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GD100HFU120C8S

IGBT Module, Half Bridge, 154 A, 2.9 V, 791 W, 125 °C, Module

  • Manufacturer: STARPOWER
  • Product type: IGBT Modules
  • Product variants: No other variants available. No other names.
  • IGBT Technology: NPT IGBT [Standard]
  • IGBT Termination: Stud
  • Power Dissipation: 791W
  • IGBT Configuration: Half Bridge
  • Transistor Mounting: Panel
  • DC Collector Current: 154A
  • Power Dissipation Pd: 791W
  • Transistor Case Style: Module
  • Operating Temperature Max: 125°C
  • Junction Temperature Tj Max: 125°C
  • Continuous Collector Current: 154A
  • Collector Emitter Voltage Max: 1.2kV
  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Saturation Voltage: 2.9V
  • Collector Emitter Saturation Voltage Vce(on): 2.9V
Delivery and price
Units per pack 50
Price 49.14 €
Current stock 44
Lead time 7 days
PDF File icon Datasheet