5<br>MountingTorque, ScrewM6|2.5<br>3.0||5.0<br>5.0|N.m|
|G|Weight of Module||200||g|



©2015 STARPOWER Semiconductor Ltd.             3/8/2015             4/9              DX01 

**==> picture [513 x 712] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 200<br>180 VGE=15V  180 VCE=20V<br>160 160<br>140 140<br>25 [o] C<br>120 120<br>125 [o] C<br>100 125 [o] C  100<br>80 80 25 [o] C<br>60 60<br>40 40<br>20 20<br>0 0<br>0 1 2 3 4 5 6 6 7 8 9 10 11<br>VCE  [V]  VGE [V]<br>Fig 1. IGBT Output Characteristics                          Fig 2. IGBT Transfer Characteristics<br>16 50<br>VCC=600V  45 VCC=600V<br>14 RG=9.1Ω  IC=100A<br>VGE= ± 15V  40 VGE= ± 15V<br>12 Tj=125 [o] C  Tj=125 [o] C<br>35<br>10 Eon<br>30<br>8 25<br>Eon<br>6 Eoff  20<br>15<br>4<br>10<br>Eoff<br>2<br>5<br>0 0<br>0 25 50 75 100 125 150 175 200 0 13 26 39 52 65 78 91<br>IC [A]  RG [Ω]<br>Fig 3. IGBT Switching Loss vs. IC                              Fig 4. IGBT Switching Loss vs. RG<br>©2015 STARPOWER Semiconductor Ltd.             3/8/2015             5/9              DX01<br> [A]   [A]<br>C C<br>I I<br>E [mJ]  E [mJ]<br>**----- End of picture text -----**<br>


GD100HFU120C8S                                                               IGBT Module 

**==> picture [513 x 680] intentionally omitted <==**

**----- Start of picture text -----**<br>
250 1<br>Module<br>200 IGBT<br>0.1<br>150<br>100<br>0.01<br>RG=9.1Ω<br>50 VGE= ± 15V<br>i:                1            2            3            4<br>Tj=125 [o] C  rτii[K/W]:   0.0096   0.0520   0.0505   0.0459 [s]:          0.01       0.02       0.05       0.1<br>0 0.001<br>0 350 700 1050 1400 0.001 0.01 0.1 1 10<br>VCE [V]  t [s]<br>Fig 5. RBSOA                                       Fig 6. IGBT Transient Thermal Impedance<br>200 8<br>180<br>7<br>160<br>6<br>140 Erec<br>5<br>120<br>100 4<br>80<br>125 [o] C  3<br>60 VCC=600V<br>2 RG=9.1Ω<br>40 25 [o] C  VGE=-15V<br>1 Tj=125 [o] C<br>20<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 200<br>VF  [V]  IF [A]<br>Fig 7. Diode Forward Characteristics    Fig 8. Diode Switching Loss vs. IF<br> [A]   [K/W]<br>C<br>I<br>thJC<br>Z<br> [A]<br>F<br>I E [mJ]<br>**----- End of picture text -----**<br>


©2015 STARPOWER Semiconductor Ltd.             3/8/2015             6/9              DX01 

GD100HFU120C8S                                                               IGBT Module 

**==> picture [513 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
6 1<br>Diode<br>5<br>4 0.1<br>Erec<br>3<br>2 0.01<br>VCC=600V<br>IF=100A<br>1 VGE=-15V  i:                1            2            3            4<br>Tj=125 [o] C  rτii[K/W]:   0.0163   0.0894   0.0866   0.0787 [s]:          0.01       0.02       0.05       0.1<br>0 0.001<br>0 13 26 39 52 65 78 91 0.001 0.01 0.1 1 10<br>RG [Ω]  t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig 9. Diode Switching Loss vs. RG                      Fig 10. Diode Transient Thermal Impedance 

©2015 STARPOWER Semiconductor Ltd.             3/8/2015             7/9              DX01 

GD100HFU120C8S                                                               IGBT Module 

## **Circuit Schematic** 

## **Package Dimensions** 

Dimensions in Millimeters 

©2015 STARPOWER Semiconductor Ltd.             3/8/2015             8/9              DX01 

GD100HFU120C8S                                                               IGBT Module 

## **Terms and Conditions of Usage** 

The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. 

If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 

©2015 STARPOWER Semiconductor Ltd.             3/8/2015             9/9              DX01

Updated at April 17, 2026

About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.

Learn more →

Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.

Request a quote →

Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

BOM Analysis service →