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GD100FFY120C5S
IGBT Module, Three Phase Full Bridge, 157 A, 1.7 V, 512 W, 150 °C, Module
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- Manufacturer: STARPOWER
- Product type: IGBT Modules
- SVHC: To Be Advised
- Product Range: -
- IGBT Technology: Trench Field Stop
- IGBT Termination: Press Fit
- Power Dissipation: 512W
- IGBT Configuration: Three Phase Full Bridge
- Transistor Mounting: Panel
- DC Collector Current: 157A
- Power Dissipation Pd: 512W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 157A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 65.07 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
GD100FFY120C5S IGBT Module ## **STARPOWER** ## **SEMICONDUCTOR IGBT** ## **GD100FFY120C5S** **1200V/100A 6 in one-package** ## **General Description** STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. ## **Features** - Low VCE(sat) Trench IGBT technology - 10μs short circuit capability - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175[o] C - Low inductance case - Fast & soft reverse recovery anti-parallel FWD - Isolated copper baseplate using DBC technology ## **Typical Applications** - Inverter for motor drive - AC and DC servo drive amplifier - Uninterruptible power supply ## **Equivalent Circuit Schematic** ©2016 STARPOWER Semiconductor Ltd. 4/30/2016 1/9 SN0B GD100FFY120C5S IGBT Module ## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted ## **IGBT** |**IGBT**|||| |---|---|---|---| |**Symbol**|**Description**|**Value**|**Unit**| |VCES|Collector-EmitterVoltage|1200|V| |VGES|Gate-Emitter Voltage|±20|V| |IC|Collector Current @ TC=25~~o~~C<br>@ TC=100oC|157<br>100|A| |ICM|PulsedCollectorCurrent tp=1ms|200|A| |PD|Maximum Power Dissipation @ Tj=175~~o~~C|512|W| |**Diode**|||| |**Symbol**|**Description**|**Value**|**Unit**| |VRRM|Repetitive Peak ReverseVoltage|1200|V| |IF|Diode Continuous Forward Current|100|A| |IFM|Diode Maximum ForwardCurrent tp=1ms|200|A| ## **Module** |**Module**|||| |---|---|---|---| |**Symbol**|**Description**|**Value**|**Unit**| |Tjmax|Maximum Junction Temperature|175|~~o~~C| |Tjop|Operating Junction Temperature|-40to +150|~~o~~C| |TSTG|Storage Temperature Range|-40 to +125|~~o~~C| |VISO|Isolation Voltage RMS,f=50Hz,t=1min|4000|V| ©2016 STARPOWER Semiconductor Ltd. 4/30/2016 2/9 SN0B **IGBT Characteristics** TC=25[o] C unless otherwise noted |**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted|||| |---|---|---|---|---|---|---| |**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=100A,VGE=15V,<br>Tj=25oC||1.70|2.15|V| |||IC=100A,VGE=15V,<br>Tj=125oC||1.95||| |||IC=100A,VGE=15V,<br>Tj=150oC||2.00||| |VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=2.5mA,VCE=VGE,<br>Tj=25oC|5.2|6.0|6.8|V| |ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||1.0|mA| |IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||100|nA| |RGint|InternalGate Resistance|||7.5||Ω| |td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=1.6Ω,VGE=±15V,<br>Tj=25oC||170||ns| |tr|Rise Time|||32||ns| |td(off)|Turn-Off DelayTime|||360||ns| |tf|Fall Time|||86||ns| |Eon|Turn-On Switching<br>Loss|||5.90||mJ| |Eoff|Turn-Off Switching<br>Loss|||6.05||mJ| |td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=1.6Ω,VGE=±15V,<br>Tj=125oC||180||ns| |tr|Rise Time|||42||ns| |td(off)|Turn-Off DelayTime|||470||ns| |tf|Fall Time|||165||ns| |Eon|Turn-On Switching<br>Loss|||9.10||mJ| |Eoff|Turn-Off Switching<br>Loss|||9.35||mJ| |td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=1.6Ω,VGE=±15V,<br>Tj=150oC||181||ns| |tr|Rise Time|||43||ns| |td(off)|Turn-Off DelayTime|||480||ns| |tf|Fall Time|||186||ns| |Eon|Turn-On Switching<br>Loss|||10.0||mJ| |Eoff|Turn-Off Switching<br>Loss|||10.5||mJ| |ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=150oC,VCC=900V,<br>VCEM≤1200V||400||A| ©2016 STARPOWER Semiconductor Ltd. 4/30/2016 3/9 SN0B **Diode Characteristics** TC=25[o] C unless otherwise noted |**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |VF|Diode Forward<br>Voltage|IF=100A,VGE=0V,Tj=25~~o~~C||1.70|2.15|V| |||IF=100A,VGE=0V,Tj=125~~o~~C||1.65||| |||IF=100A,VGE=0V,Tj=150~~o~~C||1.65||| |Qr|Recovered Charge|VR=600V,IF=100A,<br>-di/dt=2800A/μs,VGE=-15V<br>Tj=25oC||9.0||μC| |IRM|Peak Reverse<br>RecoveryCurrent|||110||A| |Erec|Reverse Recovery<br>Energy|||3.32||mJ| |Qr|RecoveredCharge|VR=600V,IF=100A,<br>-di/dt=2800A/μs,VGE=-15V<br>Tj=125oC||16.2||μC| |IRM|Peak Reverse<br>Recovery Current|||120||A| |Erec|Reverse Recovery<br>Energy|||5.70||mJ| |Qr|RecoveredCharge|VR=600V,IF=100A,<br>-di/dt=2800A/μs,VGE=-15V<br>Tj=150oC||19.5||μC| |IRM|Peak Reverse<br>Recovery Current|||123||A| |Erec|Reverse Recovery<br>Energy|||7.13||mJ| **NTC Characteristics** TC=25[o] C unless otherwise noted |**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |R25|Rated Resistance|||5.0||kΩ| |∆R/R|Deviation of R100|TC=100~~o~~C,R100=493.3Ω|-5||5|%| |P25|Power Dissipation||||20.0|mW| |B25/50|B-value|R2=R25exp[B25/50(1/T2-<br>1/(298.15K))]||3375||K| |B25/80|B-value|R2=R25exp[B25/80(1/T2-<br>1/(298.15K))]||3411||K| |B25/100|B-value|R2=R25exp[B25/100(1/T2-<br>1/(298.15K))]||3433||K| **Module Characteristics** TC=25[o] C unless otherwise noted |**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---| |LCE|StrayInductance||19||nH| |RCC’+EE’|Module Lead Resistance,Terminal toChip||1.80||mΩ| |RthJC|Junction-to-Case (per IGBT)<br>Junction-to-Case(per Diode)|||0.293<br>0.505|K/W| |RthCH|Case-to-Heatsink (per IGBT)<br>Case-to-Heatsink (per Diode)<br>Case-to-Heatsink(per Module)||0.190<br>0.327<br>0.020||K/W| |M|MountingTorque, ScrewM5|3.0||6.0|N.m| |G|Weight of Module||200||g| ©2016 STARPOWER Semiconductor Ltd. 4/30/2016 4/9 SN0B **==> picture [513 x 712] intentionally omitted <==** **----- Start of picture text -----**<br> 200 200<br>175 VGE=15V 175<br>VCE=20V<br>150 150<br>125 125<br>100 100<br>75 75<br>50 50<br>Tj=25℃ Tj=25℃<br>25 Tj=125℃ 25 Tj=125℃<br>Tj=150℃ Tj=150℃<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13<br>VCE [V] VGE [V]<br>Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics<br>35 25<br>Eon Tj=125℃ Eon Tj=125℃<br>Eoff Tj=125℃ Eoff Tj=125℃<br>30<br>Eon Tj=150℃ Eon Tj=150℃<br>20<br>Eoff Tj=150℃ Eoff Tj=150℃<br>25<br>VCC=600V<br>20 RG=1.6Ω 15<br>VGE= ± 15V<br>15<br>10<br>10<br>5 VCC=600V<br>5 IC=100A<br>VGE= ± 15V<br>0 0<br>0 25 50 75 100 125 150 175 200 0 4 8 12 16<br>IC [A] RG [Ω]<br>Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG<br>©2016 STARPOWER Semiconductor Ltd. 4/30/2016 5/9 SN0B<br> [A] [A]<br>C C<br>I I<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> GD100FFY120C5S IGBT Module **==> picture [513 x 680] intentionally omitted <==** **----- Start of picture text -----**<br> 220 1<br>200<br>Module<br>180<br>IGBT<br>160<br>140<br>120<br>0.1<br>100<br>80<br>60<br>40 RG=1.6Ω i: 1 2 3 4<br>VGE= ± 15V rτii[K/W]: 0.0176 0.0967 0.0937 0.0850 [s]: 0.01 0.02 0.05 0.1<br>20 Tj=150 [o] C<br>0 0.01<br>0 350 700 1050 1400 0.001 0.01 0.1 1 10<br>VCE [V] t [s]<br>Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance<br>200 9<br>Tj=25℃ Erec Tj=125℃<br>Tj=125℃ 8<br>175 Erec Tj=150℃<br>Tj=150℃<br>7<br>150<br>6<br>125<br>5<br>100<br>4<br>75<br>3<br>50 2 VCC=600V<br>RG=1.6Ω<br>25 VGE=-15V<br>1<br>0 0<br>0 0.5 1 1.5 2 2.5 0 25 50 75 100 125 150 175 200<br>VF [V] IF [A]<br>Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. IF<br> [A] [K/W]<br>C<br>I<br>thJC<br>Z<br> [A]<br>F<br>I E [mJ]<br>**----- End of picture text -----**<br> ©2016 STARPOWER Semiconductor Ltd. 4/30/2016 6/9 SN0B GD100FFY120C5S IGBT Module **==> picture [513 x 314] intentionally omitted <==** **----- Start of picture text -----**<br> 8 1<br>Erec Tj=125℃ Diode<br>7 Erec Tj=150℃<br>6<br>5<br>0.1<br>4<br>3<br>VCC=600V i: 1 2 3 4<br>2 IF=100A rτii[K/W]: 0.0303 0.1667 0.1616 0.1464 [s]: 0.01 0.02 0.05 0.1<br>VGE=-15V<br>1 0.01<br>0 4 8 12 16 0.001 0.01 0.1 1 10<br>RG [Ω] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br> Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance **==> picture [257 x 337] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0 30 60 90 120 150<br>TC [ [o] C]<br>Fig 11. NTC Temperature Characteristic<br>R [kΩ]<br>**----- End of picture text -----**<br> ©2016 STARPOWER Semiconductor Ltd. 4/30/2016 7/9 SN0B GD100FFY120C5S IGBT Module ## **Circuit Schematic** **==> picture [420 x 33] intentionally omitted <==** **----- Start of picture text -----**<br> Package Dimensions<br> Dimensions in Millimeters<br>**----- End of picture text -----**<br> **==> picture [418 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ©2016 STARPOWER Semiconductor Ltd. 4/30/2016 8/9 SN0B<br>**----- End of picture text -----**<br> GD100FFY120C5S IGBT Module ## **Terms and Conditions of Usage** The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2016 STARPOWER Semiconductor Ltd. 4/30/2016 9/9 SN0B
Updated at April 17, 2026
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