GD100HFU120C2S

**GD100HFU120C2S                                        IGBT Module** 

## **STARPOWER** 

## SEMICONDUCTOR[TM] **IGBT** 

## **GD100HFU120C2S** 

## **Molding Type Module** 

**1200V/100A 2 in one-package** 

## **General Description** 

STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. 

## **Features** 

- NPT IGBT technology 

- 10μs short circuit capability 

- Low switching losses 

- Rugged with ultrafast performance 

- VCE(sat) with positive temperature coefficient 

- Low inductance case 

- Fast & soft reverse recovery anti-parallel FWD 

- Isolated copper baseplate using DBC technology         Equivalent Circuit Schematic 

## **Typical Applications** 

- Switching mode power supplies 

- Inductive heating 

- Electronic welder 

©2011 STARPOWER Semiconductor Ltd.         2/25/2011         1/9           Rev.B 

**GD100HFU120C2S                                        IGBT Module** 

**Absolute Maximum Ratings** TC=25℃ unless otherwise noted 

|**Absolute**|**Maximum Ratings**TC=25℃unless oth|erwise noted||
|---|---|---|---|
|**Symbol**|**Description**|**GD100HFU120C2S**|**Units**|
|VCES|Collector-Emitter Voltage|1200|V|
|VGES|Gate-Emitter Voltage|`±`20|V|
|IC|Collector Current  @ TC=25℃<br>@ TC=80℃|200<br>100|A|
|ICM(1)|Pulsed Collector Current  tp=1ms|200|A|
|IF|Diode Continuous Forward Current|100|A|
|IFM(1)|Diode Maximum Forward Current|200|A|
|PD|Maximumpower Dissipation  @ Tj=150℃|1136|W|
|TSC|Short Circuit Withstand Time  @ Tj=125℃|10|μs|
|Tj|Maximum Junction Temperature|150|℃|
|TSTG|Storage Temperature Range|-40 to +125|℃|
|VISO|Isolation Voltage  RMS,f=50Hz,t=1min|2500|V|
|Mounting<br>Torque|Power Terminal Screw:M6|2.5 to 5.0|N.m|
||MountingScrew:M6|3.0 to 6.0|N.m|
|**Notes:**||||



(1) Repetitive rating: Pulse width limited by max. junction temperature 

## **Electrical Characteristics of IGBT** TC=25℃ unless otherwise noted 

## **Off Characteristics** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-Emitter<br>Breakdown Voltage|Tj=25℃|1200|||V|
|ICES|Collector Cut-Off Current|VCE=VCES,VGE=0V,<br>Tj=25℃|||5.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25℃|||400|nA|



## **On Characteristics** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=1.0mA,VCE=VGE,<br>Tj=25℃|4.4|4.9|6.0|V|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=100A,VGE=15V,<br>Tj=25℃||3.10|3.60|V|
|||IC=100A,VGE=15V,<br>Tj=125℃||3.45|||



©2011 STARPOWER Semiconductor Ltd.         2/25/2011         2/9           Rev.B 

## **Switching Characteristics** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=5.6Ω,VGE=`±`15V,<br>L=200nH,Tj=25℃||300||ns|
|tr|Rise Time|||64||ns|
|td(off)|Turn-Off DelayTime|||340||ns|
|tf|Fall Time|||105||ns|
|Eon|Turn-On Switching<br>Loss|||4.76||mJ|
|Eoff|Turn-Off Switching<br>Loss|||4.25||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=5.6Ω,VGE=`±`15V,<br>L=200nH,Tj=125℃||320||ns|
|tr|Rise Time|||65||ns|
|td(off)|Turn-Off DelayTime|||350||ns|
|tf|Fall Time|||132||ns|
|Eon|Turn-On Switching<br>Loss|||7.20||mJ|
|Eoff|Turn-Off Switching<br>Loss|||5.50||mJ|
|Cies|Input Capacitance|VCE=30V,f=1MHz,<br>VGE=0V||8.45||nF|
|Coes|Output Capacitance|||0.76||nF|
|Cres|Reverse Transfer<br>Capacitance|||0.31||nF|
|ISC|SC Data|TP≤10μs,VGE=15V,<br>Tj=25℃,VCC=600V,<br>VCEM≤1200V||900||A|
|RGint|Internal Gate Resistance|||2.4||Ω|
|LCE|StrayInductance||||18|nH|
|RCC’+EE’|Module Lead Resistance,<br>Terminal To Chip|TC=25℃||0.32||mΩ|



## **Electrical Characteristics of DIODE** TC=25℃ unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=100A|Tj=25℃||1.82|2.22|V|
||||Tj=125℃||1.95|||
|Qr|Recovered Charge|IF=100A,<br>VR=600V,<br>di/dt=-1900A/μs,<br>VGE=-15V|Tj=25℃||5.4||μC|
||||Tj=125℃||11.2|||
|IRM|Peak Reverse<br>RecoveryCurrent||Tj=25℃||81||A|
||||Tj=125℃||101|||
|Erec|Reverse Recovery<br>Energy||Tj=25℃||3.54||mJ|
||||Tj=125℃||6.57|||



©2011 STARPOWER Semiconductor Ltd.         2/25/2011         3/9           Rev.B 

**GD100HFU120C2S                                        IGBT Module** 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case (per IGBT)||0.141|K/W|
|RθJC|Junction-to-Case (per DIODE)||0.225|K/W|
|RθCS|Case-to-Sink (Conductive grease applied)|0.035||K/W|
|G|Weight of Module|300||g|



©2011 STARPOWER Semiconductor Ltd.         2/25/2011         4/9           Rev.B 

**Fig 1. IGBT Typical Output Characteristics  Fig 2. IGBT Typical Transfer Characteristics** 

**Fig 3. IGBT Switching Loss vs. IC           Fig 4. IGBT Switching Loss vs. RG** 

©2011 STARPOWER Semiconductor Ltd.         2/25/2011         5/9           Rev.B 

**Fig 5. RBSOA              Fig 6. IGBT Transient Thermal Impedance** 

**Fig 7. Diode Typical Forward Characteristics       Fig 8. Diode Switching Loss vs. IF** 

©2011 STARPOWER Semiconductor Ltd.         2/25/2011         6/9           Rev.B 

**GD100HFU120C2S                                        IGBT Module** 

**Fig 9. Diode Switching Loss vs. RG     Fig 10. Diode Transient Thermal Impedance** 

©2011 STARPOWER Semiconductor Ltd.         2/25/2011         7/9           Rev.B 

## **Package Dimension** 

## **Dimensions in Millimeters** 

©2011 STARPOWER Semiconductor Ltd.         2/25/2011         8/9           Rev.B 

**GD100HFU120C2S                                        IGBT Module** 

## **Terms and Conditions of Usage** 

The data contained in this product datasheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. 

If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 

©2011 STARPOWER Semiconductor Ltd.         2/25/2011         9/9           Rev.B