GD100HFU120C2S

IGBT Module, Half Bridge, 200 A, 3.1 V, 1.136 kW, 150 °C, Module

⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.

Manufacturer: STARPOWER
Product type: IGBT Modules
Available until stocks are exhausted Alternative available
SVHC: To Be Advised
Product Range: -
IGBT Technology: NPT IGBT [Standard]
IGBT Termination: Stud
Power Dissipation: 1.136kW
IGBT Configuration: Half Bridge
Transistor Mounting: Panel
DC Collector Current: 200A
Power Dissipation Pd: 1.136kW
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 200A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 3.1V
Collector Emitter Saturation Voltage Vce(on): 3.1V

Delivery and price
Units per pack	50
Price	46.53 €
Current stock	50+
Lead time	30 days

Datasheet

Updated at April 1, 2026